• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.355-356
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• 2008

In this work, ZnO films doped with different contents of Indium (0.1at.%, 0.3at.%, 0.6at.%, respectively) were deposited on Si (111) substrate that has 1~20 $\Omega$cm by pulsed laser deposition (PLD) at $600^{\circ}C$ for 30min. The thickness of the films are about 250 nm. The structural, optical and electrical properties of the films were investigated using X-ray Diffraction (XRD), Atomic force microscope (AFM), Photoluminescence (PL) and Hall measurement. It has been found that RMS of the films is decreased and grain size is increased with increasing the contents of doped Indium. The results of the Photoluminescence properties were indicated that the films have UV emission about 380nm and shows a little red shitf with increasing contents of doped indium. The result of the Hall measurement shows that the concentration and resisitivity in doped ZnO are as changing as one order, respectively ${\sim}10^{18}/cm^2$, ${\sim}10^{-2}cm{\Omega}cm$.

• 한국전기전자재료학회논문지
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• 제20권11호
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• pp.932-938
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• 2007

The structural, optical, and electrical properties of ZnO thin films grown on glass by radio-frequency (rf) magnetron sputtering were investigated. The mixture flow ratio of $O_2$ to Ar, which was operated with sputtering gas, was chosen as a parameter for growing high-qualify ZnO thin films. The structural properties and surface morphologies of the thin films were characterized by the X-ray diffraction and the atomic force microscope, respectively. As for the optical properties of the films, the optical absorbance was measured in the wavelength range of 300-1100 nm by using UV-VIS spectrophotometer. The optical transmittance, absorption coefficient, and optical bandgap energy of ZnO thin films were calculated from the measured data. The crystallinity of the films was improved and the bandgap energy was increased from 3.08 eV to 3.23 eV as the oxygen flow ratio was increased from 0 % to 50 %. Furthermore, The ultraviolet and violet luminescences were observed by using photoluminescence spectroscopy. The hall mobility was decreased with the increase of oxygen flow ratio.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2012년도 춘계학술발표회 논문집
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• pp.211-212
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• 2012

ZnO submicron particles were grown on Au-catalyzed Si substrate by a vapor phase transport (VPT) growth process under different mixture gas ratio at growth temperature of $900^{\circ}C$. The structural and optical properties of the ZnO submicron particles were investigated by field-emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), and photoluminescence (PL). The ZnO submicron particles could be clustered with the $O_2/Ar$ mixture gas ratio(%) higher than 10%, and it was mainly determined by the gas ambient. Particularly, when the $O_2/Ar$ mixture gas ratio was 30%, it was observed the ZnO submicron particles with diameters in the range of 125 to 500 nm and the narrowest full width at half maximum (FWHM) of XRD and PL spectra with $0.121^{\circ}$ and 92 meV, respectively. It was found that the structural and optical properties of the ZnO submicron particles were improved with increasing the $O_2/Ar$ mixture gas ratio through the XRD and PL spectra.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.352.2-352.2
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• 2016

In recent times, much effort has been concentrated on trivalent rare-earth ions activated ceramics or oxide phosphors to develop display industries due to their promising applications in optoelectronic devices and field-emission displays. To prepare efficient phosphors, citrate sol-gel method is one of the best synthetic methods. Green and blue emissive CaLa2ZnO5:RE3+ nanocrystalline materials are synthesized by a citrate sol-gel method. After the samples annealing at $1100^{\circ}C$, morphological and structural properties are investigated by scanning electron microscope images and X-ray diffraction patterns, respectively. At low electron beam voltage of <5 kV, the visible photoluminescence properties are obtained. Various concentrations of the RE3+ ions exhibited their characteristic emission peaks at different excitation wavelengths, respectively. Similarly, at high electron beam anodic voltage, the cathodoluminescence properties are studied as a function of acceleration voltage and filament current. The chromaticity coordinates are calculated for the optimized CaLa2ZnO5 nanocrystalline luminescent materials.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2012년도 추계총회 및 학술대회 논문집
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• pp.131-133
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• 2012

The photoluminescence (PT) properties of Al-doped ZnO thin films grown by the sol-gel dip-coating method have been investigated. At 12 K, nine distinct PL peaks were observed at 2.037, 2.592, 2.832, 3.027, 3.177, 3.216, 3.260, 3.303, and 3.354 eV. The deep-level emissions (2.037, 2.592, 2.832, and 3.027 eV) were attributed to native defects. The near-band-edge (NBE) emission peaks at 3.354, 3.303, 3.260, 3.216, and 3.177 eV were attributed to the emission of the neutral-donor-bound excitons (D0X), two-electron satellite (TES), free-to-neutral-acceptors (e,A0), donor-acceptor pairs (DAP), and second-order longitudinal optical (2LO) phonon replicas of the TES (TES-2LO), respectively. According to Haynes' empirical rule, we calculated the energy of a free exciton (FX) to be 3.374 eV. The thermal activation energy for D0X in the nanocrystalline ZnO thin film was found to be ~25 meV, corresponding to the thermal dissociation energy required for D0X transitions.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.1083-1086
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• 2004

