• 제목/요약/키워드: ZnO Varistor

검색결과 285건 처리시간 0.024초

적층형 ZnO바리스터의 내부전극과 Bi$_2$O$_3$ 와의 반응 (The Reaction of Internal Electrodes with Bi$_2$O$_3$ in Multilayer ZnO Varistor)

  • 김영정;김환;홍국선;이종국
    • 한국세라믹학회지
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    • 제35권11호
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    • pp.1121-1129
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    • 1998
  • Reactions between Ag-Pd internal electrode materials and{{{{ { {Bi }_{2 }O }_{3 } }} in multilayer chip varistor were in-vestigated. For more than 1 mol%{{{{ { {Bi }_{2 }O }_{3 } }} in varistor composition internal electrode structure was destroyed due to the reaction between internal electrode and{{{{ { {Bi }_{2 }O }_{3 } }} But for typical varistor compositions (below 1 mol% of{{{{ { {Bi }_{2 }O }_{3 } }} content) microstructural changes around the internal electrode were not observed. However SEM-EDS and TEM-EDS analysis showed the uneven distribution of{{{{ { {Bi }_{2 }O }_{3 } }} in the internal electrode which was due to the migration of{{{{ { {Bi }_{2 }O }_{3 } }} to the electorde during sintering. As a results the nonlinear coefficient of multilayer varistor showed very large distribution as well as the breakdown voltage.

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ZnO세라믹 바리스터에 NiO첨가가 전기적 특성에 미치는 영향 (Influence of NiO additive on electrical properties of ZnO-based ceramic varistors)

  • 남춘우
    • E2M - 전기 전자와 첨단 소재
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    • 제9권6호
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    • pp.542-550
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    • 1996
  • ZnO-based ceramic varistors containing NiO range 0.5 mol% to 4.0 mol% were fabricated by standard ceramic techniques. The influence of NiO on the microstructure and electrical behavior of ZnO varistor was investigated. As the content of NiO additive increases, average grain size decreased from 16.5.mu.m to 13.2.mu.m, and the amount of NiO existing in the grain interior and grain boundary region was approximately equal. NiO acted as an acceptor which decreases donor concentration due to the increase of Zn vacancy in the grain, and as a driver which migrates Zn interstitial in the depletion region toward the interface of grain boundary, which resulted in the decrease of interface state density. As a result, increasing the content of NiO additive, barrier height, nonlinear exponent, and varistor voltage decreased, and leakage current increased. Wholly, the physical and electrical properties of the ZnO varistor can be said to be affected by the NiO additive.

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사마륨 옥사이드가 첨가된 $Pr_6O_{11}$계 ZnO 바리스터의 전도특성 (Conduction Characteristics of $Pr_6O_{11}$-Based ZnO Varistor Added with Samarium Oxides)

  • 윤한수;박춘현;남춘우
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1999년도 하계학술대회 논문집 D
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    • pp.1689-1691
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    • 1999
  • The conduction characteristics of $Pr_6O_{11}$-based ZnO varistor were investigated. ZnO-$Pr_6O_{11}$-CoO-$Sm_2O_3$-based ZnO varistor were sintered at $1300^{\circ}C$ and $1350^{\circ}C$ in the addition range $0.0\sim2.0mol%$ $Sm_2O_3$, respectively. ZnO varistors which are added with 1.0mol% at each temperature exhibited best excellent conduction characteristics, namely the nonlinear exponent was 42.05 at $1300^{\circ}C$, 36.79 at $1350^{\circ}C$ and leakage current was $9.16{\mu}A$ at $1300^{\circ}C$, $11.7{\mu}A$ at $1350^{\circ}C$. Consequently, it is estimated that ZnO-$Pr_6O_{11}$-CoO-$Sm_2O_3$-based ZnO varistors, which $Sm_2O_3$ is added 1.0mol% is to be used as a basic composition of $Pr_6O_{11}$-based ZnO varistors.

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ZnO 바리스터의 펑처 현상에 관한 보로노이 시뮬레이션 (Voronoi Simulation on the Puncture Phenomena of ZnO Varistors)

  • 이영종;황휘동;한세원;강형부
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제48권2호
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    • pp.109-116
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    • 1999
  • ZnO Varistor is an electronic ceramic device to absorb the surge voltage from low voltage to high. To investigate the puncture mechanism occurring in NnO varistor, the Voronoi simulation for formulating the relation between the applied voltage and the increase of the temperature inside grain is applied. The Voronoi network can realize the structure of the practical varistor better than the established simple network. Using the current through each grain and the voltage applied to the grain, Joule heating energy is calculated and the phenomenon that the puncture occurs can be analyzed quantitatively by simulating the electric and thermal characteristics according to the externally applied pulsed voltage.

