• Journal of Plant Biology
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• v.39 no.3
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• pp.179-184
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• 1996

The purpose of this study is to obtain the most efficient combination of Agrobacterium tumefaciens strains and Ti plasmids for the construction of dicotyledonous plant vector system. Ti plasmid-curing A. tumefaciens A136 and KU12C3 were transformed with four kinds of Ti plasmids, pTiBo542, pTiA6, pTiKU12 and pTiAch5, respectively. The stems of 28 species of dicotyledonous plants were then inoculated with these transformants and examined for crown gall formation. The different combination of A. tumefaciens strains and Ti plasmids showed quite a difference in terms of the crown gall formation. Agrobacterium strins A136 and KU12C3 have a same plant host range in case that both strains harour the same kind of Ti plasmid, pTiBo542 or pTiAch5. However, the above-mentioned both strains have quite different host range in the event of containing the same Ti plasmid, pTiKU12 or pTiA6. In case that KU12C3 contains pTiA6 or pTiKU12, this strain has a wider plant host range than A136. The plant host range of pTiBo542 is the widest, followed by pTiA6, pTiKU12 and pTiAch5. Twelve plants among 28 tested plants are not transformed by any virulent Agrobacterium strains used in this study. In conclusion, A. tumefaciens KU12C3 and A136 harboring pTiBo542 showed the widest host range for transforming dicotyledonous plants. Also, it was acertained that the host range of Ti plasmids is affected by chromosomal level.

• Journal of the Korean Society for Heat Treatment
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• v.22 no.1
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• pp.3-7
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• 2009

Variation in oxidation behavior with heat treatment temperature is investigated for a Ni-Ti alloy using X-ray diffraction, DSC (differential scanning calorimetry) and Auger electron spectroscopy. And the effect of oxidation on transformation behavior and superelasticity is characterized. A cold-worked 50.6Ni-Ti alloy is oxidized at 300-$700^{\circ}C$ for 1 hr in the air atmosphere. With an increase in heating temperature, the structure of $TiO_2$ changes from amorphous (300 and $400^{\circ}C$) to anatase ($500^{\circ}C$), and to rutile ($700^{\circ}C$). Activation energy of oxidation for NiTi is measured to be 51 Kcal/mol when heating temperature is $500^{\circ}C$ or above. Since Ti reacts preferably with oxygen, Ni content increases between matrix and oxide, forming $Ni_{3}Ti$ compounds. The resultant of oxidation decreases significantly $M_s$ and $A_s$ temperature in the specimen oxidized at $900^{\circ}C$ with $B_2{\rightarrow}M$ transformation path. An extra is found on cooling between two peaks in the specimen with $B_2{\rightarrow}R{\rightarrow}M$ one which is oxidized at $900^{\circ}C$ and aged at $500^{\circ}C$. Oxidation deteriorates superelasticity due to formation of Ni-rich compound.

• Journal of Powder Materials
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• v.14 no.3 s.62
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• pp.208-214
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• 2007

The microstructure and hardness of (W,Ti)C cemented carbides with a different metallic binder composition of Ni and Co fabricated by powder technology were investigated. The densifications of the prepared materials were accomplished by using vacuum sintering at $1450^{\circ}C$. Nearly full dense (W,Ti)C cemented carbides were obtained with a relative density of up to 99.7% with 30 wt.% Co and 99.9% with 30 wt.% Ni as a metallic binder. The average grain size of the (W,Ti)C-Co and the (W,Ti)C-Ni was decreased by increasing the metallic binder content. The hardness of the dense (W,Ti)C-15 wt%Co and (W,Ti)C-15 wt%Ni, was greater than that of the other related cemented carbides; in addition, the cobalt-based cemented carbides had greater hardness values than the nickel-based cemented carbides.

