• Journal of the Korean Ceramic Society
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• v.23 no.3
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• pp.44-52
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• 1986

$Al_2O_3-ZrO_2$ ceramics was obtained by the co-precipitation method using $Al_2(SO_4)_2$.$18H_2O$ and $ZrOCl_2$.$8H_2O$ as starting materials $MgCl_2$.$6H_2O$ as a sintering aid and NH4OH as a hydrolyzing agent. The coprecipitate from the above raw materials was calcined at 125$0^{\circ}C$ for 1h and again sintered at 1$650^{\circ}C$ for 2h before measurements of strength hardness and fracture toughness. MgO addition was found to increase mechanical properties of the $Al_2O_3-ZrO_2$ system. The strength and frac-ture toughness of $Al_2O_3-ZrO_2$ ceramics were considered to be increased by stress-induced phase tranforma-tion of $ZrO_2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.325-325
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• 2007

The perovskites in the $LaAlO_3-BaZrO_3$ system (i.e., $(1-x)LaAlO_3-xBaZrO_3$ were fabricated by a solid state reaction and their dielectric properties were investigated. For the compositions of x=0.1~0.9, the mixture of $LaAlO_3$ with a rhombohedral structure and $BaZrO_3$ with a cubic was observed when the sintering was conducted at $1500^{\circ}C$, indicating that the solubility of constituent elements was very low and a narrow solid solution region might exist. The large difference of ionic radii between $La^{3+}$ ion (0.136nm, C.N.=12) and $Ba^{2+}$ ion (0.161nm) or $Al^{3+}$ ion (0.0535nm, C.N.=6) and $Zr^{4+}$ ion (0.072nm) might hinder the mutual substitution. Within the compositions of x=0~0.7, the dielectric constant of the mixture increased with the amount of $BaZrO_3$, i.e., x value, which was in good agreement with the logarithmic mixing rule (In $_{r,i}={\Sigma}v_iln\;_{r,i}$). The increase in $BaZrO_3$ doping decreased $Q{\times}f$ value significantly due to the low $Q{\times}f$ value of $BaZrO_3$ itself, a poor microstructure of the mixture with an increased grain boundary area per volume, and defects in the cation and oxygen sub-lattices which were respectively caused by the evaporation of barium during the sintering process and the substitution of Ba on La-site or Al on Zr-site.

• Journal of the Korean Ceramic Society
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• v.40 no.9
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• pp.909-915
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• 2003

Anodic oxide films on aluminum play an important role as a dielectrics in aluminum electrolytic capacitor. In order to obtain the high capacitance, ZrO$_2$ films were coated on aluminum foils by sol-gel method and then, the properties of anodized films were studied. The coating and drying of the films were repeated 4-10 times and annealed at 300～$600^{\circ}C$ and the triple layer of ZrO$_2$/Al-ZrO$_{x}$ /Al$_2$O$_3$ was formed onto aluminum substrates after anodizing of ZrO$_2$/Al film. The thickness of $Al_2$O$_3$ layer was decreased with increasing the annealing temperature due to the densification of ZrO$_2$ film. The ZrO$_2$ films were crystallized even at 30$0^{\circ}C$ and showed nanocrystalline structure. The. capacitance of aluminum foil annealed at low temperature was higher than that at high temperature. The increase of capacitance was due to the high capacitance of ZrO$_2$ film annealed at low temperature. The capacitance of ZrO$_2$ coated aluminum increased about 3 times compared to that without a ZrO$_2$ layer after anodizing to 400 V. From these results, the aluminum foils with composite oxide layers are found to be applicable to the aluminum electrolytic capacitor.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.2
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• pp.349-351
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• 2011

The formation of oxide superconducting phase fabrication of superconducting wire materials and fabrication of precise superconducting material were studied for developing superconductor application technique. The $ZrO_2$ addition reduced the particle size $BaZrO_3$ trapped in the matrix after the sintering growth. The added $ZrO_2$ was converted to fine particles of $BaZrO_3$ which is the conventional sintering temperature for YBaCuO, $Y_2Ba_1Cu_1O_5$ and CuO are formed as by products of the reaction between $ZrO_2$ and YBaCuO phase. The formation of highly $BaZrO_3$ particle appears to be responsible for the refinement of $BaZrO_3$ phase after the citric acid sintering process.