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ZnO 나노파우더로 제조된 Bi계 바리스터의 가속열화 특성 (The Characteristics on the Accelerated Degradation of Bi-based Varistor fabricated with ZnO Nano-powder)

  • 왕민성;왕증매;이동규;박춘배
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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    • pp.203-204
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    • 2006
  • Nano-Varistors fabricated with ZnO 30nm and 80nm powders were studied about the electrical characteristics with AC accelerated degradation in this paper Especially, ZnO nano-powder varistors were sintered m air at $1050^{\circ}C$ and analyzed the phenomenons of before and after AC degradation test. The stress conditions of AC degradation test were $1.0V_{1mA}$ $115{\pm}2^{\circ}C$ for 24h. 80nm-varistor was exhibited better performance than 30nm-varistor m the electrical stabilities. And then 80nm-varistor resulted m the degradation characteristics that the variation rate of operating voltage, nonlinear coefficient and leakage current was -0 3%, -0 4% and -3 3%, respectively.

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Electrical Characteristic Changes of ZnO Varistors by Energy Absorption

  • Kim, Woo-Hyun;Hwang, Seong-Cheol;Wang, Guoming;Kil, Gyung-Suk;Ahn, Chang-Hwan
    • 한국전기전자재료학회논문지
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    • 제30권12호
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    • pp.817-821
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    • 2017
  • As a ZnO varistor is subjected to electrical and environmental stresses, it degrades gradually, which may result in power interruption by short circuit. This study investigates changes in the electrical characteristics of ZnO varistors due to deterioration owing to energy absorption, and determines the optimal parameters for on-line diagnosis of the varistor. Two types of varistors were used for an accelerated aging experiment involving the application of the $8/20{\mu}s$ standard lightning impulse current. The electrical characteristics in terms of the reference voltage, total leakage current, resistive leakage current, and third-harmonic component of the total leakage current were measured, and their change rates were analyzed. The results revealed that the total leakage current increased slightly with an increase in the varistor absorbed energy, while the resistive leakage current and the third-harmonic component increased apparently. Therefore, the third-harmonic component of the total leakage current was proposed as the optimal parameter for on-line monitoring of ZnO varistor conditions.

종자 입정을 이용한 저전압용 ZnO 바리스터의 제조 (Fabrication of Low Voltage ZnO Varistor by Seed Grain Method)

  • 강을손;성건용;김종희
    • 한국세라믹학회지
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    • 제27권4호
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    • pp.473-480
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    • 1990
  • Low-voltage ZnO-based varistors were made by seed grain method at various sintering conditions. Their microstructure and electrical properties were investigated and comlpared with those of the ZnO varistors made by a conventional method at the same sintering condition. During the sintering process, the added seed ZnO grain rapidly grew to be a gaint grain(above 500$\mu\textrm{m}$) provinding easy current path. Therefore the breakdown voltage was lowered as much as the order of 1/10-1/5 in comparison to that of the varistor made by a conventional method. But the grain size of the giant ZnO was little influenced by sintering condition, so the breakdown voltate was also little influenced. The weight loss was decreased by the addition of the seed grain, because the giant grain decreased the evaporation area. Therefore the nonobmic property of the specimen made by seed grain method was little influencedby sintering condition. In this research the low-voltage varistor made by seed grain method showed the least leakage current when sintered at 1150$^{\circ}C$ for zero hour.

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3-성분 종입자법으로 제조한 저전압 ZnO 바리스터의 발진 전도특성 (The oscillation conduction characteristics of ZnO varistor fabricated with 3-composition seed grain method)

  • 장경욱;김영천;황석영;김용주;이준웅
    • E2M - 전기 전자와 첨단 소재
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    • 제9권10호
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    • pp.1019-1026
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    • 1996
  • In this study, we may be presented the carrier oscillation properties for the low-voltage varistor fabricated by a new method of three composition seed grain, in order to analyze the behavior of carriers at the its equivalent circuit model. The oscillation phenomena of carriers appeared from current-voltage characteristics under knee voltage is shown by the transient flow of nontrapped carriers group in the trap level of intergranular layer, surface state and/or depletion layer. In particularly, current oscillation phenomena is hardly shown in the high electric field. It is that the injected carriers from both electrodes are directly from the conduction band of forward biased ZnO grain through the intergranular layer into the reverse biased ZnO grain, because the trap level in the electric field above the knee voltage is mostly filled.

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분위기 소결공정에 의한 ZnO 바리스터의 열화기구 연구 (The Study of Degradation Mechanism as ZnO Varistor with The Ambient Sintering-Process)

  • 소순진;김영진;최운식;박춘배
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1999년도 추계학술대회 논문집
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    • pp.117-120
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    • 1999
  • The relationship between the DC degradation characteristics of the ZnO varistor and the ambient sintering-process is investigated in this study. ZnO varistors made of Matsuoka's composition were fabricated by standard ceramic techniques. The ambient sintering-process is performed at the extraordinary electrical-furnace which is equipped with the vacuum system. The Gas of sintering process was oxygen, nitrogen, argon, air respectively. The microstructure of ZnO varistors be made use of SEM equipment. The condition of DC degradation tests were conducted at $115\pm2^{\circ}C$ for periods up to 13 h. Current-voltage analysis is used to determine nonlinear coefficients($\alpha$). Resistance-frequency and capacitance-frequency analysis are accomplished to the understanding of electrical properties as DC degradation test. From above analysis, it is found that the ZnO varistor sintered in oxygen atmosphere showed superior properties at the DC degradation test.

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