• Transactions on Electrical and Electronic Materials
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• v.3 no.2
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• pp.10-15
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• 2002

In this paper, the electrical characteristics of fabricated p+-n junction diode are demonstrated and interpreted with different theoretical calculations. Dopants distribution by boron ion implantation on silicon wafer were simulated with TRIM-code and ICECaEM simulator. In order to make electrical activation of implanted carriers, thermal annealing treatments are carried out by RTP method for 1min. at $1000^{circ}C$ under inert $N_2$ gas condition. In this case, profiles of dopants distribution before and after heat treatments in the substrate are observed from computer simulations. In the I-V characteristics of fabricated diodes, an analytical description method of a new triangular junction model is demonstrated and the results with calculated triangular junction are compared with measured data and theoretical calculated results of abrupt junction. Forward voltage drop with new triangular junction model is lower than the case of abrupt junction model. In the C-V characteristics of diode, the calculated data are compared with the measured data. Another I-V characteristics of diodes are measured after proton implantation in electrical isolation method instead of conventional etching method. From the measured data, the turn-on characteristics after proton implantation is more improved than before proton implantation. Also the C-V characteristics of diode are compared with the measured data before proton implantation. From the results of measured data, reasonable deviations are showed. But the C-V characteristics of diode after proton implantation are deviated greatly from the calculated data because of leakage currents in defect regions and layer shift of depletion by proton implantation.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.3
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• pp.263-267
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• 2014

Super junction trench gate power MOSFETs have been receiving attention in terms of the trade-off between breakdown voltage and on-resistance. The vertical structure of super junction trench gate power MOSFETs allows the on-resistance to be reduced compared with conventional Trench Gate Power MOSFETs. The heat release of devices is also decreased with the reduction of on-resistance. In this paper, Lattice Temperature of two devices, Trench Gate Power MOSFET and Super junction trench gate power MOSFET, are compared in several temperature circumstance with the same Breakdown Voltage and Cell-pitch. The devices were designed by 100V Breakdown voltage and measured from 250K Lattice Temperature. We have tried to investigate how much temperature rise in the same condition. According as temperature gap between top of devices and bottom of devices, Super junction trench gate power MOSFET has a tendency to generate lower heat release than Trench Gate Power MOSFET. This means that Super junction trench gate power MOSFET is superior for wide-temperature range operation. When trench etching process is applied for making P-pillar region, trench angle factor is also important component. Depending on trench angle, characteristics of Super junction device are changed. In this paper, we focus temperature characteristic as changing trench angle factor. Consequently, Trench angle factor don't have a great effect on temperature change.

• The Journal of Churna Manual Medicine for Spine and Nerves
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• v.5 no.2
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• pp.113-125
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• 2010

Objectives: We have evaluated the effects of conservative treatment on one patient who was diagnosed to thoraco-lumbar junction and lumbo-sacral junction transitional zone syndrome. so, we investigate thoraco-lumbar junction and Jumbo-sacral junction tranzitional zone syndrome that was suggested by Maigne R. Methods : One patient was diagnosed as T12-L1 herinated intervetebral disc through MRI. We diagnosed the patient to transitional zone syndrome by symptoms and physical examination and used Acupuncture therapy, Cox technique to the patient. We measured Visual Analog Scale(VAS) before and after treatment. Results: After treating Acupuncture therapy, Cox technique in the case, We find out that the patient was improved. VAS score changed from 7 to 2 and physical examinations are improved. Conclusions: We improved the patient who had thoraco-lumbar junction and lumbo-sacral junction transitional zone syndrome by Cox technique and Acupuncture therapy, and we found that thoraco-lumbar junction related lumbo-sacral junction.

• Journal of Power Electronics
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• v.12 no.1
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• pp.19-23
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• 2012

This paper presents a practical methodology for realistic simulation on reverse characteristics of Wide Bandgap (WBG) SiC and GaN p-n junctions. The adjustment on certain physic-based model parameters, such as the trap density and photo-generation for SiC junction, and impact ionization coefficients and critical field for GaN junction are described. The adjusted parameters were used in Synopsys Medici simulation to obtain a realistic p-n junction avalanche breakdown voltage. The simulation results were verified through benchmarking against independent data reported by others.

