• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05c
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• pp.47-52
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• 2002

A processing method is developed for preparing sol-gel derived $Pb(Zr_{1-x}Ti_x)O_3$ (x=0.5) thin films on Pt-Ir($Pt_{80}Ir_{20}$)-alloy substrates. The as-deposited layer was dried on a plate in air at $70^{\circ}C$. And then it was baked at $1500^{\circ}C$, annealed at $450^{\circ}C$ and finally annealed for crystallization at various temperatures ranging from $580^{\circ}C$ to $700^{\circ}C$ for 1hour in a tube furnace. The thickness of the annealed film with three layers was $0.3{\mu}m$. Crystalline properties and surface morphology were examined using X-ray diffractometer (XRD). Electrical properties of the films such as dielectric constant, C-V, leakage current density were measured under different annealing temperature. The PZT thin film which was crystallized at $600^{\circ}C$ for 60minutes showed the best structural and electrical dielectric constant is 577. C-V measurement show that $700^{\circ}C$ sample has window memory volt of 2.5V and good capacitance for bias volts. Leakage current density of every sample show $10^{-8}A/cm^2$ r below and breakdown voltage(Vb) is that 25volts.

• Proceedings of the Korean Magnestics Society Conference
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• 2003.12a
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• pp.167-167
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• 2003

• Proceedings of the Polymer Society of Korea Conference
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• 2006.10a
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• pp.170-170
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• 2006

[ ${\pi}-conjugated$ ] organic and polymeric semiconductors are receiving considerable attention because of their suitability as an active layer for electronic devices. An organic inverter with a full swing and a high gain can be obtained through the good qualities of the transfer characteristics of organic thin-film transistors (OTFTs); for example, a low leakage current, a threshold voltage ($V_{th}$) close to 0 V, and a low sub-threshold swing. One of the most critical problems with traditional organic inverters is the high operating voltage, which is often greater than 20 V. The high operating voltage may result in not only high power consumption but also device instabilities such as hysteresis and a shift of $V_{th}$ during operation. In this paper, low-voltage and little-hysteresis pentacene OTFTs and inverters in conjunction with PEALD $Al_{2}O_{3}\;and\;ZrO_{2}$ as the gate dielectrics are demonstrated and the relationships between the transfer characteristics of OTFT and the voltage transfer characteristics (VTCs) of inverter are investigated.

• Journal of the Korean Vacuum Society
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• v.5 no.2
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• pp.107-112
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• 1996

Thin films of $Pb(Zr_xTi_{1-x})O_3$)PZT) were grown on $Pt/SiO_2/Si(100)$ at various temperatures by RF magnetron sputtering method. Surface morphology of these films were studied by using Atomic Force Microscopy(AFM). These films were also analyzed by using Atomic Force Microscopy(AFM). These films were also analyzed by using X-ray photoemission spectroscopy(XPS) for determining their chemical composition and their depth profile. It was found that the films grown at the substrated temperature of $300^{\circ}C$ have much more smooth surface characteristics in comparison to those films grown at room temperature, which may be explained in terms of surface mobility of ad-atoms such as Pb. It was also found that Pb enrichment in the near surface region enhanced for the films grown at higher substate temperature.

• Journal of the Korean Ceramic Society
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• v.31 no.5
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• pp.477-484
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• 1994

The yttria stabilized zirconia(YSZ) thin films for solid oxide fuel cell (SOFC) were fabricated by an electrochemical vapor deposition(EVD) technique using YCl3+ZrCl4+H2O gas system. The YSZ films were deposited under reduced pressure at the temperature of 1000~120$0^{\circ}C$ on the porous alumina substrates. The deposition rate, chemical composition and growth morphology were investigated by SEM, XRD, EDS. The growth rates of the films obeyed a parabolic rate law, representing that the growing process is controlled by an electrochemical transport through the YSZ film. The Y2O3 content of the films was about 10 mol%, equal to the composition of metal chloride reactant gases, approximately. The YSZ films were highly dense, the growing features showed columnar structure and surface morphologies were changed with the EVD conditions.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.1030-1033
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• 2004

We herewith report for the effect of dielectric surface modification on the electrical characteristics of organic thin-film transistors (OTFTs). The kist-jm-1 as an organic molecule for the surface modification is deposited onto the surface of zirconium oxide ($ZrO_2$) gate dielectric layer. The OTFTs are elaborated on the flexible plastic substrates through 4-level mask process to yield a simple fabrication process. In this work, we also have examined the dependence of electrical performance on the interface surface state of gate dielectric/pentacene, which may be modified by chemical properties in the gate dielectric surface.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.211.2-211.2
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• 2014

