• Korean Chemical Engineering Research
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• v.46 no.6
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• pp.1081-1086
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• 2008

QDs-LEDs(quantum dot light emitting device) should contain well-organized arrays of QDs on an electron transport layer. Thin films of CdSe/ZnS core-shell QDs were successfully fabricated on $TiO_2$ substrates by using PDMS stamp and micro contact printing method. 2-Carboxyethylphosphonic acid(CAPO) and 1,6-hexanedithiol(HDT) were employed as molecular linkers in assembling CdSe/ZnS core-shell QDs with high-density and uniform array. The CAPO increased the binding strength between the QDs and the substrates, and the HDT induced the strong inter-particle attractions of assembled QDs. The assembling properties of QDs thin films were characterized by SEM, AFM, optical microscope and photoluminescence spectroscope(PL).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.368-368
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• 2007

Zinc oxide (ZnO) has drawn much interest as a potential transparent conducting oxide (TCO) for applying to solar cell and front electrode of electro-luminescent devices. For the enhancement of electrical property of TCOs, dopant introduction and hybridization with conductive nanoparticles have been investigated. In this work, ZnO films were formed on glass substrate by using photochemical solution deposition of Ag nanoparticles dispersed or various metal (Ag, Cd, In, or Sn) contained photosensitive ZnO solutions. The usage of photosensitive solution permits us to obtain a micron-sized direct patterning of ZnO film without using conventional dry etching procedure. The structural, optical, and electrical characteristics of ZnO films with the introduction of metal dopants with/without Ag nanoparticles have been investigated to check whether there is a combined effect between metal dopants and Ag nanoparticles on the characteristics of ZnO film. The phase formation and crystallinity of ZnO film were monitored with X-ray diffractometer. The optical transmittance measurement was carried out using UV-VIS-NIR spectrometer and the electrical properties such as sheet resistance and conductivity were observed by using four-point probe.

• Journal of Powder Materials
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• v.14 no.3 s.62
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• pp.180-184
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• 2007

The material design and synthesis are of important to modem science and technology. Here, we report the synthesis of multifunctional nanomaterials with different properties: feroelecties $YMnO_3$ and multiferroic materials such as $CoFe_2O_4-YMnO_3,\;Fe_3O_4-YMnO_3,\;CoFe_2O_4-Cd_{0.85}Zn_{0.15}S,\;and\;Fe_3O_4-Cd_{0.85}Zn_{0.15}S$ nano-composites by using a chemical synthesis process. These results provide a simple and convenient synthesis process to produce multifunctional nanocomposites.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.164-164
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• 2003

UV 발광소자 재료로서 유망한 ZnO film을 ALE법으로 증착하고 photoluminescence특성을 조사하였다. Zn소스로서 DEZn(Diethylzinc)를, 산소 소스로서 DI water를 사용하였고 $N_2$ gas로서 챔버내에 주입된 소스물질을 purge하였다. ALE 공정온도 범위인 17$0^{\circ}C$와 CVD 반응온도 범위인 40$0^{\circ}C$로 ZnO 박막을 증착하고 이 시편을 산소 분위기에서 600-100$0^{\circ}C$의 온도로 1시간 동안 열처리하였다. 그리고 He-Cd laser를 사용하여 photoluminescence를 측정하였다. 17$0^{\circ}C$와 40$0^{\circ}C$ 에서 증착된 시편 모두 as-grown 상태에서는 거의 발광특성을 나타내지 못하였으나 후열처리를 거치면서 발광특성을 나타내었고 열처리 온도가 높을수록 발광강도가 증가하였다. 40$0^{\circ}C$에서의 증착된 시편의 경우는CVD반응이 발생하여 Zn-Zn결합이 많이 생성되어 열처리 온도가 증가하여도 발광강도가 약하였고 가시광 영역의 발광 또한 크게 증가하였으며 17$0^{\circ}C$에서 증착된 시편의 경우는 열처리 온도가 증가할수록 UV영역의 발광강도만이 크게 증가하였으며 가시광 영역의 발광은 거의 증가하지 않았다.

