• 전자공학회논문지A
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• 제29A권7호
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• pp.73-81
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• 1992

We have investigated the thermal reaction property and the oxygen behavior of TiN/Ti/Si structure after different hear treatments using x-ray photoelectron spectroscopy and cross-sectional transmission electron microscopy measurements. During the heat treatment in N$_2$ amibient, the considerable amount of oxygen atoms incorporates into TiN/Ti/Si Structures. It is found that oxygen atoms pile up at the top surface of TiN and TiN/Ti interface, forming a compound of TiO$_2$ above $600^{\circ}C$. Inside the TiN film, the oxygen content increases as the annealing temperature increases, mostly TiO and Ti$_2$O$_3$ rather than thermodynamically stable TiO$_2$. Above the annealing temperature of 55$0^{\circ}C$, the TiSi$_2$ formation has initiated. One thing to note is that a severe blistering is observed in the sample annealed at $600^{\circ}C$, due to (1) the difference of thermal expansion coefficient between TiN and Si` (2) the compressive stress induced by the volume reduction caused by the Ti-Silicide grain while elevating temperatures.

• 한국세라믹학회지
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• 제30권6호
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• pp.441-448
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• 1993

The Ba1-xSrxTiO3 thin films deposited on ITO-coated glass substrate at 55$0^{\circ}C$ by rf magnetron sputtering method have individual preferential orientations as a function of composition (X=0, 0.25, 0.5, 0.75, 1) due to the stress relief interactions among the intrinsic compressive stress, thermal tensile stress adn extrinsic compressive stress (compressive stress in case of BaTiO3(Tc=12$0^{\circ}C$) and Ba0.75Sr0.25TiO3(Tc=57$^{\circ}C$)). This behavior also appears on the (BaSr)TiO3 thin films (X=0.5) deposited on ITO-coated glass substrate at deposition temperature between 35$0^{\circ}C$ and 55$0^{\circ}C$. The composition of Ba1-xSrxTiO3 thin films deposited on ITO-coated glass substrate at 55$0^{\circ}C$ is close to stoichiometry (1.009~1.089 in A/B ratio), but the compositional deviation from a stoichiometry is larger as SrTiO3 is added. The morphology of Ba1-xSrxTiO3 thin films is very similar for over all substrate temperatures, and the roughness due to the differences of cluster size is the smallest at X=0.25.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part 1
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• pp.107-108
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• 2006

The effect of WC or NbC addition on various properties of Ti(C0.7N0.3)-Ni cermets was investigated. The microstructure oj Ti(C0.7N0.3)-xWC-20Ni showed a typical core/rim structure, irrespective of the WC content, whereas the structure oj Ti(C0.7N0.3)-xNbC-20Ni was different and was dependent on the NbC content. The hardness (HV) and the fracture toughness (KIC) had a tendency to increase marginally, while the coercive force (HC) and the magnetic saturation $(4{\pi}{\sigma})$ decreased gradually with an increase in WC or NbC content in the systems studied. In addition, increasing WC content in Ti(C0.7N0.3)-xWC-20Ni system, decarburization was retarded, while denitrification was accelerated

• 한국분말재료학회지
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• 제21권4호
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• pp.301-306
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• 2014

Titanium alloys are extensively used in high-temperature applications due to their excellent high strength and corrosion resistance properties. However, titanium alloys are problematic because they tend to be extremely difficult-to-cut material. In this paper, the powder synthesis, spark plasma sintering (SPS), bulk material characteristics and machinability test of hybrid $Ti_2AlC$ ceramic bulk materials were systematically examined. The bulk samples mainly consisted of $Ti_2AlC$ materials with density close to theoretical value were synthesized by a SPS method. Random orientation and good crystallization of the $Ti_2AlC$ was observed at $1100^{\circ}C$ for 10 min under SPS sintering conditions. Scanning electron microscopy results indicated a homogeneous distribution and nano-laminated structure of $Ti_2AlC$ MAX phase. The hardness and electrical conductivity of $Ti_2AlC$ were higher than that of Ti 6242 alloy at sintering temperature of $1000^{\circ}C{\sim}1100^{\circ}C$. Consequently, the machinability of the hybrid $Ti_2AlC$ bulk materials is better than that of the Ti 6242 alloy for micro-EDM process of micro-hole shape workpiece.

