• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.11
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• pp.926-931
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• 2000

The microwave dielectric properties and the microstructures as a mole fraction of (1-x)ZnNb$_2$O$_{6}$-xPb$_{5}$Nb$_4$O$_{15}$ ceramics with CuV$_2$O$_{6}$, Sb$_2$O$_3$ and glass(ZNPN ceramics) was investigated. 0.98ZN-0.02PN ceramics containing 1.5 wt% CuV$_2$O$_{6}$ 1.0 wt% Sb$_2$O$_3$ and 1.0 wt% glass had a dielectric constant($\varepsilon$$_{r}$) of 23, Qxf$_{o}$ value of 15000 and TCF(Temperature Coefficient of resonance Frequency) of -25 ppm/$^{\circ}C$ and it is possible to be co-fired with Ag electrode at 90$0^{\circ}C$. As sintered temperature increases over 90$0^{\circ}C$ the grain size of ZNPN ceramics was increasing for growth and it has poor co-fired properties with Ag electrode.e.ctrode.e.e.

• Proceedings of the KIEE Conference
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• 2003.10a
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• pp.101-103
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• 2003

The $ZnNb_2O_6$ ceramics with 5wt% CuO and $B_2O_3$(1,3,5wt%) were prepared by the conventional mixed oxide method. The ceramics were sintered at the temperature of $950^{\circ}C{\sim}1025^{\circ}C$ for 3hr. in air. The structural properties were investigated with sintering temperature and $B_2O_3$ addition by XRD and SEM. Also, the microwave dielectric properties were investigated with sintering temperature and $B_2O_3$ addition. Increasing the sintering temperature, the peak of second phase ($Cu_3Nb_2O_6$) was increased. But no significant difference was observed as the $B_2O_3$ addition, In the $ZnNb_2O_6$ ceramics with 5wt% CuO and 5wt% $B_2O_3$ sintered at $975^{\circ}C$ for 3hr, the dielectric constant, quality factor, temperature coefficient of the resonant frequency were 19.30, 14,662GHz, $+4.18ppm/^{\circ}C$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.342-342
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• 2008

The low temperature sintering and microwave dielectric properties of ceramic/glass composites which were composed of ceramics in the $Bi_2(Zn_{1/3}Nb_{2/3})_2O_7$ and zinc borosilicate glass/bismuth-zinc borosilicate glass were investigated with a view to applying the microwave dielectrics to low temperature co-fired ceramics. The $Bi_2(Zn_{1/3}Nb_{2/3})_2O_7$ addition of 5 wt% ZBS and BZBS glass ensured a successful sintering below $900^{\circ}C$. In addition, pyrochlore phase was observed in the all composition. $Bi_2(Zn_{1/3}Nb_{2/3})_2O_7$ with 5 wt% BZBS glasss demonstrated 70 as the dielectric constant ($\varepsilon_r$), 2,500 GHz as the Q$\times$f value, and -40 ppm/$^{\circ}C$ as TCF.

• Journal of the Korean Ceramic Society
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• v.30 no.11
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• pp.925-932
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• 1993

The perovskite phase in PZN-PMN-PT (Pb(Zn, Mg)1/3Nb2/3O3-PbTiO3) pseudoternary ceramics was stabilized by the addition of excess constituent divalent oxides (PbO, MgO and ZnO). The excess addition of 5mol% MgO or 7.5mol% PbO fully stabilized the perovskite phase. The enhanced diffuse phase transition (DPT) and the decrease in the electrical resistivity observed in the presence of excess ZnO or MgO were interpreted in terms of the additional formation of negatively charged, short-range ordered 1:1 domains with a concomitant generation of charge carriers, holes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.320-321
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• 2005

The $ZnNb_2O_6$ ceramics with 5wt% CuO and 5wt% $B_2O_3$ were prepared by the conventional mixed oxide method. The ceramics were sintered at the temperature of $950^{\circ}C\sim1025^{\circ}C$ for 3hr. in air. The structural properties were investigated with sintering temperature by XRD and SEM. Also, the microwave dielectric properties were investigated with sintering temperature. Increasing the sintering temperature, the peak of second phase ($Cu_3Nb_2O_8$) was increased. But no significant difference was observed as sintering temperature. In the $ZnNb_2O_6$ ceramics with 5wt% CuO and 5wt% $B_2O_3$ sintered at $975^{\circ}C$ for 3hr, the dielectric constant, quality factor and temperature coefficient of the resonant frequency were 19.30, 14,662GHz, +4.1$8ppm/^{\circ}C$, respectively.

