• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.364-364
• /
• 2013

현재 투명전극은 주로 ITO를 사용하고 있으며, ITO는 인듐산화물(In2O3)과 주석산화물(SnO2)이 9대 1의 비율로 혼합된 화합물로 인듐이 주성분이다. 따라서 ITO 사용량의 증가는 인듐의 수요 증가를 이끌어 2003년 이후 인듐 잉곳의 가격이 급등하였다. LCD에 응용되는 금속재료의 가격추이를 비교해보면, 인듐이 가장 큰 변화를 보이고 있으며, 2005년 인듐 가격은 2002년 대비 1,000% 이상 상승하였다가 2007년 이후 500%p 하락하여 2008년 2월 22일 기준으로 톤당 49만 달러에 거래되고 있다. 같은 기간 동안 알루미늄의 가격은 76.6% 상승하였으며 구리는 394%, 주석은 331% 상승하였다. 이러한 인듐의 가격 상승폭은 동일한 기간 동안 다른 금속 재료와 비해 매우 크며, 단위 질량당 가격도 20배 이상 높은 수준이다. ITO의 주성분인 인듐의 이러한 가격의 급등 및 향후 인듐의 Shortage 예상으로 인해 ITO 대체재 확보의 필요성이 증가되고 있다. 태양광 발전산업에서 현재 주류인 결정질 실리콘 태양전지의 변환효율은 꾸준히 향상되고 있으나, 태양전지의 가격이 매년 서서히 하강되고 있는 실정에서 결정질 실리콘 가격의 상승 등으로 고부가 가치 산업유지에 어려움이 있으며, 생산 원가를 낮출 수 있는 태양전지 제조기술로는 2세대 태양전지로 불리는 박막형이 현재의 대안으로 자리매김하고 있으며, 박막태양전지 산업분야가 현재의 정부정책 지원 없이 자생력을 갖추고 또한 시장 경쟁력을 확보하기 위해서는 박막태양전지 개발과 더불어 저가의 재료개발도 시급한 상황이다. 본 연구에서는 In-line magnetron sputtering system을 사용하여 소다라임 유리기판 위에 박막태양전지용 투명전도성 ZnO(Al) 박막 및 ZnO(AlGa) 박막을 각각 제작하였다. 각각 박막의 표면특성 및 성장구조, 결정성을 조사하였고, 또한 전기적 특성, 홀이동도와 개리어농도, 박막의 두께, 광투과율 특성을 연구하였다. ZnO(Al)박막, ZnO(AlGa)박막 대한 각각 특성을 평가하고 그 결과들을 논하고자 한다.

• The Journal of the Convergence on Culture Technology
• /
• v.9 no.5
• /
• pp.523-528
• /
• 2023

The applicability as a material to improve solar cell performance was reviewed by synthesizing a phosphor that emits red wavelengths by a liquid synthesis method using a metal salt aqueous solution and a polymer medium as a starting material. An aqueous solution was prepared using nitrate of metals such as Ca, Zn, Al, and Eu, and a precursor impregnated with starch, a natural polymer, was sintered to synthesize CaZnAlO:Eu phosphor powder. The surface structure and composition analysis of the synthesized CaZnAlO:Eu phosphor powder were analyzed by scanning electron microscope(SEM) and energy-dispersed X-ray spectroscopy(EDS). The crystal structure of CaZnAlO:Eu phosphor particles was analyzed by an X-ray diffraction analyzer (XRD). As a result of measuring the photoluminescence(PL) characteristics of the phosphor, it was confirmed that a red phosphor with a light emitting wavelength of 650-780nm was successfully synthesized. According to SEM and EDS analysis, the synthesized Ca₁₄Zn₆Al_9.93O₃₅:Eu³⁺_0.07 phosphor powder has a uniform particle size, and Eu ions used as an activator are present. The synthesized CZA:Eu³⁺ phosphor can be used as a material that can increase the light absorption efficiency of the solar cell by converting ultraviolet or visible light down conversion into a wavelength in the near-infrared region.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.8 no.4
• /
• pp.592-598
• /
• 1998

