• Korean Journal of Materials Research
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• v.12 no.1
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• pp.48-53
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• 2002

$Al_2O_3-SiC$ and $Al_2O_3-SiC$-TiC composite powders were prepared by SHS process using $SiO_2,\;TiO_2$, Al and C as raw materials. Aluminum powder was used as reducing agent of $SiO_2,\;TiO_2$ and activated charcoal was used as carbon source. In the preparations of $Al_2O_3-SiC$, the effect of the molar ratio in raw materials, compaction pressure, preheating temperature and atmosphere were investigated. The most important variable affecting the synthesis of $Al_2O_3-SiC$ was the molar ratio of carbon. Unreactants remained in the product among all conditions without compaction. The optimum condition in this reaction was $SiO_2$: Al: C=3: 5: 5.5, 80MPa compaction pressure under Preheating of $400^{\circ}C$ with Ar atmosphere. However there remains cabon in the optimum condition. The effect of $TiO_2$ as additive was investigated in the preparations of $Al_2O_3-SiC$. As a result of $TiO_2$ addition, $Al_2O_3-SiC$-TiC composite powder was prepared. The $Al_2O_3$ powder showed an angular type with 8 to $15{\mu}m$, and the particle size of SiC powder were 5~$10{\mu}m$ and TiC powder were 2 to $5{\mu}m$.

• Journal of Powder Materials
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• v.6 no.2
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• pp.139-144
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• 1999

The pure Ti, Ni and carbon powders were reaction milled to synthesize the TiC-Ni based cermet powders with ultrafine microstructures. After milling, the ultrafine TiC or amorphous Ti-Ni phase was obtained, respectively, according to the milling condition. The effects of milling variables on the synthesizing behavior of the powders were investigated in detail. The sintered TiC-Ni based cermet of the reaction milled powders consisted of very fine TiC of 0.2~1.5$\mu$m, as compared with that of a commercial cermet of 3~5$\mu$m. This demonstrates the potenial of reaction milling as an effective processing route for the preparation of cermet materials.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.5
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• pp.213-218
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• 2014

An investigation of the influence of $WO_3$ addition with different precursors and preparation methods on the phase formation and selective catalytic reduction (SCR) efficiency of anatase-$TiO_2$ powders has been carried out. An anatase-$TiO_2$ synthesized by precipitation process was used as a catalyst support. For $WO_3(10wt%)/TiO_2$, the W loading to the $TiO_2$ support led to the lower in anatase to rutile transition temperature to ${\sim}900^{\circ}C$ from $1200^{\circ}C$ of the $TiO_2$ support alone. In the case of $WO_3(10wt%)/TiO_2$ SCR powders obtained from a wet process with ammonium meta-tungstate (AMT) precursor, the highest $NO_X$ conversion efficiency was achieved at $450^{\circ}C$ remaining high efficiency at $500^{\circ}C$, while the same composition prepared from a dry process with $WO_3$ addition showed the lowered efficiency with temperature after reaching the efficiency maximum at $350^{\circ}C$. The same tendency has been found that the $V_2O_5(5wt%)-WO_3(10wt%)/TiO_2$ SCR powders obtained from the wet process with AMT precursor has shown the superior $NO_X$ conversion efficiency over 90 % in a wider temperature range of $300{\sim}500^{\circ}C$.

• Transactions on Electrical and Electronic Materials
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• v.1 no.2
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• pp.28-31
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• 2000

