• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07b
• /
• pp.605-608
• /
• 2002

In order to improve the microwave dielectric properties of ZnO+$TiO_2$ ceramic systems, we studied the relations among microstructures, phases, and microwave dielectric properties at various mole ratio and sintering temperatures. The optimum composition was found to be 0.2ZnO+0.8$TiO_2$ when sintered at $1100^{\circ}C$, at which we could obtain following results: $Q{\times}f_o$ = 22,500 GHz, ${\varepsilon}_r$ = 73, and $\tau_f=+210ppm/^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.16 no.5
• /
• pp.397-403
• /
• 2003

Microwave dielectric properties of (1-x)ZnW $O_4$-xTi $O_2$ ceramic systems were investigated with calcination temperatures and Ti $O_2$ contents. The ZnW $O_4$ ceramic could be suitably sintered at 1075$^{\circ}C$ and showed the dielectric constant of 13.6, quality factor(Q$\times$ $f_{O}$value) of 22,000 and temperature coefficient of resonant frequency($\tau$$_{f}$) of -65$\pm$2ppm/$^{\circ}C$. Increasing the amount of Ti $O_2$ in the range of 0.25 to 0.45 mol, the dielectric constant and $\tau$$_{f}$ increased due to the role of Ti $O_2$ but the quality factor decreased due to the increase of phase boundaries. The 0.7ZnW $O_4$-0.3Ti $O_2$ ceramic showed the dielectric constant of 19.8, qualify factor(Q$\times$ $f_{0}$) of 20,000 and $\tau$$_{f}$ of -3$\pm$1ppm/$^{\circ}C$.>.EX>.>.>.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.29 no.12
• /
• pp.781-785
• /
• 2016

With trend of the miniaturization and the high-functionalizing of mobile communication system, low-loss microwave dielectric materials are widely used for high frequency communication components. These dielectric materials should be co-sintered with highly electric-conducting metal such as silver or copper for high-frequency and thick film process application. Sintering temperature of $Ca(Li_{1/3}Nd_{2/3})_{0.2}Ti_{0.8}]O_{3-{\delta}}$, which has excellent dielectric properties such as ${\varepsilon}_r$ above 40, quality factor ($Q{\cdot}f_0$) above 16,000 GHz, and TCF (temperature coefficient of resonant frequency) of $-20{\sim}-10ppm/^{\circ}C$, is reported as high as $1,175^{\circ}C$, so it could not be co-sintered with silver or copper. Therefore in this study, low-temperature melting glasses of Zn-B-O and Zn-B-Si-O systems were added to $Ca[(Li_{1/3}Nb_{2/3})_{0.8}Ti_{0.2}]O_{3-{\delta}}$ to lower its sintering temperature under $900^{\circ}C$ without losing excellency of dielectric properties. With 15 weight % of Zn-B-Si-O glass and sintered at $875^{\circ}C$, specimen showed density of $4.11g/cm^3$, ${\varepsilon}_r$ of 40.1, $Q{\cdot}f_0$ of 4,869 GHz, and TCF of $-5.9ppm/^{\circ}C$. With 15 weight % of Zn-B-O glass and sintered at $875^{\circ}C$, specimen showed density of $4.14g/cm^3$, ${\varepsilon}_r$ of 40.4, $Q{\cdot}f_0$ of 7,059 GHz, and TCF of $-0.92ppm/^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.19 no.9
• /
• pp.855-861
• /
• 2006

Sinterability and microwave dielectric properties of $xZWO_{4}-(1-x)TiO_{2}$ ceramic systems with zinc-borosilicate glass and $TiO_{2}$ contents for LTCC(Low Temperature Co-fired Ceramics) were investigated. The addition of $3{\sim}10\;wt%$ ZBS glass ensured the sinterability below $900^{\circ}C$. In general, increasing ZBS glass content seemed to enhance the sinterability, but the quality factor($Qxf_{0}$) significantly decreased due to the formation of an excessive liquid and second phases. As for the addition of $TiO_{2}$, the dielectric constant(${\varepsilon}_{r}$) and temperature coefficient of resonant frequency(${\tau}_{f}$) showed to increase, while the quality factor($Qxf_{0}$) did not show an apparent change. The composition of $0.7xZnWO_{4}-0.3TiO_{2}$ ceramics sintered at $900^{\circ}C$ with 5 wt% ZBS glass demonstrated 21.6 in dielectric constant(${\varepsilon}_{r}$), 14,800 in quality factor($Qxf_{0}$), and $+5\;ppm/^{\circ}C$ in temperature coefficient of resonant frequency(${\tau}_{f}$).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.21 no.3
• /
• pp.227-231
• /
• 2008

In this study, in order to improve the electrical properties of low temperature sintering piezoelectric ceramics, $[0.05Pb(Zn_{1/2}W_{1/2})-0.07Pb(Mn_{1/3}Nb_{2/3})-0.088Pb(Zr_{0.48}Ti_{0.52})]O_3$(abbreviated as PZW-PMN-PZT) ceramic systems were fabricated using $Bi_2O_3$, CuO and $Li_2CO_3$ as sintering aids and then their piezoelectric and dielectric properties were investigated according to the amount of $Li_2CO_3$ and post-annealing process. Post-annealing process enhanced all physical properties except for mechanical quality factor (Qm). 0.2 wt% $Li_2CO_3$ added and post-annealed specimen showed the excellent values suitable for low loss piezoelectric actuator application as follow: the density = 7.86 $g/cm^3$ electromechanical coupling factor (kp) = 0.575, piezoelectric constant $d_{33}$ = 370 pC/N, dielectric constant ($\varepsilon_r$) = 1546, and mechanical quality factor (Qm) = 1161, respectively.