• 한국재료학회지
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• 제15권8호
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• pp.548-553
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• 2005

Trivalent cerium$(Ce^{3+})$ activated YAG (yttrium aluminum garnet, $Y_3Al_5O_{12})$) thin films phosphor were deposited on quartz glass substrates by rf magnetron sputtering. The effects of sputtering parameters, annealing atmosphere, and substrates on growing behaviors and luminescent properties were investigated. The sputtering parameters were $O_2/(Ar+O_2)$ gas ratio, rf power, and deposition time. XRD (X-ray diffractometery) spectra exhibited that as-deposited films were amorphous, while they were transformed to the crystalline phases by post-annealing. The crystallinity and the atomic ratio strongly depended on the sputtering gas ratio $O_2/(Ar+O_2)$. High quality YAG:Ce thin films could be obtained at the gas ratio of $50\%$ oxygen. After annealing process, PL (Photoluminescence) spectra excited at 450nm showed a yellow single band at 550nm. The films deposited at the sputtering gas ratio of 50% oxygen exhibited the highest PL intensity.

• Nuclear Engineering and Technology
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• 제3권1호
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• pp.9-13
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• 1971

방사성 낙진에 의한 우리나라 식품의 오염도를 파악할 목적으로 우리나라의 우유중의 스트론튬-90의 양을 측정하였다. 스트론튬의 분석은 발연질산법에 의하였으며, 스트론튬 단위로 결과를 정리하기 위하여 칼슘의 함량도 동시에 정량하였다. 방사능의 측정은 $^{90}$ Sr＋$^{90}$ Y의 방사평형이 이루어진 후에 $^{90}$ Y의 방사능을 측정하였다. 액체 우유의 스트론튬-90의 함량이 가장 많았던 것은 1966년의 34.9 pCi$^{90}$ Sr/g.Ca이었으며, 1966년을 고비로 현저한 감소를 보여주고 있다. 분유의 스트론튬-90의 함량은 액체 우유와 같은 값을 보여 주고 있으며, 방사선 장해면에서 고려할때 안전한 함량임을 알 수 있다.

• 멤브레인
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• 제9권2호
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• pp.132-139
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• 1999

무기 flour로서 방사능물질과 반응하여 섬광을 일으키는 cerium activated ytrium silicate를 폴리설폰 고분자 구조내에 함침시킨 측정막을 제조하고, 이를 이용하여 방사성핵종인 $^3H$-cortisol 으로 오염된 실험실 바닥의 방사능 오염도를 측정하였다. 제조된 측정막을 이용하여 오염지역을 문지르고, 막에 함침된 flour와 오염지역으로부터 막으로 옮겨진 방사능 물질과의 직접 반응에 의해 나타난 섬광을 측정하여 방사성핵종의 양을 결정하였다. 유기 flour 가 용해되어 있는 섬광보조액(scintillation cocktail)의 도움을 필요로 하는 기존의 방사성핵종 측정방법에 비해, 측정막을 이용할 경우 오염도의 측정 효율을 유지하면서 전체적인 방사능 폐기물의 양산을 제어할 수 있는 효과를 거두었다. 한편, 탐지효과의 증대들 위해 시도된 디메틸포름아마이드를 이용한 측정막의 용매 처리는, 막 표면의 형상변화를 유도할 수있었으나, 방사성핵종에 대한 측정효율의 증대로는 귀결되지 않았다.

• 한국주조공학회지
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• 제27권5호
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• pp.198-202
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• 2007

In the present study, the high temperature mechanical properties and creep resistance of Mg-Zn-Y-Ca alloys has been investigated. The Mg-4Zn-0.8Y alloy consists of ${\alpha}$-Mg matrix and icosahedral quasicrystalline phase. Calcium addition into Mg-4n-0.8Y based alloy results in the formation of ${\tau}(Ca_{2}Mg_{6}Zn_{3})$ and $Mg_{2}Ca$ as the second solidification phases. Creep properties of the Mg-Zn-Y and Mg-Zn-Ca based alloys measured at applied stresses between 65 MPa and 85 MPa are significantly improved with adding calcium and yttrium, respectively. The improved creep resistance is due to the formation of thermally stable $Mg_{2}Ca$ phase.

• 대한화학회지
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• 제34권6호
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• pp.555-560
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• 1990

$YBa_2Cu_3O_{7-x}$ 초전도 필름을 초음파에 의한 aerosol spray 법을 이용하여 YSZ (yttria stabilized zirconia) 및 SrTi$O_3$의 (100) 결정면 위에 만들었다. 초전도상은 세 단계의 과정을 거쳐서 형성되었다 : (가) 이트륨, 바륨, 구리의 질산염을 화학 양론비로 섞어 만든 용액을 250$^{\circ}C$로 가열된 기질에 분무하여, (나) 형성된 필름을 공기 중에서 550$^{\circ}C$로 예열하고, (다) 흐르는 산소 분위기에서 950$^{\circ}C$로 소결한 뒤 노냉하였다. 필름의 저하을 dc four-point probe 법으로 측정하여 액체질소 온도 이상에서 초전도성을 확인하였다.