AZO(Aluminum doped Zinc Oxide) thin films were fabricated by reactive DC magnetron sputtering method using zinc metal target (Al 2%) and zinc oxide target ($Al_2O_3\;2%$) respectively. The intermediate condition with optimum transmittance and conductivity was obtained by controlling the sputtering parameters. Oxygen gas ratio for this condition was $0.5{\times}10^{-2}~1.0{\times}10^{-2}$ in oxide target and. In case of metal target, this optimum oxygen gas ratio at the applied power of 0.6 kW and 1.0 kW was 0.215~0.227 and 0.305~0.315, respectively. The resistivity of AZO film deposited was obtained $1.2~1.4{\times}10^{-3} {\Omega}{\cdot}$cm as deposited state regardless of target species.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.07b
• /
• pp.939-942
• /
• 2004

Al doped Zinc Oxide(ZnO:Al) films, which is widely used as a transparent conductor in optoelectronic devices such as solar cell, liquid crystal display, plasma display panel, thermal heater, and other sensors were Prepared by using the capacitively coupled RF magnetron sputtering method. In this paper the effect of RF discharge power on the electrical, optical and structural properties were investigated experimentally. The results show that the structural and electrical properties of the film are highly affected by the variation of RF discharge power. The optimum growth conditions were obtained for films doped with 2 wt% of $Al_2O_3$ and 200 W in RF discharge power, which exhibit a resistivity of $10.4{\times}10^{-4}{\Omega}-cm$ associated with a transmittance of 89.66 % for 1000nm in films thickness in the wavelength range of the visible spectrum.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.291.2-291.2
• /
• 2014

ZnO 박막(thin film)은 씨앗층(seed layer)의 종류, 두께, 증착 조건 등에 따라 그 특성이 달라지는 것으로 알려져 있다. 이에 본 연구에서는 씨앗층의 종류에 따른 박막의 특성변화를 알아 보기 위해, 졸겔 스핀코팅(sol-gel spin-coating) 방법으로 4가지 종류의 씨앗층(Al-ZnO, Co-ZnO, Cu-ZnO, In-ZnO) 위에 ZnO 박막을 성장 한 후 성장된 ZnO 박막의 구조적, 광학적 특성을 field emission scanning electron microscope, X-ray diffractometer, UV-visible spectrometer를 통해 조사하였다. ZnO 박막의 표면구조는 씨앗층의 종류에 따라 변하였으며, 씨앗층 위에 성장된 ZnO 박막들의 c축 배향성과 결정성이 씨앗층 없이 성장된 ZnO 박막보다 더 우수하게 나타났다. 투과도(transmittance) 측정값을 통해 계산된 광학적 밴드갭(optical bandgap)과 Urbach 에너지는 씨앗층에 따라 다른 값을 나타내었다. 광학적 밴드갭은 Al-ZnO 씨앗층 위에 성장된 ZnO 박막에서 가장 크게 나타났으며, Urbach 에너지는 Co-ZnO 씨앗층 위에 성장된 ZnO 박막에서 가장 낮았다. 따라서 ZnO박막 성장 시 용도에 맞게 적절한 씨앗층을 사용하는 것은 소자의 성능을 향상시키는데 매우 중요한 역할을 할 수 있다.

