• 제목/요약/키워드: a magnetized inductively coupled $CH_4/H_2/Ar$ plasma

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자화 유도 결합형 $CH_4/H_2/Ar$ 플라즈마를 이용한 GaN 건식 식각 특성 (Dry Etching Characteristics of GaN using a Magnetized Inductively Coupled $CH_4/H_2/Ar$ Plassma)

  • 김문영;심종경;태흥식;이호준;이용현;이정희;백영식
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제49권4호
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    • pp.203-209
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    • 2000
  • This paper proposes the improvement of the etch rate of GaN using a magnetized inductively coupled $CH_4/H_2/Ar$plasma. The gradient magnetic field with the axial direction is investigated using Gauss-meter and the ion current density is measured using double Langmuir probe. The applied magnetic field changes the ion current density profile in the radial direction, resulting in producing the higher density in the outer region than in the center. GaN dry etching process is carried out based on the measurements of the ion current density. The each rate of 2000 /min is achieved with $CH_4/H_2/Ar$ chemistries at 800 W input power, 250W rf bias power, 10 mTorr pressure and 100 gauss magnetic field.

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