• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.29A no.7
• /
• pp.73-81
• /
• 1992

We have investigated the thermal reaction property and the oxygen behavior of TiN/Ti/Si structure after different hear treatments using x-ray photoelectron spectroscopy and cross-sectional transmission electron microscopy measurements. During the heat treatment in N$_2$ amibient, the considerable amount of oxygen atoms incorporates into TiN/Ti/Si Structures. It is found that oxygen atoms pile up at the top surface of TiN and TiN/Ti interface, forming a compound of TiO$_2$ above $600^{\circ}C$. Inside the TiN film, the oxygen content increases as the annealing temperature increases, mostly TiO and Ti$_2$O$_3$ rather than thermodynamically stable TiO$_2$. Above the annealing temperature of 55$0^{\circ}C$, the TiSi$_2$ formation has initiated. One thing to note is that a severe blistering is observed in the sample annealed at $600^{\circ}C$, due to (1) the difference of thermal expansion coefficient between TiN and Si` (2) the compressive stress induced by the volume reduction caused by the Ti-Silicide grain while elevating temperatures.

• Journal of the Korean Ceramic Society
• /
• v.30 no.6
• /
• pp.441-448
• /
• 1993

The Ba1-xSrxTiO3 thin films deposited on ITO-coated glass substrate at 55$0^{\circ}C$ by rf magnetron sputtering method have individual preferential orientations as a function of composition (X=0, 0.25, 0.5, 0.75, 1) due to the stress relief interactions among the intrinsic compressive stress, thermal tensile stress adn extrinsic compressive stress (compressive stress in case of BaTiO3(Tc=12$0^{\circ}C$) and Ba0.75Sr0.25TiO3(Tc=57$^{\circ}C$)). This behavior also appears on the (BaSr)TiO3 thin films (X=0.5) deposited on ITO-coated glass substrate at deposition temperature between 35$0^{\circ}C$ and 55$0^{\circ}C$. The composition of Ba1-xSrxTiO3 thin films deposited on ITO-coated glass substrate at 55$0^{\circ}C$ is close to stoichiometry (1.009~1.089 in A/B ratio), but the compositional deviation from a stoichiometry is larger as SrTiO3 is added. The morphology of Ba1-xSrxTiO3 thin films is very similar for over all substrate temperatures, and the roughness due to the differences of cluster size is the smallest at X=0.25.

• Proceedings of the Korean Powder Metallurgy Institute Conference
• /
• 2006.09a
• /
• pp.107-108
• /
• 2006

The effect of WC or NbC addition on various properties of Ti(C0.7N0.3)-Ni cermets was investigated. The microstructure oj Ti(C0.7N0.3)-xWC-20Ni showed a typical core/rim structure, irrespective of the WC content, whereas the structure oj Ti(C0.7N0.3)-xNbC-20Ni was different and was dependent on the NbC content. The hardness (HV) and the fracture toughness (KIC) had a tendency to increase marginally, while the coercive force (HC) and the magnetic saturation $(4{\pi}{\sigma})$ decreased gradually with an increase in WC or NbC content in the systems studied. In addition, increasing WC content in Ti(C0.7N0.3)-xWC-20Ni system, decarburization was retarded, while denitrification was accelerated

• Journal of Powder Materials
• /
• v.21 no.4
• /
• pp.301-306
• /
• 2014

Titanium alloys are extensively used in high-temperature applications due to their excellent high strength and corrosion resistance properties. However, titanium alloys are problematic because they tend to be extremely difficult-to-cut material. In this paper, the powder synthesis, spark plasma sintering (SPS), bulk material characteristics and machinability test of hybrid $Ti_2AlC$ ceramic bulk materials were systematically examined. The bulk samples mainly consisted of $Ti_2AlC$ materials with density close to theoretical value were synthesized by a SPS method. Random orientation and good crystallization of the $Ti_2AlC$ was observed at $1100^{\circ}C$ for 10 min under SPS sintering conditions. Scanning electron microscopy results indicated a homogeneous distribution and nano-laminated structure of $Ti_2AlC$ MAX phase. The hardness and electrical conductivity of $Ti_2AlC$ were higher than that of Ti 6242 alloy at sintering temperature of $1000^{\circ}C{\sim}1100^{\circ}C$. Consequently, the machinability of the hybrid $Ti_2AlC$ bulk materials is better than that of the Ti 6242 alloy for micro-EDM process of micro-hole shape workpiece.

• Journal of the Korean Vacuum Society
• /
• v.6 no.3
• /
• pp.181-186
• /
• 1997

Time-of-flight impact-collision ion scattering spectroscopy (TOF-ICISS) was applied to study the geometrical structure of epitaxially grown MgO layers on a TiC(001). The hetero-epitaxial MgO layer was able to be deposited by thermal evaporation of magnesium onto the TiC(001) surface and subsequent exposure of oxygen at room temperature. A slight heating of the substrate at around $300^{\circ}C$ was necessary to overcome a thermal barrier for the ordering. The well-ordered MgO structure was confirmed with the 1$\times$1 LEED pattern. TOF-ICISS was useful in studying interface structure between oxide and substrate. The results revealed that the MgO layer is formed at the on-top sites of the TiC(001) substrate and the lateral lattice constant of MgO layer is the same as that of the TiC substrate. The MgO was deposited within two layers on the most parts of the surface.

