• Title/Summary/Keyword: Y2O3

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Effect of Additives and Cooling Rates on the Electrical Resistivity of $BaTiO_3$ Ceramics: (II) Multi-Component Systems of $TiO_2$, $SiO_2$ and $Al_2O_3$ Additives ($BaTiO_3$ 세라믹스의 전기저항에 미치는 첨가제와 냉각속도의 영향: (II) $TiO_2$, $SiO_2$$Al_2O_3$ 복합첨가)

  • 염희남;하명수;이재춘;정윤중
    • Journal of the Korean Ceramic Society
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    • v.28 no.10
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    • pp.803-809
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    • 1991
  • Microstructure, room temperature resistivity and temperature coefficient of resistance of BaTiO3 ceramics were characterized and measured in this study. The basic composition of the BaTiO3 cremics was formed by adding 0.25 mol% Dy2O3 and 0.07 mol% MnO2 to the BaTiO3 composition. Samples of the BaTiO3 ceramics were prepared by adding various amounts of the TiO2, SiO2 and Al2O3 to the basic composition. An addition of 1 mol% TiO2, 2 mol% SiO2 and 0.5 mol% Al2O3 to the basic composition resulted both the values of the room temperature resistivity and the temperatured coefficient being maxium. Meanwhile, an addition of 1 mol% TiO2 and 1 mol% Al2O3 to the basic composition resulted the value of the room temperature resistivity maxium and the temperature coefficient minimum. The temperature coefficient showed a maximum value as well as a minimum value when the three kinds of the additives were added together to the basic composition of the BaTiO3 ceramics. Maxed phases of BaTi3O7, BaTiSiO5 and BaAl2Si2O8 were present at the grain boundary.

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Effects of ${Er_2}{O_3}$ Addition on the Dielectric Properties of Non-reducible $BaTiO_3$-based X7R Dielectrics (${Er_2}{O_3}$첨가가 $BaTiO_3$계 내환원성 X7R 재질의 유전특성에 미치는 효과)

  • Park, Jae-Seong;Hwang, Jin-Hyeon;Han, Yeong-Ho
    • Korean Journal of Materials Research
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    • v.11 no.1
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    • pp.44-47
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    • 2001
  • Effects of $Er_2O_3$ addition on the dielectric properties of non-reducible $BaTi_3$-based X7R dielectrics with Ni electrode have been studied in reducing atmosphere. X7R with moderate temperature-dependence was developed after addition of $Er_2O_3$ with $MnO_2-MgO$; room-temperature dielectric constant and dissipation factor were >2900 and < 1.0%, respectively. The addition of $Er_2O_3$ greater than 3.0 mol% improved the temperature dependence of dielectric properties, but a significant decrease of the dielectric constant at room-temperature was observed. The TCC curves rebated clockwise with increasing MnO$_2$ content at a given additive system, 1.5 mol% $Er_2O_3$ and 2.0 mol% MgO.

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Crystalline Phases and Dielectric Properties of Crystallized Glasses in the System (Ca, Sr, Ba) O-Al2O3-B2O3-SiO2-TiO2

  • Tuzuku, Koichiro;Kishi, Hiroshi;Taruta, Seiichi;Takusagawa, Nobuo
    • The Korean Journal of Ceramics
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    • v.5 no.2
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    • pp.189-194
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    • 1999
  • Crystallization of glasses in the system (Ca, Sr, Ba)$O-Al_2O_3-B_2O_3-SiO_2-TiO_2$ and dielectric properties of crystallized glasses were investigated. As increasing B2O3 content and decreasing SiO2 content in the glass, the major crystalline phase changed from $(Sr, Ba)_2TiSi_2O_8$ to (Ca, Sr, Ba)TiO3, the dielectric constant of crystallized glasses increased and the Temperature Coefficient of Capacitance (TCC) changed to negative. The dielectric constant and TCC was estimated for (Sr, Ba)2TiSi2O8 phase as 18 and -440 $ppm/^{\circ}C$, respectively and for (Ca, Sr, Ba)TiO3 phase as 307 and -1900 $ppm/^{\circ}C$, respectively. The dielectric properties of (Ca, Sr, Ba)TiO3 phase (in this study) were similar to those of (Ca, Ba) TiO_3 solid-solution^12)$, but $(Sr, Ba)_2TiSi_2O_8$ phase (in this study) and $Sr_2TiSi_2O_\;8^4$ showed the different properties.

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Effect of $Al_2O_3$ pre-layers formed using protective Si-oxide layer on the growth of ultra thin ${\gamma}-Al_2O_3$ epitaxial layer (보호용 실리콘 산화막을 이용하여 제조된 $Al_2O_3$ 예비층이 초박막 ${\gamma}-Al_2O_3$ 에피텍시의 성장에 미치는 영향)

  • Jung, Young-Chul;Jun, Bon-Keun;Ishida, Makoto
    • Journal of Sensor Science and Technology
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    • v.9 no.5
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    • pp.389-395
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    • 2000
  • In this paper, we propose the formation of an $Al_2O_3$ pre-layer using a protective Si-oxide layer and Al layer. Deposition of a thin film layer of aluminum onto a Si surface covered with a thin Si-oxide layer and annealing at $800^{\circ}C$ led to the growth of epitaxial $Al_2O_3$ layer on Si(111). And ${\gamma}-Al_2O_3$ layer was grown on the $Al_2O_3$ per-layer. Etching of the Si substrate by $N_2O$ gas could be avoided in the initial growth stage by the $Al_2O_3$ pre-layer. It was confirmed that the $Al_2O_3$ pre-layer was effective in improving the surface morphology of the very thin ${\gamma}-Al_2O_3$ films.

