• Title/Summary/Keyword: ZnS$_{}$ x/Se$_{}$ 1-x/

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RF Magnetron Spurrering법으로 증착한 IGZO 박막의 특성과 IGZO TFT의 전기적 특성에 미치는 RF Power의 영향

  • Jung, Yeon-Hoo;Kim, Se-Yun;Jo, Kwang-Min;Lee, Joon-Hyung;Kim, Jeong-Joo;Heo, Young-Woo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.340.2-340.2
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    • 2014
  • 최근 비정질 산화물 반도체는 가시광 영역에서의 투명도와 낮은 공정 온도, 그리고 높은 Field-effect mobility로 인해 Thin film transistors의 Active channel layer의 재료로 각광 받고 있다. ZnO, IZO, IGO, ITGO등의 많은 산화물 반도체들이 TFT의 채널층으로의 적용을 위해 활발히 연구되고 있으며, 특히 비정질 IGZO는 비정질임에도 불구하고 Mobility가 $10cm^2/Vs$ 정도로 기존의 a-Si:H 보다 높은 Mobility 특성을 나타내고 있어 대화면 디스플레이와 고속 구동을 위한 LCD에 적용 할 수 있으며 또한 낮은 공정 온도로 인해 플렉서블 디스플레이에 응용될 수 있다는 장점이 있다. 우리는 RF magnetron sputtering법으로 증착한 비정질 IGZO TFT(Thin Film Transistors)의 전기적 특성과 IGZO 박막의 특성에 미치는 RF power의 영향을 연구하였다. 제작한 TFTs의 Active channel layer는 산소분압 1%, Room temperature에서 RF power별(50~150 W)로 Si wafer 기판 위에 30nm로 증착 하였고 100 nm의 $SiO_2$가 절연체로 사용되었다. 또한 박막 특성을 분석하기 위해 같은 Chamber 분위기에서 100 nm로 IGZO 박막을 증착하였다. 비정질 IGZO 박막의 X-ray reflectivity(XRR)을 분석한 결과 RF Power가 50 W에서 150 W로 증가 할수록 박막의 Roughness는 22.7 (${\AA}$)에서 6.5 (${\AA}$)로 감소하고 Density는 5.9 ($g/cm^3$)에서 6.1 ($g/cm^3$)까지 증가하는 경향을 보였다. 또한 제작한 IGZO TFTs는 증착 RF Power가 증가함에 따라 Threshold voltage (VTH)가 0.3~4(V)로 증가하는 경향을 나타내고 Filed-effect mobility도 6.2~19 ($cm^2/Vs$)까지 증가하는 경향을 보인다. 또한 on/off ratio는 모두 > $10^6$의 값을 나타내며 subthreshold slope (SS)는 0.3~0.8 (V/decade)의 값을 나타낸다.

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Design Anamorphic Lens Thermal Optical System that Focal Length Ratio is 3:1 (초점거리 비가 3:1인 아나모픽 렌즈 열상 광학계 설계)

  • Kim, Se-Jin;Ko, Jung-Hui;Lim, Hyeon-Seon
    • Journal of Korean Ophthalmic Optics Society
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    • v.16 no.4
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    • pp.409-415
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    • 2011
  • Purpose: To design applied anamorphic lens that focal length ratio is 3:1 optical system to improve detecting distance. Methods: We defined a boundary condition as $50^{\circ}{\sim}60^{\circ}$ for viewing angle, horizontal direction 36mm, vertical direction 12 mm for focal length, f-number 4, $15{\mu}m{\times}15{\mu}m$ for pixel size and limit resolution 25% in 33l p/mm. Si, ZnS and ZnSe as a materials were used and 4.8 ${\mu}m$, 4.2 ${\mu}m$, 3.7 ${\mu}m$ as a wavelength were set. optical performance with detection distance, narcissus and athermalization in designed camera were analyzed. Results: F-number 4, y direction 12 mm and x direction 36 mm for focal length of the thermal optical system were satisfied. Total length of the system was 76 mm so that an overall volume of the system was reduced. Astigmatism and spherical aberration was within ${\pm}$0.10 which was less than 2 pixel size. Distortion was within 10% so there was no matter to use as a thermal optical camera. MTF performance for the system was over 25% from 33l p/mm to full field so it was satisfied with the boundary condition. Designed optical system was able to detect up to 2.9 km and reduce a diffused image by decreasing a narcissus value from all surfaces except the 4th surface. From sensitivity analysis, MTF resolution was increased on changing temperature with the 5th lens which was assumed as compensation. Conclusions: Designed optical system which used anamorphic lens was satisfied with boundary condition. an increasing resolution with temperature, longer detecting distance and decreasing of narcissus were verified.