• Electrical & Electronic Materials
• /
• v.8 no.1
• /
• pp.56-63
• /
• 1995

MESFETs of the Ti/Au and Ti/Pd/Au gate were fabricated on n-type GaAs. Interdiffusion at Schottky interfaces, Schottky contact properties, and MESFET characteristics with heat treatment were investigated. Ti of Ti/Au contact and Pd of Ti/Pd/Au contact acted as a barrier metal against interdiffusion of Au at >$220^{\circ}C$. Pd of Ti/Pd/Au contact acted as a barrier metal even at >$360^{\circ}C$, however, Ti of Ti/Au contact promoted interdiffusion of Au instead of role of barrier metal. As the heat treatment temperature increases, in the case of both contact, saturated drain current and pinch off voltage decreased, open channel resistance increased, and degree of parameter variation in Ti/Au gate was higher than in Ti/Pd/Au gate at >$360^{\circ}C$ Schottky barrier height of Ti/Au and Ti/Pd/Au contacts was 0.69eV and 0.68eV in the as-deposited state, respectively, and Fermi level was pinned in the vicinity of 1/2Eg. As the heat treatment temperature increases, barrier height of Ti/Pd/Au contact increased, however, decreased at >$360^{\circ}C$ in the case of Ti/Au contact. Ideality factor of Ti/Au contact was nearly constant regardless of heat treatment, however, increased at >$360^{\circ}C$ in the case of Ti/Au contact. From the results above, Ti/Pd/Au was stable gate metal than Ti/Au.

• Applied Microscopy
• /
• v.29 no.2
• /
• pp.255-263
• /
• 1999

We have investigated the interfacial reactions in Co/Ti multilayer thin films prepared by DC Magnetron sputtering system. We observed that the amorphous Co-Ti phase formed by SSAR (Solid State Amorphization Reaction) upon annealing at $200^{\circ}C$. Upon annealing treatments at $300^{\circ}C\;and\;400^{\circ}C$, a crystalline phase of CoTi formed at the Co/Ti interface. The sheet resistance of Co/Ti multilayer thin film increased by the formation of the amorphous phase at the Co/Ti interface, which decreased by the formation of new crystalline compound CoTi.

• Journal of the Korean Ceramic Society
• /
• v.45 no.9
• /
• pp.544-548
• /
• 2008

The formation of $TiB_2-SiC$ ceramics from $TiB_2$-Polycarbosilane (PCS) mixtures was investigated. The powder mixture of $TiB_2$ with PCS was pressed at $300^{\circ}C$ with 200 MPa and sintered at $1700{\sim}2000^{\circ}C$ for 1 h in a flowing Ar atmosphere. The sintered density of $TiB_2$ with PCS is 93.7% after sintering at $2000^{\circ}C$ for 1 h, which is slightly smaller than that of the specimen without PCS. The microstructure of $TiB_2$ with PCS consists of small and uniform $TiB_2$ particles with well dispersed SiC particles derived from PCS. It is believed that the addition of PCS was effective to suppress the grain growth of $TiB_2$.

• The Korean Journal of Ceramics
• /
• v.1 no.4
• /
• pp.214-218
• /
• 1995

Partially stabilized zironia with magnesia (Mg-PSZ) is known as one of the toughest monolithic ceramics. However, the very large grain sizes obtained after sintering at a high solution-heat treatment temperature in the cubic region of the phase diagram limit the strength of this material rather modest. In this study fine-grained Mg-PSZ materials were fabricated by adding TiC particles as a dispersed phase. Samples were hot-pressed at $1750^{\circ}C$ and then annealed at $1420^{\circ}C$ for various times. Grain growth was retarded severely by the TiC particles resulting in grain sizes smaller by more than one order of magnitude than those of PSZ without TiC. The fine-grained microstructure lead to doubly-increased fracture strength while maintaining the same level of high fracture toughness as that of conventional Mg-PSZ without TiC particles.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.54-54
• /
• 2011

The demand for low-friction, wear and corrosion resistant components, which operate under severe conditions, has directed attentions to advanced surface engineering technologies. The Filtered Vacuum Arc Cathode Deposition (FVACD) process has demonstrated atomically smooth surface at relatively high deposition rates over large surface areas. Preparation of Ti-Si-C-N nanocomposite coatings on (100) Si and stainless steel substrates with tetramethylsilane (TMS) gas pressures to optimize the film preparation conditions. Ti-S-C-N coatings were characterized using X-ray diffraction, X-ray photoelectron spectroscopy, transmission electron microscopy, nanoindentation, Rockwell C indentation and ball-on-disk wear tests. The XRD results have confirmed phase formation information of TiSiCN coatings, which shows mixing of TiN and TiC structure, corresponding to (111), (200) and (220) planes of TiCN. The chemical composition of the film was investigated by XPS core level spectra. The binding energy of the elements present in the films was estimated using XPS measurements and it shows present of elemental information corresponding to Ti2p, N1s, Si 2p and C1. Film hardness and elastic modulus were measured with a nano-indenter, and film hardness reached 40 GPa. Tribological behaviors of the films were evaluated using a ball-on-disk tribometer, and the films demonstrated properties of low-friction and good wear resistance.