• Journal of the Korean Applied Science and Technology
• /
• v.30 no.2
• /
• pp.320-332
• /
• 2013

The feed air to MSW incinerator influences on the residence time of combustion gas, removal of unburnt ash and exiting gas temperature. Thus the secondary air volume could present sufficient residence time which can maintain the exiting temperature over $850^{\circ}C$. The secondary air also relates directly with the turbulence in the inside of combustion chamber, which finally provide the stable combustion condition. The present study designed a modern incinerator for a field scale, and evaluation of the potential amount of primary air based on the daily combustible quantity. From the evaluated primary air volume, the secondary air flow rate could be estimated, and its dynamic behavior was verified. In addition, the obtained air volume enables to find an optimum operation condition of the combustion. As a result of the CFD simulation, the air ratio 75 : 25 between primary and secondary air amount was optimum ratio than design criteria 72 : 28. And the flow velocity ratio of front-back of secondary air jet nozzle was found excellent at 1 : 3. In addition, the result of applied to the plant, the removal efficiency of NOx and CO generation would concentration of CO.

• Journal of the Korean Electrochemical Society
• /
• v.4 no.3
• /
• pp.104-108
• /
• 2001

Naphthalene derived mesophase pitch WP) was spun into short fibers by using melt-blown technology. The pitch fibers oxidative stabilization were carried out heating rates of $2^{\circ}C/min,\;5^{\circ}C/min\;and\; 10^{\circ}/min$. The heating rate was a key factor to maximate the capacity of the Li-ion secondary battery through controlling the morphology of the graphitized fiber. The diameters of the melt-blown fibers prepared were in the range of $4{\mu}m\~16{\mu}m$ with functions of air jet speed, air temperature and the temperature of the nozzle. The graphitized fibers of $10{\mu}m$ diameters showed various morphological structure with heating rate of the stabilization. Radial, radial-random and skin-core cross-sectional structure of the fibers were observed at the respective heating rate of $2^{\circ}C/min\;5^{\circ}C/min\;and\;10^{\circ}C/min$. Most crystalline structure of graphite was obtained from the fiber stabilized at heating rate of $10^{\circ}C/min$ exhibiting the best anode performance with 400 mAh/g of capacitance and $96.8\%$ of charge/discharge efficiency.

• Proceedings of the Korean Vacuum Society Conference
• /
• 1998.02a
• /
• pp.120-120
• /
• 1998

Boron nitride (BN) films have attracted a growing interest for a variety of t technological applications due to their excellent characteristics, namely hardness, c chemical inertness, and dielectrical behavior, etc. There are two crystalline phases 1551; of BN that are analogous to phases of carbon. Hexagonal boron nitride (h-BN) has a a layered s$\sigma$ucture which is spz-bonded structure similar to that of graphite, and is t the stable ordered phase at ambient conditions. Cubic boron nitride (c-BN) has a z zinc blende structure with sp3-bonding like as diamond, 따ld is the metastable phase a at ambient conditions. Among of their prototypes, especially 삼Ie c-BN is an i interesting material because it has almost the same hardness and thermal c conductivity as di없nond. C Conventionally, significant progress has been made in the experimental t techniques for synthesizing BN films using various of the physical vapor deposition 밍ld chemical vapor deposition. But, the major disadvantage of c-BN films is that t they are much more difficult to synthesize than h-BN films due to its narrow s stability phase region, high compression stress, and problem of nitrogen source c control. Recent studies of the metalorganic chemical vapor deposition (MOCVD) of I III - V compound have established that a molecular level understanding of the d deposition process is mandatory in controlling the selectivity parameters. This led t to the concept of using a single source organometallic precursor, having the c constituent elements in stoichiometric ratio, for MOCVD growth of 삼Ie required b binary compound. I In this study, therefore, we have been carried out the growth of h-BN thin f films on silicon substrates using a single source precursors. Polycrystalline h-BN t thin films were deposited on silicon in the temperature range of $\alpha$)() - 900 $^{\circ}$C from t the organometallic precursors of Boron-Triethylamine complex, (CZHs)3N:BRJ, and T Tris(dimethylamino)Borane, [CH3}zNhB, by supersonic molecular jet and remote p plasma assisted MOCVD. Hydrogen was used as carrier gas, and additional nitrogen w was supplied by either aDlIDonia through a nozzle, or nitrogen via a remote plasma. T The as-grown films were characterized by Fourier transform infrared spectroscopy, x x-ray pthotoelectron spectroscopy, Auger electron spectroscopy, x-ray diffraction, t transmission electron diffraction, optical transmission, and atomic force microscopy.roscopy.