BaTiO$_3$cerameic thin films doped with Mn were manufactured by rf/dc magnetron sputter technique. We have investigated crystal structure, surface morphology and PRCR(positive-temperature coefficient of resistance) characteristics of the specimen depending on second heat-treatment temperature. Second heat treatment of the specimen were performed in the temperature range of 400 to 1350$\^{C}$ X-ray diffraction patterns of BaTiO$_3$ thin films show that the specimen heat treated below 600$\^{C}$ is an amorphous phase and the one heat treated above 1100$\^{C}$ forms a poly-crystallization . In this specimen heat-treated at 1300$\^{C}$, a lattice constant ratio(c/a) was 1.188. Scanning electron microscope(SEM) image of BaTiO$_3$ thin films of the specimen heat treated in between 900 and 1100$\^{C}$ shows a grain growth. At 1100$\^{C}$, the specimen stops grain-growing and becomes a poly-crystallization . A resistivity-temperature characteristics of the specimen depends on the doping concentrations of Mn. A resistivity ratio between the value at room temperature and the one above Curie temperature was 10$^4$ for pure BaTiO$_3$ thin films and 10$\^$5/ fo BaTiO$_3$ : additive 0.127mol% MnO

• Journal of Korea Foundry Society
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• v.37 no.4
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• pp.115-122
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• 2017

The aim of this research is to evaluate the wear properties of (TiB+TiC) paticulate reinforced titanium matrix composites (TMCs) by in-situ synthesis. Different particle sizes (1500, $150{\mu}m$) and contents (0.94, 1.88 and 3.76 mass% for Ti, 1.98 and 3.96 mass% for the Ti6Al4V alloy) of boron carbide were added to pure titanium and to a Ti6Al4V alloy matrix during vacuum induction melting to provide 5, 10 and 20 vol.% (TiB+TiC) particulate reinforcement amounts. The wear behavior of the (TiB+TiC) particulate reinforced TMCs is described in detail with regard to the coefficient of friction, the hardness, and the degree of reinforcement fragmentation during sliding wear. The worn surfaces of each sliding wear condition are shown for the three types of wear studied here: transfer layer wear, particle cohesion wear and the development of abrasive areas. The fine reinforcements of TMCs were easily fragmented from the Ti matrix as compared to coarse reinforcements, and fragmented debris accelerated the decrease in the wear resistance.

• Korean Journal of Materials Research
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• v.11 no.12
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• pp.1035-1041
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• 2001

The refining process and solubility of Ti in Al matrix during mechanical alloying (MA) were investigated by using X-ray diffraction (XRD), transmission electron microscopy (TEM) as functions of alloy composition, milling time and ball to powder ratio (BPR). Mechanical alloyed samples were annealed for investigating their stability and the formation behavior of$Al_3Ti$in the temperature range from$200{\circ}C$to$600{\circ}C$. It is observed from present experimental that disappearance of Ti peaks in mechanically alloyed Al-10wt%Ti is not simply attributable to the dissolution of Ti into Al, but associated mainly with extreme refining and/or heavy straining of Ti particles The annealing of the mechanically alloyed Al-Ti powders show differences in aluminide formation behavior when Ti content in Al is equal to or less than l0wt% and higher than l5wt%Ti. When Ti-content in Al is equal to or less than l0wt%, the MA powders transform directly to a global equilibrium state forming $DO_{22}- type\;Al_3$Ti above$400{\circ}C$. In the Al-Ti samples with equal to or higher than l5wt%Ti, transitional phases of cubic$Al_3Ti$and tetragonal $Al_{24}Ti_8$ are formed above$400{\circ}C$. They are stable only below$500{\circ}C$, and, $DO_{22}-type\;Al_3Ti$ becomes dominant aluminide at temperature higher than$ 600{\circ}C$.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1228-1229
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• 2008