• 한국진공학회지
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• 제6권3호
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• pp.181-186
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• 1997

TiC(001) 면위에 Mg금속을 증착시킨 후 상온에서 산소를 노출시키는 방법으로 hetero-epitaxial MgO막을 성장시켰으며, 성장된 MgO epitaxial막의 구조를 비행시간형 직 충돌 이온산란분광법을 사용하여 해석하였다. MgO막은 산화 직후 무질서한 배열을 갖으나, 약 $300^{\circ}C$의 가열에 의해서 1$\times$1구조로 전환된다. TiC(001) 위에 성장된 MgO막은 다음과 같은 구조를 갖고 있음이 밝혀졌다. Mg 및 O원자는 TiC의 on-top site에 위치하고, 면내방 향의 격자상수는 TiC의 격자상수와 일치하며, MgO막의 대부분은 2층 이내의 원자층으로 구성되어 있다.

• E2M - 전기 전자와 첨단 소재
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• 제8권1호
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• pp.56-63
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• 1995

MESFETs of the Ti/Au and Ti/Pd/Au gate were fabricated on n-type GaAs. Interdiffusion at Schottky interfaces, Schottky contact properties, and MESFET characteristics with heat treatment were investigated. Ti of Ti/Au contact and Pd of Ti/Pd/Au contact acted as a barrier metal against interdiffusion of Au at >$220^{\circ}C$. Pd of Ti/Pd/Au contact acted as a barrier metal even at >$360^{\circ}C$, however, Ti of Ti/Au contact promoted interdiffusion of Au instead of role of barrier metal. As the heat treatment temperature increases, in the case of both contact, saturated drain current and pinch off voltage decreased, open channel resistance increased, and degree of parameter variation in Ti/Au gate was higher than in Ti/Pd/Au gate at >$360^{\circ}C$ Schottky barrier height of Ti/Au and Ti/Pd/Au contacts was 0.69eV and 0.68eV in the as-deposited state, respectively, and Fermi level was pinned in the vicinity of 1/2Eg. As the heat treatment temperature increases, barrier height of Ti/Pd/Au contact increased, however, decreased at >$360^{\circ}C$ in the case of Ti/Au contact. Ideality factor of Ti/Au contact was nearly constant regardless of heat treatment, however, increased at >$360^{\circ}C$ in the case of Ti/Au contact. From the results above, Ti/Pd/Au was stable gate metal than Ti/Au.

• Applied Microscopy
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• 제29권2호
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• pp.255-263
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• 1999

Co/Ti 다층 박막 구조에서 증착 박막의 두께를 조절하여 세 가지 조성의 다층 박막을 형성시키고, 후속 열처리 공정을 진행시키면서, 다층 박막 구조에서의 계면 반응에 의한 미세 구조 변화와 전기, 자기적 특성 변화를 살펴보았다. 1. Co/Ti다층 박막의 계면 반응은 후속 열처리 온도에 따라 다른 양상을 나타냈다. $200^{\circ}C$의 저온에서 열처리 한 Co/Ti 다층 박막의 계면 반응은, 결정질 Co와 Ti을 계면 반응물로 소모시키면서 비정질 층을 성장시키는 비정질화 반응이 활발이 일어났다. 한편, $300^{\circ}C$와 $400^{\circ}C$의 고온에서 열처리한 Co/Ti 다층 박막의 계면 반응은 새로운 화합물 결정질 CoTi상을 형성시키는 결정화 반응이 우세했다. 2. Co/Ti 다층 박막의 미세구조 변화는 계면에서의 비정질화 반응의 정도에 의존하고, 비정질화 반응은 계면의 분율에 따라 다르게 나타났다. 즉, 계면의 분율이 가장 많은 Co 2nm/Ti 2 nm다층 박막에서 초기 증착 단계의 비정질화 반응이 가장 우세하여 다른 두 조성의 Co/Ti 다층 박막의 미세 구조 변화와 차이를 보였다. 3. 저온 열처리에 따른 X-선 회절 피크변화에서 Ti피크의 감소율이 Co피크보다 더 크게 관찰된 것으로부터 Co/Ti 다층 박막의 계면에서의 결정질 Co와 Ti의 확산 반응에서 Ti이 비정질화 반응의 주 확산자로 작용한 것을 알 수 있다. 4. Co/Ti 다층 박막에서, 비정질층의 생성 및 성장에 의해 박막의 전기적 저항이 증가하였다.

