• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.3
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• pp.487-493
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• 1997

Ti/sic(4H) Schottky barrier diodes were fabricated. The donor concentration and the built-in potential obtained by capacitance-voltage(C-V) measurement was about $2.0{\times}10^{15}{\textrm}{cm}^{-3}$ and 0.65 V, respectively. The ideality factor of 1.07 was obtained from the slope of current-voltage(I-V) characteristics at low current density. The breakdown field under the reverse bias voltage was about $1.7{\times}10^3V/{\textrm}{cm}$ and was very high. The barrier height of Ti for SiC(4H) was 0.91 V, which was determined by the analysis of the saturation current-temperature and the C-V characteristics.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.8
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• pp.875-882
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• 1992

Titanium carbide(TiC) films, known as having excellent characteristics of resistance to wear and corrosion, were deposited on SUS-304 sheets using HCD(Hollow Cathode Discharge) reactive ion plating with acetylene gas as the reactant gas. The characteristics of TiC films were examined by X-ray diffraction, micro-Vickers hardness tester, ${\alpha}$-step, SEM(Scanning Electron Spectroscopy), ESCA(Electron Spectroscopy for Chemical Analysis), and AES(Auger Electron Spectroscopy) and the results were discussed with regard to the changes of various deposition conditions(bias voltage, acetylene flow rate, temperature).

• The Journal of Korean Academy of Prosthodontics
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• v.50 no.3
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• pp.169-175
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• 2012

Purpose: In this study, brazing characteristics of $ZrO_2$ and Ti-6Al-4V brazed joints with increasing temperature were investigated. Materials and methods: The sample size of the $ZrO_2$ was $3mm{\times}3mm{\times}3mm$ (thickness), and Ti-6Al-4V was $10mm(diameter){\times}5mm(thickness)$. The filler metal consisted of Ag-Cu-Sn-Ti was prepared in powder form. The brazing sample was heated in a vacuum furnace under $5{\times}10^{-6}$ torr atmosphere, while the brazing temperature was changed from 700 to $800^{\circ}C$ for 30 min. Results: The experimental results shows that brazed joint of $ZrO_2$ and Ti-6Al-4V occurred at $700-800^{\circ}C$. Brazed joint consisted of Ag-rich matrix and Cu-rich phase. A Cu-Ti intermetallic compounds and a Ti-Sn-Cu-Ag alloy were produced along the Ti-6Al-4V bonded interface. Thickness of the reacted layer along the Ti-6Al-4V bonded interface was increased with brazing temperature. Defect ratios of $ZrO_2$ and Ti-6Al-4V bonded interfaces decreased with brazing temperature. Conclusion: Thickness and defect ratio of brazed joints were decreased with increasing temperature. Zirconia was not wetting with filler metal, because the reaction between $ZrO_2$ and Ti did not occur enough.

• Journal of Welding and Joining
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• v.14 no.2
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• pp.46-56
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• 1996

HAZ impact toughness of Ti-oxide steel was investigated and compared to that of a conventional Ti-nitride steel. Toughness variations of each steel with weld peak temperatures and cooling rates were interpreted with microstructural transformation characteristics. In contrast to Ti-nitride steel showing continuous decrease in HAZ toughness with peak temperature, Ti-oxide steel showed increase in HAZ toughness above $1400^{\circ}C$ peak temperature. The HAZ microstructure of the Ti-oxide steel is characterized by the formation of intragranular ferrite plate, which was found to start from Ti-oxide particles dispersed in the matrix of the steel. Large austenite grain size above $1400^{\circ}C$ promoted intragranular ferrite plate formation in Ti-oxide steel while little intragranular ferrite plate was formed in Ti-nitride steel because of dissolution of Ti-nitrides. Ti-oxides in the Ti-oxide steel usually contain MnS and have crystal structures of TiO and/or $Ti_2O_3$.

• Journal of Powder Materials
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• v.2 no.3
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• pp.216-222
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• 1995

$SiC/TiB_2$ composites of varying $TiB_2$ content from 0 to 52 vol.% were prepared by pressureless sintering. When these composites were sintered at $2150^{\circ}C$ the mechanical properties such as elastic modulus, strength and toughness increased with increasing $TiB_2$ content. On the other hand, at a sintering temperature of $2200^{\circ}C$, the mechanical properties reduced gradually with increasing $TiB_2$ content. The main reason was deduced from the onset of spontaneous microcracking and the critical particle size for microcracking was calculated approximately 5.6 $\mu\textrm{m}$.

