• Journal of the Korean Ceramic Society
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• v.40 no.10
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• pp.943-948
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• 2003

The microstructure and electrical characteristics of Zn-Pr-Co-Cr-Dy oxides-based varistors were investigated with Dy$_2$ $O_3$ content in the range of 0.0∼2.0 ㏖%. As Dy$_2$ $O_3$ content is increased, the average grain size was decreased in the range of 18.2∼4.6 $\mu\textrm{m}$ and the ceramic density was decreased in the range of 5.49∼4.64 g/㎤. The incorporation of Dy$_2$ $O_3$ markedly enhanced the nonlinear properties of varistors more than 9 times in nonlinear exponent, compared with the varistor without Dy$_2$ $O_3$ The varistor with 0.5∼1.0 ㏖% Dy$_2$ $O_3$ exhibited the high nonlinearity, in which the nonlinear exponent is above 55 and the leakage current is below 1.0 ${\mu}\textrm{A}$. The donor concentration and the density of interface states were decreased in the range of (4.66∼0.25)${\times}$10$\^$18//㎤ and (5.70∼1.39)${\times}$10$\^$12//$\textrm{cm}^2$, respectively, with increasing Dy$_2$ $O_3$ content. The minimum dielectric dissipation factor of 0.0023 was obtained for 0.5 ㏖% Dy$_2$ $O_3$, but further addition of Dy$_2$ $O_3$ increased it.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.9
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• pp.924-929
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• 2004

The microstructure, electrical and dielectric characteristics of $ZnO-{Pr}_6{O}_11-{CoO}-{Dy}_2{O}_3$-based varistors were investigated without and with various metal oxide additives(NiO, MgO, Cr$_2$O$_3$). The average grain size decreased in the range of 18.4 $\backsim$ 11.5 $\mu$m, in order of NiO\longrightarrowMgO\longrightarrow{Cr}_2{O}_3$ and the density decreased in the range of 5.62 \backsim 5.33 $g/{cm}^3$ in order of NiO\longrightarrowCr$_2$O$_3$\longrightarrowMgO. While, the nonlinear exponent increased In the range of 19.8$\backsim$67.4 in order of NiO\longrightarrowMgO\longrightarrow${Cr}_2{O}_3$ and the leakage current decreased in the range of 25.6 $\backsim$ 1.2 $\mu$A in order of NiO\longrightarrow${Cr}_2{O}_3$\longrightarrowMgO. Among all varistors, the Cr$_2$O$_3$-added varistor exhibited the highest nonlinearity, with a nonlinear exponent of 67.4 and a leakage current of 1.2 $\mu$A. Furthermore, this varistor exhibited the lowest dielectric dissipation factor of 0.0407.

• Journal of the Korean Ceramic Society
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• v.40 no.11
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• pp.1067-1072
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• 2003

The electrical stability of the varistor ceramics composed of Zn-Pr-Co-Cr-Dy oxides-based varistors was investigated at 0.0∼2.0 mol% Dy$_2$O$_3$ content under DC accelerated aging stress. The ceramic density was increased up to 0.5 mol% Dy$_2$O$_3$ whereas further addition of Dy$_2$O$_3$ decreased sintered ceramic density. The density sailently affected the stability due to the variation of conduction path. The nonlinearity of varistor ceramics was greatly improved above 45 in the nonlinear exponent and below nearly 1.0 ${\mu}$A by incorporating Dy$_2$O$_3$. Under 0.95 V$\_$1mA/150$^{\circ}C$/24 h stress state, the varistor ceramics doped with 0.5 mol% Dy$_2$O$_3$ exhibited the highest electrical stability, in which the variation rates of varistor voltage, nonlinear exponent, and leakage current were -0.9%, -14.4%, and +483.3%, respectively. The variation rates of relative permittivity and dissipation factor were +7.1% and +315.4%, respectively. The varistors with further addition of Dy$_2$O$_3$ exhibited very unstable state resulting in the thermal runaway due to low density.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.625-628
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• 2002

The electrical properties of the praseodymium-based ZnO varistor ceramics, which are composed of Zn-Pr-Co-Cr-Dy oxides were investigated with $Dy_2O_3$ amount. The average grain size of varistor ceramics was greatly decreased from 18.2 to 4.6 pm with increasing $Dy_2O_3$ amount. The calculated nonlinear exponent$({\alpha})$ in varistor ceramics without $DY_2O_3$ was only 4.9, whereas the a value of the varistors with $DY_2O_3$ was abruptly increased in the range of 48.8 to 58.6. In particular, the maximum value of a was obtained by doping of 1.0 mol% $DY_2O_3$, reaching 58.6. The measured leakage current$(I_l)$ value in varistors without $DY_2O_3$ was $85.45{\mu}A$, whereas the $I_{\ell}$ value of the varistors with $DY_2O_3$ was very abruptly decreased in the range of 1.10 to $0.12{\mu}A$. In particular, the minimum value of $I_{\ell}$ was obtained by doping of 0.5 mol% $DY_2O_3$, reaching $0.12{\mu}A$. The tan $\delta$ varied in V-shape, with minimum 2.28% at 0.5 mol% $DY_2O_3$. The donor concentration and the density of interface states were decreased in the range of $(4.66{\sim}0.25){\times}10^{18}cm^3$ and $(5.70{\sim}1.39){\times}10^{12}/cm^2$, respectively, as $DY_2O_3$ amount is increased.