• Korean Journal of Soil Science and Fertilizer
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• v.47 no.1
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• pp.41-47
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• 2014

Agricultural soils surrounding mine areas in South Korea are often contaminated with multiple metals such as Cd, Pb and Zn. It poses potential risks to plants, soil organisms, groundwater, and eventually human health. The aim of this study was to examine the changes in phytoavailability of Cd, Cu, Pb and Zn after application with calcined eggshell (CES; 0, 1, 3, and 5% W/W) in an agricultural soil contaminated by mine tailings. The contents of Cd, Cu, Pb and Zn in soils were 8.79, 65.4, 1602, and $692mgkg^{-1}$ (aqua regia dissolution), respectively. The experiments were conducted with lettuce (Lactuca sativa L. var. longifolia) grown under greenhouse conditions during a 30-d period. $NH_4NO_3$ solution was used to examine the mobile fraction of these metals in soil. The application of CES dramatically increased soil pH and inorganic carbon content in soil due to CaO and $CaCO_3$ of CES. The increased soil pH decreased the mobile fraction of Cd, Pb, Zn: from 3.49 to < $0.01mgkg^{-1}$ for Cd, from 79.4 to $1.75mgkg^{-1}$ for Pb, and from 29.6 to $1.13mgkg^{-1}$ for Zn with increasing treatment of CES from 0 to 5%. In contrast, the mobile fraction of Cu was increased from 0.05 to $3.08mgkg^{-1}$, probably due to the formation of soluble $CuCO_3{^0}$ and Cu-organic complex. This changes in the mobile fraction resulted in a diminished uptake of Cd, Pb and Zn by lettuce and an increased uptake of Cu: from 4.19 to < $0.001mgkg^{-1}$ dry weight (DW) for Cd, from 0.78 to < $0.001mgkg^{-1}$ DW for Pb, and from 133 to $50.0mgkg^{-1}$ DW for Zn and conversely, from 3.79 up to $8.21kg^{-1}$ DW for Cu. The increased contents of Cu in lettuce shoots did not exceed the toxic level of $>25mgkg^{-1}$ DW. The mobile contents of these metals in soils showed a strong relationship with their contents in plant roots and shoots. These results showed that CES effectively reduced the phytoavailability of Cd, Pb, and Zn to lettuce but elevated that of Cu in consequence of the changed binding forms of Cd, Cu, Pb, and Zn in soils. Based on these conclusions, CES can be used as an effective immobilization agent for Cd, Pb and Zn in contaminated soils. However, the CES should be applied in restricted doses due to too high increased pH in soils.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.195-198
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• 2004

ZnO films were Prepared by ultrasonic spray Pyrolysis on MgO substrates. The surface morphology and crystallinity were observed as a function of substrate temperature by SEM and XRD, respectively. PL properties of the ZnO films were studied by using Cd-He laser. UV light around 3.37 eV was pronounced in the PL spectra. The origin of the PL peak was discussed.

• Journal of the Korean Ceramic Society
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• v.37 no.5
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• pp.491-496
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• 2000

Single phae Pb(Mg1/3Nb2/3)O3-based solid solutions, the Mg2+ of which are replaced by 20mol% of Ni2+, Zn2+, Cd2+, and the Pb2+ of which are replaced by 0∼20 mol% of La3+, were synthesized and their ordering structures of B-site cations were investigated by XRD and TEM. The B'-site cations (Mg2+, Ni2+, Zn2+, Cd2+) are disordered while these B'-site cations and the B"-site cations (Nb5+) are nonstoichiometrically 1:1 ordered within the ordered nano-domains dispersed in the Nb5+-rich disordered matrix. The charge imbalance between the B'-rich ordered nano-domains and the B"-rich disordered matrix are compensated by the doping of electron donor such as La3+, which enhances the degree of nonstoichiometric 1:1 ordering. For a given La3+ content, the degree of nonstoichiometric 1:1 ordering increases as the average ionic size difference between the B'-and B"-site cations increases, Ni2+

