• Journal of Plant Biology
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• 제17권4호
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• pp.158-162
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• 1974

Some ecological attributes of perennial plants and Pb contamination were analyzed for study plots near an entrance of Nevade Test Site at Mercury Valley, Nye County, Nevada. The surface of the desert pavement soil was composed of stones (1 to 4cm diameter). The underside of each stone was coated with coarse and fine sand (about 90%). The profiles of soil were constituted with the A-horizon and C-horizon only. The soil pH at the plots ranges from 7.6 to 8.5, C/N was 13 and cation exchange capacity showed 15me/100g. Nine species and 42 number of individuals were found in all plots. Franseria dumosa and Larrea divaricata were dominant species. The discrete clumps of vegetation were consisted of 9 species of common perennials and these were covered about 25% on desert pavement, on the other words, bare area without vegetation was about 75%. The size and spacing of the plants was irregular. Community coefficient as comparison between shrub species in these study area and those in near the low elevation desert indicated a low degree of similarity. Density, cover and productivity in the study plots as compared with those in the nearest study areas in Mercury Valley showed a higher value. The soils in the studied area involved high heavy metal contents in the plant tissue was higher than those of its soil. The leavds of Lycium andersonii tended to accumulate more Zn and Mo than those of the other species. Larrea divaricata leaves accumulated very high leaves of Fe and Ephedra nevadensis were generally high in Mn. Lead contamination was apparent in foliage of desert vegetation collected alongside the roadway, reflecting the variation in traffic volume. Lead contents greater than fifteen-fold of normal (low traffic) were found in plant foliage alongside the heavily traveled roadway. Lead content of old foliage by the heavily traveled roadway was as much as 129 ppm but that of new foliage 17 ppm only.

• 대한기계학회논문집B
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• 제33권11호
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• pp.840-848
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• 2009

In the boiling heat transfer mechanism, CHF(critical heat flux) is the significantly important parameter of the system. So, many researchers have been struggling to enhance the CHF of the system in enormous methods. Recently, there were lots of researches about enormous CHF enhancement with the nanofluids. In that, the pool boiling CHF in nanofluids has the significantly increased value compared to that in pure water because of the deposition of the nanoparticle on the heater surface in the nanofluids. The aim of this study is the comparison of the effect of the nanoparticle deposited surface and the modified surface which has the similar morphology and made by MEMS fabrication. The nanoparticle deposited surface has the complex structures in nano-micro scale. Therefore, we fabricated the surfaces which has the similar wettability and coated with the micro size post and nano structure. The experiment is performed in 3 cases : the bare surface with 0.002% water-ZnO nanofluids, the nanoparticle deposited surface with pure water and the new fabricated surface with pure water. The contact angle, a representative parameter of the wettability, of the all 3 cases has the similar value about 0 and the SEM(scanning electron microscope) images of the surfaces show the complex nano-micro structure. From the pool boiling experiment of the each case, the nanoparticle deposited surface with pure water and the fabricated surface with pure water has the almost same CHF value. In other words, the CHF enhancement of the nanoparticle deposited surface is the surface effect. It also shows that the new fabricated surface follows the nanoparticle deposited surface well.

• 한국재료학회지
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• 제5권7호
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• pp.794-801
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• 1995

LCD 모듈을 위한 실장 기술인 Chip on Glass 공정 기술을 개발함에 있어 구동 IC와 기판d의 Al 전극을 연결하기 위하여 기존의 기술과의 연관성 및 공정의 연속성, 제조단가등을 고려하여 Pb-Sn 범프를 사용하고자 하였으며 이를 위해 Al 금속 박막위에 니켈 무전해 도금하는 방법을 연구 하였다. Al 전극에 무전해 니켈 도금하기 위해서는 광레지스트 차폐막을 손상하지 않는 전처리 방법이 필요하기 때문에 전처리 방법으로서 알칼리 아연산염 처리법과 불화물을 이용한 아연산염 처리법을 선택하여 실시하였다. 이 가운데 산성불화암모늄(NH$_4$HF)을 1.5 g/$\ell$ 함유하고 황산아연(ZnSO$_4$)을 100 g/$\ell$ 함유한 산성 아연산염 용액에서는 광레지스트 차폐막이 손상되지 않았으며 처리시간을 적절히 조절함으로써 알루미늄 박막상에 선택적으로 니켈 무전해 도금을 할 수 있었다. 아연산염 응액중의 첨가제와 무전해 도금액 중의 억제제인 Thiourea는 도금층의 평활도를 높이는 역할을 하였다. 또한 아연산염 처리를 하기 전에 산세 처리를 함으로써 도금층의 균일성을 향상시킬 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 일렉트렛트 및 응용기술
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• pp.108-111
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• 2002

