• 한국결정성장학회지
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• 제5권2호
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• pp.100-108
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• 1995

SOI구조를 얻기 위한 방법의 한가지인 ZMR공정에 있어서 열전달은 계면의 위치와 모양을 결정하는 중요한 역할을 한다. 본 연구에서는 SOI구조를 얻기 위한 ZMR공정중의 열전달 공정을 모사할 수 있는 의사정상상태 2차원 ZMR모델을 수립하였다. 본 모델은 복사, 전도 그리고 대류 열전달을 포함하며, 고/액 계면의 위치를 결정한다. 모델로부터 구한 수치해는 실리콘 기판의 용융부에서의 유동장, 전체 SOR구조에서의 온도장 그리고 실리콘 박막과 기판에서의 고/액 계면의 위치를 포함한다. 여러 공정 변수들의 변화에 따른 온도장과 계면의 형상과 폭의 변화를 알아보았다.

• Biomolecules & Therapeutics
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• 제21권2호
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• pp.161-169
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• 2013

The objective of this study was to enhance the oral bioavailability (BA) of zanamivir (ZMR) by increasing its intestinal permeability using permeation enhancers (PE). Four different classes of PEs (Labrasol$^{(R)}$, sodium cholate, sodium caprate, hydroxypropyl ${\beta}$-cyclodextrin) were investigated for their ability to enhance the permeation of ZMR across Caco-2 cell monolayers. The flux and $P_{app}$ of ZMR in the presence of sodium caprate (SC) was significantly higher than other PEs in comparison to control, and was selected for further investigation. All concentrations of SC (10-200 mM) demonstrated enhanced flux of ZMR in comparison to control. The highest flux (13 folds higher than control) was achieved for the formulation with highest SC concentration (200 mM). The relative BA of ZMR formulation containing SC (PO-SC) in plasma at a dose of 10 mg/kg following oral administration in rats was 317.65% in comparison to control formulation (PO-C). Besides, the $AUC_{0-24\;h}$ of ZMR in the lungs following oral administration of PO-SC was $125.22{\pm}27.25$ ng hr $ml^{-1}$ with a $C_{max}$ of $156.00{\pm}24.00$ ng/ml reached at $0.50{\pm}0.00$ h. But, there was no ZMR detected in the lungs following administration of control formulation (PO-C). The findings of this study indicated that the oral formulation PO-SC containing ZMR and SC was able to enhance the BA of ZMR in plasma to an appropriate amount that would make ZMR available in lungs at a concentration higher (>10 ng/ml) than the $IC_{50}$ concentration of influenza virus (0.64-7.9 ng/ml) to exert its therapeutic effect.

• 한국결정성장학회지
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• 제2권2호
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• pp.53-62
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• 1992

SOI구조 형성을 위항 대용융 재결정(ZMR) 공정에서 타원형의 반사경을 기울여 빔강도분포를 인위적으로 변화시켜 실리콘 박막을 재결정시켰다. 비대칭 선형가열 효과를 해석하기 위하여 전산모사를 행하여 응고계면 근처에서의 온도분포와 열구배 변화를 조사하였다. 상부집속열원의 경사각이 증가할수록 액상의 과냉도와 실리콘 박막내의 결함열 간격은 증가하였다. 주된 결함은 연속적인 아결정립계였고 결함밀도가 낮은 경우는 isolated threading dislocations만이 관찰되었다. 단면 TEM과 박막 XRD 분석결과 실리콘 박막은 (100) 집합조직을 갖는 단결정 박막으로 재결정되었음을 확인할 수 있었다.

• 자원환경지질
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• 제53권6호
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• pp.695-701
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• 2020

본 연구는 중성의 pH 조건에서 Fe, Mn, As이 포함된 복합오염수를 배출하는 광산배수의 수질특성을 모니터링하였다. 침출수를 처리하기 위해 모래와 석회석으로 이루어진 수직흐름반응조(VFR, Vertical Flow Reactor)와 제강슬래그와 석회석을 적용한 반응조(ZMR)로 구성된 현장파일럿 장치를 설치하여 약 6개월간 운영하였다. 광산배수 내 존재하는 Fe, Mn, As에 대한 현장파일럿 장치의 처리효율을 평가하였다. 중성의 알칼리 수질특성을 가진 D광산 침출수에 VFR와 ZMR 공정을 적용한 결과, pH와 알칼리도가 효과적으로 상승하여 Fe과 As가 99%이상 제거되었으며 Mn은 98%이상 제거하여 복합오염물질 처리가 가능함을 확인하였다. 본 연구결과를 통해 Fe, As, Mn이 포함된 소규모 광산배수에 자연정화기반의 공법이 적용가능함을 확인하였다.

• Journal of Microbiology and Biotechnology
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• 제31권5호
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• pp.696-704
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• 2021

Levan is an industrially important, functional biopolymer with considerable applications in the food and pharmaceutical fields owing to its safety and biocompatibility. Here, levan-type exopolysaccharide produced by Pantoea agglomerans ZMR7 was purified by cold ethanol precipitation and characterized using TLC, FTIR, ¹H, and ¹³C NMR spectroscopy. The maximum production of levan (28.4 g/l) was achieved when sucrose and ammonium chloride were used as carbon and nitrogen sources, respectively, at 35℃ and an initial pH of 8.0. Some biomedical applications of levan like antitumor, antiparasitic, and antioxidant activities were investigated in vitro. The results revealed the ability of levan at different concentrations to decrease the viability of rhabdomyosarcoma and breast cancer cells compared with untreated cancer cells. Levan appeared also to have high antiparasitic activity against the promastigote of Leishmania tropica. Furthermore, levan had strong DPPH radical scavenging (antioxidant) activity. These findings suggest that levan produced by P. agglomerans ZMR7 can serve as a natural biopolymer candidate for the pharmaceutical and medical fields.