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.20 no.7
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• pp.6-13
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• 2006

Tin doped indium oxide(ITO) and Al doped zinc oxide(ZnO:Al) films, which are widely used as a transparent conductor in optoelectronic devices, were prepared by using the capacitively coupled DC magnetron sputtering method. ITO and ZnO:Al films with the optimum growth conditions showed each resistivity of $1.67{\times}10^{-3}[{\Omega}-cm],\;2.2{\times}10^{-3}[{\Omega}-cm]$ and transmittance of 89.61[%], 90.88[%] in the wavelength range of the visible spectrum. The two types of 5 inch-PDP cells with ZnO:Al and ITO transparent electrodes were made under the same manufacturing conditions. The PDP cell with ZnO:Al film was optimally operated in the mixing gas rate of Ne(base)-Xe(8[%]), and at gas pressure of 400[Torr]. It also shows the average measured brightness of $836[cd/m^2]$ at voltage range of $200{\sim}300$[V]. Luminous efficiency, one of the key parameter for high brightness and low power consumption, ranges from 1.2 to 1.6[lm/W] with increasing frequency of ac power supplier from 10 to 50[Khz]. The brightness and luminous efficiency are lower than those with ITO electrode by about 10[%]. However, these values are considered to be enough for the normal operation of PDP TV.

• Journal of the Korean Vacuum Society
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• v.13 no.3
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• pp.103-108
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• 2004

High-quality ZnO films were grown on sapphire (001) substrates by the atomic layer epitaxy (ALE) technique using DEZn as a Zinc precusor and $H_2O $ as an oxidant at both $170^{\circ}C$ and $400^{\circ}C$ which are in the ALE and the CVD process temperature ranges, respectively. The films were annealed in an oxygen atmosphere in the temperature range from 600 to 100$0^{\circ}C$ for an hour and then investigate photoluminescence (PL) properties using He-Cd laser. PL intensity tends to increases as the annealing temperature increase for both the annealed ZnO films grown at $170^{\circ}C$ and $400^{\circ}C$ , while PL did not nearly occur at the as-deposited ones. The PL intensity of the ZnO film grown at $400^{\circ}C$ is low after it is annealed at high temperature owing to a large number of Zn-Zn bonds although it has increased in the visible light wavelength region after annealing. In contrast the PL intensity has increased significant in the visible light region after annealing

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.153-153
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• 2006

ZnO 박막은 II-VI족 화합물 반도체로서 상온에서 3.37eV 의 넓은 밴드갭을 가지고 있을 뿐만 아니라 GaN(28meV) 보다 상온에서 큰 엑시톤 결합 에너지(60meV)와 열 안정성을 가지고 있다. 특히 ZnO를 base로 한 2차원의 화합물 (MgZnO, CdZnO 그리고 MgO) 반도체 물질은 UV LED, 생 화학 센서와 투명전극 등으로 응용이 가능하다. ZnO/MgZnO 양자우울 구조의 양자제한 효과로 인한 엑시톤 결합에너지와 전기적 광학적 특성 향상으로 광전자 소 자 제작이 가능하다. 그렇지만, Zn-Mg 상평형도에서 ZnO 내에 Mg 고용도가 상온에서 열역학적으로 4at% 이하 이고, 또한 ZnO와 MgO는 각각 우르짜이트 구조와 면심입방 구조를 가지기 때문에 Mg 함량용 높이는데 어려움이 있다. 이러한 문제점을 해결하기 위해 열처리를 함으로써 MgZnO 박막 내에 Mg 함량의 증가와 결정성 향상으로 고품질의 광전자 소자 제작을 가능하게 했다. 본 실험에서는 RF 마그네트론 스퍼터링 장비로 MgZnO 박막 성장 후 Si 기판위에 성장된 박막의 결정성 향상과 MgZnO 내의 Mg 함량 변화를 관찰하기 위해 성장된 박막에 대한 열처리 효과를 연구 하였다.