• Journal of the Korean Magnetics Society
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• v.17 no.1
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• pp.26-29
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• 2007

Fe-based powders, Fe-M(M=Cr, Mn, Cu, Zn), were prepared in Ar gas by mechanical alloying and their crystallographic and magnetic properties were investigated. X-ray diffraction indicates that the cubic lattice parameter increases for the M substitution. The distance of closest approach around M can explained the increase of lattice constant in Fe-M powders. $M\"{o}ssbauer$ spectroscopy measurements on Fe-M samples indicates the coexistence of ferromagnetic phases and paramagnetic phase that are created by the distribution of local environment M on Fe atom. On the other hand, The spread of line-width on $M\"{o}ssbauer$ spectra can be explained by the distribution of hyperfine magnetic fields. The results of quadrupole shift and isomer shift revealed that M substitutions in Fe-M powders didn't change both structure and the local charge distribution around Fe atom severely.

• Proceedings of the IEEK Conference
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• 2001.10a
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• pp.249-251
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• 2001

A novel technology for recycling valuable metals contained in waste dry-battery by vacuum metallurgy was devised by theoretical analysis. On the condition of the total chamber pressure of 1.013$\upsilon$10$^1$Pa, Hg, Cd and Zn are distilled in the temperature range of 773~973K, Pb is volatilized in the range of 1173~1273K while Mn, Cu, Fe and C are remained in residual. MnO$_2$and ZnO are reduced by carbon in waste dry-battery in 773~1273K. Pure metals including Zn, Cd, Hg and Pb can be recovered respectively from their mixed vapor by fractional condensation. Metal Cu and MnO$_2$can be obtained from the residual by hydrometallguical method. The technology can eliminate the pollution of Cd, Hg and Pb to environment.

• Proceedings of the KIEE Conference
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• 1988.07a
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• pp.828-830
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• 1988

This paper considered temperature-sensitive characteristics on the basis of curie tempeature and quenching method in the process of manufacturing Mn-Cu-Zn Fersite. The results are as follow. Curie tempeature drops according as the content of CuO and ZnO increases. It also decreases according as sintering temperature increases when the content of ZnO in fixed. Curie temperature drops more in quenching than in slow cooling and activation energy diminishes were too. On the basis of curie tempeature, activation energy is greater in paramagnetic region than in ferrimagnetic region. As its voltage-crrent characteristics is similar to that semiconductors, the temperature-sensitive ferrite is expeated to be appied in the area of power electronics.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.11a
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• pp.112-113
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• 2007

ZnS:Cn,Cl phosphor was coated by solid-gel reaction with $SiO_2$ outside layer. The effect of $Cu^{2+}$ -doping concentration has been investigated on the luminescence characteristics of ZnS:Cn,Cl blue-green phosphors for inorganic electro luminescent device. Also, SiO2 coated layers' effect on luminescence characteristics. Evaluation of luminescence characteristics dependent on the synthesis conditions is important to get high-performance phosphors properties. EL and PL properties such as luminescence intensity and chromaticity of ZnS:Cn,Cl phosphors synthesized with different concentration of activator, $Cu^{2+}$, were analysed separately

• Proceedings of the Korean Magnestics Society Conference
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• 1999.04a
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• pp.90-91
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• 1999

• Korean Journal of Crystallography
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• v.16 no.2
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• pp.107-127
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• 2005

Five Cu(II) compounds were obtained from different copper salts with btp ligands, and their structures were determined by X-ray crystallography. The structure of coordination polymer 2 contains btp-bridged tetranuclear Cu(II) units weakly connected by nitrate ions, and the structure of a discrete Cu(II) molecule 1 contains acetates and btp ligands. With perchlorate anions, two btp ligands bridge Cu(II) ions to form a double zigzag chain 3, while a single zigzag chain 4 is created with sulfate anions. The reaction of $Cu(NO_{3})_{2}$ containing $NH_{4}PF_{6}$ with btp ligands also produced a polymeric compound 5 containing $Cu(H_{2}O)_{2}^{2+}$ and $Cu(NO_{3})_{2}$ units alternatively bridged by btp ligands with H-bonds between copper bonded water and nitrate oxygen atoms. Five Zn(II) compounds were obtained from different zinc salts with btp ligands, and the structures of polymeric compounds (6, 7 and 8) and monomeric compounds (9 and 10) were determined by X-ray crystallography. With nitrate, chloride and bromide anions, btp ligands bridge Zn(II) ions to form polymeric compounds (6, 7 and 8), but btp ligands coordinate to a Zn(II) ion to form monomeric complexes (9 and 10) with $PF_{6}^{-}$ and perchlorate anions. Four silver salts and btp ligands produced two kinds of structures, dinuclear 20-membered rings and one-dimensional zigzag chain depending on different anions. For $ClO_{4}^{-}$ and OTf anions, weak interactions between Ag(I) and anions make dinuclear 20-membered rings construct polymeric compounds (11 and 13). For $PF_{6}^{-}$ anion, there are also weak interactions between Ag(I) and $F(PF_{6}^{-})(12)$, but they do not construct a polymeric compound. For $O_{2}CCF_{3}^{-}$ anion, btp ligands bridge Ag(I) atoms to make one-dimensional zigzag chain (14), and there are also interactions between Ag(I) and anions.