• Reproductive and Developmental Biology
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• v.28 no.3
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• pp.147-153
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• 2004

The oocyte and its surrounding granulosa cells co-exist in a closed compartment called a follicle, although they receive many signals from other parts of the body. It is well established that the intercellular communications between the oocyte and granulosa cells are required for normal oocyte development and ovulation during folliculogenesis. Gap junctions are intercellular channels allowing the direct transmission of ions and small molecules between coupled cells. Several lines of studies have shown that multiple connexins (Cx, subunits of gap junction) are expressed in mammalian ovarian follicles. Among them, two major connexins Cx37 and Cx43 are expressed in different manner. While the gap junction channels formed by Cx37 are localized between the oocyte and encompassing granulosa cells, the intercellular channels by Cx43 are located between granulosa cells. In this review, I will summarize the general properties of gap junction channels and discuss their possible formation (or compatibility) of intercellular channels formed by the oocyte and granulosa cells.

• Journal of the Korean Society of Industry Convergence
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• v.10 no.4
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• pp.275-283
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• 2007

This study aims at the calculation of a variation of flow characteristics of main channel for tributary inflow in river junction. So this study was analyzed the variation of flow depth and velocity in main channel for a change of inflow degree. For this purpose, FLDWAV model are carried out for variations of $30^{\circ}$, $60^{\circ}$ and $90^{\circ}$ tributary inflow at junction. Results show that velocity ratio(V1/V3) increases and flow depth ratio(H1/H3) decreases for discharge ratio(Q1/Q3) of upstream and downstream when degree increases in junction. And FLDWAV model was applied at a real river junctions. Selected area is a junction of Gumho river and Sin stream. Results show that pattern is similar to a virtual channel.

• The Korean Journal of Pain
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• v.28 no.4
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• pp.231-235
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• 2015

Damage to peripheral nerves or the spinal cord is often accompanied by neuropathic pain, which is a complex, chronic pain state. Increasing evidence indicates that alterations in the expression and activity of gap junction channels in the spinal cord are involved in the development of neuropathic pain. Thus, this review briefly summarizes evidence that regulation of the expression, coupling, and activity of spinal gap junction channels modulates pain signals in neuropathic pain states induced by peripheral nerve or spinal cord injury. We particularly focus on connexin 43 and pannexin 1 because their regulation vastly attenuates symptoms of neuropathic pain. We hope that the study of gap junction channels eventually leads to the development of a suitable treatment tool for patients with neuropathic pain.

• Journal of Industrial Technology
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• v.13
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• pp.25-31
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• 1993

This paper presents an analysis of microwave device component. An H-Plane waveguide component with arbitrary shape is analyzed using finite element method(FEM) cooperated with boundary element method(BEM). The finite element method(FEM) is applied to the junction region and the boundary element method(BEM) to the waveguide region. For the application of BEM in the waveguide structure, a ray representation of the waveguide Green's function is used. The proposed technique was applied to the analysis of the waveguide inductive junction to compare the numerical result with the result of the mode matching technique. The comparison showed good agreements between the two results. Transmitted powers were also computed in T-junction waveguides for the various shape of the junction area.

• Journal of Industrial Technology
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• v.29 no.B
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• pp.187-191
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• 2009

Recently, we have used LEDs to illumination because it has a high luminous efficiency and prolong lifespan. However the light power and lifetime is reduced by junction temperature increment of LED. So it is important to measure the junction temperature accurately. In case of using a electrical method measuring junction temperature of LED. Temperature measurement errors are spontaneously generated because of a parasitic capacitances in LED. In this paper, we proposed a method that reducing LED's parasitic capacitance effects for electrical measurement. It was demonstrated by the experimental result that is more correct than established method.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.8
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• pp.71-77
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• 1992

According to increasing the doping concentration in p-n junction, a tunneling current through trap as well as SRH(Shockley-Read-Hall) generation-recombination current in depletion region occurs. It is the tunneling current that is a dominant current at the forward bias. In this paper, the new tunneling-recombination equation is derived. The thermal generation-recombination current and tunneling current though trap can be easily calculated at the same time because this equation has the same form as the SRH generation-recombination equation. For the validity of this equation, 2 kind of samples are simulated. The one is $n^{+}$-p junction device fabricated with MCT(Mercury Cadmium Telluride, mole fraction=0.29), the other Si n$^{+}-p^{+}$ junction. From the results for MCT $n^{+}$-p junction device and comparing the simulated and expermental I-V characteristics for Si n$^{+}-p^{+}$ junction, it is shown that this equation is a good description for tunneling through trap and thermal generation-recombination current calculation.