Epitaxial complex oxide thin film heterostructures have attracted a great attention for their multifunctional properties, such as ferroelectricity, and ferromagnetism. Two dimensional electron gas (2DEG) confined at the interface between two insulating perovskite oxides such as LaAlO3/SrTiO3 interface, provides opportunities to expand various electronic and memory devices in nano-scale. Recently, it was reported that the conductivity of 2DEG could be controlled by external electric field. However, the switched conductivity of 2DEG was not stable with time, resulting in relaxation due to the reaction between charged surface on LaAlO3 layer and atmospheric conditions. In this report, we demonstrated a way to control the conductivity of 2DEG in non-volatile way integrating ferroelectric materials into LAO/STO heterostructure. We fabricated epitaxial Pb(Zr0.2Ti0.8)O3 films on LAO/STO heterostructure by pulsed laser deposition. The conductivity of 2DEG was reproducibly controlled with 3-order magnitude by switching the spontaneous polarization of PZT layer. The controlled conductivity was stable with time without relaxation over 60 hours. This is also consistent with robust polarization state of PZT layer confirmed by piezoresponse force microscopy. This work demonstrates a model system to combine ferroelectric material and 2DEG, which guides a way to realize novel multifunctional electronic devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.7
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• pp.667-672
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• 2006

Ferroelectric $Pb(Zr_{0.52}Ti_{0.48})O_3$ (PZT(52/48)) thick films were fabricated by the screen-Printing method on the alumina substrates, and $PbTiO_3$ (PT) Precursor solution, which prepared by sol-gel method, was spin-coated on the PZT(52/48) thick films to obtain a densification. Its structural and electrical properties of the PZT(52/48) thick films with the treatment of PT precursor solution coating were investigated. The particle size of the thick films was increased with increasing the number of coatings and the thickness of the PZT-6 (6: number of coatings) films was about $60{\mu}m$. The relative dielectric constant increased and the dielectric loss decreased with increasing the number of PT sol coatings. The relative dielectric constant and dielectric loss of the PZT-6 thick film were 475 and 2 %, respectively. The remanent polarization, coercive field and breakdown strength of the PZT-6 film were $32.6{\mu}C/cm^2$, 15 kV/cm and 60 kV/cm, respectively.

• Transactions of the Korean hydrogen and new energy society
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• v.21 no.2
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• pp.117-122
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• 2010

BCY($Ba(Ce_{0.9}Y_{0.1})O_{3-\delta}$) oxide, shows high protonic conductivity at high temperatures, and are referred to as hydrogen separation membrane. For high efficiency of hydrogen separation ($H_2$ flux and selectivity) and low fabrication cost, ultimate thin and dense BCY-Ni layer have to be coated on a porous substrate such as $ZrO_2$. Aerosol depostion (AD) process is a novel technique to grow ceramic film with high density and nano-crystal structure at room-temperature, and would be applied to the fabrication process of AD integration ceramic layer effectively. XRD and SEM measurements were conducted in order to analyze the characteristics of BCY-Ni membrane fabricated by AD process.

• Journal of the Korean institute of surface engineering
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• v.49 no.3
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• pp.286-300
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• 2016

Pd-Ag alloy membranes have attracted a great deal of attention for their use in hydrogen purification and separation due to their high theoretical permeability, infinite selectivity and chemical compatibility with hydro-carbon containing gas streams. For commercial application, Pd-based membranes for hydrogen purification and separation need not only a high perm-selectivity but also a stable long-term durability. However, it has been difficult to fabricate thin, dense Pd-Ag alloy membranes on a porous stainless steel metal support with surface pores free and a stable diffusion barrier for preventing metallic diffusion from the porous stainless steel support. In this study, thin Pd-Ag alloy membranes were prepared by advanced Pd/Ag/Pd/Ag/Pd multi-layer sputter deposition on the modified porous stainless steel support using rough polishing/$ZrO_2$ powder filling and micro-polishing surface treatment, and following Ag up-filling heat treatment. Because the modified Pd-Ag alloy membranes using rough polishing/$ZrO_2$ powder filling method demonstrate high hydrogen permeability as well as diffusion barrier efficiency, it leads to the performance improvement in hydrogen perm-selectivity. Our membranes, therefore, are expected to be applicable to industrial fields for hydrogen purification and separation owing to enhanced functionality, durability and metal support/Pd alloy film integration.