• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2007.05a
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• pp.877-881
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• 2007

Recently, noise map is used widely by synthetic estimation method for noise reduction. For correct manufacture of noise map, selection of suitable noise prediction method is important. This study compares XPS31-133 with CRTN, RLS90 which are widely used by foreign commercial noise maps.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2008.11a
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• pp.709-714
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• 2008

The various computer programs are used in computer simulation of the traffic noise prediction. But the difference or problem of calculation method used for road traffic noise prediction is not exactly investigated. In this paper, Road traffic noise is predicted on the specific regions by using four prediction methods such as XPS31-133 model(France), RLS-90 model(Germany), ASJ RTN model(Japan) and FHWA model(U.S.A.), which are operated by a program named SoundPLAN, a program to predict road traffic noise. Those prediction values are compared with a measurement value. The results show that four prediction values for taraffic noise are a little different, because of various input factors according to the prediction methods.

• Nuclear Engineering and Technology
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• v.31 no.2
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• pp.133-138
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• 1999

Research on the etching reaction of UO$_2$ with CF$_4$/O$_2$gas mixture plasma is carried out. The reaction rates are investigated as a function of CF$_4$/O$_2$ ratio, plasma power, and substrate temperature. It is found that there exists an optimum CF$_4$/O$_2$ ratio around 4:1 at all temperatures up to 37$0^{\circ}C$ and surface analysis using XPS X-ray Photoelectron Spectroscopy) confirms the result. Peak rate at the optimum gas composition increases with increasing temperature. Highest rate obtained in this study leaches 1050 monolayers/min. at 37$0^{\circ}C$ under r. f. power of 150 W, which is equivalent to about 0.5${\mu}{\textrm}{m}$/min. The rate also increases with increasing r. f. power, thus, higher power and higher substrate temperature will undoubtedly raise the etching reaction rate much further. This reaction seems to be an activated process, whose activation energy will be derived in the following experiments.