• Journal of the Korean Ceramic Society
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• v.40 no.4
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• pp.346-349
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• 2003

Microwave dielectric characteristics and physical properties of the new Zr$_{1-x}$ (Bn$_{1}$3/Nb$_{2/3}$)xTi $O_4$ (0.2$\leq$x$\geq$ 1.0) system have been investigated as a function of the amount of Bn$_{1}$3/Nb$_{2/3}$ $O_2$substitution. With increasing Bn$_{1}$3/Nb$_{2/3}$ $O_2$ content (x), two phase regions were observed: $\alpha$-Pb $O_2$ solid solution (x<0.4), mixture of the rutile type Zn$_{1}$3/Nb$_{2/3}$Ti $O_4$ and the $\alpha$-Pb $O_2$ solid solution (x$\geq$0.4). In the$\alpha$-Pb $O_2$solid solution region below x<0.4, the Q.f$_{0}$ value sharply increased and the Temperature Coefficient of the Resonant Frequency(TCF) decreased with increasing Bn$_{1}$3/Nb$_{2/3}$ $O_2$ contents while dielectric constant (K) showed nearly same value. In the mixture region above x$\geq$4, the dielectric constant and TCF increased with increasing Bn$_{1}$3/Nb$_{2/3}$ $O_2$ content. Zr$_{1-x}$ (Zn$_{1}$3/Nb$_{2/3}$)xTi $O_4$ materials have excellent microwave dielectric properties with K=44.0, Q.f$_{0}$ : 41000 GHz and TCF =-3.0 ppm/$^{\circ}C$ at x=0.35.=0.35. x=0.35.=0.35.

• 한국신재생에너지학회:학술대회논문집
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• 2007.06a
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• pp.350-350
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• 2007

• The Transactions of the Korean Institute of Electrical Engineers
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• v.44 no.8
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• pp.1068-1074
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• 1995

Effect of (Zn$_{1}$3/Nb$_{2}$3/) $O_{2}$ addition on the phase changes and microwave dielectric properties of BaTi $O_{3}$-3Ti $O_{2}$ ceramics were investigated. Addition of (Zn$_{1}$3/Nb$_{2}$3/) $O_{2}$ to BaTi $O_{3}$-3Ti $O_{2}$ resulted in the formation of Ba $Ti_{4}$$O_{9}$, $Ba_{2}$ $Ti_{9}$ $O_{20}$, Ba(Zn$_{1}$3/Nb$_{2}$3/) $O_{3}$, and Ti $O_{2}$ phases. Ba $Ti_{4}$$O_{9}$ phase was gradually transformed to $Ba_{2}$ $Ti_{9}$ $O_{20}$. This was identified by XRD and microstructure. As the Ba $Ti_{4}$$O_{9}$ phase transformed to $Ba_{2}$ $Ti_{9}$ $O_{20}$ phase, the dielectric constant increased to 37.5. Q*f$_{o}$ value was 40000 at x=0.04, and the temperature coefficient of resonant frequency was +10ppm/.deg. C.C.. C.C.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.1
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• pp.50-55
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• 2002

$Nd_2O_3$0.2~0.5 wt.% doped $LiNbO_3$single crystals were grown by the Czochralski method. The ZnO doping by 2~8 mole% can improve the resistance of optical damage. In this study, Nd : LiNbO$_3$ single crystals with the periodical domain structure were obtained by CZ method.

• Transactions on Electrical and Electronic Materials
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• v.14 no.4
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• pp.193-198
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• 2013

The effects of additives (Cr, Nb, Dy, and Bi) on microstructure, electrical properties, dielectric characteristics, and aging behavior of $ZnO-V_2O_5-MnO_2-Co_3O_4-La_2O_3$ (ZVMCL) ceramics were systematically investigated. The phase formed in common for all ZVMCL ceramics modified with various additives consisted of ZnO grain as a main phase, and $Zn_3(VO_4)_2$ and $ZnV_2O_4$ as the secondary phases. The sintered density and average grain size were in the range of $5.4-5.54g/cm^3$ and $3.7-5.1{\mu}m$, respectively. The ZVMCL ceramics modified with Cr exhibited the highest breakdown field (6,386 V/cm) and the ZVMCL ceramics modified with Nb exhibited the lowest breakdown field (3,517 V/cm). All additives enhanced the nonlinear coefficient (${\alpha}$), by a small or large margin, in particular, additives such as Bi and Nb noticeably increased the nonlinear coefficient, with ${\alpha}=25.5$ and ${\alpha}=23$, respectively. However, on the whole, all additives did not improve the stability against a DC stress, compared with ZVMCL ceramics.