• Journal of the Korean Ceramic Society
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• v.40 no.1
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• pp.11-17
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• 2003

The effect of$ZrO_2$addition on the microstructure and electrical properties of Ni-Mn oxide NTC thermistors was studied. Major phases present in the sintered bodies of $Ni_{1.0}Mn_{2-x}Zr_xO_4$ were the solid solutions of Ni-Mn-Zr oxides with a cubic spinel structure and the $ZrO_2$ with a tetragonal structure. The $ZrO_2$ was formed by the partial decomposition or incomplete formation of the Ni-Mn-Zr oxides during sintering. With increasing the amount of added $ZrO_2$, the $ZrO_2$ phase increased. The relationship between log resistivity (log p) and the reciprocal of absolute temperature (1/T) of the NTC thermistors prepared was linear, indicative of NTC characteristics. The resistivity, B constant and activation energy of the thermistors increased with increasing $ZrO_2$ content.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.5
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• pp.439-444
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• 2005

We investigated the structural and electrical properties of BLT films grown on Si covered with $ZrO_{2}$ buffer layer. The BLT thin film and $ZrO_{2}$ buffer layer were fabricated using a metalorganic decomposition method. The electrical properties of the MFIS structure were investigated by varying thickness of the $ZrO_{2}$ layer. AES and TEM show no interdiffusion and reaction that suppressed using the $ZrO_{2}$ film as a buffer layer The width of the memory window in the C-V curves for the MFIS structure decreased with increasing thickness of the $ZrO_{2}$ layer. It is considered that the memory window width of MFIS is not affected by remanent polarization. Leakage current density decreased by about four orders of magnitude after using $ZrO_{2}$ buffer layer. The results show that the $ZrO_{2}$ buffer layers are prospective candidates for applications in MFIS-FET memory devices.

• Journal of the Korean Ceramic Society
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• v.21 no.2
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• pp.149-155
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• 1984

The effect of $ZrO_2$ dispersed phase on the mechanical properties in $Al_2O_3$-$ZrO_2$system has been studied. There are both metastable tetragonal phase and stable monoclinic phase of $ZrO_2$particles diespersed in Al2O3 matrix at room temperature. Metastable tetragonal $ZrO_2$ changes to the stable monoclinic structure within the stress field of the crack. And microcracks are formed by the expansion of $ZrO_2$during the tetragonal-monoclinic transformation on cooling. Therefore stress-induced phase transformation and inclusion-induced microcracking contribute to the mec-hanical properties of $Al_2O_3$-$ZrO_2$system. Sintered composites containing 10m/o $ZrO_2$ yield KiC values of 6.5MN/$m^{3/2}$ much greater than that of pure $Al_2O_3$ This increase results from microcrack extension and stress-induced phase transformation absor-bing energy by crack propagation. Flexural strength of composites is decreased considerably in comparison with pure $Al_2O_3$ This decrease results from microcrack as a crack former and higher porosity than pure $Al_2O_3$.

• Journal of the Microelectronics and Packaging Society
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• v.11 no.3 s.32
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• pp.17-22
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• 2004

The microwave dielectric properties of $CaZrO_3$ ceramics with addition of $CaTiO_3$ were studied. The effect of glass addition on the low-temperature sintering and microwave dielectric properties of $CaZrO_3-CaTiO_3$ ceramics were also evaluated to develop the materials for functional substrates of low-temperature co-fired ceramics. When $10-20 wt\%$ of lithium borosilicate glass was added, the sintering temperature of the $CaZrO_3-CaTiO_3$ ceramics decreased from $1450^{\circ}C$ to below $900^{\circ}C$. As the $T_f$ of glass frits and $CaZrO_3$ are slightly negative and that of $CaTiO_3$ is significantly positive, zero $T_f$ could be realized by mixing an appropriate amount of $CaTiO_3$ with $CaZrO_3$. The $CaZrO_3-CaTiO_3$ ceramics sintered at $875^{\circ}C$ with $15wt\%$ glass frits showed the relative density of $98\%$, permittivity of 23, quality factor of 2500 GHz, and temperature coefficient of resonant frequency of $ -3 ppm/^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.34 no.6
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• pp.569-576
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• 1997

Electrically-induced strain and polarization studies of the (1-x)Pb(Mg1/3Nb2/3)O3-PbZrO3 crystalline solutions have been done. Dielectric constants with temperature were investigated for 0$\leq$x$\leq$0.95. With increasing PbZrO3 content the transition maxima were found to move to higher temperature region and DPT (Diffused Phase Transition) properties were decreased for x$\leq$0.60. Phase transition between ferroelectric states and antiferroelectric states was confirmed for 0.93$\times$10-3 for 0.4

• Korean Journal of Materials Research
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• v.2 no.3
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• pp.172-179
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• 1992

$Al_2O_3/ZrO_2$ composites were fabricated by pressureless sintering from commercial powders and/or nano composite powder of $Al_2O_3/ZrO_2$. The Properties of the composites such as density, strength, hardness and fracture toughness were evaluated. Microstructures and fracture surfaces ware also examined. The flexural strength remains unchanged(~640 MPa) as long as the content of commercial powders is not extreamly high, and depends on microstructures of the composites. Fracture toughness(4.3-5.3 $Mpa{\cdot}m^{1/2}$) increases with increasing content of commercial powders. Fractography shows that failure-initiating sources are 1)surface flaws resulting from machining damage, 2)crack-shaped voids formed due to $ZrO_2$ agglomeration, and 3)surface separation caused by inhomogeneous blending and by sinterability difference between nato composite powder and commercial powders of $Al_2O_3/ZrO_2$. Failure mode of the composites was mainly transgranular.