• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2000년도 High Temperature Superconductivity Vol.X
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• pp.111-120
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• 2000

Recently, metal oxide films such as MgO or ZrO$_2$ have been studied as buffer layers to fabricate the superconductor with preferred orientation and as diffusion barriers to prevent the reaction between superconductor and metal substrate. In this research, we focused fabrication and characterization of MgO and ZrO$_2$ films on textured metal substrates. We fabricated MgO and ZrO$_2$ films on the Ni metal sheets by sol-gel dipping method. The microstrcures of the films were investigated by SEM and AES analyses. The films were coated with different cycles and dryed at 400$^{\circ}$C and 500$^{\circ}$C . The final films were heat-treated at 700$^{\circ}$C, 800$^{\circ}$C, and 1000$^{\circ}$C, in air atmosphere. We investigated the alignment of MgO and ZrO$_2$ films on Ni metal sheets by XRD and pole figure. The grain growth of metal oxide films was improved by the increase of the drying temperature and annealing temperature. The grain growth was increased with the annealing temperature. The alignment of metal oxide films depended on the thickness.

• 대한치과기공학회지
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• 제33권1호
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• pp.7-14
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• 2011

Purpose: As the demand and importance of aesthetic aspects in dental treatment become higher, much attention is paid to materials used for dental prostheses. Thus, the marginal fidelity of most-commonly used alloy, IPS - Empress and ZrO2 ceramic is compared. Methods: The alloy core made by casting, IPS - Empress core made by pressing and ZrO2 ceramic core made by CAD/CAM are used to make 10 samples respectively. For each core, three points were measures and the optical microscope (Axio Imager.Alm,Zeiss co., Oberkochen, Germany) was used to observe the cores with a magnification of 100. Results: As for alloy, IPS - Empress and ZrO2 ceramic, the average and deviation of their marginal distance are $29.91\;{\pm}11.93{\mu}m$ for alloy, $33.45\;{\pm}8.61{\mu}m$ for IPS - Empress, and $31.55\;{\pm}9.85{\mu}m$ for ZrO2. The one-way ANOVA test was conducted to compare them. However, there was no statistically significant difference among them. Conclusion: The study on marginal fidelity of alloy, IPS - Empress, and ZrO2 ceramic shows they have no marginal fidelity problem clinically. Therefore, if a system is selected based on the patient's condition or treatment method, there will be no problem.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.157-159
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• 2005

MOS capacitors were fabricated to study electrical and chemical properties of Ta-Mo metal alloy with $ZrO_2$. The work function of Ta-Mo alloy were varied from 4.1eV to 5.1eV by controlling the composition. When the atomic composition of Mo is 10%, good thermal stability up to $800^{\circ}C$ was observed and work function of MOS capacitor was 4.1eV, compatible for NMOS application. But pure Ta exhibited very poor thermal stability. After $600^{\circ}C$ annealing, equivalent oxide thickness of tantalum gate MOS capacitor was continuously decreased. Barrier heights of Ta-Mo alloy and pure metal that supported the work function values were calculated from Fowler-Nordheim analysis. As a result of these electrical?experiments, Ta-Mo metal alloy with $ZrO_2$ is excellent gate electrode for NMOS.

• 한국세라믹학회지
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• 제35권9호
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• pp.969-973
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• 1998

Pb(Zr, Ti)O3 (PZT) (Zr:Ti= 52: 48) thin films were prepared on MgO(100) substrates by dipping-py-rolysis process using metal naphthenates as starting materials. Thin films were fabricated by spin coating technique and the precursor films were prefired at 20$0^{\circ}C$ in air for 0.5, 1, 2, 3, and 24 h followed by final heat treatment at 75$0^{\circ}C$ for 30min. Film prefired for 24 h lost orientational properties and pole figure analysis showed the lost of the epitaxial relationship between the films and substrate while highly a/c-axis oriented thin films were obtained for the samples prefired for 1, 2, and 3h.

• 한국재료학회지
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• 제15권2호
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• pp.139-142
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• 2005

[ $ZrO_2$ ] gate dielectric thin films were deposited by radio frequency (rf)-magnetron sputtering and its structure, surface morphology and electrical peoperties were studied. As the oxygen flow rate increases, the surface becomes smoother. The experimental results indicate that a high temperature annealing is desirable since it improves the electrical properties of the $ZrO_2$ gate dielectric thin films by decreasing the number of interfacial traps at the $ZrO_2/Si$ interface. The carrier transport mechanism is dominated by the thermionic emission.

• 한국세라믹학회지
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• 제32권10호
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• pp.1147-1161
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• 1995

When ceramic membrance was made from metal salt solution in place of metal akoxide solution, crack free and good adhesion to supporter was optimized for sol stability and good adhesion force. A starting sol was prepared from aluminum oxychloride aqueous solutjion in order to inhibit the grain growthof Al2O3 during heat treatment. The crack free dip coating can't be achieved in 1mol/ι zirconium oxychloride solution because of the high viscosity which interferes with the hydration copolymerization between Al3+ ion and Zr4+ ion. Thus Al2O3-ZrO2 sol stability and viscosity for dip coating was effective when 0.01 mol/ι zirconium oxychloride was added. The minimizing of crack and achieving better adhesion to the supporter wa obtained by microwave drying, surfactant addition and ultrasonic dip coating in wet atmosphere. The result seems to minimize the capillary force and improve the adhesive ability to supporter during the process. Where the average pore size of Al2O3-ZrO2 ultrafilter ceramic membrane measured 17 Å by the BET method and observed γ-Al2O3 phase with tetragonal zirconia after firing at 700℃.

