• E2M - 전기 전자와 첨단 소재
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• 제8권4호
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• pp.400-405
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• 1995

ZnO films have been grown easily with the conventional thermal evaporation method on SiO$\_$2/ coated Si wafers. Anhydrous zinc acetate has been used as evaporation source. Zinc-acetate was directly heated in the laboratory-made brass boat. Zinc-acetate was sublimed at the boat temperature of about 220.deg. C. The substrates were heated to 600.deg. C with home made tantalium heater. Oxygen has been flowed into the deposition chamber to change the partial pressure of oxygen. X-ray diffraction patterns showed all the films to be amorphous. The films deposited at high oxygen pressure exhibit higher resistivity than films at low pressure. Energy dispersive spectroscopy(EDS) and rutherford backscattering spectrometry(RBS) were conducted on the films to reveal the composition of the ZnO films.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.703-706
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• 2006

Zinc oxide nanocrystals are attractive candidates for a solution-processable semiconductor for high performance thin film field effect transistors. We have studied ZnO thin film transistor fabricated by solution process and have improved $V_{th}$ by controlling the ZnO ink additives. Synthesized ZnO nanoparticles of 30nm were dispersed in solvent to make the ZnO ink. ZnO ink was spin coated on silicon wafer and after heat treatment electrodes were patterned.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.56-56
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• 2008

ZnO Oxide TFT with organic dielectric was prepared. ZnO thin film as active channel was prepared by plasma enhanced atomic deposition technique. Organic dielectric was spin coated on the gate metal. The structure of prepared TFT is bottom gate type and top contact structure. The characterization of oxide TFT was performed. We obtained the mobility of $0.7cm^2$/Vs, the threshold voltage of -14V, and the on-off ratio of $10^4$. We also obtained good output characterization with solid saturation.

• Corrosion Science and Technology
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• 제10권6호
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• pp.194-198
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• 2011

This is the first release of an interim report on the development of coating technology of Zn-Mg alloy layers on steel strip by EML-PVD (electromagnetic levitation - physical vapor deposition) process in an air-to-air type continuous PVD pilot plant. It intends to introduce a basic principle of the EML-PVD process together with the high speed PVD pilot plant built in Posco. Due to the agitation effect provided by the high frequency induction coil, simultaneous evaporation of Zn and Mg from a droplet could produce alloy coating layers with Mg content of 6% to 12% depending on the composition of the droplet inside the coil. For its superior corrosion resistance, Zn-Mg alloy coated steel would be a very promising material for automotive, electrical appliances, and construction applications.

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 1998년도 특별강연 및 추계학술발표 개요집
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• pp.303-304
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• 1998

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2009년도 춘계학술대회 논문집
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• pp.220-220
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• 2009

• 한국레이저가공학회:학술대회논문집
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• 한국레이저가공학회 2001년도 춘계학술발표대회 논문개요집
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• pp.16-21
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• 2001

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2001년도 춘계연구발표회 논문개요집
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• pp.146-147
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• 2001

• 한국주조공학회지
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• 제17권6호
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• pp.592-597
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• 1997

The microstructure and tensile properties of Mg-Zn-Ca and Mg-Zn-Mn-Ca alloys have been investigated. The alloys were obtained by melting in a low carbon crucible coated with boron nitride under an Ar gas atmosphere to prevent oxidation and combustion. The Mg alloy melt was cast into the metallic mold at room temperature, and cooling part was located at the bottom of mold. The phase formed during solidification of the Mg-Zn-(Mn) alloys containing 0.5%Ca is $Ca_2Mg_6Zn_3$. The yield strength and ultimate tensile strength of the alloys increased with increasing Zn content, but the ductility did not change with increasing Zn content. The addition of Mn improves the yield strength and ultimate tensile strength of the alloys, but the ductility did not change. Tensile fracture of the alloys revealed brittle failure, with cracking along the $Ca_2Mg_6Zn_3$ phase. The variation of stress with strain obeyed the relationship of the ${\sigma}=K{\varepsilon}^n$.

• 한국전기전자재료학회논문지
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• 제23권3호
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• pp.222-227
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• 2010

ZnO nanorods array have been grown on the seed crystal coated Si(100) substrate by hydrothermal method. The growth, structural and optical properties of ZnO nanorods array were investigated with a variation of precursor concentration from 0.01 M to 0.04 M. The array density of grown ZnO nanorods per same area was increased with increasing the concentration of precursor solution. Vertically aligned ZnO nanorods with hexagonal wurtzite structure have highly preferred c-axis orientation along (002) lattice plane. Especially, ZnO nanorods array developed from 0.04 M precursor solution showed a diameter of about 85 nm and length of 1.2 {\mu}m$ without any crystallographic defects. The photoluminescence spectra of ZnO nanorods from heavier precursor concentration exhibited stronger UV emission around 380 nm corresponding with near-band-edge emission.