• 세라미스트
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• 제3권1호
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• pp.45-52
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• 2000

전자싸이클로트론공명플라즈마 화학기상증착법(ECR-PECVD)에 의한 Pt 및 $RuO_2$ 기판에서의 PZT 박막의 증착특성 및 전기적 특성을 조사하였다. $RuO_2$ 기판에서는 Pt 기판에 비하여 Pb-관련 이차상이 형성되기 쉬웠고, PZT 페로브스카이트 핵생성이 어려웠다. 하지만, $RuO_2$ 기판에서도 금속유기 원료기체의 정확한 유량조절(특히, $Pb(DPM)_2$ 유량)과 Ti-oxide 씨앗층의 도입을 통하여 $450^{\circ}C$의 비교적 낮은 증착온도에서 단일한페로브스카이트 박막 제조가 가능하였으며, $RuO_2$ 기판에서도 미세구조가 향상된 PZT 박막의 경우 $10^{-6}A/cm^2@100kV/cm$의 우수한 누설전류 특성을 나타내었다. 4 가지 전극배열의 PZT 커패시터들 중에서 $RuO_2//RuO_2$ 커패시터는 누설전류밀도가 $10^{-4}A/cm^2@100kV/cm$ 정도로 높았지만, 피로현상은 나타나지 않았다. 일방향 전계 (unipolar) 피로특성에서 나타난 polarization-shift 현상과 양방향 전계 (bipolar) 피로특성의 온도의존성 결과는 PZT 박막내 charged defect의 이동이 어려움을 나타내었다. Bipolar 신호에 의한 피로현상은 인가전계에 의한 분극반전 과정에서 Pt 계면에서 charged defect의 형성과 관련이 있는 것으로 판단되었다. 또한, 상하부 전극물질 이 다른 경우에는 상하부 계면의 charged defect 밀도에 차이가 생겨 내부전계가 형성되는 것으로 판단되었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.296-299
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• 2003

In this paper, $0.10Pb(Sb_{1/2}Sn_{1/2})O_3-0.25PbTiO_3-0.65PbZrO_3$ ceramics were fabricated by the mixed-oxide method. The sintering temperature and time were $1230^{\circ}C$ and 2[hr], respectively. The structural, dielectric and piezoelectric properties with addition of NiO were studied. The crystal structure of a specimen was rhombohedral. As a result of SEM, the average grain size were decreased with increasing the contents of NiO. But the grains of the specimens doped with 0.4wt% NiO were increased, due to deposits of excess NiO at grain boundaries in the liquid phase. Relative dielectric constant and dielectric loss of the specimen doped with 0.1wt% NiO were 701 and 0.026, respectively.

• Journal of Korean Society for Atmospheric Environment
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• 제16권E호
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• pp.19-27
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• 2000

Particle Induced X-ray Emission (PIXE) and Elemental Analysis Syztem (EAS) were applied to the investiga-tion of the Characteristics and sources of wintertime atmospheric aerosols in Seoul. Atmospheric aerosols were collected by both fine and coarse fractions using a two-stage filter pack sampler from Kon-Kuk university during the winter season of 1999. PIXE was applied to the analysis of the middle and heavy elements with atomic numbers greater than 14(Si) and EAS was applied to the measurement of the light elements such as H, C and N. The fact that 64.2% of mass of fine particles in Seoul consists of the light elements (N, C , and H) suggests that the measurement of light elements is extremely important. The average mass concentration is Seoul was 38.6$\mu\textrm{g}$m(sup)-3. Elements such as Ca, Fe, Mg, and Ti appeared to have very low Fine/Coarse ratios(0.1∼0.4), whereas che-mical components related to anthropogenic sources such as Br, V, Pb, and Zn were observed to accumulate in the fine fraction. In the Asian Dust Storm(ADS) event, the concentation of soil components increased dramatically. Reconstruction of the fine mass concentrations estimated by a newly revised simple model was fairly in good agreement with the measured ones. Source identification was attempted using the enrichment factor and Pearsons coefficient of correlation. The typical elements derived from each source could be classified by this method.

