• Journal of Hydrogen and New Energy
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• v.13 no.4
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• pp.279-286
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• 2002

In this study, quantitative nitric oxide concentration distributions are investigated in the laminar non-premixed $H_2/N_2$ flames by laser-induced fluorescence (LIF). The measurements are taken in flames for different $N_2$ dilution ratios varying from 20~80%, and fuel flow rate is fixed as Islpm. The NO A-X (0,0) vibrational band around 226 nm is excited using a XeCl excimer-pumped dye laser. We applied same excitation line used in $CH_4$, premixed flame. Overall, NO concentration was rapidly decreased with Na addition and we could not measure the concentration any longer for $N_2$ dilution above 80%.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.169-170
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• 2000

The conventional AC PDP has a relatively low efficiency which is close to 1.5 lm/W. If the AC sustain period is replaced by the RF sustain period, due to oscillating and low electric field, almost 60% of the supplied energy is spent by Xe excitation [1]. The efficiency of RF PDP can be $4{\sim}5$ times higher than that of AC PDP. In this paper, we will present the RF PDP that is a new type of PDP. A new display method in PDP using RF pulses is suggested and applied on a 4-inch-diagonal Panel (hereinafter 4" panel). Even though there were many researches in RF discharge, there was not enough research for display application. Now we propose the RF PDP that is a new display field and we will expect to do more research in this field.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.7-8
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• 2010

The surface conductive layer (SCL) of chemical vapor deposition (CVD) diamonds has attracting much interest. However, neither photoemission electron microscopic (PEEM) nor micro-spectroscopic (PEEMS) information is available so far. Since SCL retains in an ultra-high vacuum (UHV) condition, PEEM or PEEMS study will give an insight of SCL, which is the subject of the present study. The sample was made on a Ib-type HTHP diamond (001) substrate by non-doping CVD growthin a DC-plasma deposition chamber. The SCL properties of the sample in air were; a few tens K/Sq. in sheet resistance, ${\sim}180\;cm^2/vs$ in Hall mobility, ${\sim}2{\times}10^{12}/cm^2$ in carrier concentration. The root-square-mean surface roughness (Rq) of the sample was ~0.2nm as checked by AFM. A $2{\times}1$ LEED pattern and a sheet resistance of several hundreds K/Sq. in UHV were checked in a UHV chamber with an in-situ resist-meter [1]. The sample was then installed in a commercial PEEM/S apparatus (Omicron FOCUS IS-PEEM) which was composed of electro-static-lens optics together with an electron energy-analyzer. The presence of SCL was regularly monitored by measuring resistance between two electrodes (colloidal graphite) pasted on the two ends of sample surface. Figure 1 shows two PEEM images of a same area of the sample; a) is excited with a Hg-lamp and b) with a Xe-lamp. The maximum photon energy of the Hg-lamp is ~4.9 eV which is smaller that the band gap energy ($E_G=5.5\;eV$) of diamond and the maximum photon energy of the Xe-lamp is ~6.2 eV which is larger than $E_G$. The image that appear with the Hg-lamp can be due to photo-excitation to unoccupied states of the hydrogen-terminated negative electron affinity (NEA) diamond surface [2]. Secondary electron energy distribution of the white background of Figs.1a) and b) indeed shows that the whole surface is NEA except a large black dot on the upper center. However, Figs.1a) and 1b) show several features that are qualitatively different from each other. Some of the differences are the followings: the two main dark lines A and B in Fig.1b) are not at all obvious and the white lines B and C in Fig.1b) appear to be dark lines in Fig.1a). A PEEMS analysis of secondary electron energy distribution showed that all of the features A-D have negative electron affinity with marginal differences among them. These differences can be attributed to differences in the details of energy band bending underneath the surface present in SCL [3].

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.2
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• pp.71-77
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• 2001

We investigated photoluminescence, long-phosphorescent and crystalline properties with various $Dy_2$$O_3$ compositions (0.0~9.5mol%) in $SrAl_2$$O_4$ : $Eu^{2+}$,$Dy^{3+}$ phosphor powders prepared by the solid state reaction. The highest emission wavelength (520nm) of photoluminescence spectra was not affected by the Dy doping concentrations. The$SrAl_2$$O_4$single phase which was determined by X-ray diffraction and photoluminescence was appeared for the concentrations of $Dy_2$$O_3$$\leq$1.0 mol%. After removal of the pulsed Xe-lamp excitation (360nm), also, excellent long phosphorescent properties of the phosphors were obtained with the concentrations of $Dy_2$$O_3$$\leq$1.0mol%, although the decay time for all phosphors decrease exponentially.