• Proceedings of the KIEE Conference
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• 1990.11a
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• pp.139-142
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• 1990

A gas sensor, comprised of both ZnO and $PdCl_2$ powders, has been developed to sense the CO gas of low concentration (100 ppm). When the weight ratio of ZnO/$PdCl_2$ element sintered at $600^{\circ}C$ was 99.5/0.5, the maximum sensitivity to CO gas was obtained at the operating temperature of $200^{\circ}C$. Also, the response characteristics of this element were examined, and then the response time was decreased from 90 to 45 sees, with operating temperature increase in the range of $100-400^{\circ}C$.

• Proceedings of the KIEE Conference
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• 1999.07e
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• pp.2155-2157
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• 1999

This paper describes a new measurement method of resistive current and the technique of deterioration diagnosis for ZnO element. The consequence of current increasing (resistive current) with time is the eventual attainment of a state of thermal instability that may lead to arrester failure. So, it is very important to measure a leakage current of ZnO arrester installed at on-state. For the high-precision and more reliability, an iron core, which has a very high relative permeability, was used for increasing detection sensitivity, and we also used the personal computer for the data storage and program and analysis. And we have verified the reliability and performance of the sensing device through several laboratory tests.

• Proceedings of the KIEE Conference
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• 1998.07e
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• pp.1740-1742
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• 1998

This paper describes the technique of deterioration diagnosis for ZnO element. Due to the non-linear resistance of ZnO block, the total leakage current contains harmonics when arrester deteriorated. The most significant harmonics is the 3rd order component. So, it can be used as an indicator of the arrester condition. An iron core, which has a very high relative permeability, is used for increasing detection sensitivity and the 3th order harmonics of leakage current was detected by band-pass circuit. And we have verified the reliability and performance of the sensing device through several laboratory tests.

• Korean Journal of Materials Research
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• v.28 no.2
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• pp.101-107
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• 2018

Li-incorporated ZnO thin films were deposited by using ultrasonic-assisted spray pyrolysis deposition (SPD) system. To investigate the effect of Li-incorporation on the performance of ZnO thin films, the structural, electrical, and optical properites of the ZnO thin films were analyzed by means of X-ray diffraction (XRD), field-emssion scanning electron microscopy (FE-SEM), Hall effect measurement, and UV-Vis spectrophotometry with variation of the Li concentraion in the ZnO sources. Without incorporation of Li element, the ZnO surface showed large spiral domains. As the Li content increases, the size of spiral domains decreased gradually, and finally formed mixed small grain and one-dimensional nanorod-like structures on the surface. This morphological evolution was explained based on an anti-surfactant effect of Li atoms on the ZnO growth surface. In addition, the Li-incorporation changed the optical and electrical properties of the ZnO thin films by modifying the crystalline defect structures by doping effects.

• Proceedings of the KIEE Conference
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• 1991.07a
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• pp.209-212
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• 1991

Recently, oxide semiconductor gas sensors consisted of n-type semiconductor materials such as $SnO_2$, ZnO and $Fe_2O_3$ have been widely used to detect reducing gases. The advantage of thick-film technology include the possibility of mass-production and automation, that of integrating the sensing element in a hybrid circuit and that of fuctional trimming of the sensor and/or the circuit. which would enable really interchangeable transducers to be prepared. In this paper, we made ZnO and $SnO_2$ gas sensors and investigated the sensitivity to CO gas. Therefore, we compared a ZnO gas sensor with a $SnO_2$ gas sensor.

• Proceedings of the KIEE Conference
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• 1992.07b
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• pp.733-736
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• 1992

In this paper, Finite Element Method was used for the analysis of Potential Distribution of ZnO varistor and visualizing the characteristics of conduction mechanism. The results can be obtained by 2-dimensional element division and numerical method for Poisson's equation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.4
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• pp.391-396
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• 2023

Recently, as power and electronic devices have increased in frequency and capacity, it has become a major concern to protect electronic circuits and electronic components used in these devices from abnormal voltages such as various surges and pulse noise. To respond to variously rated voltages applied to power electronic devices, the rated voltages of various varistors can be obtained by controlling the size of internal particles of the varistor or controlling the number of layers of the varistor. During bonding, the problem of unbalanced thermal runaway occurring between the electrode and the varistor interface causes degradation of the varistor and shortens its life of the varistor. In this study, to solve the problem of unbalanced heat distribution of stacked varistors to adjust the operating voltage, the contents of the ZnO-based varistor composition were 96 wt% ZnO, 1 mol% Sb₂O₃, 1 mol% Bi₂O₃, 0.5 mol% CoO, 0.5 mol% MnO, and 1 mol% TiO₂. A multi-layered ZnO varistor was modeled by bonding a single varistor with a composition in three layers according to the operating voltage. The thermal distribution of the triple-layered ZnO varistor was analyzed for the thermal runaway phenomenon that occurred during varistor operation using the finite element method according to Comsol 5.2.

• Journal of the Korean Magnetics Society
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• v.11 no.6
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• pp.256-261
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• 2001

These experiments were carried out to examine the effects of element substitution of Zn and La-Zn for Sr-ferrite. The calcined properties of Zn and La-Zn element substitution were examined, and also the sintered magnetic properties were compared with the stoichiometric condition. The magnetization properties of calcined SrM materials is as follows; M$\_$s/ : 61.06 emu/g. Also, the magnetization properties of calcined Zn$\_$0.3/-SrM materials is as follows; M$\_$s/ : 66.90 emu/g. The sintered magnetic properties of (La-Zn)$\_$0.3/-SrM composition is as follows; B$\_$r/ : 4.21 kG, BH$\_$max/: 4.19 MGOe.

• Journal of Powder Materials
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• v.12 no.6 s.53
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• pp.399-405
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• 2005

Nanopowders of titanium dioxide $(TiO_2)$ incorporating the transition metal element(s) were synthesized by flame synthesis method. Single element among Fe(III), Cr(III), and Zn(II) was doped into the interior of $TiO_2$ crystal; bimetal doping of Fe and Zn was also made. The characteristics of transition-metal-doped $TiO_2$ nanopowders in the particle feature, crystallography and electronic structures were determined with various analytical tools. The chemical bond of Fe-O-Zn was confirmed to exist in the bimetal-doped $TiO_2$ nanopowders incorporating Fe-Zn. The transition element incorporated in the $TiO_2$ was attributed to affect both Ti 3d orbital and O 2p orbital by NEXAFS measurement. The bimetal-doped $TiO_2$ nanopowder showed light absorption over more wide wavelength range than the single-doped $TiO_2$ nanopowders.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.122-122
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• 2010

ZnO is a widely investigated material for the blue and ultraviolet solid-state emitters and detectors. It has been promoted due to a wide-band gap semiconductor which has large exciton binding energy of 60 meV, chemical stability and low radiation damage. However, there are many problems to be solved for the growth of p-type ZnO for practical device applications. Many researchers have made an efforts to achieve p-type conductivity using group-V element of N, P, As, and Sb. In this letter, we have studied the optical characteristics of the antimony-doped ZnO (ZnO:Sb) thin films by means of photoluminescence (PL), PL excitation, temperature-dependent PL, and time-resolved PL techniques. We observed donor-to-acceptor-pair transition at about 3.24 eV with its phonon replicas with a periodic spacing of about 72 meV in the PL spectra of antimony-doped ZnO (ZnO:Sb) thin films at 12 K. We also investigate thermal activation energy and carrier recombination lifetime for the samples. Our result reflects that the antimony doping can generate shallow acceptor states, leading to a good p-type conductivity in ZnO.