• 센서학회지
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• 제16권2호
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• pp.120-125
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• 2007

The effect of $MnO_{2}$ as a sintering additive on the microstructures and the piezoelectric properties, especially mechanical quality factor, of 0.05 Pb$(Sb_{0.5}Nb_{0.5})O_{3}$-0.95 Pb$(Zr_{0.52}Ti_{0.48})O_{3}$ (PSN-PZT) piezoelectric ceramics was investigated. The samples were sintered at $1250^{\circ}C$ for 2 h. The crystal structure and surface morphology of the sample were examined using XRD and FE-SEM, respectively. A study on the influence of $MnO_{2}$ additives on the dielectric and piezoelectric properties showed that the $MnO_{2}$-added PSN-PZT system exhibited a high mechanical quality factor and well-situated piezoelectric properties. The optimized results of $d_{33}$ (319 pC/N), $k_{p}$ (55 %), and $Q_{m}$ (751.24) were obtained at 0.2 wt% $MnO_{2}$ added PSN-PZT piezoelectrics.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.177-180
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• 2002

Thickness dependence of crystallographic orientation of diol based sol-gel derived PZT(52/48) films on dielectric and piezoelectric properties was investigated The thickness of each layer by one time spinning was about 0.2 $\mu\textrm{m}$, and crack-free films was successfully deposited on 4 inches Pt/Ti/SiO$_2$/Si substrates by 0.5 mol solutions in the range from 0.2 $\mu\textrm{m}$ to 3.8 $\mu\textrm{m}$. Excellent P-E hysteresis curves were achieved without pores or any defects between interlayers. As the thickness increased , the (111) preferred orientation disappeared from 1$\mu\textrm{m}$ to 3 $\mu\textrm{m}$ region, and the orientation of films became random above 3 $\mu\textrm{m}$. Dielectric constants and longitudinal piezoelectric coefficient d$\_$33/, measured by pneumatic method were saturated around the value of about 1400 and 300 pC/N respectively above the thickness of 0.8 7m. A micromachined piezoelectric cantilever have been fabricated using 0.8 $\mu\textrm{m}$ thickness PZT (52/48) films. PZT films were prepared on Si/SiN$\_$x/SiO$_2$/Ta/Pt substrate and fabricated unimorph cantilever consist of a 0.8 fm thick PZT layer on a SiNx elastic supporting layer, which becomes vibration when ac voltage is applied to the piezoelectric layer. The dielectric constant (at 100 kHz) and remanent polarization of PZT films were 1050 and 25 ${\mu}$C/$\textrm{cm}^2$, respectively. Electromechanical characteristics of the micromachined PZT cantilever in air with 200-600 $\mu\textrm{m}$ lengths are discussed in this presentation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.79-79
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• 2008

We report the growth of $Ba_{0.5}Sr_{0.5}TiO_3$(BST) thin films and their substrate-dependent electrical characteristics. BST thin films were deposited on alumina(non-single crystal), $Al_2O_3$(100) substrates by Nd:YAG Pulsed Laser Deposition(PLD) with a 355nm wavelength at substrate temperature of $700^{\circ}C$ and post-deposition annealing at $750^{\circ}C$ in flowing $O_2$ atmosphere for 1hours. BST materials had been chosen due to high dielectric permittivity and tunability for high frequency applications, To analyze the oxygen partial pressure effects, deposited films at 1, 10, 50, 100, 150, 200, 300 mTorr. The effects of oxygen pressure on structural properties of the deposited films have been investigated by X-ray diffraction(XRD) and atomic force microscope(AFM), respectively. Then we manufactured a inter-digital capacitor(IDC) patterns twenty fingers and $10{\mu}m$ gap, $700{\mu}m$ length and electrical properties were characterized. The results provide a basis for understanding the growth mechanisms and basic structural and electrical properties of BST thin films as required for tunable microwave devices applications such as varactors and tunable filters.

• 한국전기전자재료학회논문지
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• 제26권2호
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• pp.98-103
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• 2013

The alumina substrates that Ni electrode was printed on and the multi-layered PTCR thermistors of which composition is $(Ba_{0.998}Ce_{0.002})TiO_3+0.001MnCO_3+0.05BN$ were fabricated by a thick film process, and the effect of re-oxidation temperature on their resistivities and resistance jumps were investigated, respectively. Ni electroded alumina substrate and the multi-layered PTC thermistor were sintered at $1150^{\circ}C$ for 2 h under $PO_2=10^{-6}$ Pa and then re-oxidized at $600{\sim}850^{\circ}C$ for 20 min. With increasing the re-oxidation temperature, the room temperature resistivity increased and the resistance jump ($LogR_{290}/R_{25}$) decreased, which seems to be related to the oxidation of Ni electrode. The small sized chip PTC thermistor such as 2012 and 3216 exhibits a nonlinear and rectifying behavior in I-V curve but the large sized chip PTC thermistor such as 4532 and 6532 shows a linear and ohmic behavior. Also, the small sized chip PTC thermistor such as 2012 and 3216 is more dependent on the re-oxidation temperature and easy to be oxidized in comparison with the large sized chip PTC thermistor such as 4532 and 6532. So, the re-oxidation conditions of chip PTC thermistor may be determined by considering the chip size.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1990년도 하계학술대회 논문집
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• pp.227-230
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• 1990

