• Transactions on Electrical and Electronic Materials
• /
• 제14권6호
• /
• pp.329-333
• /
• 2013

SiOC films were prepared by capacitively coupled plasma chemical vapor deposition, and the correlation between the binding energy by X-ray photoelectron spectroscopy and Arrhenius equation for ionization energy was studied. The ionization energy decreased with increase of the potential barrier, and then the dielectric constant also decreased. The binding energy decreased with increase of the potential barrier. The dielectric constant and electrical characteristic of SiOC film was obtained by Arrhenius equation. The dielectric constant of SiOC film was decreased by lowering the polarization, which was made from the recombination between opposite polar sites, and the dissociation energy during the deposition. The SiOC film with the lowest dielectric constant had a flat surface, which depended on how carbocations recombined with other broken bonds of precursor molecules, and it became a fine cross-linked structure with low ionization energy, which contributed to decreasing the binding energy by Si 2p, C 1s electron orbital spectra and O 1s electron orbital spectra. The dielectric constant after annealing decreased, owing to the extraction of the $H_2O$ group, and lowering of the polarity.

• 반도체디스플레이기술학회지
• /
• 제14권4호
• /
• pp.20-24
• /
• 2015

This study was explained the correlation between the O 1s spectra and the crystallization of ITO thin films. The crystal structure of ITO thin films changed with various annealing temperatures and annealing methods such as atmosphere or vaccum conditions. The amorphous structure observed from XRD pattern showed the O 1s spectra with 531.2 eV, and the crystal structure of annealed ITO films analyzed by XRD pattern had the O 1s spectra of 529.8 eV as lower binding energy then the 531.2 eV. Oxygen in view of ITO films was related to the crystallization, and the ITO films annealed in an atmosphere pressure showed higher crystal structure than the ITO annealed in a vaccum. It was indicated that the amorphous structure had higher binding energy than the crystal structure analyzed by O 1s spectra of ITO films.

• 한국표면공학회지
• /
• 제29권6호
• /
• pp.728-734
• /
• 1996

To obtain the relation in the electrochemical reduction of $CO_2$ in aqueous $KHCO_3$ colution between an activity for the product and the nature of Cu electrode, the electrode surface was characterized by using two methods: X-ray photoelectron spectroscopy (XPS) and photoelectron emission (PE) measurement. Electrolyses were performed with Cu electrodes pretreated in several ways. The distribution of the products changed drastically with electrolysis time and the pretreatment method. The features in XPS spectra were closely connected with the product distribution. The oxide film at the electrode surface was gradually reduced to bare Cu metal with electrolysis time, resulting in a variation of the product distribution. PE was measured by verying the wavelength of incident light at several temperatures. The dependence of PE on the measurement temperature changed greatly before and after electrolysis.

• 한국진공학회지
• /
• 제1권1호
• /
• pp.50-59
• /
• 1992

X선 광전자 분광방법(XPS)에 의하여 CdTe의 절개된 (110) 표면과 스퍼터링된 표 면을 산소에 노출시키면서 CdTe 표면의 산화과정의 초기단계에 대하여 고찰하였다. Te 3d5/2, Cd 3d5/2, O 1s, Cd MNN 오제 스펙트럼 등의 분석으로부터 산화의 초기단계에서 산 소원자 두 개가 Te 원자 한 개에 결합하고 있음을 보았다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
• /
• pp.590-590
• /
• 2013

Direct growth of graphene using CVD method has been done on CVD grown boron nitride substrate. From the SEM image, we have shown that the size of grain of graphene could be clearly controlled by varying the amount of injected hydrocarbon. To convince the existence of graphene on boron nitride, XPS and Raman has been checked. Both B1s and N1s peaks in XPS spectra and the Raman peak around 1,370 $cm^{-1}$ demonstrated that boron nitride did remain after high temperature treatment during the graphene growth process. And along the graphene grain boundary, the Raman fingerprint of graphene was neatly appeared.

• Bulletin of the Korean Chemical Society
• /
• 제15권7호
• /
• pp.549-553
• /
• 1994

The 2-(dimethylaminomethyl)thiophene (dmamt) complexes with copper(II) chloride and bromide were prepared and characterized by optical, EPR, XPS spectroscopies and magnetic susceptibility measurements. The low-energy absorption band above 850 nm and the relatively small EPR hyperfine coupling constant ($A_{//}{\simeq}$125 G) indicate the pseudotetrahedral site symmetry around copper(II) ion both in Cu(dmamt)$Cl_2$ and Cu(dmamt)$Br_2$ complexes. The higher satellite to main peak intensity of Cu $2P_{3/2}$ core electron binding energy in XPS spectra also supports the pseudotetrahedral geometry around the copper(II) ions having $CuNSX_2$ chromophores. The distortion from square-planar to pseudotetrahedral symmetry is likely to arise from the steric hindrance of the bulky dmamt ligand in the complex. Magnetic susceptibility study shows that these compounds follow Curie-Weiss law in the temperature range of 77-300 K with positive Weiss constant exhibiting the ferromagnetic interaction between copper(II) ions in solid state.

