• Journal of Surface Science and Engineering
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• v.41 no.1
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• pp.12-15
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• 2008

The zinc oxide(ZnO) nanowires were deposited on Si(001) substrates by thermal chemical vapour deposition without any catalysts. SEM data suggested that the grown nanostructures were the well-aligned ZnO single crystals with preferential orientation. Back-gate ZnO nanowire field effect transistors(FET) were successfully fabricated using a photolithography process. The fabricated nanowire FET exhibits good contact between the ZnO nonowire and Au metal electrodes. Based on I-V characteristics it was found out that the ZnO nanowire revealed a characteristic of n-type field effect transistor. The drain current increases with increasing drain voltage, and the slopes of the $I_{ds}-V_{ds}$ curves are dependent on the gate voltage.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.953-956
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• 2003

Transparent conductive ZnO:Ga thin films were deposited on glass substrates using rf magnetron sputtering method for flat panel display. The ZnO:Ga films were preferentially oriented to c-axis (002) of on substrates. The surface morphology was smooth and had not porous whatever substrate temperature was. The electrical conductivity of the thin films were in the range of $1.6{\times}10^2{\sim}6.7{\times}10^3\;{\Omega}^{-1}cm^{-1}$ at the growth temperature from 50 to $400^{\circ}C$, whereas has a maximum at around $250^{\circ}C$. By combining of XRD and EXAFS, the crystallinity and grain size decreased with increasing substrate temperature corresponding to the reduction of the grain-boundary scattering. The optical transmittance of sputtered ZnO:Ga thin films had an improved about 86% in the UV-visible region.

• Journal of the Korean Ceramic Society
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• v.50 no.6
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• pp.504-509
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• 2013

In this study, ZnSe-$TiO_2$ composites were synthesized by a facile hydrothermal-assisted sol-gel process and characterized by nitrogen adsorption isotherms (77 K), X-ray diffraction (XRD), scanning electron microscopy (SEM) with energy dispersive X-ray (EDX) analysis, transmission electron microscopy (TEM) and UV-vis diffuse reflectance spectrophotometry. The photocatalytic activity was investigated by decoloration methylene blue (MB), methyl orange (MO), and rhodamine B (Rh.B) in an aqueous solution under visible light irradiation. The results revealed that the photocatalytic activity of the ZnSe-$TiO_2$ photocatalyst was much higher than that of pure$TiO_2$. The ZnSe nanoparticles, which act as a photosensitizer, not only extend the spectral response of $TiO_2$ to the visible region but also reduce charge recombinations.

• Journal of the Korean Ceramic Society
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• v.47 no.4
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• pp.325-328
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• 2010

Varying quantities of a high-thermal-expansion glass, 50CaO-20ZnO-$20B_2O_3-10SiO_2$ (CZBS), were added to alumina and sintered at $875^{\circ}C$ for 2 h for low temperature co-firing ceramic (LTCC) applications. As the amount of glass addition increased from 40 wt% to 70 wt%, the apparent density of the sintered product increased from 88.8% to 91.5%, which was also qualitatively confirmed by microstructural observation. When the glass addition was very high, e.g., 70 wt%, an apparent formation of secondary phases such as $CaZn_2AlZnSiAlO_7$, $Ca_2Al(AlSi)O_7$, $Ca_2Al_2SiO_7$, $Ca_2ZnSi_2O_7$ and ZnO, was observed. Both the dielectric constant and the coefficient of thermal expansion increased with the glass addition, which was qualitatively consistent with the analytical models, while the experimental values were lower than the predicted ones due to the presence of pores and secondary phases.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.36 no.2
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• pp.111-115
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• 2012

In this paper, the thermal conductivities of ethylene glycol. based ZnO nanofluids manufactured using the pulsed wire evaporation method are experimentally measured using the transient hot wire method at temperatures in the range of $10^{\circ}C$ to $50^{\circ}C$. For this purpose, ethylene glycol.based ZnO nanofluids with 1%, 3%, and 5.5% volume fractions were manufactured using the pulsed wire evaporation method. Transmission electron microscopy (TEM) was performed to investigate the suspension stability of the ethylene glycol.based ZnO nanofluids. Based on the experimental results, the thermal conductivities of ethylene-glycol-based ZnO nanofluids increase with increasing volume fractions of ZnO nanofluids. The maximum enhancement of the thermal conductivity is 26.5% for a volume fraction of 5.5% at $22^{\circ}C$. Finally, the experimental results are compared with conventional models such as the Maxwell and Hasselman & Johnson models.