• Korean Journal of Materials Research
• /
• v.27 no.3
• /
• pp.161-165
• /
• 2017

In this paper, synthesis of terephthalate intercalated Zn-Al: Layered double hydroxides (LDHs) was studied. We designed freestanding Zn-Al: carbonate LDH nanosheets for a facile exchange technique. The as-prepared Zn-Al carbonate LDHs were converted to terephthalate intercalated Zn-Al:LDHs by ion exchange method. Initially, Al-doped ZnO (AZO) thin films were deposited on p-Si (001) by facing target sputtering. For synthesis of free standing carbonate Zn-Al:LDH, we dipped the AZO thin film in naturally carbonated water for 3 hours. Further, Zn-Al: carbonate LDH nanosheets were immersed in terepthalic acid (TA) solution. The ion exchange phenomena in the terephthalate assisted Zn-Al:LDH were confirmed using FT-IR analysis. The crystal structure of terephthalate intercalated Zn-Al:LDH was investigated by XRD pattern analysis with different mole concentrations of TA solution and reaction times. The optimal conditions for intercalation of terephthalate from carbonated Zn-Al LDH were established using 0.3 M aqueous solution of TA for 24 hours.

• 한국신재생에너지학회:학술대회논문집
• /
• 2010.11a
• /
• pp.42.2-42.2
• /
• 2010

Transparent conducting oxides (TCOs) are of significant importance for their applications in various devices, such as light-emitting diodes, thin-film solar cells, organic light-emitting diodes, liquid crystal displays, and so on. In order for TCOs to contribute to the performance improvement of these devices, TCOs should have high transmittance and good electrical properties simultaneously. Sn-doped $In_2O_3$ (ITO) is the most commonly used TCO. However, indium is toxic and scarce in nature. Thus, ZnO has attracted a lot of attention because of the possibility for replacing ITO. In particular, group III impurity-doped ZnO showed the optoelectronic properties comparable to those of ITO electrodes. Al-doped ZnO exhibited the best performance among various doped ZnO films because of the high substitutional doping efficiency. However, in order for the Al-doped ZnO to replace ITO in electronic devices, their electrical and optical properties should further significantly be improved. In this connection, different ways such as a variation of deposition conditions, different deposition techniques, and post-deposition annealing processes have been investigated so far. Among the deposition methods, RF magnetron sputtering has been extensively used because of the easiness in controlling deposition parameters and its fast deposition rate. In addition, when combined with post-deposition annealing in a reducing ambient, the optoelectronic properties of Al-doped ZnO films were found to be further improved. In this presentation, we deposited Al-doped ZnO (ZnO:$Al_2O_3$ = 98:2 wt%) thin films on the glass and sapphire substrates using RF magnetron sputtering as a function of substrate temperature. In addition, the ZnO samples were annealed in different conditions, e.g., rapid thermal annealing (RTA) at $900^{\circ}C$ in $N_2$ ambient for 1 min, tube-furnace annealing at $500^{\circ}C$ in $N_2:H_2$=9:1 gas flow for 1 hour, or RTA combined with tube-furnace annealing. It is found that the mobilities and carrier concentrations of the samples are dependent on growth temperature followed by one of three subsequent post-deposition annealing conditions.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2003.07a
• /
• pp.924-927
• /
• 2003

Aluminium-doped ZnO (ZnO:Al) films were grown by atomic layer-controlled deposition on glass substrates at temperature of 200 $^{\circ}C$ using diethylzinc($Zn(C_{2}H_{2})_{2}$; DEtZn), water($H_{2}O$) and trimethylaluminium ($Al(CH_{3})_{3}$; TMA) as precursors. As the cycle ratio of TMA to DEZn(TMA/DEZn) increased, the resistivity of the films decreased and the roughness increased. In the case of TMA/DEZn pulse ratio of 1 to 10, the film had a resistivity of $9.7{\times}l0^{-4}{\Omega}{\cdot}cm$ and a roughness of 2.25nm(rms), while in the case of only DEZ injection the film had a resistivity of $3.5{\times}10^{-3}{\Omega}{\cdot}cm$ and a roughness of 1.07nm(rms)

• Proceedings of the Materials Research Society of Korea Conference
• /
• 1999.11a
• /
• pp.159-159
• /
• 1999

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2006.04a
• /
• pp.111-111
• /
• 2006