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Aging Behavior and Electric Field Induced-Domain Stabilization in Cr2O3 Doped Pb(Zr0.525 Ti0.475)O3 System (Cr2O3첨가 Pb(Zr0.525 Ti0.475)O3계에서의 시효거동과 전계유도 Domain 안정화)

  • 한이섭;김호기
    • Journal of the Korean Ceramic Society
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    • v.24 no.5
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    • pp.477-483
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    • 1987
  • Cr2O3 doped Pb(Zr0.525 Ti0.475)O3 piezoelectric ceramics were prepared from reagent grade oxide mixture, PbO, ZrO2, TiO2 and Cr2O3. Piezoelectric and aging properties of specimens were measured for various additions of Cr2O3. Generally, it has been known that aging rate decreased with Cr2O3 addition by stabilizing the domain wall. But hysteresis loops showed that the domain destabilization was occurred at high electric field (larger than 10KV/cm). In smaller additions of Cr2O3 (0-0.2mol%), aging rate increased and microcracks were created with increasing poling filed due to increasing internal stress. In larger additions of Cr2O3(0.4∼0.6mol%), aging rate decreased with increasing poling field.

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Fabrication of a Zirconia Oxygen Sensor Added with $Al_{2}O_{3}$ and Its Characteristics ($Al_{2}O_{3}$가 첨가된 지르코니아 산소센서의 제조 및 그 특성)

  • Sohn, Jeong-Duk;Choi, Sie-Young
    • Journal of Sensor Science and Technology
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    • v.1 no.1
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    • pp.93-100
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    • 1992
  • Sinterability, mechanical and electrical properties of yttria-stabilized zirconia(92 mole% $ZrO_{2}$+8 mole% $Y_{2}O_{3}$) doped with 0.5 mole% $SiO_{2}$ and $0{\sim}2.0 mole%{\;}Al_{2}O_{3}$ were studied as a function of $Al_{2}O_{3}$ addition. Sintered density increased with increasing $Al_{2}O_{3}$ addition up to 0.5 mole % but leveled off with further addition. Victors hardness is proportional to sintered density. The specimen with 0.5 mole% $Al_{2}O_{3}$ and 0.5 mole% $SiO_{2}$ exhibited the maximum electrical conductivity and revealed a maximum electromotive force for a given oxygen partial pressure. Experimental voltage curve of this oxygen sensor take on a sharper, more steplike transition at the stoichiometric A/F ratio than those of other commercial oxygen sensors.

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Mechanical properties of $Al_2O_3/Mo/MnO_2$ composite ($Al_2O_3/Mo/MnO_2$ 복합재료의 기계적 특성)

  • Park, Hyun;Kim, Kyung-Nam
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.16 no.4
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    • pp.172-179
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    • 2006
  • When $Al_2O_3-MoO_3$ mixture is reduced, $MoO_3$ is only reduced to Mo at $900^{\circ}C$. But a compound between $Al_2O_3$ and Mo is not formed up to $1300^{\circ}C$. In the case of $Al_2O_3-MoO_3-MnO_2$ mixture, an intermediate compound $Mn_2Mo_3O_8$ is firstly formed at $900^{\circ}C$ and changes to $MnAl_2O_4$ at $1100^{\circ}C{\sim}1300^{\circ}C$. $Al_2O_3/Mo/MnO_2$ composite are manufactured by a selective reduction process in which Mo is only reduced in the powder mixture of $Al_2O_3,\;MoO_3\;and\;MnO_2$ oxide. For $Al_2O_3/Mo$ composite, the average grain size was not changed with increasing Mo content because of inhibition of grain growth of $Al_2O_3$ matrix in the presence of Mo particles. Fracture strength increased with increasing Mo content due to phenomenon of grain growth inhibition of $Al_2O_3$ matrix. Hardness decreased because of a lower hardness value of Mo, whereas fracture toughness increased. For $Al_2O_3,\;Mo\;and\;MnO_2$ composite, grain growth was facilitated by MnOB and it showed a lower fracture strength because of grain growth effect with increasing Mo and $MnO_2$ content. Hardness decreased because of the grain growth of matrix and coalesced Mo particles to be located in grain boundary, whereas fracture toughness increased.