• Journal of the Korean Society for Heat Treatment
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• v.7 no.4
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• pp.288-297
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• 1994

In this study, lattice parameter, binding energy and microstructures of TiC layer according to the addition of Fe, Cr were investigated in the reactive deposition coating. From the results, the lattice parameters of the TiC layers by using ferro-titanium as a precursor were 4.329~4.339A but the lattice parameters of the TiC layers formed by ferro-titanium and ferro-chromium decreased to 4.316~4.330A. The hardness of the former's was HV(100g) 3,000~3,400kg/mm and the hardness of the latter's was HV (100g) 3,800~3,900. But, regardless of Cr and Fe, the binding energy of TiC layers were 454.75 eV for $Ti2p_{3/2}$ and were 281.85 eV for Cls. Meanwhile, the TiC layers were densified by addition of Fe, Cr and internal defects were reduced Therefore. it can be concluded that the remarkable hardness increment was obtained by the improvement of microstructures of TiC rather than the increase of bond strength or Peierls stress.

• Korean Journal of Materials Research
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• v.5 no.7
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• pp.820-828
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• 1995

Ti-sillcides are formed on an atomically clean Si substrate and its phase transition and surface and interface morphologies are examined depending on the Ti-film thicknesses, deposition temperatures and Si substrate orientations. Ti film thicknesses of 400$\AA$ and 200$\AA$ have been deposited at elevated temperatures from 50$0^{\circ}C$ to 90$0^{\circ}C$ with increments of 10$0^{\circ}C$ on Si(100) and Si(111) Ti-silicides are formed and analyzed with using XRD, SEM, and TEM to verify the phase transition and the surface and interface morphologies. The phase transition from C49 to C54 is observed to occur around $650^{\circ}C$ and examined to show some retardation depending on the substrate orientation and film thickness. This retardation of phase transition is explained by the consideration based on the surface and volume free energies. A rough surface of C49 TiSi$_2$is exhibited because of characteristics of nonuniform diffusion across the interface while the smooth surface and island formation of C54 TiSi$_2$is examined.

• Journal of the Korean Ceramic Society
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• v.40 no.8
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• pp.751-757
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• 2003

Rapid densification of a SiC-30 wt% TiC powder with additive 10 wt% A1$_2$O$_3$-Y$_2$O$_3$-CaO was conducted by Spark Plasma Sintering(SPS). The fully-densified materials can be obtain through the SPS process with very fast heating rate and short holding time. In the present work, the heating rate and applied pressure were kept to be $100^{\circ}C$/min and 40 MPa, while sintering temperature varied from $1600^{\circ}C$ to $1800^{\circ}C$ for 10 min. The full densification of SiC-30 wt% TiC composites with the addition of $Al_2$O$_3$, $Y_2$O$_3$ and CaO was achieved at the temperature above $1700^{\circ}C$ by spark plasma sintering. The XRD found that 3C-SiC and TiC were maintained the entire SPS process temperature, without phase transformation of SiC and formation of YAG phase to $1800^{\circ}C$. The microstructures of the rapidly densified SiC-30 wt% TiC composites consisted of smaller equiaxed SiC grains and larger TiC grains. The biaxial strength of 635.2 MPa and fracture toughness of 6.12 MPaㆍ$m^{1/2}$ were found for the specimen prepared at $1750^{\circ}C$.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.3
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• pp.111-118
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• 2023

MXene, a two-dimensional transition metal carbide or nitride, has recently attracted much attention as a lightweight and flexible electromagnetic shielding material due to its high electrical conductivity, good mechanical strength and thermal stability. In particular, the Ti-based MXene, Ti₃C₂T_x and Ti₂CT_x are reported to have the best electrical conductivity and electromagnetic shielding properties in the vast MXene family. Therefore, in this study, Ti₃C₂T_x and Ti₂CT_x films were prepared by vacuum filtration using Ti₃C₂T_x and Ti₂CT_x dispersions synthesized by interlayer metal etching and centrifugation of Ti₃AlC₂ and Ti₂AlC. The electrical conductivity and electromagnetic shielding efficiency of the films were measured after heat treatment at high temperature. Then, X-ray diffraction and photoelectron spectroscopy were performed to analyze the structural changes of Ti₃C₂T_x and Ti₂CT_x films after heat treatment and their effects on electromagnetic shielding. Based on the results of this study, we propose an optimal structure for an ultra-thin, lightweight, and high performance MXene-based electromagnetic shielding film for future applications in small and wearable electronics.