• Solar Energy
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• v.17 no.3
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• pp.51-57
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• 1997

Cu-doped ZnTe thin films have been grown by hot-wall evaporation. The electrical conductivity of the intrinsic ZnTe film was of p-type and as low as $10^{-6}({\Omega}{\cdot}cm)^{-1}$. As the doped Cu concentration was increased, the electrical conductivity was increased. up to $10^2({\Omega}{\cdot}cm)^{-1}$, but the mobility was decreased a little. The heavily doped sample shows the metal-like electrical resistivity.

• Resources Recycling
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• v.14 no.1
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• pp.17-25
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• 2005

In order to recover valuable metals from the waste electronic scrap, bioleaching of Cu, Zn, Al, Co, Ni, Sn and Pb was carried out using Thiobacillus ferrooxidans as a leaching microorganism in a shaking flask. In a preliminary study, to obtain the data on the leaching of Cu, Zn, Al, Co and Ni, the metal leaching was accomplished using metal powers instead of electronic scrap. The leaching percentaga of Cu, Zn, Co, Al and Ni powers was reduced with the increase of metal power concentration in solution. Below the metal concentration of 0.5 g/L, more than 85% of Cu, Co and Zn powers was leached out. At the electronic scrap concentration of 100 g/L, Thiobacillus ferrooxidans were able to leach more than 90% of the available Cu and Co while Al, Zn and Ni were able to leach less than 40%. Pb and Sn were not detected in the leachate. Pb was precipitated as PbSO$_4$, whereas Sn precipitated probably as SnO.

• Resources Recycling
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• v.12 no.6
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• pp.13-18
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• 2003

The initial NiCuZn synthetic ferrite were acquired from thermally decomposing the metal nitrates Fe($NO_3$)$_3$ㆍ$9H_2$O, Zn($NO_3$)$_2$ㆍ$6H_2$O, Ni($NO_3$3)$_2$ㆍ $6H_2$O and Cu(NO$_3$)$_2$ㆍ $3H_2$O at 1$50^{\circ}C$ for 24 hours and was calcined at $500^{\circ}C$. Each of those was pulverized for 3 and 9 hours in a steel ball mill and was sintered between $700^{\circ}C$ and $1,000^{\circ}C$ for 1 hour, and then their microstructures and magnetic properties were examined. We could make the initial specimens chemically bonded in liquid at the temperature as low as $150 ^{\circ}C$, by using the melting points less than $ 200^{\circ}C$ of the metal nitrates instead of the mechanical ball milling, then narrowed a distance between the particles into a molecular level, and thus lowed sintering temperature by at least $200 ^{\circ}C$ to $300^{\circ}C$ Their initial permeability was 50 to 490 and their saturation magnetic induction density and coercive force 2,400G and 0.3 Oe to 1.2 Oe each, which were similar to those of NiCuZn ferrite synthesized in the conventional process.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.543-543
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• 2013

Thin-film transistors (TFTs) based on oxide semiconductors have been regarded as promising alternatives for conventional amorphous and polycrystalline silicon TFTs. Oxide TFTs have several advantages, such as low temperature processing, transparency and high field-effect mobility. Lots of oxide semiconductors for example ZnO, SnO2, In2O3, InZnO, ZnSnO, and InGaZnO etc. have been researched. Particularly, zinc-tin oxide (ZTO) is suitable for channel layer of oxide TFTs having a high mobility that Sn in ZTO can improve the carrier transport by overlapping orbital. However, some issues related to the ZTO TFT electrical performance still remain to be resolved, such as obtaining good electrical contact between source/drain (S/D) electrodes and active channel layer. In this study, the bottom-gate type ZTO TFTs with staggered structure were prepared. Thin films of ZTO (40 nm thick) were deposited by DC magnetron sputtering and performed at room temperature in an Ar atmosphere with an oxygen partial pressure of 10%. After annealing the thin films of ZTO at $400^{\circ}C$ or an hour, Cu, Mo, ITO and Ti electrodes were used for the S/D electrodes. Cu, Mo, ITO and Ti (200 nm thick) were also deposited by DC magnetron sputtering at room temperature. The channel layer and S/D electrodes were defined using a lift-off process which resulted in a fixed width W of 100 ${\mu}m$ and channel length L varied from 10 to 50 ${\mu}m$. The TFT source/drain series resistance, the intrinsic mobility (${\mu}i$), and intrinsic threshold voltage (Vi) were extracted by transmission line method (TLM) using a series of TFTs with different channel lengths. And the performances of ZTO TFTs were measured by using HP 4145B semiconductor analyzer. The results showed that the Cu S/D electrodes had a high intrinsic field effect mobility and a low effective contact resistance compared to other electrodes such as Mo, ITO and Ti.