• Journal of Advanced Marine Engineering and Technology
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• v.27 no.1
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• pp.33-41
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• 2003

The optical properties of $ZnS_ySe_{1-\chi-y}:Te_{\chi}(\chi<0.08,y~0.11)$ alloys grown by molecular beam epitaxy (MBE) have been investigated by photoluminescence (PL) and PL-excitation (PLE) spectroscopy. Good optical properties and high crystal quality were established with lattice match condition to GaAs substrate. At room temperature, emission in the visible spectrum region from blue to green was obtained by varying the Te content of the ZnSSe:Te alloy. The efficient blue and green emission were assigned to $Te_1 and Te_n(n\geq2)$cluster bound excitons, respectively. Bright green (535 nm) and blue (462 nm) light emitting diodes (LEDs) have been developed using ZnSSe:Te system as an active layer. The turn-on voltage of 2.1 V in current-voltage characteristics is very small compared to that of commercial InGaN-based LEDs (>3.4 V), indicating the formation of a good ohmic contact due to the optimized p-ZnSe/p-ZnTe multi-quantum well (MQW) superlattice electrode layers.

• Journal of Advanced Marine Engineering and Technology
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• v.34 no.7
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• pp.991-996
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• 2010

Blue-green and green LEDs have been successfully fabricated grown by MBE, which has introduced the $ZnS_ySe_{1-x-y}:Te_x$ (x=0.04, y~0.11-0.14) ternary epilayer as an active layer. From the I-V characteristics, the built-in voltage (~2.1 V) is very small compared to other wide bandgap LEDs, such as commercial InGaN-based LEDs (>3.2 V). From the C-V profiling, the effective carrier concentration in the p-type ZnMgSSe cladding layer was evaluated as ${\sim}2.8{\times}10^{16}\;cm^{-3}$ for the present LEDs.

• Journal of Advanced Marine Engineering and Technology
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• v.29 no.7
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• pp.795-800
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• 2005

The optical properties of $ZnS_{y}Se_{1-x-y}:Te_x\;(x\;<\;0.08,\;y\∼0.11$) alloys grown by molecular beam epitaxy (MBE) have been investigated by photoluminescence (PL) and PL-excitation (PLE) spectroscopy. Good optical properties and high crystal quality were established with lattice match condition to GaAs substrate. At room temperature, emission in the visible spectrum region from blue to green was obtained by varying the Te content of the ZnSSe:Te alloy. The efficient blue and green emission were assigned to $Te_{1}$Tel and $Te_{n}$ (n$\geq$2) cluster bound excitons, respectively. Bright blue (462 nm) and green (535 nm) light emitting diodes (LEDs) have been developed using ZnSSe:Te system as an active layer.

• Proceedings of the Korean Society of Marine Engineers Conference
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• 2002.05a
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• pp.167-171
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• 2002

We have investigated the optical properties of Te-doped ZnSSe:Te epitaxial layers grown on (100) GaAs substrates by molecular beam epitaxy. The Te-doped ternary specimen shows strong blue or green emission (at 300k) which is assigned to Te$_{1}$ or Te$_{n}$( n$\geq$2) cluster bound exciton. Bright green and blue light-emitting diodes (LEDs) have been developed using ZnSSe:Te system as an active layer. The green LEDs exhibit a fairly long device lifetime (>2000 h) when operated at 3 A/cm$^{2}$ under CW condition at room temperature. It is confirmed that the Te-doping induced "crystal-hardening effect" plays a significant role in both efficient and strong suppression of the optical device degradation.gradation.

• Proceedings of the Korean Society of Marine Engineers Conference
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• 2005.11a
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• pp.51-52
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• 2005

Optical characteristics of excitonic blue and green emission of Te-doped ZnSSe:Te epitaxial layers, grown by molecular beam epitaxy, were investigated by photoluminescence (PL) measurements. The Te-doped ternary specimen shows strong blue or green emission (at 300K) which is assigned to $Te_1$ or $Te_n$ $(n{\geq}2)$ cluster cluster bound exciton, respectively. Bright green and blue light emitting diodes (LEDs) have been developed using ZnSSe:Te system as an active layer. The green LEDs exhibit a fairly long device lifetime (>2000 h) when operated at 3 $A/cm^2$ under CW condition at room temperature.