• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.490.1-490.1
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• 2014

The ZnO nanowire (NW)-based nanogenerators (NGs) can have rectifying current and potential generated by the coupled piezoelectric and semiconducting properties of ZnO by variety of external stimulation such as pushing, bending and stretching. So, ZnO NGs needed to enhance durability for stable properties of NGs. The durability of the metal electrodes used in the typical ZnO nanogenerators(NGs) is unstable for both electrical and mechanical stability. Indium tin oxide (ITO) is used as transparent flexible electrode but because of high cost and limited supply of indium, the fragility and lack of flexibility of ITO layers, alternatives are being sought. It is expected that carbon nanotube and Ag nanowire conductive coatings could be a prospective replacement. In this work, we demonstrated transparent flexible ZnO NGs by using CNT/Ag nanowire hybrid electrode, in which electrical and mechanical stability of top electrode has been improved. We grew vertical type ZnO NW by hydrothermal method and ZnO NW was coated with hybrid silicone coating solution as capping layer to enhance adhesion and durability of ZNW. We coated the CNT/Ag nanowire hybrid electrode by using bar coating system on a capping layer. Power generation of the ZnO NG is measured by using a picoammeter, a oscilloscope and confirmed surface condition with FE-SEM. As a results, the NGs using the CNT/Ag NW hybrid electrode show 75% transparency at wavelength 550 nm and small change of the resistance of the electrode after bending test. It will be discussed the effect of the improved flexibility of top electrode on power generation enhancement of ZnO NGs.

• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.118.2-118.2
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• 2011

In order to increase the energy conversion efficiency of dye-sensitized solar cells (DSSCs), we employed a counter electrode that was platinum coated using a doctor blade technique on synthesized ZnO nanostructures on fluorinedoped tin oxide (FTO). The ZnO nanostructures possessing high electrochemical activity and large surface area of the counter electrode were grown by a chemical bath deposition (CBD) method at various times, 2, 4, and 8 h. The efficiency of DSSC with the Pt-ZnO counter electrode was improved 7.01% (grown for 2 h), 7.63% (grown for 4 h), and 6.13% (grown for 8 h), respectively. Compared with a standard DSSC without ZnO nanostructures, whose efficiency was 6.27%, the energy conversion efficiency increased approximately 22% for the DSSC with the Pt-ZnO (grown for 4 h) electrode. It indicates that the Pt coated on the ZnO nanostructure improves the electrocatalytic activity of the counter electrode.

• Proceedings of the KIEE Conference
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• 2004.11a
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• pp.26-28
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• 2004

The primary role of ZnO arresters is to protect transmission and distribution equipments against lightning surges. The extremely nonlinear V-I characteristics of the ZnO arrester obviates the need for isolation gaps and consequently it is continuously connected to line voltage. For this reason, ZnO arresters are degraded with time in actual power systems. In this work, the characteristics of the luminous events caused between the ZnO block and electrodes according to the electrode area were investigated. As a result, the luminous events were effected by electrode area and the longer electrode areas were increased, the more luminous events were decreased. Also the reduction of luminous events was fumed up to the degraded ZnO arrester block.

• Journal of the Semiconductor & Display Technology
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• v.16 no.2
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• pp.44-48
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• 2017

We explain optical and electrical properties of top and bottom-emission structured alternating-current powder electroluminescent devices (ACPELDs) with Ga-doped ZnO(GZO) transparent electrode. The top-emission ACPELDs were layered as the metal electrode/dielectric layer/emission layer/top transparent electrode and the bottom-emission ACPELDs were structured as the bottom transparent electrode/emission layer/dielectric layer/metal electrode. The yellow-emitting ZnS:Mn, Cu phosphor and the barium titanate dielectric layers were layered through the screen printing method. The GZO transparent electrode was deposited by the sputtering, its sheet resistivity is $275{\Omega}/{\Box}$. The transparency at the yellow EL peak was 98 % for GZO. Regardless of EL structures, EL spectra of ACPELDs were exponentially increased with increasing voltages and they were linearly increased with increasing frequencies. It suggests that the EL mechanism was attributed to the impact ionization by charges injected from the interface between emitting phosphor layer and the transparent electrode. The top-emission structure obtained higher EL intensity than the bottom-structure. In addition, charge densities for sinusoidal applied voltages were measured through Sawyer-Tower method.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2009.10a
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• pp.177-179
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• 2009

In order to investigate the possible application of ZnO films as a transparent conducting oxide (TCO) electrode, ZnO:Al films were prepared by RF magnetron sputtering method. The effects of surface treatment and doping concentration on the structural and electrical properties of ZnO films were mainly studied experimentally. Five-inch PDP cells using either a ZnO:Al or indium tin oxide (ITO) electrode were also fabricated separately under the same manufacturing conditions. The luminous properties of both the transparent conducting oxide electrode were measured and compared with each other. By doping the ZnO target with 2 wt% of Al2O3, the film deposited at a chemical surface treatment resulted in the minimum resistivity of 8.5 _ 10_4 U-cm and a transmittance of 91.7%. And DBD surface treatment resulted in the minimum resistivity of 8.5 _ 10_4 U-cm and a transmittance of 91.7%. Although the luminance and luminous efficiency of the transparent conducting oxide electrode using ZnO:AI are lower than those of the cell with the ITO electrode by about 10%, these values are sufficient enough to be considered for the normal operation of TCO.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.08a
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• pp.94-97
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• 2003