• 한국진공학회지
• /
• 제15권3호
• /
• pp.259-265
• /
• 2006

[ $RF-O_2$ ] plasma 처리한 MgO 박막의 스퍼터링 수율을 집속이온빔 장치를 이용하여 측정하였다. 가속 전압 10 kV의 Ga 이온빔을 주사했을 때 plasma 처리하지 않은 MgO 박막의 스퍼터링 수율은 0.33 atoms/ion, $RF-O_2$ plasma 처리한 MgO 박막의 스퍼터링 수율은 0.20 atoms/ion 으로 $RF-O_2$ plasma 처리한 경우 스퍼터링 수율이 낮아졌다. 또한 XPS, AFM을 통해 plasma 처리로 인한 MgO 표면의 변화를 관찰하였다. MgO 박막에 $RF-O_2$ plasma 처리한 후 XPS O 1s spectra의 binding energy와 FWHM 값이 각각 2.36 eV와 0.6167 eV 작아졌고 표면거칠기의 RMS 값 또한 0 32 nm 작아졌다.

• KEPCO Journal on Electric Power and Energy
• /
• 제1권1호
• /
• pp.169-174
• /
• 2015

본 연구에서는 그래핀의 인위적인 합성방법인 화학기상증착법을 활용하여 합성 파라미터들을 변화시켜줌으로써 그래핀의 물성을 조절하는 연구를 수행하였다. 먼저, 메탄가스를 탄소원으로 순수 그래핀을 합성하였고, 액상의 피리딘을 원료로 사용하여 질소가 도핑된 그래핀을 합성하였다. 각각의 그래핀의 물성은 라만 분광법, X선 광전자 분광법(XPS)을 통한 기초 광물성 측정과 게이트 전압에 따른 그래핀 채널의 전류-전압 응답특성을 통한 전기적 수송현상 측정에 의해 평가되었다. 메탄가스로 합성된 그래핀의 라만 분광 스펙트럼에서는 G-peak과 2D-peak가 선명히 보였고, XPS에서 C1s-peak가 선명하였고, 아울러 전하중성점은 게이트 전압 약 +4 V 정도에서 나타났다. 피리딘을 원료로 합성된 그래핀의 라만 분광 스펙트럼에서는 D-peak, G-peak 그리고 다소 약해진 2D-peak 등이 보였고, XPS에서는 C1s-peak은 물론 N1s-peak도 나타났으며, 전하중성점은 게이트 전압 약 -96 V 정도에서 나타났다. 결과적으로 우리는 화학기상증착법을 활용하여 그래핀의 물성을 성공적으로 조절하였다.

• 한국수소및신에너지학회논문집
• /
• 제16권3호
• /
• pp.277-283
• /
• 2005

Pretreatment procedure was investigated into brucite powders for mineral carbonation materials. Higher magnesium content was found from brucite powders and weight loss due to hydroxy group(-OH) elimination, explained by FT-IR spectra, was found after pretreatment. X-ray diffraction results showed that the crystallographic changing of brucite into magnesium oxides during pretreatment. XPS core spectra also showed chemical transformation of magnesium ingredient from hydroxides to oxide.

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 2002년도 춘계 학술발표강연 및 논문개요집
• /
• pp.132-132
• /
• 2002

Diamond is well known as the hardest material in nature. It also has other unique bulk physical and mechanical properties, such as very high thermal conductivity and broad optical transparency, which enable a number of new applications now that large areas of diamond can be fabricated by the new diamond plasma chemical vapor deposition (CVD) technologies. A study on the effects of growth kinetics and properties of diamond films obtained by addition of argon (~7 vol. %) into the methane/hydrogen mixture is carried out using HFCVD system. A negative bias was used as a nucleation enhancement method in addition to the argon dilution. The scanning electron microscopy (SEM) image of surface morphology shows well faceted crystallites with a predominance of angular shapes corresponding to <100> and <110> crystalline surfaces. The nucleation density and growth rate with argon dilution is two orders of magnitude higher than without argon deposition. The Raman spectra show a good quality film whereas XPS spectra show existence of only diamond phase.