• 한국세라믹학회지
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• 제39권3호
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• pp.321-326
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• 2002

착체중합법을 사용하여 nano-size의 ZnWO$_4$ powder를 제조하였다. 금속이온물질로서 znic nitrate와 tungstic acid를 사용하였으며 용매는 ethylene glycol을 사용하였다. 300$^{\circ}$C부터 600$^{\circ}$C의 온도 영역에서 하소한 분말에 대해 열분해 및 결정화 과정, 분말의 형상, 입도 변화 양상을 분석하였다. 일반적인 고상합성시에 필요한 온도보다 현저히 낮은 온도인 400$^{\circ}$C에서 ZnWO$_4$상이 생성되었으며, 600$^{\circ}$C에서 완전한 경정상을 얻을 수 있었다. 합성된 분말은 400$^{\circ}$C와 500$^{\circ}$C에서 원형과 silk-worm 형태가 혼합된 입자 형상을 나타내었고, 600$^{\circ}$C에서보다 균질한 양상을 나타내었다. 합성된 분말의 입자 크기는 400$^{\circ}$C∼600$^{\circ}$C의 온도영역에서 19.9∼24.2nm 정도로 매우 미세하였으며, 하소 온도가 증가함에 따라 분말의 결정상과 입도가 증가하는 것을 확인하였다.

• 한국결정성장학회지
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• 제12권3호
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• pp.133-137
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• 2002

착체중합법을 사용하여 nano-size의 $ZnWO_4$ powder를 저온에서 합성하였다. 금속이온물질로서 zinc acetate와 tungstic acid를 사용하였으며 용매는 de-ionized water를 사용하였다. $300^{\circ}C$ 부터 $600^{\circ}C$의 온도 영역에서 하소한 분말에 대해 열분해 및 결정화 과정, 분말의 형상, 입도 변화 양상을 분석하였다. 일반적인 고상합성 시에 필요한 온도보다 현저히 낮은 온도인 $400^{\circ}C$에서 $ZnWO_4$상이 생성되었으며, $600^{\circ}C$에서 완전한 결정상을 얻을 수 있었다. 합성된 분말은 $400^{\circ}C$에서 원형과 silk-worm 형태가 혼합된 입자 형상을 나타내었고 $500^{\circ}C$에서 보다 균질한 양상을 나타내었다. 합성된 분말의 입자 크기는 $400^{\circ}C$~$600^{\circ}C$의 온도영역에서 17.62~24.71 nm 정도로 매우 미세하였으며, 하소 온도가 증가함에 따라 분말의 결정상과 입도가 증가하는 것을 확인하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.401-404
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• 1997

We prepared 0~20mo1% WO$_3$added ZnO composite ceramics in order to promote a CO gas sensitivity. Using SE,. we observed the microstructure of sample. The resistances of sample were measured by High Voltage Measure/source Unit in the temperature range of +5V~-5V. The measured 1000ppm CO sensitivities of pure ZnO were about 1~4.3, and the measured 1000ppm CO sensitivities of ZnO-WO$_3$composite ceramics were about 1~8.2. Therefore, the 1000ppm CO sensitivities of ZnO-WO$_3$composite ceramics were about 2 times larger than that of pure ZnO.

• 한국세라믹학회지
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• 제27권4호
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• pp.447-456
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• 1990

ZnWO4 single crystals were grown by Czochralski method. And the orientation of grown crystals were determined by Laue back reflection, and the crystals were siliced at (100), (010), (001) face before polishing. The morphologys and distribution of etch pits on each face were observed by optical microscopy. In the present study, we understood that dislocation distributjioon rely on shape of solid-liquid interface, and secondary phase acts on the dislocation source. We also observed dislocation trace(etch pits) of (100) slip plane on (010) cleavage plane.

• 한국결정성장학회지
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• 제20권5호
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• pp.197-201
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• 2010

$ZnWO_4$ nanocrystallines were prepared from polymeric complex method using microwave irradiation. The average nanocrystalline sizes were 18~25 nm showing an ordinary tendency to increase with the temperatures from 400 to $600^{\circ}C$. Bulk type single crystals of $ZnWO_4$ were grown successfully in the [100], [010] and [001] directions using the Czochralski method. The effect of the growth parameters, such as the rotation speed, pulling rate and diameter of the grown crystals, were examined. The hardness, thermal expansion coefficients and dielectric constants of the crystals were evaluated.

