• Journal of the Korean Ceramic Society
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• v.39 no.10
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• pp.988-993
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• 2002

Electrochemical cells for decomposing $NO_x$ were fabricated using a hydrothermally synthesized lanthanum stannate pyrochlore catalyst. Thick film of the catalyst on the YSZ electrolyte disk was produced by screen-printing a paste consisted of $La_2Sn_2O_7$ and YSZ powders. Direct current was applied to the electrochemical cell to promote an electrochemical catalytic decomposition of $NO_x$. $NO_x$ decomposition behavior of the rectant gas mixture ($NO_x$ 0.1%, $O_2$ 2%) was investigated at 700${\circ}C$ under atmosphere pressure using on-line gas chromatography and $NO_x$ analyzer. It was observed that microstructure of the catalyst layer significantly influences the electrocatalystic decomposition of $NO_x$.

• Korean Journal of Materials Research
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• v.4 no.5
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• pp.510-515
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• 1994

Yttria-stabilized zirconia(YSZ) films were prepared onto p-type (100) silicon wafer by a plasma-enhanced metallorganic chemical vapor deposition(PE MO CVD) processing involving the application of vapor mixture of tri(2.2.6.6-tetramethyl-3, 5-heptanate) yttrium$[Y(DPM)_3]$, zirconiumtriflouracethyla cetonate$(Zr(tfacac)_4$ and oxygen gas. The x-ray diffraction(XRD) and fourier transform infrared spectra(FT1R) results showed that the deposited YSZ films had a single cubic phase. $Y_2O_3$ content of YSZ film was analyzed by PIXE(partic1e induced x-ray emission). The experimental results by PIXE revealed that 12.lmol%, 20.4mol% and 31.6mol% $Y_2O_3$ could be obtained as the $Y(DPM)_3$ bubbling temperature varied at $160^{\circ}C, 165^{\circ}C$ and $170^{\circ}C$ respectively. The increase of $Y(DPM)_3$ bubbling temperature caused shifting flat band voltage to have a negative value.

• The Korean Journal of Ceramics
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• v.5 no.2
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• pp.131-136
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• 1999

Yttria stabilized zirconia(YSZ) films were deposited on porous NiO substrates and quartz plates by the thermal CVD using $ZrCl_4, YCl_3$ as precursors, and $O_2$ as a reactive gas at atmospheric pressure. The evaporation temperature of $ZrCl_4$ was varied from $250^{\circ}C$ to $550^{\circ}C$ while the temperatures of $YCl_3$ and the substrate were varied from $1000^{\circ}C$ to $1030^{\circ}C$. As the evaporation temperature of $ZrCl_4$ increased, the deposition rate of $ZrO_2$ decreased, contrary to our expectation. As a result of the decreased deposition rate of $ZrO_2$, the yttria content increase. The high evaporation temperature of $ZrCl_4$ makes the well-faceted crystal while the low evaporation temperature leads to the cauliflower-shaped structure. The dependence of the evaporation temperature on the growth rate and the morphological evolution was interpreted by the charged cluster model.

• Progress in Superconductivity and Cryogenics
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• v.6 no.3
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• pp.12-15
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• 2004

There are two major approaches to obtain texture template for HTS coated conductor (CC) ---IBAD and RABiTS. CC's with IBAD template showed both longer and higher Ic results so far. IBAD for CC began with YSZ, the processing of which is very slow compared to other processings needed for the fabrication of CC. Because of this very slow processing speed, IBAD with other materials such as Gd$_2$Zr$_2$O$_{7}$(GZO) and MgO have been developed. The processings of IBAD-GZO and IBAD-MgO are known to be up to 3times and 100 times. respectively, as fast as the processing of IBAD-YSZ. IBAD-MgO is very attractive in that the processing is very fast. IBAD-MgO also needs additional buffer layer(s). Many materials are being investigated to be used as a buffer layer on top of the MgO. BaZrO$_3$ (BZO) is a good candidate as the buffer layer on top of the IBAD-MgO because it is chemically stable and does not react with YBCO at high temperatures. It also has good lattice match with MgO. The BZO film has been deposited on single crystal MgO, and YBCO film was deposited on BZO/MgO to investigate the possibility of using BZO as both the buffer and capping layer of the CC.C.

