• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.12
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• pp.1117-1123
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• 2005

In this study, our varistors based on M. Matsuoka's composition were fabricated with ZnO nano-powder whose sizes were 50 nm and 100 nm. Before fabrication of ZnO nano-powder varistors, structure and Phase were analyzed by FE-SEM and XRD with size of ZnO nano-powders to obtain manufacturing information to fabricate the first ZnO varistors using by nano-powders. As a results of these analyses, calcination and sintering temperatures were respectively designed at $600^{\circ}C\;and\;1050^{\circ}C$. ZnO nano-powder varistors were analyzed by SEM and XRD to measure the changes of microstructures and phase after sintered by out process conditions. Also, electrical properties of ZnO nano-powder varistors were obtained by capacitance-voltage, frequency-teal impedance, and current-voltage corves. Our ZnO nano-powder varistors had about 2.5 times of electric field at varistor voltage as compared with normal ZnO varistors fabricated with micro-powder. Also, leakage current and non-liner coefficient respectively had $2.0{\times}10^{-6}A/cm^{-2}$ and 41 for ZnO nano-powder varistors with 50 nm.

• Korean Journal of Materials Research
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• v.25 no.6
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• pp.300-304
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• 2015

Nanorod ZnO and spherical nano ZnO for gas sensors were prepared by hydrothermal reaction method and hydrazine method, respectively. The nano-ZnO gas sensors were fabricated by a screen printing method on alumina substrates. The gas sensing properties were investigated for hydrocarbon gas. The effects of Co concentration on the structural and morphological properties of the nano ZnO:Co were investigated by X-ray diffraction and scanning electron microscope (SEM), respectively. XRD patterns revealed that nanorod and spherical ZnO:Co with a wurtzite structure were grown with (100), (002), (101) peaks. The sensitivity of nanorod and spherical ZnO:Co sensors was measured for 5 ppm $CH_4$ and $CH_3CH_2CH_3$ gas at room temperature by comparing the resistance in air with that in target gases. The highest sensitivity to the $CH_4$ and $CH_3CH_2CH_3$ gas of spherical nano ZnO:Co sensors was observed at Co 6 wt%. The spherical nano ZnO:Co sensor exhibited a higher sensitivity to hydrocarbon gas than nanorod ZnO.

• Korean Journal of Materials Research
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• v.24 no.8
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• pp.413-416
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• 2014

The effects of an addition of CNT on the sensing properties of nano ZnO:CNT-based gas sensors were studied for $H_2S$ gas. The nano ZnO sensing materials were grown by a hydrothermal reaction method. The nano ZnO:CNT was prepared by ball-milling method. The weight range of the CNT addition on the ZnO surface was from 0 to 10%. The nano ZnO:CNT gas sensors were fabricated by a screen-printing method on alumina substrates. The structural and morphological properties of the ZnO:CNT sensing materials were investigated by XRD, EDS, and SEM. The XRD patterns revealed that nano ZnO:CNT powders with a wurtzite structure were grown with (1 0 0), (0 0 2), and (1 0 1) dominant peaks. The size of the ZnO was about 210 nm, as confirmed by SEM images. The sensitivity of the nano ZnO:CNT-based sensors was measured for 5 ppm of $H_2S$ gas at room temperature by comparing the resistance in air with that in target gases.

• Journal of the Korean Ceramic Society
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• v.35 no.5
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• pp.499-504
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• 1998

ZnO varistors having a composition of 98.0 mol% ZnO 1.0 mol% $Bi_2O_3$ 0.5 mol% $MnO_2$ were prepared by the Pechini process and the sintering behavior and electrical characteristics were studied. ZnO varis-색 powder with $1.5\mu\textrm{m}$ mean diameter and narow particle size distribution was obtained using the Pechni pro-cess. Typical intermediate stage grain growth of liquid phase sintering was observed by sintering at $1100^{\circ}C$ At this temperature ZnO varistors having uniform grain size and Bi-rich liquid phase distributed uniformly along grain boundaries were prepared. The nonlinear coefficients of the ZnO varistors were in the range of 40-60 The breakdown voltages of the varistors were nearly inversely propeortional to the grain size which reflects that ZnO varistors prepared by the Pechini process have uniform distribution of Bi-rich liquid phase along grain boundaries It is believed that the microstructures of ZnO varistors can be controlled effectively by using the Pechini process which makes the control of the electrical properties of ZnO varistors possible.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2014.11a
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• pp.256-257
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• 2014

The effects of the preparation conditions of ZnO-modified TaON on the photocatalytic activity for degradation of rhodamine B dye (Rh. B) under simulated solar light were investigated. The ZnO/TaON nanocomposite were prepared by loading particulate $Ta_2O_5$ with ZnO using different ZnO contents, followed by thermal nitridation at 1123 K for 5 h under $NH_3$ flow (20 ml min.1). The asprepared samples were characterized by XRD, UV-Vis-DRS, and SEM-EDX. The results revealed that the band gap energy absorption edge of as prepared nanocomposite samples was shifted to a longer wavelength as compared to ZnO and $Ta_2O_5$, and the 60 wt% ZnO/TaON nanocomposite exhibited the highest percentage (99.2 %) of degradation of Rh. B and the highest reaction rate constant ($0.0137min^{-1}$) in 4 h which could be attributed to the enhanced absorption of the ZnO/TaON nanocomposite photocatalyst. Hence, these results suggest that the ZnO/TaON nanocomposite exhibits enhanced photocatalytic activity for the degradation of rhodamine B under simulated solar light irradiation in comparison to the commercial ZnO, $Ta_2O_5$, and TaON.