Structural and Electrical Properties of Fluorine-doped Zinc Tin Oxide Thin Films Prepared by Radio-Frequency Magnetron Sputtering

  • Pandey, Rina;Cho, Se Hee;Hwang, Do Kyung;Choi, Won Kook
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.335-335
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    • 2014
  • Over the past several years, transparent conducting oxides have been extensively studied in order to replace indium tin oxide (ITO). Here we report on fluorine doped zinc tin oxide (FZTO) films deposited on glass substrates by radio-frequency (RF) magnetron sputtering using a 30 wt% ZnO with 70 wt% SnO2 ceramic targets. The F-doping was carried out by introducing a mixed gas of pure Ar, CF4, and O2 forming gas into the sputtering chamber while sputtering ZTO target. Annealing temperature affects the structural, electrical and optical properties of FZTO thin films. All the as-deposited FZTO films grown at room temperature are found to be amorphous because of the immiscibility of SnO2 and ZnO. Even after the as-deposited FZTO films were annealed from $300{\sim}500^{\circ}C$, there were no significant changes. However, when the sample is annealed temperature up to $600^{\circ}C$, two distinct diffraction peaks appear in XRD spectra at $2{\Theta}=34.0^{\circ}$ and $52.02^{\circ}$, respectively, which correspond to the (101) and (211) planes of rutile phase SnO2. FZTO thin film annealed at $600^{\circ}C$ resulted in decrease of resistivity $5.47{\times}10^{-3}{\Omega}cm$, carrier concentration ~1019 cm-3, mobility~20 cm2 V-1s-1 and increase of optical band gap from 3.41 to 3.60 eV with increasing the annealing temperatures and well explained by Burstein-Moss effect. Change of work function with the annealing temperature was obtained by ultraviolet photoemission spectroscopy. The increase of annealing temperature leads to increase of work function from ${\phi}=3.80eV$ (as-deposited FZTO) to ${\phi}=4.10eV$ ($600^{\circ}C$ annealed FZTO) which are quite smaller than 4.62 eV for Al-ZnO and 4.74 eV for SnO2. Through X-ray photoelectron spectroscopy, incorporation of F atoms was found at around the binding energy of 684.28 eV in the as-deposited and annealed FZTO up to 400oC, but can't be observed in the annealed FZTO at 500oC. This result indicates that F atoms in FZTO films are loosely bound or probably located in the interstitial sites instead of substitutional sites and thus easily diffused into the vacuum from the films by thermal annealing. The optical transmittance of FZTO films was higher than 80% in all specimens and 2-3% higher than ZTO films. FZTO is a possible potential transparent conducting oxide (TCO) alternative for application in optoelectronics.

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Size-resolved Source Apportionment of Ambient Particles by Positive Matrix Factorization at Gosan, Jeju Island during ACE-Asia (PMF 분석을 이용한 ACE-Asia 측정기간 중 제주 고산지역 입자상 물질의 입경별 발생원 추정)

  • Moon K.J.;Han, J.S.;Kong, B.J.;Jung, I.R.;Cliff Steven S.;Cahill Thomas A.;Perry Kelvin D.
    • Journal of Korean Society for Atmospheric Environment
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    • v.22 no.5
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    • pp.590-603
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    • 2006
  • Size-and time-resolved aerosol samples were collected using an eight-stage Davis rotating unit for monitoring (DRUM) sampler from 23 March to 29 April 2001 at Gosan, Jeju Island, Korea, which is one of the super sites of Asia-Pacific Regional Aerosol Characterization Experiment(ACE-Asia). These samples were analyzed using synchrotron X-ray fluorescence for 3-hr average concentrations of 19 elements including Al, Si, S, Cl, K, Ca, Ti, V, Cr, Mn, Fe, Ni, Cu, Zn, As, Se, Br, Rb, and Pb. The size-resolved data sets were then analyzed using the positive matrix factorization(PMF) technique to identify possible sources and estimate their contributions to particulate matter mass. PMF analysis uses the uncertainty of the measured data to provide an optimal weighting. Twelve sources were resolved in eight size ranges($0.09{\sim}12{\mu}m$) and included continental soil, local soil, sea salt, biomass/biofuel burning, coal combustion, oil combustion, municipal incineration, nonferrous metal source, ferrous metal source, gasoline vehicle, diesel vehicle, and volcanic emission. The PMF result of size-resolved source contributions showed that natural sources represented by local soil, sea salt, continental soil, and volcanic emission contributed about 79% to the predicted primary particulate matter(PM) mass in the coarse size range ($1.15{\sim}12{\mu}m$) while anthropogenic sources such as coal combustion and biomass/biofuel burning contributed about 58% in the fine size range($0.56{\sim}2.5{\mu}m$). The diesel vehicle source contributed mostly in ultra-fine size range($0.09{\sim}0.56{\mu}m$) and was responsible for about 56% of the primary PM mass.