CIGS film has been fabricated on soda-lime glass, which is coated with Mo film. by multi-source evaporation process. The films has been prepared with thickness of 1.0 ${\mu}m$, 1.75${\mu}m$, 2.0${\mu}m$, 2.3${\mu}m$, and 3.0${\mu}m$. X-ray diffraction analysis with film thickness shows that CIGS films exhibit a strong (112) preferred orientation. Furthermore. CIGS films exhibited distinctly decreasing the full width of half-maximum and (112) preferred peak with film thickness. Also, The film's microstructure, such as the preferred orientation, the full width at half-maximum(FWHM), and the interplanar spacing were examined by X-ray diffraction. The preparation condition and the characteristics of the unit layers were as followings ; Mo back contact DC sputter, CIGS absorber layer : three-stage coevaporation, CdS buffer layer : chemical bath deposition, ZnO window layer : RF sputtering, $MgF_2$ antireflectance : E-gun evaporation

• 한국전기전자재료학회논문지
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• 제17권5호
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• pp.486-491
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• 2004

Dimensionally stable anode(DSA) can be used for the hydro-metallurgy of non-ferrous metals like as Zn, and the electrolysis of sea water. MnO$_2$ electrode satisfies the requirements of DSA, and has a good cycle life and a low overpotential for oxygen evolution. MnO$_2$ electrodes based on Ti matrix were prepared by using thermal decomposition method and also MnO$_2$ was coated on Ti and Pb matrix with DMF and PVDF compositions. The MnO$_2$ electrodes prepared by thermal decomposition method had very weak adhesive strength onto Ti matrix and MnO$_2$ layer was removed out so that electrochemical properties for MnO$_2$ were not investigated. The viscosity of solvent used as a binder of MnO$_2$ Powder increased with the increasing PVDF contents. The thickness of the MnO$_2$ layer on Pb matrix in DSA, which was prepared with 5 times dipping at the solution mixed with PVDF : DMF = 1 : 9, was 150${\mu}{\textrm}{m}$. When the ratio of PVDF to MnO$_2$ was lower than 1 : 6, the Pb electrode didn't show any reaction irrespective of the concentrations of DMF. However, When the ratio of PVDF to MnO$_2$ was higher than 1: 6, the Pb electrode showed constant current reactions and homogeneous cyclic voltammetry even though at a high cycle. The reason for the high current and homogeneous cyclic voltammetry is the good catalytic reactions of MnO$_2$ powder in electrode.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.341-341
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• 2012

Recently, oxide semi-conductor materials have been investigated as promising candidates replacing a-Si:H and poly-Si semiconductor because they have some advantages of a room-temperature process, low-cost, high performance and various applications in flexible and transparent electronics. Particularly, amorphous indium-gallium-zinc-oxide (a-IGZO) is an interesting semiconductor material for use in flexible thin film transistor (TFT) fabrication due to the high carrier mobility and low deposition temperatures. In this work, we demonstrated improvement of flexibility in IGZO TFTs, which were fabricated on polyimide (PI) substrate. At first, a thin poly-4vinyl phenol (PVP) layer was spin coated on PI substrate for making a smooth surface up to 0.3 nm, which was required to form high quality active layer. Then, Ni gate electrode of 100 nm was deposited on the bare PVP layer by e-beam evaporator using a shadow mask. The PVP and $Al_2O_3$ layers with different thicknesses were used for organic/inorganic multi gate dielectric, which were formed by spin coater and atomic layer deposition (ALD), respectively, at $200^{\circ}C$. 70 nm IGZO semiconductor layer and 70 nm Al source/drain electrodes were respectively deposited by RF magnetron sputter and thermal evaporator using shadow masks. Then, IGZO layer was annealed on a hotplate at $200^{\circ}C$ for 1 hour. Standard electrical characteristics of transistors were measured by a semiconductor parameter analyzer at room temperature in the dark and performance of devices then was also evaluated under static and dynamic mechanical deformation. The IGZO TFTs incorporating hybrid gate dielectrics showed a high flexibility compared to the device with single structural gate dielectrics. The effects of mechanical deformation on the TFT characteristics will be discussed in detail.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2018년도 춘계학술대회 논문집
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• pp.44-44
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• 2018