• Korean Journal of Metals and Materials
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• v.46 no.10
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• pp.691-699
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• 2008

Electrochemical characteristics of Ti-30Ta-xZr alloys coated with HA/TiN by using magnetron sputtering method were studied. The Ti-30Ta containing Zr(3, 7, 10 and 15wt%) were 10 times melted to improve chemical homogeneity by using a vacuum furnace and then homogenized for 24hrs at $1000^{\circ}C$. The specimens were cut and polished for corrosion test and coating, and then coated with HA/TiN, respectively, by using DC and RF-magnetron sputtering method. The analyses of coated surface and coated layer were carried out by using optical microscope(OM), field emission scanning electron microscope(FE-SEM) and X-ray diffractometer(XRD). The electrochemical characteristics were examined using potentiodynamic (-1,500 mV~ + 2,000 mV) and A.C. impedance spectroscopy(100 kHz ~ 10 mHz) in 0.9% NaCl solution at $36.5{\pm}1^{\circ}C$. The microstructure of homogenized Ti-30Ta-xZr alloys showed needle-like structure. In case of homogenized Ti-30Ta-xZr alloys, a-peak was increased with increasing Zr content. The thickness of TiN and HA coated layer showed 400 nm and 100 nm, respectively. The corrosion resistance of HA/TiN-coated Ti-30Ta-xZr alloys were higher than that of the non-coated Ti-30TaxZr alloys, whic hindicate better protective effect. The polarization resistance($R_p$) value of HA/TiN coated Ti-30Ta-xZr alloys showed $8.40{\times}10^5{\Omega}cm^2$ which was higher than that of non-coated Ti-30Ta-xZr alloys.

• Korean Journal of Materials Research
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• v.11 no.3
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• pp.203-206
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• 2001

The effects of SrTiO$_3$ addition and sintering temperature on the microstructure and magnetic properties of yttrium iron garnet (YIG) were investigated. The lattice Parameter increasing of sintered YlG with small amount of SrTiO$_3$ addition was supposed to be substituted $Y^{+3}$, Fe$^{+3}$ ions to Sr$^{+2}$,Ti$^{+4}$ ions which are relatively large in ionic ranius. A YIG specimen sintered at 142$0^{\circ}C$ with 0.2mol% SrTiO$_3$ showed above 98% densification of theoretical density. Saturation magnetization (M$_s$) at room temperature decreased a little bit with increasing SrTiO$_3$, addition but no great chance. In addition, the coercivity (H$_c$) was almost not changed by sintering temperature.

• Korean Journal of Crystallography
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• v.16 no.2
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• pp.102-106
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• 2005

The crystal structure of the title compound has been analyzed by single crystal X-ray diffraction method. The compound crystallized in the triclinic space group $P\bar{1}$ with a=11.300(6) ${\AA}$, c=18.716(10) ${\AA}$, ${\alpha}=82.833(10)^{\circ}$, ${\beta}=83.042(11)^{\circ}$, ${\gamma}=66.139(10)^{\circ}$, $V=2162(2)\;{\AA}^{3}$, Z=2 and R1=0.661 for 10578 unique reflections. The four $C_{5}Me_{5}$ planar groups from a tetrahedron with a mean dihedral angle $70.92(9)^{\circ}$ among them and the $Ti_{4}O_{6}$ cage sits at the center of the tetrahedron. Each Ti atom in the $Ti_{4}O_{6}$ cage is bonded by three bridging oxygen atoms and coordinated by a $C_{5}Me_{5}$ ligand with a mean distance $2.067{\AA}$ from Ti atoms to the centroids of the four five-membered rings. Two oxygen atoms facing each other in $Ti_{4}O_{6}$ cage are $4.051(3){\AA}$ away in average.

• Korean Journal of Materials Research
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• v.10 no.11
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• pp.732-737
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• 2000

Plasma enhanced chemical vapor deposition of $TiO_{2$\pm}{\delta}$ has been carried out using TEMAT [tetrakis(ethylmethylamido) titanium] and $H_2$. Increasing the power from 300 W to 500 W produced the high density plasma, leading to the formation of TiO$_2$films with an increased ratio of Ti to O and a negligible amount of C and N. Applying the bias of 30W to the substrate in creased the growth rate of the film with a slightly increased content of Ti in the film. In addition, $H_2O$ was from either the residual gas in the gase pressure or $H_2(/He)$ gas and actively participated in the formation of $TiO_2$ films. Consequently, Ti ions created in the plasma could be a main contributor to $TiO_2$ formation with a slight amount of $H_2O(~10^{-4}Toor)$ in the ambient, which provided the dissociation of TEMAT.

• Journal of Electrochemical Science and Technology
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• v.3 no.4
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• pp.185-189
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• 2012

A.c. impedances of mechanically polished CP-Ti specimens were measured at open-circuit potential (OCP) with immersion time and under applied anodic potentials between -0.2 and 1 $V_{Ag/AgCl}$ in 0.1 M NaOH solution. Capacitances of native oxide films ($C_{ox,na}$) grown naturally and capacitances of anodic oxide films ($C_{ox,an}$) formed under applied anodic potentials were obtained to examine the growth of native and anodic oxide films in 0.1 M NaOH solution and how to use $C_{ox,na}$ for the surface area measurement of Ti specimen. $1/C_{ox,na}$ and $1/C_{ox,an}$ appeared to be linearly proportional to OCP and applied potential ($E_{app}$), with proportional constants of 0.086 and 0.051 $uF^{-1}\;V^{-1}$, respectively. The $C_{ox,na}$ also appeared to be linearly proportional to geometric surface area of the mechanically polished CP-Ti fixture specimen, with proportional constants of 11.3 and $8.5{\mu}F\;cm^{-2}$ at -0.45 $V_{Ag/AgCl}$ and -0.25 $V_{Ag/AgCl}$ of OCPs, respectively, in 0.1 M NaOH solution. This linear relationship between $C_{ox,na}$ and surface area is suggested to be applicable for the measurement of real surface area of Ti specimen.