• 한국전기전자재료학회논문지
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• 제16권5호
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• pp.397-403
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• 2003

Microwave dielectric properties of (1-x)ZnW $O_4$-xTi $O_2$ ceramic systems were investigated with calcination temperatures and Ti $O_2$ contents. The ZnW $O_4$ ceramic could be suitably sintered at 1075$^{\circ}C$ and showed the dielectric constant of 13.6, quality factor(Q$\times$ $f_{O}$value) of 22,000 and temperature coefficient of resonant frequency($\tau$$_{f}$) of -65$\pm$2ppm/$^{\circ}C$. Increasing the amount of Ti $O_2$ in the range of 0.25 to 0.45 mol, the dielectric constant and $\tau$$_{f}$ increased due to the role of Ti $O_2$ but the quality factor decreased due to the increase of phase boundaries. The 0.7ZnW $O_4$-0.3Ti $O_2$ ceramic showed the dielectric constant of 19.8, qualify factor(Q$\times$ $f_{0}$) of 20,000 and $\tau$$_{f}$ of -3$\pm$1ppm/$^{\circ}C$.>.EX>.>.>.

• 한국결정성장학회지
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• 제20권6호
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• pp.295-300
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• 2010

Metathetic route for the $MWO_4$ (M=Zn, Co) particles is a simple method of synthesis and a viable alternative method in a short time. $MWO_4$ (M=Zn, Co) particles were synthesized using solid-state metathetic (SSM) method with microwave irradiation. The $MWO_4$ (M=Zn, Co) particles were formed completely at $600^{\circ}C$ for 3 h. The crystallization process, thermal decomposition and morphology of the $MWO_4$(M= Zn, Co) particles were evaluated. The characteristics of the SSM reaction and the formation of a high lattice energy by-product NaCl were discussed.

• 대한화학회지
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• 제42권4호
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• pp.13-482
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• 1998

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 추계학술대회 논문집
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• pp.275-279
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• 1998

The influence of $WO_3$ (0.5-4.0mol%) on the microstructural and electrical properties of ZnO varistors was investigated. The major part of a tungsten segregated to the nodal point. SEM, EDAX, and XRD analysis revealed that three phase, such as W-rich phase, Bi-rich phase, and spinel phase, coexist at the nodal point. The average grain size increased in the range of 15.5-29.9pm with increasing $WO_3$ content. This may be probably attributed to liquid phase formed by $WO_3$, $WO_3$ acted as promotion additive of grain growth. As $WO_3$ content increase, the varistor voltage greatly decreased in the range 186.82-35.87V/mm due to the increase of grain growth. The barrier height decreased in the range 1.93-0.42eV with increasing $WO_3$content.

• 한국전기전자재료학회논문지
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• 제19권9호
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• pp.855-861
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• 2006

Sinterability and microwave dielectric properties of $xZWO_{4}-(1-x)TiO_{2}$ ceramic systems with zinc-borosilicate glass and $TiO_{2}$ contents for LTCC(Low Temperature Co-fired Ceramics) were investigated. The addition of $3{\sim}10\;wt%$ ZBS glass ensured the sinterability below $900^{\circ}C$. In general, increasing ZBS glass content seemed to enhance the sinterability, but the quality factor($Qxf_{0}$) significantly decreased due to the formation of an excessive liquid and second phases. As for the addition of $TiO_{2}$, the dielectric constant(${\varepsilon}_{r}$) and temperature coefficient of resonant frequency(${\tau}_{f}$) showed to increase, while the quality factor($Qxf_{0}$) did not show an apparent change. The composition of $0.7xZnWO_{4}-0.3TiO_{2}$ ceramics sintered at $900^{\circ}C$ with 5 wt% ZBS glass demonstrated 21.6 in dielectric constant(${\varepsilon}_{r}$), 14,800 in quality factor($Qxf_{0}$), and $+5\;ppm/^{\circ}C$ in temperature coefficient of resonant frequency(${\tau}_{f}$).