• Journal of the Korean Magnetics Society
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• v.15 no.1
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• pp.1-6
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• 2005

In this study we investigate the electronic structure and magnetism of transition metal (TM = Ti, Cr, Mn, Fe, Co, Ni, Ru, Pd, Ag ) deped ZnO($TM_{0.25}Zn_{0.75}O$), which are expected to have Curie temperature. Full-potential Linearized Augmented Plane Wave(FLAPW) metod is adopted with exchange-correlation potential expressed as general gradient approximation(GGA). The calculated magnetic moments of ($TM_{0.25}Zn_{0.75}O$) are 0.83, 3.03, 4.03, 3.48, 2.47, 1.56, 0.43, 0.75, 0.01 ${\mu}_B$ for TM = Ti, Cr, Mn, Fe, Co, Ni, Ru, Pd, Ag, respectively. The nearest neighbor O atom to the transition metal is calculated to have a significant magnetic moment of about 0.1${\mu}_B$, ?? 새 strong hybridization between O-p and TM-d bands. As the results, the systems may have larger magnetic moments in total, compared to the corresponding isolated atoms. The 3d TM doped systems exhibit the half-metallic character except Co, wheres the 4d TM doped systems behave like normal metals and low spin polarization at the Fermi levels.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1356-1359
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• 2007

• Proceedings of the Korean Magnestics Society Conference
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• 1991.11a
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• pp.64-64
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• 1991

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.454-454
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• 2010

In order to achieve a high efficient a-Si solar cell, the TCO (transparent conductive oxide) substrates are required to be a low sheet resistivity, a high transparency, and a textured surface with light trapping effect. Recently, a zinc oxide (ZnO) thin film attracts our attention as new coating material having a good transparent and conductive for TCO of solar cells. In this paper the optical properties of $H_2$ post-treated BZO (boron doped ZnO, ZnO:B) thin film are investigated with $O_2$-plasma treatment. The BZO thin films by MOCVD (Metal Organic Chemical Vapor Deposition) are investigated and the samples of $H_2$ post-treated BZO thin film are tested with $O_2$-plasma treatment by plasma treatment system with 13.56 MHz as RIE (Reactive Ion Etching) type. We measured the optical properties and surface morphology of BZO thin film with and without $O_2$-plasma treatment. The optical properties such as transmittance, reflectance and haze are measured with integrating sphere and ellipsometer. This result of the BZO thin film with and without $O_2$-plasma treatment is application to the TCO for solar cells.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.41.2-41.2
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• 2011

Display 산업의 확대로 인해 광학적 특성 및 전기적 특성이 우수한 TCO (Transparent conductive oxide) 연구가 활발히 진행되고 있다. 기존에는 ITO가 대부분의 분야에서 이용되었지만 In의 경제적인 단점으로 인해 새로운 대체물로써 ZnO가 떠오르고 있다. ZnO는 전형적인 n-type 반도체이며, wide band gap 물질로써 Al, Ga, B과 같은 3 족 원소를 doping 함으로써 광학적 및 전기적 특성을 향상시킬 수 있다. 최근에는 ZnO의 이온반경과 비슷한 Ga을 도핑한 Ga-doped ZnO 박막에 대한 연구가 활발히 진행되고 있다. 이는 ZnO에 Ga을 도핑함으로써 격자결함을 최소화 시키고 carrier concentration 및 hall mobility를 향상시켜 전기전도도의 향상을 이루기 때문이다. 본 연구에서는 $Ga_2O_3$이 3wt% doping 된 ZnO rotating cylindrical target 을 DC magnetron sputtering 을 이용하여 2 kW의 파워와 70 kHz의 주파수를 고정하고, 증착 온도를 변화시켜 유리 기판 위에 Ga-doped ZnO 박막을 증착 하였다. 증착 시 온도가 Ga-doped ZnO 박막에 미치는 영향을 관찰하기 위해 박막 표면의 조성을 분석하였고, 결정성 및 전기적 특성의 변화를 통해 박막의 특성을 비교 평가하였다. Ga-doped ZnO 박막의 표면과 두께는 SEM (Scanning electron microscope) 분석을 통해 관찰하였고, XRD (X-ray diffractometer) 를 이용하여 결정학적 특성을 확인하였다. 또한 Van der Pauw 방법을 이용한 hall 측정을 통해 resistivity, carrier concentration, hall mobility를 분석하였고, UV-Vis를 이용하여 박막의 투과율을 분석하였으며, 이를 토대로 투명 전도막으로써 Ga-doped ZnO 박막의 응용 가능성을 평가하였다.