The addition of titanium has come to produce an increase in the conductivity of ${\alpha}-Fe_2O_3$ and has been shown NTC ( negative temperature coefficient ) characteristics. Titanium enters the ${\alpha}-Fe_2O_3$ lattice substitutionally as $Ti^{4+}$,thus producing an $Fe^{2+}$ and maintaining the average charge per cation at three. Thus the $Fe^{2+}$ acts as a donor center with respect to the surrounding $Fe^{3+}$ ions. The sintering temperature, compacting pressure and sintering tire have an effect on the electrical properties. C-V and other properties have been measured on polycrystalline samples of ${\alpha}-Fe_2O_3$ containing small deviations from stoichiometry and small amounts of added Titanium. This measurment was made in the course of an investigation of the NTC mechanism in oxides whose cations have a partially filled d-level. C-V and frequency properties have been applied to the measurement of the trap barrier properties at the grain boundary. The double Schottky barrier at the grain boundary is the major cause of the NTC mechanism in NTC thermistor of ${\alpha}-Fe_2O_3$ containing N-type impurity.

• 생명과학회지
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• 제12권2호
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• pp.151-157
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• 2002

한방재료의 하나인 택사(Alismatis Rhizoma, AR)로부터 단백성 trypsin inhibitor(TI)를 분리, 정제하여 특성을 조사하였다. 정제과정은 0-80.% 포화 황산암모늄을 이용한 염석법, DEAE-cellulose ion exchange chromatography, Sep-hadex G-150 chromatography 등을 이용하였다. 정제된 ARTI의 분자량을 gel filtration과 SDS-PAGE 한 결과 모두 약 23,000 Da으로 나타나 monomer로 되어 있는 것으로 나타났다. 온도안정성에 있어 0-6$0^{\circ}C$에서는 안정하였으나 그 이상의 온도에서는 약 35%가지 안정성이 떨어졌다. ARTI와 상품화된 soybean kunitz inhibitor의 저해능을 비교해 본 결과 ARTI 및 soybean inhibitor 각각의 농도가 0.071 $\mu$M, 1.7 $\mu$M일 때 0.025 g/$m\ell$ trypsin활성을 50% 정도 저해하는 것으로 나타났다. ARTI의 trypsin의 가수분해반응에 대한 저해형태는 비경쟁적 저해형인 것으로 나타났으며 km값은 0.81 $\mu$M이었다.

• 한국물환경학회지
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• 제25권4호
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• pp.522-529
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• 2009

To supply safe drinking water to areas lacking in water supply and drainage system, such as rural area and military bases in proximity to Demilitarized Zone, effective method for treating organic contaminants such as MTBE is required. This study focuses on seeking optimal conditions for effective degradation of MTBE using a bath type ultrasound reactor. Effectiveness of MTBE degradation by ultrasound is dependent on the frequency, power, temperature, treatment volume, initial concentration, catalyst, etc. In this study the degradation rate of MTBE by ultrasound was proportional to power/unit volume ratio and removal is relatively more efficient for 0.1 mM than for 1 mM of MTBE solution. Efficiency of ultrasound treatment for 1 mM MTBE solution was enhanced under bath temperature of $30^{\circ}C$ compared to $4^{\circ}C$, but the temperature effect was negligible for 0.1 mM MTBE solution. Also for 0.1 mM MTBE solution, effect of catalyst such as $TiO_2$ and $Fe^0$ on treatment speed was negligible, and zeolite even increases the time taken for the degradation. Under these specific experimental conditions of this study, the most determinant factor for degradation rate of MTBE in solution was frequency and power of ultrasound. The results have shown that a continuous ultrasound reactor system can be used for small scale remediation of organically polluted groundwater, under optimal conditions.