Microwave Dielectric Properties of the $(1-x)Mg_4Ta_2O_9-x(TiO_2,\;CaTiO_3,\;SrTiO_3)$ Ceramics ($(1-x)Mg_4Ta_2O_9-x(TiO_2,\;CaTiO_3,\;SrTiO_3)$ 세라믹스의 마이크로파 유전 특성)

  • Kim, Jae-Sik;Choi, Eui-Sun;Bae, Seon-Gi;Lee, Young-Hie
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.55 no.7
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    • pp.344-348
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    • 2006
  • The effect of x on microwave dielectric properties of the $(1-x)Mg_4Ta_2O_9-x(TiO_2,\;CaTiO_3,\;SrTiO_3)$ ceramics for microwave components were investigated. All spcecimens prepared by the conventional mixed oxied method and sintered at $1450^{\circ}C$. Microwave dielectric properties of the $(1-x)Mg_4Ta_2O_9-xTiO_2$ ceramics were influenced by $MgTi_2O_5$ phase. Also the microwave dielectric properties of the $(1-x)Mg_4Ta_2O_9-x(TiO_2,\;CaTiO_3,\;SrTiO_3)$ ceramics were dominated with an addition of $CaTiO_3\;and\;SrTiO_3$. The dielectric constant $(\varepsilon_r)$, quality factor $(Q{\times}f_r)$ and temperature coefficient of the resonant frequency $(TCRF,\;\tau_f)$ of the $(1-x)Mg_4Ta_2O_9-x(TiO_2,\;CaTiO_3,\;SrTiO_3)$ ceramics were $12.96\sim70.98,\;5,132\sim186,410GHZ$ and $-35.82\sim+75.96ppm/^{\circ}C$, respectively, and depend on x and addition materials.

Fabrication and Its Characteristics of YSZ Composite with Added Transition Metal Oxides (천이금속산화물이 첨가된 YSZ 복합체의 제조 및 그 특성)

  • 최성운;박재성
    • Journal of the Institute of Electronics Engineers of Korea TE
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    • v.39 no.4
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    • pp.341-349
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    • 2002
  • Electrical, mechanical and sinterability properties of yttria-stabilized zirconia doped with 5.35wt% $Y_2$O$_3$(Y$_2$O$_3$- containing stabilized zirconia : YSZ) were studied as a function of $Al_2$O$_3$, CoO, Fe$_2$O$_3$ and MnO$_2$ addition. The ratio of monoclinic phase to tetragonal phase was changed by the addition of $Al_2$O$_3$, CoO, Fe$_2$O$_3$ and MnO$_2$ to 8.00 wt% and sintered density decreased with increasing $Al_2$O$_3$, CoO, Fe$_2$O$_3$ and MnO$_2$ addition. Fracture toughness increased with the increase of monoclinic to tetragonal phase ratio and was maximum at about 18%. When transition metals such as CoO, Fe$_2$O$_3$ or MnO$_2$ was added more than 1.5 wt%, the electrical conductivity of YSZ increased. But $Al_2$O$_3$ hardly affected the electrical conductivity of YSZ. The addition of $Al_2$O$_3$, CoO, Fe$_2$O$_3$ and MnO$_2$ into YSZ resulted in the more complex behavior of fracture toughness and hardness variation and the specimen with 1.5wt%-Fe$_2$O$_3$, 3.0wt%-Al$_2$O$_3$ and 1.5wt%-CoO showed the monoclinic to tetragonal phase ratio of 18% and the highest toughness of 10.8 MPa.m$^{1}$2/ and Vickers hardness of 1201 kgf/mm$^2$.

Preparation of M Type Hexa-Ferrite Using the Mill Scale (Mill Scale을 이용한 M형 Ferrite의 합성)

  • 오영우
    • Journal of the Korean Magnetics Society
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    • v.6 no.4
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    • pp.204-210
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    • 1996
  • M type hexa-ferrites were prepared by means of a solid state reaction using mill scale, $Fe_{2}O_{3}$, and the mixture of mill scale and $Fe_{2}O_{3}$. The mixture of powders were calcined at $1150^{\circ}C$ for 2 hrs. and sintered at $1250^{\circ}C$ for 2 hrs, with varing the mole ratio of $Fe_{2}O_{3}$/$BaCO_{3}$, by 5.2~6.0. And the magnetic properties and morphologies of Baferrites with impurities such as $SiO_{2},\;Al_{2}O_{3},\;MgO,\;CaO\;and\;Na_{2}O$ in the mill scale were investigated. The magnetic properties were worsened by the addition of $Na_{2}O because of non-reacted iron oxide and intermediate compound of $BaFe_{2}O_{4}$ but they were improved apparently by the addition of $Si_{2}$ and $Al_{2}O_{3}$ in the composition of $BaO.5.6Fe_{2}O_{3}$. Moreover, $M_{s}$ decreased but $_{B}H_{C}$ increased through the addition of $Al_{2}O_{3}$ in Ba-ferrite. ${(BH)}_{max}$ of sintered BM($BaCO_{3}$, mill scale mixture) and BFM($BaCO_{3}$, $Fe_{2}O_{3}$, and null scale mixture) were 0.86 and 1.04 MGOe, respectively, and the magnetic properties were changed around $440^{\circ}C$.

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