• 제목/요약/키워드: Zn-coated

검색결과 366건 처리시간 0.025초

아연코팅 강판의 CO2 레이저용접시 인프로세스 모니터링을 위한 측정신호와 용접결함과의 관련성 연구 (Study on the Relationship Between Emission Signals and Weld Defect for In-Process Monitoring in CO2 Laser Welding of Zn-Coated Steel)

  • 김종도;이창제
    • 대한기계학회논문집A
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    • 제34권10호
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    • pp.1507-1512
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    • 2010
  • 본 연구에서는 조선용 6mm 아연코팅강판의 $CO_2$ 레이저 겹치기 용접시 발생하는 유기 플라즈마를 마이크로폰과 포토다이오드로 측정하였다. 이때 겹치기 갭간극에 따른 용접조건을 RMS한 신호와 비교 분석하였다. 이를 통해 아연증발량이 증가함에 따라 RMS값도 증가하였으며, 겹침부의 조건에 따라 결함 발생시 RMS의 급격한 변화도 확인할 수 있었다. 또한 용접조건에 따른 Raw signal의 FFT값을 구한 후, 이때 구해진 주파수값을 밴드폭으로 설정하여 Raw signal을 필터링한 뒤의 RMS값을 용접비드와 대응하여 필터링하지 않은 RMS와의 차이점도 비교 분석하였다. 이를 통해 기존의 방법들보다 신뢰성 높은 In-process 모니터링이 가능함을 확인하였다.

ZnS:Cu,Cl 형광체의 특성에 미치는 원자층 증착 초박막 HfO2의 영향 (Effect of Ultrathin Film HfO2 by Atomic Layer Deposition on the Propreties of ZnS:Cu,Cl Phosphors)

  • 김민완;한상도;김형수;김혁종;김휴석;김석환;이상우;최병호
    • 한국재료학회지
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    • 제16권4호
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    • pp.248-252
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    • 2006
  • An investigation is reported on the coating of ZnS:Cu,Cl phosphors by $HfO_2$ using atomic layer deposition method. Hafnium oxide films were prepared at the chamber temperature of $280^{\circ}C$ using $Hf[N(CH_3)_2]_4\;and\;O_2$ as precursors and reactant gas, respectively. XPS and ICP-MS analysis showed the surface composition of coated phosphor powder was hafnium oxide. In FE-SEM analysis, the surface morphology of uncoated phosphors became smoother and clearer as the number of ALD cycle increased from 900 to 1800. The photoluminescence intensity for coated phosphors showed $7.3{\sim}13.4%$ higher than that of uncoated. The effect means that the reactive surface is uniformly coated with stable hafnium oxide to reduce the dead surface layer without change of bulk properties and also its absorptance is almost negligible due to ultrathin(nano-scaled) films. The growth rate is about $1.1{\AA}/cycle$.

Highly Luminescent (Zn0.6Sr0.3Mg0.1)2Ga2S5:Eu2+ Green Phosphors for a White Light-Emitting Diode

  • Jeong, Yong-Kwang;Cho, Dong-Hee;Kim, Kwang-Bok;Kang, Jun-Gill
    • Bulletin of the Korean Chemical Society
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    • 제33권8호
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    • pp.2523-2528
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    • 2012
  • Green phosphors $(Zn_{1-a-b}M_aM^{\prime}_b)_xGa_yS_{x+3y/2}:Eu^{2+}$ (M, M' = alkali earth ions) with x = 2 and y = 2-5 were prepared, starting from ZnO, MgO, $SrCO_3$, $Ga_2O_3$, $Eu_2O_3$, and S with a flux $NH_4F$ using a conventional solidstate reaction. A phosphor with the composition of $(Zn_{0.6}Sr_{0.3}Mg_{0.1})_2Ga_2S_5:Eu^{2+}$ produced the strongest luminescence at a 460-nm excitation. The observed XRD patterns indicated that the optimized phosphor consisted of two components: zinc thiogallate and zinc sulfide. The characteristic green luminescence of the $ZnS:Eu^{2+}$ component on excitation at 460 nm was attributed to the donor-acceptor ($D_{ZnGa_2S_4}-A_{ZnS}$) recombination in the hybrid boundary. The optimized green phosphor converted 17.9% of the absorbed blue light into luminescence. For the fabrication of light-emitting diode (LED), the optimized phosphor was coated with MgO using magnesium nitrate to overcome their weakness against moisture. The MgO-coated green phosphor was fabricated with a blue GaN LED, and the chromaticity index of the phosphor-cast LED (pc-LED) was investigated as a function of the wt % of the optimized phosphor. White LEDs were fabricated by pasting the optimized green (G) and the red (R) phosphors, and the commercial yellow (Y) phosphor on the blue chips. The three-band pc-WLED resulted in improved color rendering index (CRI) and corrected color temperature (CCT), compared with those of the two-band pc-WLED.