• 한국세라믹학회지
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• 제53권6호
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• pp.700-706
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• 2016

Etch rate, surface roughness and microstructure as plasma resistance were evaluated for six kinds of oxide glass with different compositions. Borosilicate glass (BS) was found to be etched at the highest etch rate and zinc aluminum phosphate glass (ZAP) showed a relatively lower etch rate than borosilicate. On the other hand, the etching rate of calcium aluminosilicate glass (CAS) was measured to be similar to that of sintered alumina while yttrium aluminosilicate glass (YAS) showed the lowest etch rate. Such different etch rates by mixture plasma as a function of glass compositions was dependent on whether or not fluoride compounds were formed on glass and sublimated in high vacuum. Especially, in view that $CaF_2$ and $YF_3$ with high sublimation points were formed on the surface of CAS and YAS glasses, both CAS and YAS glasses were considered to be a good candidate for protective coating materials on the damaged polycrystalline ceramics parts in semi-conductor and display processes.

• 대한기계학회논문집A
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• 제31권6호
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• pp.665-670
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• 2007

Alpha-phase alumina TGO(Thermally Grown Oxide) forms on the interface between zirconia top coat and bond coat of thermal barrier coating system for superalloys during exposure to high temperature over $1000^{\circ}C$. It is known to provide a good protection against hot corrosion and to cause surface failure such as rumpling and cracking due to difference in thermal expansion coefficient from the substrate metal and the lateral growth. Consequently, mechanical properties of the alumina TGO at the high temperature are the key parameters determining the integrity of TBC system. In this work, by using Fecralloy foils as the alumina forming substrate, creep tests and tensile tests have been performed with various TGO thicknesses$(h=0{\sim}4{\mu}m)$ and yttrium contents(0, 200ppm) at $1200^{\circ}C$. Displacement-time curves and load-displacement curves for each TGO thickness(h=1,2,..) were measured from the creep and tensile tests, respectively, and compared with the curves without TGO thickness(h=0). As the result, the intrinsic tensile and creep properties of TGO itself were determined.

• 반도체디스플레이기술학회지
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• 제18권3호
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• pp.72-76
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• 2019

A Q-switched diode-pumped neodymium-doped yttrium vanadate (YVO₄, λ =1064nm) laser was used for the direct patterning of indium tin oxide (ITO) films on glass substrate. During the laser direct patterning, the laser beam was incident on the two different directions of glass substrate and the laser ablated patterns were compared and analyzed. At a low scanning speed of laser beam, the larger laser etched lines were obtained by laser beam incident in reverse side of glass substrate. On the contrary, at a higher scanning speed, the larger etched pattern sizes were found in case of the beam incidence from front side of glass substrate. Furthermore, it was impossible to find no ablated patterns in some laser beam conditions for the laser beam from reverse side at a much higher scanning speed and repetition rate of laser beam. The laser beam is expected to be transferred and scattered through the glass substrate and the laser beam energy is thought to be also dispersed and much more influenced by the overlapping of each laser beam spot.

• 한국재료학회지
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• 제30권11호
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• pp.573-580
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• 2020

YAG (Yttrium Aluminum Garnet, Y₃Al₅O₁₂) has excellent plasma resistance and recently has been used as an alternative to Y₂O₃ as a chamber coating material in the semiconductor process. However, due to the presence of an impurity phase and difficulties in synthesis and densification, many studies on YAG are being conducted. In this study, YAG powder is synthesized by an organic-inorganic complex solution synthesis method using PVA polymer. The PVA solution is added to the sol in which the metal nitrate salts are dissolved, and the precursor is calcined into a porous and soft YAG powder. By controlling the molecular weight and the amount of PVA polymer, the effect on the particle size and particle shape of the synthesized YAG powder is evaluated. The sintering behavior of the YAG powder compact according to PVA type and grinding time is studied through an examination of its microstructure. Single phase YAG is synthesized at relatively low temperature of 1,000 ℃ and can be pulverized to sub-micron size by ball milling. In addition, sintered YAG with a relative density of about 98 % is obtained by sintering at 1,650 ℃.

• 한국세라믹학회지
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• 제44권5호
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• pp.151-154
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• 2007

Yttrium aluminum garnet, $Y_3Al_5O_{12}$ (YAG) is an extensively used solid-state laser host material. YAG nanocrystals were synthesized using low-temperature glycol method, a modified sol-gel method performed at low temperature that consists of a mixture of salts that are mostly nitrates in an aqueous media. Single-phase nanocrystalline YAG was obtained at $850^{\circ}C$, which is a much lower temperature than with other techniques such as a wet-chemical technique. The structural characterization is done by powder X-ray diffraction, scanning electron microscopy and transmission electron microscopy. A crystallite size range of 20-50 nm was observed for the materials prepared at $850-950^{\circ}C$.