칼라도장강판은 금속 제품의 제품화 공정 중에 도장 공정을 생략함으로 경제적이며, 제조공정 중 발생할 수 있는 VOCs(Volatile Organic Compounds)의 배출 염려가 없어 건축 및 가전 산업에 다용되고 있다. 칼라도장강판은 용융아연도금강판(GI), 전기아연도금강판(EGI), 용융알루미늄아연합금도금강판 등이 기재로 적용되고 있으며, 최근 마그네슘 성분이 첨가되는 고내식 도금강판 개발과 함께 고내식 도금강판을 이용한 칼라도장강판의 개발 및 수요 발굴을 위한 연구가 활발하게 진행 중에 있다. 칼라강판의 구성은 일반적으로 도막 밀착성 확보를 위한 화성처리층, 기재와 도막간의 밀착성과 내식성 개선을 위한 하도층(primer layer), 가공성, 내오염성, 의장성 등의 기능성 부여를 위한 상도층(top layer)의 구조로 도장되어 있다. 도료는 가공성, 내오염성, 경도 등의 기능성이 우수한 폴리에스테르 수지계가 가장 폭넓게 사용되고 경화제로는 멜라민 화합물과 이소시아네이트 화합물이 널리 사용되고 있다. 칼라도장 강판은 1970년대 이후 본격적으로 보급되어 사용되기 시작하였으며, 화성처리층은 밀착성과 내식성이 우수한 크로메이트처리가 널리 사용되고, 하도층은 방청성이 우수한 크로메이트계 방청 안료를 함유시킨 도료가 일반적이다. 그러나, 전기전자 제품에 적용되는 칼라도장강판은 2006년에 RoHS 규제의 시행과 더불어 6가 크롬 사용 제한의 영향으로 크롬프리 화성처리가 일반화되어 적용되고 있으며, 그 동안 6가 크롬 제안이 유보적이었던 건축용 칼라도장강판 또한 크롬프리 화성처리층 및 크로메이트계 방청 안료의 하도층 적용을 회피하고 있는 추세이다. 이에 따라, 고내식 합금도금강판을 기재로 사용하고 기존의 화성처리층과 하도층에 크롬프리 수지를 적용하는 연구개발이 활발하게 진행 중에 있다. 본 연구에서는 마그네슘이 첨가된 고내식 합금도금강판으로 Al-Mg-S i강판과 용융 Zn-Al-Mg 합금도금강판에 기존의 상용화 공정에서 사용되는 크롬계 및 크로프리 화성처리 적용 칼라도장강판에 대한 내식성 등 칼라도장강판의 특성에 대해 발표한다.

• 한국의학물리학회지:의학물리
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• 제13권4호
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• pp.229-233
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• 2002

CdZnTe 검출기를 제작하고 CT/SPECT 조합영상 시스템에 설치하여 엑스선 및 감마선검출기로서의 응용가능성을 타진해 보았다. 검출기의 크기는 10$\times$10$\times$5 ㎣ 이었다. 양극은 4$\times$4 픽셀로 설계하였으며 각 픽셀의 크기는 $1.5\times$l.5 $\textrm{mm}^2$ 이었다. 음극은 Au로 전극을 만들어 주었다. 시스템의 성능을 조사하기 위해서 방사선촬영용 분해능팬텀과 호프만 뇌 팬텀을 사용하였다. X선 영상에서 고광자방출율을 만족시키기 위해서 shapping time은 50ns 로 하었으며, 3$\times$$10^{5}$ counts/s 까지 선형성이 유지되었다. Tc-99m의 140 keV 감마선에 대한 에너지 분해능은 50 ㎱와 2 $\mu\textrm{s}$ shaping time을 걸어주었을 때 각각 10.4%와 5.3%이었다. CT와 SPECT의 공간분해능은 각각 1 mm와 9 mm 이었다. 광피이크 효율은 50 ㎱와 2 $\mu\textrm{s}$일 때 각각 41.0%와 72.5%이었다.