The composites were fabricated 61[vol.%] ${\beta}$-SiC and 39[vol.%] $TiB_2$ powders with the liquid forming additives of 12[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid by pressure or pressureless annealing at 1,650[$^{\circ}C$] for 4 hours. Reactions between SiC and transition metal $TiB_2$ were not observed in the microstructure and the phase analysis of the SiC-$TiB_2$ electroconductive ceramic composites. Phase analysis of SiC-$TiB_2$ composites by XRD revealed mostly of ${\alpha}$-SiC(6H), $TiB_2$, and In Situ $YAG(Al_5Y_3O_{12})$. The relative density, the flexural strength and the Young's modulus showed the highest value of 88.32[%], 136.43[MPa] and 52.82[GPa] for pressure annealed SiC-$TiB_2$ composites at room temperature. The electrical resistivity showed the lowest value of 0.0162[${\Omega}{\cdot}cm$] for pressure annealed SiC-$TiB_2$ composite at 25[$^{\circ}C$]. The electrical resistivity of the pressure annealed SiC-$TiB_2$ composite was positive temperature coefficient resistance (PTCR) but the electrical resistivity of the pressureless annealed SiC-$TiB_2$ composites was negative temperature coefficient resistance(NTCR) in the temperature ranges from 25[$^{\circ}C$] to 700[$^{\circ}C$].

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.5
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• pp.510-515
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• 1999

Synthesize of anatase type $TiO_2$ from $TiCl_4$ solution was studied. KOH was used on dehydration reaction of $TiCl_4$ solution. Products of dehydration reaction was calcined at 300, 500, 700, 900, $1000^{\circ}C$ during 1hour. Calcined products was studied by XRD, DTA, and FT-IR for effect of calcined temperature. The results are as follow. \circled1 Product pf dehydration reaction at$ 90^{\circ}C$ was semicrystalline anatase type $TiO_2$ because it has a peak vary broad and low at the position of anatase crysral XRD pattern. \circled2 Pure titanium oxide semi-crystalline products were produced at acid pH condition which convert to anatase crystal at $300^{\circ}C$ and to rutile crystal at $700^{\circ}C$. \circled3 The chemical composition of semicrystalline products which was produce at alkali pH conditions, were potasium titante. Potasium-titanate semi-crystalline products crystallized at 630~$640^{\circ}C$ \circled4 The transition temperature of potassium dopped titanium oxide semi-crystalline products was increased with the contents of potasium. \circled5 The optimum synthesise condition of anatase $TiO_2$ products from $TiCl_4$ and KOH are pH 3~5 and $300^{\circ}C$ calcination.

• Korean Journal of Materials Research
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• v.2 no.3
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• pp.207-212
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• 1992

The defect structure of calcium titanates with CaO excess or $TiO_2$ excess was studied by measuring electrical conductivities as a funcition of oxygen partial pressure at $85O^{\circ}C$ to $1050^{\circ}C$. Execess CaO may divide itself equally between A and B sites, resulting in $Ca_{Ti}$" and Vo", while excess $TiO_2$ form $V_{Ca}$" and Vo". The equilibrium electrical conductivity data indicate that the solubilities of CaO and $TiO_2$ in $CaTiO_3$ are 5000ppm and 2000ppm, respectively. Oxygen vacancies contributed to the ionic conduction which flatten the conductivity minima and did not make any defect association with oppositely charged defects.ely charged defects.

• Journal of the Korean Ceramic Society
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• v.33 no.7
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• pp.802-808
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• 1996

PbTiO3 thin films were fabricated onto MgO(100) single crystal substrate by reactive D. C magnetron sput-tering of Pb and Ti metal in an oxygen and argon gas mixture. The annealing of the thin films resulted in the decrease of both the c-axis orientation ratio and the lattice parameter. It is well known that the c-axis lattice parameter of thin film is dependent on the Pb/(Pb+Ti)ratio and the residual stress in the film The PbTiO3 thin films with a Pb/(Pb+T) ratio ranging from 0.45 to 0.57 were fabricated and annealed. The structure of the film the c-axis orientation ratio and the lattice parameter were not dependent on the Pb/(Pb+Ti) ratio before and after annealing. These experimental results proved that the decrease of the c-axis lattice parameter under the annealing conditions was due to the relaxation of the intrinsic stress in the film. This relaxation of the intrinsic stress caused the decrease of the c-axis orientation ratio and this phenomenon can be explained by c-axis growth lattice model.