This study uses ZnO thin film as a piezoelectric material and Pt as bottom electrode for FBAR (film bulk acoustic resonator) device. ZnO thin film and Pt were deposited by RF-magnetron sputtering method. ZnO thin film and Pt were oriented to c-axis. Top electrode Al was deposited by thermal evaporation. The membrane was formed of bulk micromachining. The FBAR was evaluated by XRD, SEM and electrical characterization. The resonant frequency was measured by HP 8753C Network Analyzer. A fabricated FBAR device exhibited a resonant frequency of 700 MHz ~ 1.5 GHz. When bottom electrode and top electrode thickness were fixed, the resonant frequency was increased as decreasing ZnO thin film thickness.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.4
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• pp.372-376
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• 2022

Since the ZnO varistor is a semiconductor device, the internal thermal distribution during the varistor operation is recognized as an important factor in the performance and deterioration of the varistor. For an optimal varistor structure design, the thermal runaway phenomenon during the varistor operation was interpreted using the Comsol 5.2 analysis program by a finite element analysis. The maximum temperature of the center measured in the cross section of the ZnO varistor was confirmed to increase as the temperature moved from the lower electrode to the center towards the upper electrode up to 572.6 K. The electrodes are thinned so that the influence of the Schottky barrier is not great. The heat gradient balance is determined to be improved when the electrode of the hybrid form is introduced. The thickness, density, pore distribution, impurity uniformity, and particle size of the ZnO varistor are required, and it is determined that the pyrolysis gradient will be improved regardless of the electrode thickness. When these results are applied to design the ZnO varistor, the optimal structure of the ZnO varistor can be obtained.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.8
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• pp.716-722
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• 2003

ZnO thin films were deposited on Al and Pt electrodes by an RF reactive sputtering system for the fabrication of FBAR (film bulk acoustic wave resonator), and the effect of thermal treatment temperature on their c-axis preferred orientation was investigated. SEM experiments show that columnar structure of ZnO thin films were grown with c-axis normal to electrode material, and XRD experiments show that both ZnO films were grown with (002) plane preferred orientation, but larger diffraction peak was observed with Pt electrode. The peak intensity increased with higher thermal treatment temperature, but c-axis preferred orientation was diminished. The surface roughness of Al thin film was higher than that of Pt, and these affect the surface roughness of ZnO film deposited on the electrode. Though the preferred orientation with respect to Pt(111) plane was improved with higher thermal treatment temperature, this could not improve the c-axis orientation of ZnO film.

• Korean Journal of Materials Research
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• v.23 no.11
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• pp.655-660
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• 2013

Photoelectrochemical cells have been used in photolysis of water to generate hydrogen as a clean energy source. A high efficiency electrode for photoelectrochemical cell systems was realized using a ZnO hierarchical nanostructure. A ZnO nanofiber mat structure was fabricated by electrospinning of Zn solution on the substrate, followed by oxidation; on this substrate, hydrothermal synthesis of ZnO nanorods on the ZnO nanofibers was carried out to form a ZnO hierarchical structure. The thickness of the nanofiber mat and the thermal annealing temperature were determined as the parameters for optimization. The morphology of the structures was examined by field-emission scanning electron microscopy, transmission electron microscopy, and X-ray diffraction. The performance of the ZnO nanofiber mat and the potential of the ZnO hierarchical structures as photoelectrochemical cell electrodes were evaluated by measurement of the photoelectron conversion efficiencies under UV light. The highest photoconversion efficiency observed was 63 % with a ZnO hierarchical structure annealed at $400^{\circ}C$ in air. The morphology and the crystalline quality of the electrode materials greatly influenced the electrode performance. Therefore, the combination of the two fabrication methods, electrospinning and hydrothermal synthesis, was successfully applied to fabricate a high performance photoelectrochemical cell electrode.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2000.05a
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• pp.735-738
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• 2000

The characteristics of wire electrical discharge machining (WEDM) are governed by many factors such as the power supply type, operating condition and electrode material. This work deals with the effect of wire electrode materials on the machining characteristics such as, metal removal rate, surface characteristics and surface roughness during WEDM A wire's thermal physical properties are melting point, electrical conductivity and vapor pressure. One of the desired qualities of wire is a low melting point and high vapor pressure to help expel the contaminants from the gap. They are determined by the mix of alloying elements (in the case of plain brass and coated wire) or the base core material(i.e. molybdenum). Experiments have been conducted regarding the choice of suitable wire electrode materials and influence of the properties of these materials on the machinability and surface characteristics in WEDM, the experimental results are presented and discussed from their metallurgical aspect. And the coating effect of various alloying elements(Au, Ag, Cu, Zn, Cr, Mn, etc.) to the Cu or 65-35 brass core on them was reviewed also. The removal rate of some coated wires are higher than that of 65-35 brass electrode wire because the wire is difficult to break due to the wire cooling effect of Zn evaporation latent heat and the Zn oxide on the surface is effective in preventing short circuit. The removal rate increases with increasing Zn content from 35, 40 and Zn coated wire