• Journal of the Korean Ceramic Society
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• v.38 no.8
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• pp.724-731
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• 2001

스크린 인쇄법에 의해 Si 기판에 PZT 후막의 제조에 있어서 주요 문제점은 낮은 소결밀도 및 PZT 후막과 Si 기판과의 반응현상이다. 이러한 현상을 억제하기 위해 본 연구에서는 스크린 인쇄법 및 PZT sol-gel 처리법의 혼합된 방법을 채택하여 Pt/TiO$_2$/YSZ/SiO$_2$/Si(100) 기판에 Zr/Ti 비가 52/48인 PZT 후막을 제조하였으며, 소결온도에 따른 잔류분극(P$_{r}$), 유전상수($\varepsilon$$_{r}$) 및 압전상수(d$_{33}$)를 측정하였다. 인쇄된 PZT 후막에 졸 처리함으로써 단순히 인쇄된 후막에 비해 전기적 특성이 증진된 결과를 얻었다.다.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.322-325
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• 1999

We fabricated 18cm YBCO coated conductor comprising a YBCO superconducting film and CeO$_2$/YSZ/CeO$_2$ buffer films deposited on a biaxially textured Ni tape. For those film fabrications, we developed a new method, the cylindrical holder in a double chamber. This is alternative to the reel-to-reef method which is commonly tried to fabricate a long YBCO coated tape. We will discuss about the superconducting properties of the 18cm long YBCO coated tapes.

• Applied Chemistry for Engineering
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• v.3 no.3
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• pp.412-421
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• 1992

The superconducting thin films have shown a growing possibility for practical application in microelectronic fields in recent years. In this study, the high Tc superconducting Y-Ba-Cu-O thin films were prepared on various substrates by chemical vapor deposition method using organic metal chelates of $Y(thd)_3$, $Ba(thd)_2$, and $Cu(thd)_2$ as source materials. The deposition reactions were carried out on single crystalline MgO(100), YSZ(100), $SrTiO_3(100)$, and polycrystalline $SrTiO_3$ substrates. Deposition thickness of thin films was linearly increased with the increase of deposition time. It turned out that the Y-Ba-Cu-O thin films on MgO(100), YSZ(100), and $SrTiO_3(100)$ single crystal substrates showed superconductivities above liquid nitrogen temperature($T_{c,onset}=87{\sim}89K$, $T_{c,zero}=85{\sim}86K$), but the one on polycrystalline $SrTiO_3$ substrate did not.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.138.2-138.2
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• 2010

Scandium-doped zirconium, ScSZ-based electrolyte, provides higher oxygen conductivity than YSZ and nano-based electrolyte materials are ideal for fabricating thin film electrolyte membrane of SOFC unit cell. Moreover, it may be applied to anode and cathode as well as electrolyte as ionic conductor. In this report, nano-based ScSZ-based electrolyte powder was prepared by co-precipitation synthesis. The particle size, surface area and morphology of the powder were observed by SEM and BET. Thin film electrolyte of under $10{\mu}m$ was fabricated by tape casting and co-firing using the synthesized ScSZ-based powders, and ionic conductivity and gas permeability of electrolyte film were evaluated. Finally, the SOFC unit cell was fabricated using the anode-supported electrolyte prepared by a tape casting method and co-sintering. Electrochemical evaluations of the SOFC unit cell, including measurements such as power density and impedance, were performed and analyzed.

• 한국신재생에너지학회:학술대회논문집
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• 2009.11a
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• pp.187-190
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• 2009

$LaCrO_3$ series are the most common candidate materials for a ceramic interconnect for SOFC and the thermal expansion coefficient of these matches very well with that of YSZ electrolyte. In this study, characteristics of the coated films on the anode-support, which were formed by using $La_{0.8}Ca_{0.2}CrO_3$, $La_{0.8}Sr_{0.2}CrO_3$, $La_{0.8}Ca_{0.2}Co_{0.1}Cr_{0.9}O_3$ for ceramic interconnet for SOFC, were investigated. All powders showed single perovskite phase and the precursors had spherical shapes of $2{\mu}m{\sim}30{\mu}m$. According to SEM analysis, coated film of LCC on pretreated anode-support was more thicker, whereas the coated film on untreated anode-support was densely formed. As the results of electrical conductivity of anode-support coated with the ceramic interconnects, LCCC exhibited the most excellent electrical conductivity of 0.15S/cm at $750^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.11
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• pp.1241-1245
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• 2004

Continuous physical vapor deposition (PVD) method is one of many processes to fabricate long length coated conductor which is required for successful large-scale application of superconducting power devices. Three film deposition systems (pulsed laser deposition, sputtering, and evaporation) equipped with reel-to-reel(R2R) metal tape moving apparatus were installed and used to deposit multi-layer oxide thin films. Both RABiTS and IBAD texture templates are used. IBAD template consists of CeO$_2$(PLD)/YSZ(IBAD) on stainless steel(SS) metal tape, and RABiTS template has the structure of CeO$_2$/YSZ/Y$_2$O$_3$ which was continuously deposited on Ni-alloy tape using R$_2$R evaporation and DC reactive sputtering in a deposition system designed to do both processes. 0.4 m-long coated conductor with Ic(77 K) of 34 A/cm was fabricated using RABiTS template. 0.5 m and 1.1 m-long coated conductor with Ic(77 K) of 41 A/cm and 26 A/cm were fabricated using IBAD template.