• E2M - 전기 전자와 첨단 소재
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• 제7권4호
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• pp.331-340
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• 1994

Polysilicon on insulator has been recrystallized by zone melting recrystallization method with graphite strip heaters. Experiments are performed with non-seed SOI structures. When the capping layer thickness of Si$\_$3/N$\_$4//SiO$\_$2/ is 2.0.mu.m, grain boundaries are about 120.mu.m spacing and protrusions reduced. After the seed SOI films are annealed at 1100.deg. C in NH$\_$3/ ambient for 3 hours, the recrystallized silicon surface has convex shape. After ZMR process, the tensile stress is 2.49*10$\^$9/dyn/cm$\^$2/ and 3.74*10$\^$9/dyn/cm$\^$2/ in the seed edge and seed center regions. The phenomenon of convex shape and tensile stress difference are completely eliminated by using the PSG/SiO$\_$2/ capping layer. The characterization of SOI films are showed that the SOI films are improved in wetting properties. N channel SOI MOSFET has been fabricated to investigate the electrical characteristics of the recrystallized SOI films. In the 0.7.mu.m thickness SOI MOSFET, kink effects due to the floating substrate occur and the electron mobility was calculated from the measured g$\_$m/ characteristics, which is about 589cm$\^$2//V.s. The recrystallized SOI films are shown to be a good single crystal silicon.

• 한국재료학회지
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• 제2권3호
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• pp.180-190
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• 1992

ZMR공정에서 발생하기 쉬운 폴리실리콘의 엉김현상(agglomeration), 슬림, 그리고 실리콘기판이 국부적으로 녹는 현상 등을 방지하기 위한 방법과 재결정화된 박막의 질을 향상시키기 위하여 폴리실리콘과 보호 산화막(capping oxide)두계를 변화시킨 실험 결과를 서술한다. 폴리실리콘의 엉김현상은 폴리실리콘과 보호 산화막 그리고 폴리실리콘과 매몰 산화막(buried oxide)의 계면에서의 wetting각과 관계되는데, 엉김현상을 방지하기 위해서는 암모니아 가스 분위기에서 $1100^{\circ}$C, 3시간 동안 열처리하여 폴리실리콘과 보호 산화막 그리고 폴리실리콘과 매몰 산화막의 계면에 질소를 주입시키면 된다. 실리콘 기판의 뒷면이 국부적으로 녹아 SOI구조가 파괴되는 현상과 슬립은 실리콘 기판의 뒷면을 모래타격(sandblast)하여 약 $20{\mu}m$의 거칠기를 가지도록 했을때 방지할 수 있었다. 재결정화된 폴리실리콘의 두께가 두꺼워짐에 따라 재결정화된 박막에서 subboundary의 간격은 넓어지고, 재결정화된 실리콘 두께의 균일성은 보호 산화막이 두꺼울수록 향상된다. 폴리실리콘의 두께를 $1{\mu}m$로 하였을때 subboundary의 간격은 약 $70-120{\mu}m$정도였고 폴리실리콘의 두께가 $1{\mu}m$이고 보호산화막의 두께가 $2.5{\mu}m$일때, 재결정화 후 실리콘의 두게 균일도는 약 ${\pm}200{\AA}$정도였다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.412-414
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• 2004

We have developed nucleation control methods applicable to a zone-melting recrystallization excimer laser annealing process for poly-Si films. Ribbon-shaped Si grains of 2 ${\mu}m$-width were successfully aligned side by side by means of a comb-shaped beam, and we have successfully fabricated TFTs with channels formed in those grains. Electron mobility in the TFTs is as high as 677-$cm^2$/Vs.

• 대한전자공학회논문지
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• 제27권4호
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• pp.527-533
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• 1990

Zone-melting recrystallization (ZMR) system using two graphite heaters(a stationary sheet and a narrow movable bar) was constructed and implemented in recrystallization op Si films on insulating layers. The recystallized Si films were examined by Nomarski contrast optical microscopy after Dash etching, transmission electron diffraction pattern, and x-ray diffraction. With optimum conditions of process parameters(input powers of the bottom and upper heater, scanning speed of the upper heater, and the gap between sample and upper heater), the recrystallized Si layer has a (100) texture, but contains many subboundaries. The subgrains are misoriented by < 0.5\ulcorner and the average spacing between subboundaries is about 25\ulcorner.

• 전자공학회논문지A
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• 제32A권1호
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• pp.179-184
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• 1995

Phosphorous was deped in silicon thin films by Ion Mass Doping and Changes in the electrical resistance with respect tko heat treatments were investigated. SOI(Silicon On Insulator) thin films which contain few grain boundaries prepared by ZMR(Zone Melting Recrystallization) of polysilicon films, polysilicon films which have about 1500 $A^{\rarw}$ of grain size prepared by LPCVD at 625.deg. C, and amorphous silicon thin films prepared by LPCVD at low temperature were used as substrates and thermal behavior of phosphorous after RTA(Rapid Thermal Annealing) and furnace annealing was carefully studied. Amorphous thin films showed about 10$^{6}$ .OMEGA./ㅁbefore any heat treatment, while polycrystalline and SOI films about 10$^{3}$.OMEGA./¤. All these films, however, showed about 10.OMEGA./ㅁafter furnace annealing at 700.deg. C for 3hrs and RTA showed about the same trend. Films with grain boundaries showed a certain range of heat treatment which rendered increase of the electrical resistance upon annealing, which could not be observed in amorphous films and segregation of doped phosphorous by diffusion with annealing was thought to be responsible for this abnormal behavior.