• Journal of the Korean Ceramic Society
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• v.32 no.3
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• pp.385-393
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• 1995

Akali-resistant porous glass was prepared by phase separation in Na2O-B2O3-SiO2 system containing ZrO2 and MgO. ZrO2 was added for alkali-resistance and MgO for anti-cracking during leaching. Optimal content of ZrO2 for alkali-resistance was 7wt% and devitrification by heat treatment resulted from further addition. Pore size and pore volume were decreased and specific surface area was increased with ZrO2 addition due to depression in phase separation. Addition of 3mol% MgO to mother glass containing 7wt% ZrO2 was effective for anti-crack during leaching. In this case, with phase separation at 55$0^{\circ}C$ and 5$25^{\circ}C$ for 20 hrs. crack-free porous glasses could be prepared. The relation between pore size r and heat treatment time t at 55$0^{\circ}C$ was D=25.58＋18.16t. According to measurement of gas permeability, the mechanism of gas permeation was Knudsen flow. N2 and He permeability of porous glass which was prepared by heat treatment at 55$0^{\circ}C$ for 20 hrs. were 0.843$\times$10-7mol/$m^2$.s.Pa and 2.161$\times$10-7mol/$m^2$.s.Pa respectively.

• Journal of the Korean Ceramic Society
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• v.32 no.9
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• pp.977-988
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• 1995

Several oxide (ZrO2, Al2TiO5, reactive Al2O3) and nonoxide (SiC, Si3N4, "ALON" (5AlN.9Al2O3)) additives were used as a microfiller for alumina based LCC (Low-Cement-Castable). High temperature prooperties (HMOR, softening under load) and the phase changes of developed LCC on various sintering temperatures were examined. In addition, thermal shock test and corrosion test were accomplished. Based on these data the effects of each microfiller on the properties of LCC were established comparing to those of the commercial LCC with amorphous silica as a microfiller. The castables, containing reactive alumina, ZrO2 and "ALON" (5AlN.9Al2O3) as a first portion, exhibited considerably higher HMOR-values over 100$0^{\circ}C$, better creep behavior, and thermal shock resistance than those of castables with amorphous silica. The LCC with 5% Al2TiO5 showed no corrosion against molten aluminum.nst molten aluminum.

• Journal of Sensor Science and Technology
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• v.4 no.1
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• pp.35-42
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• 1995

Conventional ball-milling technique was used to synthesize NASICON powders. The NASICON powders were made from three kinds of component powders : coarse($ZrO_{2}$, $Na_{3}PO_{4}$, $SiO_{2}$), fine ($ZrO_{2}$, $Na_{3}PO_{4}$, $SiO_{2}$) and fine ($ZrSiO_{4}$, $Na_{3}PO_{4}$) powders. The fine component powders were easily reacted to form the desired product at $1100^{\circ}C$ or higher, whereas incomplete reaction due to the coarse component powders occurred even at $1170^{\circ}C$. The finer the grain size of the starting powders was, the higher the bulk density of NASICON electrolyte after sintering was observed. Almost single phase NASICON electrolytes with more than 95% of the theoretical density, $3.27g/cm^{3}$, could be fabricated by sintering for $40{\sim}60$ hours at temperatures between 1150 and $1170^{\circ}C$.

• Journal of Advanced Marine Engineering and Technology
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• v.33 no.2
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• pp.322-329
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• 2009

Machinability of LAM(Laser Assisted Machining) has been studied for ceramics such as $Al_2O_3$, $Si_3_N4$ and $ZrO_2$ by $CO_2$ laser. It was possible to remove ceramics by PCBN tool because material became softening and deterioration by local laser beam irradiation. The advantage of LAM is the ability to produce larger material removal rates and tool life. But, for cutting of $Al_2O_3$ and $ZrO_2$, stage of laser power control was needed owing to thermal shock with high temperature of workpiece by laser power. And when $Si_3N_4$ was machined by LAM, $N_2$ gas spouted from surface of one cause of high temperature. Characteristics of LAM were analyzed using pyrometer, dynamometer, SEM and EDS to measure temperature of workpiece surface, cutting force, variation of machining surface and structure of lattice respectively. As the result of this study, it was found that machinability of LAM for ceramics in $CO_2$ laser and mechanism of LAM was different according to the kind of ceramics because of properties of materials.

• Bulletin of the Korean Chemical Society
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• v.17 no.11
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• pp.1040-1044
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• 1996

The catalytic dehydrocoupling of bis(1-sila-3-butyl)benzene, 1 by Cp2ZrCl2/Red-Al and Cp2ZrCl2/n-BuLi combination catalysts yielded a mixture of oily and solid polymers. While the catalytic dehydrocoupling of 2-phenyl-l,3-disilapropane, 2 by Cp2ZrCl2/n-BuLi combination catalyst produced a mixture of oily and solid polymers, the catalytic redistribution/dehydrocoupling of 2 by Cp2ZrCl2/Red-Al combination catalyst gave oily polymer. The dehydrocoupling of 1 and 2, unless the prior silane redistribution occurs, seems to initially produce a low-molecular-weight polymer, which then undergoes an extensive cross-linking reaction of backbone Si-H bonds, leading to an insoluble polymer.