• 한국세라믹학회지
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• 제45권9호
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• pp.544-548
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• 2008

The formation of $TiB_2-SiC$ ceramics from $TiB_2$-Polycarbosilane (PCS) mixtures was investigated. The powder mixture of $TiB_2$ with PCS was pressed at $300^{\circ}C$ with 200 MPa and sintered at $1700{\sim}2000^{\circ}C$ for 1 h in a flowing Ar atmosphere. The sintered density of $TiB_2$ with PCS is 93.7% after sintering at $2000^{\circ}C$ for 1 h, which is slightly smaller than that of the specimen without PCS. The microstructure of $TiB_2$ with PCS consists of small and uniform $TiB_2$ particles with well dispersed SiC particles derived from PCS. It is believed that the addition of PCS was effective to suppress the grain growth of $TiB_2$.

• The Korean Journal of Ceramics
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• 제1권4호
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• pp.214-218
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• 1995

Partially stabilized zironia with magnesia (Mg-PSZ) is known as one of the toughest monolithic ceramics. However, the very large grain sizes obtained after sintering at a high solution-heat treatment temperature in the cubic region of the phase diagram limit the strength of this material rather modest. In this study fine-grained Mg-PSZ materials were fabricated by adding TiC particles as a dispersed phase. Samples were hot-pressed at $1750^{\circ}C$ and then annealed at $1420^{\circ}C$ for various times. Grain growth was retarded severely by the TiC particles resulting in grain sizes smaller by more than one order of magnitude than those of PSZ without TiC. The fine-grained microstructure lead to doubly-increased fracture strength while maintaining the same level of high fracture toughness as that of conventional Mg-PSZ without TiC particles.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.54-54
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• 2011

The demand for low-friction, wear and corrosion resistant components, which operate under severe conditions, has directed attentions to advanced surface engineering technologies. The Filtered Vacuum Arc Cathode Deposition (FVACD) process has demonstrated atomically smooth surface at relatively high deposition rates over large surface areas. Preparation of Ti-Si-C-N nanocomposite coatings on (100) Si and stainless steel substrates with tetramethylsilane (TMS) gas pressures to optimize the film preparation conditions. Ti-S-C-N coatings were characterized using X-ray diffraction, X-ray photoelectron spectroscopy, transmission electron microscopy, nanoindentation, Rockwell C indentation and ball-on-disk wear tests. The XRD results have confirmed phase formation information of TiSiCN coatings, which shows mixing of TiN and TiC structure, corresponding to (111), (200) and (220) planes of TiCN. The chemical composition of the film was investigated by XPS core level spectra. The binding energy of the elements present in the films was estimated using XPS measurements and it shows present of elemental information corresponding to Ti2p, N1s, Si 2p and C1. Film hardness and elastic modulus were measured with a nano-indenter, and film hardness reached 40 GPa. Tribological behaviors of the films were evaluated using a ball-on-disk tribometer, and the films demonstrated properties of low-friction and good wear resistance.