• Korean Journal of Materials Research
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• v.6 no.2
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• pp.210-220
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• 1996

The purpose of this study is to develop the processing techniques of Fiber Reinforced Metal by Liquid Phase Diffusion Bonding method with SiC fiber as a reinforcing material and CP Ti(Commercial Pure) as a matrix. The microstructure and the distribution of elements in reaction and CP Ti(Commercial Pure) as a matrix. The microstructure and the distribution of elements is reaction zone among CP Ti/Ti-15wt%Cu-20wt%Ni(TCN20)/SiC long fiber were investigated by Optical Microscope, SEM/EDX, EPMA, X-ray and AES. The results obtained in this study are as follows. 1) When Ti matrix composite materials are fabricated under the bonding condition of 1273Kx1200sec, the SiC long fiber was the most suitable reinforcing material for Ti matrix composite materials. 2) With SiC long fiber under same condition, a TiC layer(1.0-1.6$\mu\textrm{m}$) was observed on the surface of SiC long fiber. 3) Liquid Phase Diffusion Bonding has shown the feasibility of production of Ti matrix composite materials.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.68-68
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• 2000

펄스레이저 증착법(이하 PLD)을 이용하여 마이크로파 유전체 소자 및 절연 산화막으로의 응용을 위한 MgTiO3 박막을 다양한 기판상에서 증착하였다. 사파이어 기판에 (a,c-plane Al2O3) 성장된 MgTiO3 박막은 에피텍셜 성장(epitaxial growth)이 되었으며, SiO2/Si 및 Pt/Ti/Si 기판위세 성장된 MgTiO3 박막의 경우 003방향으로 배향(oriented) 되었다. MgTiO3 박막은 450~75$0^{\circ}C$까지 기판온도를 변화시키면서 증착시켰으며, 증착시 산소분압은 50~200 mTorr로 변화시켰다. PLD 증착시 타켓에 조사된 레이저 에너지 밀도는 약 2J/cm2였으며, MgTiO3 박막 증착후 200Torr O2 분위기에서 상온까지 1$0^{\circ}C$/min 의 속도로 냉각시켰다. 사파이어 c-plane 상에서 일머나잇(ilminite) MgTiO3 구조가 55$0^{\circ}C$ 에피텍셜 성장하는 것을 관찰할 수 있었으며, 사파이어 a-plane 상에서는 MgTiO3 구조가 $650^{\circ}C$ 이상부터 110방향으로 배향되며 성장하였다. $600^{\circ}C$ 이상에서 c-축으로 배향된 구조를 갖고 있었다. 증착된 MgTiO3 박막의 조성분석(stoichio metric analysis)을 위해 RBS 분석을 수행하여, 증착에 이용된 타켓과 동일한 조성을 갖는 MgTiO3 박막이 성장된 것을 확인할 수 있었다. 사파이어 기판상에 증착된 MgTiO3 박막은 가시영역에서 투명하였으며, 약 270nm 파장을 갖는 영역에서 급격한 흡수단을 보였다. 이때의 MgTiO3 박막은 AFM 분석을 통해 약 0.87mn rms roughness 값을 갖는 매우 평탄한 표면구조를 갖고 있는 것을 확인하였다. MIM(Pt/MgTiO3/Pt) 구조의 캐패시터를 형성시켜 MgTiO3 박막의 유전특성(dielectric properties)을 관찰하였다. PLD로 성장된 MgTiO3 박막의 유전율(relative dielectric constant)은 약 22였으며, 1MHz에서 약 1.5%의 유전손실(dielectirc loss) 값을 보였다. 또한 이때 MgTiO3 박막은 낮은 유전분산값을 보였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.834-837
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• 2003

In this study, Ohmic contacts make on 3C-SiC using TiN. Ohmic contact resistivity of TiN/3C-SiC was evaluated. Specific contact resistance was calculated by Circular-TLM(transmission line model) method and physics properties were measured using XRD, SEM, respectively. TiN contact is stable at high temperatures and a good diffusion barrier material. The TiN/3C-SiC contacts are thermally stable to annealing temperatures up to $1000^{\circ}C$. The TiN thin-film depostied on 3C-SiC substraes have good electrical properties. Therefore, the TiN/3C-SiC contact can be usefully applied for high-temperature MEMS applications over $500^{\circ}C$.