$ZnO/TiO_2$ 박막 제작과 유전율 특성 (Electric Permittivity Properties and $ZnO/TiO_2$Thin Film Fabrication)

  • 김창석;최창주;이우선;오무송;김태성;김병인
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 하계학술대회 논문집
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    • pp.290-294
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    • 2001
  • In this study, ZnO is evaporated to be coated on n-type Si wafer substrate. Refractive coefficient of thin film that is evaporating TiO$_2$ onto ZnO increases linearly as thickness is getting thinner to have high value and high angle and it satisfies theoretical equation I(x)=Io exp (-$\alpha$x) theory that represents the strength of photon energy advancing through ZnO thin film. And dielectric constant of TiO$_2$ thin film evaporated onto ZnO is high and $\varepsilon$$_2$ is smaller than $\varepsilon$$_1$. The specimen TiO$_2$ thin film evaporated onto ZnO has much higher dielectric constant when photon energy is increased.

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Al2O3 Nano-Coating by Atomic Layer Deposition

  • Min Byung-Don;Lee Jong-Soo;Kim Sang-Sig
    • Transactions on Electrical and Electronic Materials
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    • 제4권3호
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    • pp.15-18
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    • 2003
  • Aluminum oxide ($Al_2O_3$) materials were coated conformally on ZnO nanorods by atomic layer deposition (ALD). The ZnO nanorods were first synthesized on a Si(100) substrate from ball-milled ZnO powders by a thermal evaporation procedure. $Al_2O_3$ films were then deposited on these ZnO nanorods by ALD at a substrate temperature of $300^{\circ}C$ using trimethylaluminum (TMA) and distilled water ($H_2O$). Transmission electron microscopy (TEM) and high-resolution transmission electron microscopy (HRTEM) images of the deposited ZnO nanorods revealed that amorphous $Al_2O_3$ cylindrical shells surround the ZnO nanorods. These TEM images illustrate that ALD has an excellent capability to coat any shape of nanorods conformally.

2차원 ZnO 나노벽 구조 제조 (Fabrication of 2-Dimensional ZnO Nanowall Structure)

  • 김영정;;김영철;안승준;민준원
    • 한국세라믹학회지
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    • 제42권7호
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    • pp.521-524
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    • 2005
  • ZnO 2-D nanowall structure with around 100 nm thickness, which is composed of tens of nm scale ZnO single crystals, was fabricated through the low temperature chemical solution growth method. Electro Chemical Deposition (ECD) technique was applied to attach the ZnO seed crystals on ITO coated glass substrate. The ZnO nanowall structure was grown in the 0.015 mol$\%$ of aqueous solution of zinc nitrate and hexamethenamine at 60$^{\circ}C$ for 20 - 40 h. The nanowall structure depends on the ECD condition or the applied voltage and duration time. The nanowall shows a photoluminescence around 550 - 700 nm spectrum range.

PLD-Furnace로 증착시킨 금촉매를 이용한 ZnO 나노와이어 합성 (ZnO Nanowires Fabricated by Pulsed Laser Deposition using Gold Catalyst)

  • 손효정;전경아;이상렬
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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    • pp.5-6
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    • 2005
  • ZnO nanowlres (NWs) were fabricated using Au as catalyst for a method combining laser ablation cluster formation and vapor-liquid-solid (VLS) growth. The target used in synthesis was pure ZnO ceramics. Two different substrates were used; (0001)-oriented sapphires and Au-coated sapphires. The Au thin film was deposited by thermal evaporation and the thickness was about 50 ${\AA}$. ZnO NWs were only formed in case of that used catalyst metal. Field effect scanning electron microscopic (FESEM) investigation showed that the average diameter of ZnO NWs was about 70 nm and the typical lengths varied from $3{\sim}4{\mu}m$.

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SiO2/ZnS:Cu/ZnS Triplex Layer Coatings for Phosphorescence Enhancement

  • Zhang, Wen-Tao;Lee, Hong-Ro
    • 한국표면공학회지
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    • 제41권4호
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    • pp.169-173
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    • 2008
  • The objective of this study is to coat the $SiO_2$ layer uniformly on the ZnS:Cu phosphors by using Sol-Gel method. From results of SEM micrographs observation, XRD and XPS analysis, it could be confirmed that $SiO_2$ layer was relatively well coated on ZnS:Cu particles. $Ag_2S$ was used as a decoding chemical to analyze the dense and uniform coating performance of $SiO_2$ layer on phosphor particles. It could be concluded that phosphors synthesized from our two step replacement method showed strong blue peak comparing to other method and rather weak green peak also. Obtained particle size of phosphors were about 20m diameter. Luminescence properties of the phosphors were examined by photoluminescence spectra at the excitation wavelength of 270 nm.

Fabrication and characterization of ternary compound ZnCdS nanowires

  • Lee, Dong-Jin;Son, Moon-A;Kang, Tae-Won
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.57-57
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    • 2010
  • Self assembled $Zn_{x-1}Cd_xS$ nanowires, synthesized on a Indium tin oxide coated glass substrate with low composition of Cd as x=0.09, were fabricated non-precursor via a co-evaporation method using of solid sources of CdS and ZnS. We studies that ZnCdS nanowires are dislocation-free and the single crystalline hexagonal wurtzite structure showed by transmission electron microscopy and selected area electron diffraction pattern. Cathode luminescence spectra showed an near band edge peak at 383nm originated from nanowires at 80K and 300K. Core level spectra of the Cd 3d, Zn 2p and S 2p in the ZnCdS nanorods were obtained by x-ray photoelectron spectroscopy. Prepared ZnCdS nanorods showed different shape with increase of substrate temperature at the growth.

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