• 한국수소및신에너지학회논문집
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• 제23권5호
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• pp.448-454
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• 2012

In this paper, a three-dimensional hydrogen absorption model is applied to a thin double-layered annulus ZrCo hydride bed and validated against the temperature evolution data measured by Kang et al. The present model reasonably captures the bed temperature evolution behavior and the 99% hydrogen charging time. The equilibrium pressure expression for hydrogen absorption on ZrCo is derived as a function of temperature and the H/M atomic ratio based on the pressure-composition isotherm data given by Konishi et al. In addition, this present model provides multi-dimensional contours such as temperature and H/M atomic ratio in the thin doublelayered annulus metal hydride region. This numerical study provides fundamental understanding during hydrogen absorption process and indicates that efficient design of the metal hydride bed is critical to achieve rapid hydrogen charging performance. The present three-dimensional hydrogen absorption model is a useful tool for the optimization of bed design and operating conditions.

• 한국초전도ㆍ저온공학회논문지
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• 제15권4호
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• pp.15-20
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• 2013

We investigated the flux pinning properties of both 10 mol% Zr-and Sn-doped $YBa_2Cu_3O_{7-{\delta}}$ (YBCO) films with the same thickness of ~350 nm for a comparative purpose. The films were prepared on the $SrTiO_3$ (STO) single crystal substrate by the metal-organic deposition (MOD) process. Compared with Sn-doped YBCO film, Zr-doped one exhibited a significant enhancement in the critical current density ($J_c$) and pinning force density ($F_p$). The anisotropic $J_{c,min}/J_{c,max}$ ratio in the field-angle dependence of $J_c$ at 77 K for 1 T was also improved from 0.23 for Sn-doped YBCO to 0.39 for Zr-doped YBCO. Thus, the highest magnetic $J_c$ values of 9.0 and $2.9MA/cm^2$ with the maximum $F_p$ ($F_{p,max}$) values of 19 and $5GN/m^3$ at 65 and 77 K for H // c, respectively, could be achieved from Zr-doped YBCO film. The stronger pinning effect in Zr-doped YBCO film is attributable to smaller $BaZrO_3$ (BZO) nanoparticles (the average size ${\approx}28.4$ nm) than $YBa_2SnO_{5.5}$ (YBSO) nanoparticles (the average size ${\approx}45.0$ nm) incorporated in Sn-doped YBCO film since smaller nanoparticles can generate more defects acting as effective flux pinning sites due to larger incoherent interfacial area for the same doping concentration.

• 분석과학
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• 제11권6호
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• pp.421-428
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• 1998

사용후핵연료의 화학특성을 규명하기 위하여 시료 중에 함유되어 있는 핵분열생성물 중 Zr을 분리, 정제하는 연구를 수행하였다. 우라늄과 핵분열생성물 대신 비방사성 금속이온들로 구성된 사용후핵연료 모의 용해용액을 시료로 사용하였다. 12 M HCl 용액으로 전처리한 Dowex $1{\times}8$ 음이온교환수지관에서 Ce, Nd, Cs, Rb, Ba, Sr, Ru, Rh, Pd, Ag 및 Cd을 용리시킨 후 5 M HCl 용액으로 Zr을 95% 이상 분리, 회수할 수 있었다. 용출액에 함유되어 있는 Zr 동위원소의 동중원소인 Mo을 제거하기 위하여 5 M HCl 용액으로 전처리한 Dowex $1{\times}8$ 음이온교환수지관에서 정제하였으며, 실제 PWR 사용후핵연료에 함유되어 있는 Zr 분리, 정제에 적용하여 질량분석한 결과 Mo 및 Sr에 의한 동중원소 영향이 나타나지 않았다.

• 한국재료학회지
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• 제3권3호
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• pp.282-291
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• 1993

첨가원소를 달리한 두 종류의 삽입금속 Cu-10tw% Ti합금과 Cu-7.5wt% Zr 합금을 사용하여 알루미나와 304 스테인레스강을 활성브레이징법으로 접합하였을 때 두 접합체 계면의 반응층생성구조를 비교조사하여 다으모가 같은 결과를 얻었다. Cu-10tw% Ti삽입금속을 사용한 접합체의 알루미나쪽 반응층은 단층구조를 이루고 있었으나 Cu-7.5wt% Zr삽입금속을 사용한 경우 반응층은 이중구조를 이루고 있었다. 이는 두 종류의 서로 다른 삽입금속이 용융상태에서 알루미나 표면에 갖는 젖음성(wettability)차이에 기인하는 것으로 사료되며 이러한 반응층의 생성구조는 접합강도에 지대한 영향을 미치는 것으로 확인되었다. Cu-10wt% Ti 삽입금속을 사용한 경우 모든 접합조건에서 열응력에 의한 모서리 균열(dege crack)이 관찰되었으나 Cu-7.5wt% Zr 삽입금속을 사용한 경우 적정 접합조건을 선정하면 반응층의 이중구조를 통애 열응력을 완화시킴으로써 균열발생을 억제하여 1323K $\times$ 0.6Ks의 접합조건에서 비교적 높은 약 86MPa의 전단강도값을 얻을 수 있었다.