• Journal of the Semiconductor & Display Technology
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• v.11 no.2
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• pp.13-16
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• 2012

Zinc oxide (ZnO) films were deposited by an RF magnetron sputtering system with the RF power of 200W and 300W and flow rate of oxygen gases of 20 and 30 sccm, in order to research the growth of ZnO on carbon doped silicon oxide (SiOC) thin film. The reflectance of SiOC film on Si film deposited by the sputtering decreased with increasing the oxygen flow rate in the range of long wavelength. In comparison between ZnO/Si and ZnO/SiOC/Si thin film, the reflectance of ZnO/SiOC/Si film was inversed that of ZnO/Si film in the rage of 200~1000 nm. The transmittance of ZnO film increased with increasing the oxygen gas flow rate because of the transition from conduction band to oxygen interstitial band due to the oxygen interstitial (Oi) sites. The low reflectance and the high transmittance of ZnO film was suitable properties to use for the front electrode in the display or solar cell.

• Journal of the Korean Ceramic Society
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• v.39 no.7
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• pp.649-656
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• 2002

In situ patterned zinc oxide thin films were prepared by precipitation of Zn(NO$_3$)$_2$ aqueous solution containing urea and by microcontact printing using Self-Assembled Monolayers(SAMs) on A1/SiO$_2$/Si substrates. The visible precipitation of Zn(OH)$_2$ that was formed in the Zn(NO$_3$)$_2$ aqueous solution containing urea was enhanced with an increase of the reaction temperature and the amount of urea. As the reaction time of Zn(NO$_3$)$_2$ with urea was prolonged, the thickness and grain size of Zn(OH)$_2$ thin layers were increased, respectively. The optimum precipitation condition was at 80$\^{C}$ for 1 h for the solution with the ratio of Zn(NO$_3$)$_2$ to urea of 1 : 8. Homogeneous ZnO thin films were fabricated by the heat treatment of 600$\^{C}$ for 1 h of Zn(OH)$_2$ precipitation on Al/SiO$_2$/Si substrate. This was available to the in-situ patterned ZnO thin films with uniform grain size. Hydrophobic SAM, Octadecylphosphonic Acid(OPA) and hydrophilic SAM, 2-Carboxyethylphosphonic Acid(CPA) were applied on the Al/SiO$_2$/Si substrate by microcontact printing method. In situ patterned ZnO thin film was successfully prepared by the heat treatment of Zn(OH)$_2$ precipitated on the surface of hydrophilic SAM, CPA.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.90.1-90.1
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• 2010

Due to the rapidly diminishing energy sources and higher energy production cost, the interest in dye-sensitized solar cells (DSSCs) has been increasing dramatically in recent years. A typical DSSC is constructed of wide band gap semiconductor electrode such as $TiO_2$ or ZnO that are anchored by light-harvesting sensitizer dyes and surrounded by a liquid electrolyte with a iodide ion/triiodide ion redox couple. DSSCs based on one-dimensional nano-structures, such as ZnO nanorods, have been recently attracting increasing attention due to their excellent electrical conductivity, high optical transmittance, diverse and abundant configurations, direct band gap, absence of toxicity, large exiton binding energy, etc. However, solar-to-electrical conversion performances of DSSCs composed of ZnO n-type photo electrode compared with that of $TiO_2$ are not satisfactory. An important reason for the low photovoltaic performance is the dissolution of $Zn^{2+}$ by the adsorption of acidic dye followed by the formation of agglomerates with dye molecules which could block the I-diffusion pathway into the dye molecule on the ZnO surface. In this paper, we prepared the DSSC with the ZnO electrode using the chemical bath deposition (CBD) method under low temperature condition (< $100^{\circ}C$). It was demonstrated that the ZnO seed layers played an important role on the formation of the ZnO nanostructures using CBD. To achieve truly low-temperature growth of the ZnO nanostructures on the substrates, a two-step method was developed and optimized in the present work. Firstly, ZnO seed layer was prepared on the FTO substrate through the spin-coating method. Secondly, the deposited ZnO seed substrate was immersed into an aqueous solution of 0.25M zinc nitrate hexahydrate and 0.25M hexamethylenetetramine at $90^{\circ}C$ for hydrothermal reaction several times.

• Current Photovoltaic Research
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• v.3 no.2
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• pp.54-60
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• 2015

ZnSnO thin films were deposited by atomic layer deposition (ALD) process using diethyl zinc ($Zn(C_2H_5)_2$) and tetrakis (dimethylamino) tin ($Sn(C_2H_6N)_4$) as metal precursors and water vapor as a reactant. ALD process has several advantages over other deposition methods such as precise thickness control, good conformality, and good uniformity for large area. The composition of ZnSnO thin films was controlled by varying the ratio of ZnO and $SnO_2$ ALD cycles. The ALD ZnSnO film was an amorphous state. The band gap of ZnSnO thin films increased as the Sn content increased. The CIGS solar cell using ZnSnO buffer layer showed about 18% energy conversion efficiency. With such a high efficiency with the ALD ZnSnO buffer and no light soaking effect, AlD ZnSnO buffer mighty be a good candidate to replace Zn(S,O) buffer in CIGSsolar cells.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.6
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• pp.372-375
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• 2017

ZnO thin films were deposited by RF magnetron sputtering and then diffused by using an As source in the ampouletube. Also, the ZnO p-n homojunction was made by using As-doped ZnO thin films, and its properties were analyzed. After the As doping, the surface roughness increased, the crystal quality deteriorated, and the full width at half maximum was increased. The As-doped ZnO thin films showed typical p-type properties, and their resistivity was as low as $2.19{\times}10^{-3}{\Omega}cm$, probably because of the in-diffusion from an external As source and out-diffusion from the GaAs substrate. Also, the ZnO p-n junction displayed the typical rectification properties of a p-n junction. Therefore, the As diffusion method is effective for obtaining ZnO films with p-type properties.