• Title/Summary/Keyword: ZnGa2O4:Mn,O

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Effects of heat treatment and substrates on luminescent characteristics of $ZnGa_O_4:Mn$ thin film phosphor (열처리조건과 기판이 $ZnGa_O_4:Mn$ 박막 형광체의 발광특성에 미치는 영향)

  • Chung, Sung-Mook;Kim, Young-Jin
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.05a
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    • pp.181-184
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    • 2004
  • The green emitting phosphor, $ZnGa_2O_4:Mn$ thin film with spinel structure were deposited by rf magnetron sputtering. Thin film phosphors were heat-treated in nitrogen, vacuum and air atmosphere, respectively. The effects of the substrates, heat-treatment conditions and the sputtering parameters were investigated. The growing behavior and luminescent properties of thin films depend on the crystallinity of the substrates. The Ga/Zn atomic ratios and luminescent characteristics were dependent on the annealing conditions.

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Photoluminescent Properties of $\textrm{Zn}_{2}\textrm{SiO}_{4}$: Mn Green Phosphors doped with Ga (Ga 도핑된 $\textrm{Zn}_{2}\textrm{SiO}_{4}$: Mn 녹색 형광체의 발광특성)

  • Park, Eung-Seok;Jang, Ho-Jeong;Jo, Tae-Hwan
    • Korean Journal of Materials Research
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    • v.8 no.9
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    • pp.860-864
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    • 1998
  • We investigated the photoluminescence and the crystalline properties with Ga doping concentrations (0-12 mol%) in $\textrm{Zn}_{1.98}\textrm{Mn}_{0.02}\textrm{SiO}_{4}$ green phosphors prepared by the solid state reaction. The photoluminescence was improved by a doping of Ga element in $\textrm{Zn}_{1.98}\textrm{Mn}_{0.02}(\textrm{Si_{1-x}\textrm{Ga}_{x})\textrm{O}_{4}$ phosphors which showed the highest emission intensity and good color purity in the doping concentration of x=0.08. The emission intensity of $\textrm{Zn}_{1.98}\textrm{Mn}_{0.02}(\textrm{Si_{1-x}\textrm{Ga}_{x})\textrm{O}_{4}$(x= 0.08) phosphors was increased to 7 times with increasing the sintering temperatures from $1100^{\circ}C$ to $1400^{\circ}C$, showing the improved crystalline quality. The decay time was not affected by Ga doping concentrations with constant values around 24ms. It was found from SEM and PSA analyses that the phosphors were composed of a large number of small grains around 1-3$10\mu\textrm{m}$ with a small amounts of agglomerated particles above $10\mu\textrm{m}$.

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Cathode Luminescence Characteristics of $ZnGa_2O_4$ Phosphors with the doped activator (활성제 첨가에 따른 $ZnGa_2O_4$ 형광체의 발광특성)

  • Hong, Beom-Joo;Lee, Seung-Kyu;Kim, Kyung-Hwan;Park, Yong-Seo;Choi, Hyung-Wook
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.11a
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    • pp.301-302
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    • 2005
  • The $ZnGa_2O_4$:Cr phosphor was synthesized through solid-state reactions at the various molar ratio of Cr from 0.002 % to 0.01 %. The XRD patterns show that the Cr-doped $ZnGa_2O_4$ has a (311) main peak and a spinel phase. Also the emission wavelength shills from 510 to 705 nm in comparison with $ZnGa_2O_4$:Mn when Cr is doped in $ZnGa_2O_4$. These results indicate that $ZnGa_2O_4$ phosphors hold promise for potential applications in field-emission display devices with high brightness operating in full color regions.

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Effect of $Mg^{2+}$ co-doping on luminescent properties of $ZnGa_2O_4:Mn^{2+}$

  • Singh, Binod Kumar;Bartwal, Kunwar Singh;Ryu, Ho-Jin
    • Journal of the Semiconductor & Display Technology
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    • v.6 no.4
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    • pp.29-32
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    • 2007
  • Zinc gallate, $ZnGa_2O_4:Mn^{2+}$ co-doped with different concentrations of $Mg^{2+}$ (0.001- 0.5 mol%) was prepared by solid state synthesis method. These compositions were investigated for their photoluminescence and cathodoluminescence properties. The optimized composition $Zn_{0.990}Mg_{0.005}Ga_2O_4:Mn_{0.005}$ shows higher luminescence intensity compared to the parent phosphor. The intense green emission peak was found at 504 nm. The $Mg^{2+}$ doping does not affect much the decay time. It remains <10 ms for these compositions which make them potential candidate for application in TV screens.

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