• 한국정보통신학회:학술대회논문집
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• 한국정보통신학회 2015년도 추계학술대회
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• pp.1109-1112
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• 2015

소자장치가 없는 함정의 경우 탈자 시에 지구자계와 반대방향으로 수직자화를 부여하여 수중에서 수직방향의 자계가 발생하지 않도록 한다. 탈자 시에 수직자화를 부여하는 탈자방법으로는 Flash D가 있어나 수직자화의 예측이 어렵다. 본 논문에서는 Flash D와는 달리 바이어스 자계를 인가하여 수직방향으로 자화를 형성하는 것에 대해 검토하였다. 이용된 시편은 두께 0.15mm의 아연도금 강판을 이용하여 함정의 선수에서 선미까지의 형상을 고려하여 원형, 삼각, 사각형의 형태를 가진다. FEM해석을 통해 시편형상에 따른 자계신호의 차이를 구하였고 인가자계에 의한 잔류자화특성곡선을 실험을 통해 구하였다. 바이어스자계를 수평 및 수직으로 각각 인가하여 잔류자화에 의한 자계신호를 측정하였다. 시편에 인가하는 자계는 파형발생기를 이용하여 솔레노이드 코일에 전류를 흘려 발생시켰으며 수직바이어스자계는 솔레노이드 코일 아래에 사각 코일을 설치하여 발생시켰다. 신호측정은 자계센서를 이용하였다. 이 실험을 통해 수직 및 수평 바이어스 자계는 시편에 수직 및 수평자화를 각각 형성시켰으며 수직자화는 수직바이어스 자계와 선형적인 관계를 가져 함정에 형성되는 수직자화를 예측할 수 있음을 알았다.

• 한국재료학회지
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• 제13권4호
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• pp.259-265
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• 2003

For the aim of thin microwave absorbers used in mobile telecommunication frequency band, this study proposed a high permittivity dielectrics(λ/4 spacer) coated with ITO thin films of 377 $\Omega$/sq(impedance transformer). High frequency dielectric properties of ferroelectric ceramics, electrical properties of ITO thin films and microwave absorbing properties of ITO/dielectrics were investigated. Ferroelectric materials including $BaTiO_3$(BT), 0.9Pb($Mg_{1}$3/Nb$_{2}$3/)$O_3$-0.1 $PbTiO_3$(PMN-PT), 0.8 Pb (Mg$_{1}$3/$Nb_{2}$3/)$O_3$-0.2 Pb($Zn_{1}$3$_Nb{2}$3/)$O_3$(PMN-PZN) were prepared by ceramic processing for high permittivity dielectrics,. The ferroelectric materials show high dielectric constant and dielectric loss in the microwave frequency range. The microwave absorbance (at 2 ㎓) of BT, 0.9PMN-0.1PT, and 0.8PMN-0.2PZN were found to be 60%(at a thickness of 3.5 mm), 20% (2.5 mm), and 30% (2.5 mm), respectively. By coating the ITO thin films on the ferroelectric substrates with λ/4 thickness, the microwave absorbance is greatly improved. Particularly, when the surface resistance of ITO films is closed of 377 $\Omega$/sq, the reflection loss is reduced to -20 ㏈(99% absorbance). This is attributed to the wave impedance matching controlled by ITO thin films at a given thickness of high permittivity dielectrics of λ/4 (3.5 mm for BT, 2.5 mm for PMN-PT and PMN-PZN at 2 ㎓). It is, therefore, successfully proposed that the ITO/ferroelectric materials with controlled surface resistance and high dielectric constant can be useful as a thin microwave absorbers in mobile telecommunication frequency band.