• Korean Journal of Materials Research
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• v.11 no.7
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• pp.562-568
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• 2001

Devitrifiable solder glass/$ZrB_2$ sintered composites were prepared by using glass with the composition of $60ZnO-20B_2O_3-10SiO_2-10PbO$(in wt%) and $ZrB_2$, powder as starting materials under the $N_2$atmosphere. $ZrB_2$which the good conduction materials showed sensitive oxidation characteristics, because some parts of the $ZrB_2$in specimens changed into the insulated phase of $ZrO_2$. These Phenomena would be estimated that it caused a few amount of residual oxygen in the furnace and/or specimens and the coordination number change of $B_2O_3$ in the glass. The sintering temperature and the mixed ratios of each phase were control of large ranged the resistivity ranged from 10 to 10$^{3}{\Omega}/cm^2$ orders, and to make a conductible microstructure. From these results, it would be explained that the conduction path of $ZrB_2$particles built up within sintered glass matrix.

• Journal of Welding and Joining
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• v.16 no.1
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• pp.88-97
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• 1998

The surface characteristics of 13Cr stainless steel systems by plasma nitriding were investigated. The plasma nitriding for the 13Cr steels, in which the nitriding forming elements such as Ti, V, W, Nb, Al, Zr and Si were added about 2~3wt.%, respectively, was performed. In all nitrided specimens, .epsilon.-F $e_{2-3}$N, UPSILON.'-F $e_{4}$N and CrN were detected as the nitrides with the a-Fe in the nitrided layer. VN and .betha.- $W_{2}$N were also detected in 13Cr-3V and 13Cr-3W alloys. The growth of the nitrided layer was controlled by the diffusion process. The thickness of the nitrided layer was similar in the 13Cr-2Nb and 3Zr specimens to that of 13Cr(BM) specimen, while the others exhibited the thinner layer. The activation energy for the growth of the nitrided layer in the temperature range of 773-873K was about 130kJ/mol in 13Cr(BM), 13Cr-2Ti, 3W, 3Al, 3Zr and 3Si alloys. The hardness of the nitrided specimens was significantly increased above Hv1000, comparing to the non-nitrided specimen. The specimens with the nitrided forming elements revealed much higher hardness values and, especially, 13Cr-3Al, 3V and 3Si specimens were significantly hardened up to Hv1300.v1300.0.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.11a
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• pp.168-170
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• 1994

Pb($Zr_{0.52}$$Ti_{0.48}$)$O_3$ ceramic thin films were fabricated from an alkoxide-based solution by Sol-Gel method. Pb($Zr_{0.52}$$Ti_{0.48}$)$O_3$ ceramic thin films were formed by spin coating method on Pt/$SiO_2$Si substrate at 4000ppm for 30 seconds. The coating process was repeated 6 times and then heat-treated at temperature between 500∼800[$^{\circ}C$] for 1 hour. The final thickness of the thin films were about 4800[A]. The ferroelectric perovskite phases precipitated under the heat-treated at 700[$^{\circ}C$] for 1 hour. Pb($Zr_{0.52}$$Ti_{0.48}$)$O_3$ thin films heat-treated at 700[$^{\circ}C$] for 1 hour showed good dielectric and ferroclectric properties.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.171-172
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• 2007

We fabricated the metal-ferroelectric-insulator-semiconductor filed-effect transistors (MFIS-FETs) using the $(Bi,La)_4Ti_3O_{12}\;and\;LaZrO_x$ thin films. The $LaZrO_x$ thin film had a equivalent oxide thickness (EOT) value of 8.7 nm. From the capacitance-voltage (C-V) measurements for an Au/$(Bi,La)_4Ti_3O_{12}/LaZrO_x$/Si MFIS capacitor, a hysteric shift with a clockwise direction was observed and the memory window width was about 1.4 V for the bias voltage sweeping of ${\pm}9V$. From drain current-gate voltage $(I_D-V_G)$ characteristics of the fabricated Fe-FETs, the obtained threshold voltage shift (memory window) was about 1 V due to ferroelectric nature of BLT film. The drain current-drain voltage $(I_D-V_D)$ characteristics of the fabricated Fe-FETs showed typical n-channel FETs current-voltage characteristics.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.239-239
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• 2011

최근에 감지막의 pH 감지특성을 평가하기 위해 electrolyte insulator semiconductor (EIS) 구조가 유용하게 이용되고 있다. EIS는 CMOS공정과 호환이 가능하고 구조가 간단하며 pH 변화에 반응속도가 빠르다는 장점을 가지고 있다. EIS 구조를 갖는 pH 센서의 동작 메커니즘은 pH 용액의 수소이온이 감지막의 표면에서 표면전위를 변화시키는 것에 기인한다. pH 감지막으로는 높은 유전율과 안정성이 뛰어난 high-k 물질이 많이 연구되고 있다. 그 중 high-k 물질인 ZrO2은 낮은 열전도도, 산성에서 알칼리성 영역까지의 넓은 화학안정성을 가지며 낮은 열 팽창성, 높은 유전상수 등 우수한 특성을 가지고 있다. 본 실험은 SiO2/ZrO2를 적층한 EIS 소자를 제작하여 열처리에 따른 전기적 특성과 pH 감지 특성을 평가해 보았다. EIS 적층막으로 사용된 SiO2는 실리콘과 high-k 감지막 사이의 계면상태를 양호하게 유지시키기 위한 완충막으로 성장되었다. 후속열처리는 rapid thermal annealing (RTA) 시스템을 이용하여 750$^{\circ}C$, 850$^{\circ}C$, 950$^{\circ}C$로 H2/N2 분위기에서 30초 동안 실시하였다. RTA 열처리 온도가 증가할수록 높은 pH 감지특성이 보였으며 hysteresis 현상과 drift 효과와 같은 non ideal 효과에 강한 immunity가 있는 것을 확인하였다. 결론적으로 SiO2/ZrO2 적층구조를 갖는 EIS는 RTA 950$^{\circ}C$ 열처리를 실시하였을 때 우수한 EIS pH 센서를 제작할 수 있을 것으로 기대된다.