We applied the spray pyrolysis technique to prepare Mn-doped $BaMgAl_{10}O_{17}$ (BAM) particles with high photoluminescence, which could be used in the plasma display device as a green phosphor. Several preparation conditions were investigated in order to tail the vacuum ultraviolet (VUV) characteristics. Some portions of barium were replaced with strontium to improve the luminescent intensity of BAM:Mn particles under VUV excitation. The content of Mn and Sr was optimized to obtain high luminescent efficiency under VUV excitation. Finally, the optimized BAM:Mn green particles showed higher photoluminescence intensity than that of commercial $Zn_2SiO_4$ and comparable with commercial barium-aluminate phosphor.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.207-210
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• 2005

In order to investigate the influence of the homo buffer layer on the microstructure of the ZnO thin film, undoped ZnO buffer layer were deposited on sapphire (0001) substrates by ultra high vaccum pulsed laser deposition (UHV-PLD) and molecular beam eiptaxy (MBE). After high temperature annealing at $600^{\circ}C$ for 30min, undoped ZnO buffer layer was deposited with various oxygen pressure (35~350mtorr). On the grown layer of undoped ZnO, Arsenic-doped(l, 3wt%) ZnO layers were deposited by UHV-PLD. The optical property of the ZnO was analyzed by the photoluminescence (PL) measurement. From $\Theta-2\Theta$ XRD analysis, all the films showed strong (0002) diffraction peak, and this indicates that the grains grew uniformly with the c-axis perpendicular to the substrate surface. Field emission scanning electron microscope (FE-SEM) revealed that microstructures of the ZnO were varied with oxygen pressure, arsenic doping level, and the deposition method of undoped ZnO buffer layers. The films became denser and smoother in the cases of introducing MBE-buffer layer and lower oxygen pressure during As-doped ZnO deposition. Higher As-doping concentration enhanced the columnar-character of the films.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2005년도 춘계종합학술대회
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• pp.1026-1029
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• 2005

Grating 이 형성된 SiO$_2$ 기판상에 ZnO 박막을 graphoepitaxy 법으로 형성시킬 것을 제안하고 그 가능성을 고찰하였다. Si(100) 기판상에 노광작업(photolithograpy)을 이용하여 요철구조를 형성시킨 다음 자연산화를 시켜서 SiO$_2$ 기판을 제작하였고, 제작된 요철구조 위에 열증착 법으로 Zn 를 증착 시킨 후 이를 산화 시켜서 ZnO 박막을 형성 시켰다. 또한 열처리에 의한 결정성의 변화를 관찰하기 위하여 700 ${\sim}$ 900 $^{\circ}C$에서 열처리를 하였다. 제작된 시료는 Atomic Force Microscopy (AFM)로 표면을 관찰하였으며, Photoluminescence (PL) 을 이용하여 결정성의 변화를 관찰하였다.

• Bulletin of the Korean Chemical Society
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• 제20권9호
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• pp.1035-1039
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• 1999

Manganese-activated zincgallate (Zn1-xMnxGa2O4) phosphor as a green phosphor was readily prepared by coprecipitation in aqueous basic solution of metal salts. The obtained product converted to amorphous zincgallate even at 300℃, followed by crystallization at 1000 ℃. The pyrolyzed phosphor showed fine particle, then reduction treatment at 900 ℃ changed into homogeneous shape with slight grain growth(particle size less than 0.5 mm). The photoluminescence characteristics of the zincgallates have been investigated as a function of dopant concentrations, reducing atmospheres and temperatures. Under UV excitation the phosphors displayed the highest green emission efficiency at 504 nm when the specimen oxidized at 1000 ℃ was reduced at 900 ℃ in a mild hydrogen atmosphere (97% N2, 3% H2) with a flow rate of 100 ml/min.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.319-320
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• 2009

In this study, high-quality Al-N doped p-type ZnO thin films were deposited on n-type Si (100) wafer or Si coated with buffer layer by DC magnetron sputtering in the mixture of $N_2$ and $O_2$ gas. The target was ceramic ZnO mixed with $Al_2O_3$ (2 wt%). The p-type ZnO thin film showed higher carrier concentration $2.93\times10^{17}cm^{-3}$, lower resistivity of $5.349\;{\Omega}cm$ and mobility of $3.99\;cm^2V^{-1}S^{-1}$, respectively. According to PL spectrum, the Al donor energy level depth ($E_d$) of Al-N codoped p-type ZnO film was reduced to about 51 meV, and the N acceptor energy level depth ($E_a$) was reduced to 63 meV, respectively.