• 제목/요약/키워드: XAFS

검색결과 26건 처리시간 0.049초

비소 및 중금속 오염토양 안정화 분야에서의 X선 흡수분광법(XAS) 활용 (Application of X-ray Absorption Spectroscopy (XAS) in the Field of Stabilization of As and Heavy Metal Contaminated Soil)

  • 임정은;문덕현;김권래;옥용식
    • Journal of Applied Biological Chemistry
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    • 제58권1호
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    • pp.65-74
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    • 2015
  • X선 흡수분광법(X-ray absorption spectroscopy, XAS)을 이용하는 X선 흡수미세구조(X-ray absorption fine structure, XAFS)의 분석은 다양한 학문분야에서 적용되고 있다. 본 연구에서는 XAFS 분석을 위한 토양 시료의 준비에서부터 XAFS 측정 후 X선 흡수 끝머리 부근 미세구조(X-ray absorption near edge structure, XANES) 및 광범위 X선 흡수 미세구조(extended Xray absorption fine structure, EXAFS) 데이터를 추출하여 연구에 활용하는 것에 대해 간략하게 소개하였다. 특히 토양환경 분야에서 XANES 및 EXAFS 분석을 활용한 선행연구들에 대해 비소(As) 및 중금속 주요 원소(Cd, Cu, Ni, Pb, Zn)별로 그 내용을 정리하였다. 토양환경 분야에서 XAFS의 응용은 납(Pb)의 화학종 규명에 관한 연구가 가장 많은 것으로 나타났다. 이와 함께 대부분의 연구들은 오염토양 내 중금속 화학종의 규명을 통해 중금속의 유입 원인 등에 대해 기술하고 있으며, 이를 정화하기 위한 다양한 방법들(개량제 처리, 식물정화)을 적용한 후, 안정화된 중금속 화학종을 XANES 및 EXAFS 분석을 통해 규명하여 정화 방법들의 효율성과 안정성에 대해 보고하였다.

Characterization of uranium species in molten salt : An application of synchrotron-based XAFS spectroscopy

  • Cho, Young-Hwan;Choi, In-Kyu;Kim, Won-Ho
    • 한국원자력학회:학술대회논문집
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    • 한국원자력학회 2002년도 추계학술발표회요약집
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    • pp.319.2-319
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    • 2002
  • Synchrotron-based X-ray absorption spectroscopy has been applied to determine the changes in bulk oxidation state of uranium oxides in molten salt. From an analysis of XANES data, one can determine the cahnges in bulk oxidation-state of U compounds in salts(LiCl/KCl). XAFS spectroscpy is a powerful tool for probing the changes in valence state and structure of uranium compounds in colten salt as well as in noncrystalline form and doped in other matrices.

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Analysis of Wide-gap Semiconductors with Superconducting XAFS Apparatus

  • Shiki, S.;Zen, N.;Matsubayashi, N.;Koike, M.;Ukibe, M.;Kitajima, Y.;Nagamachi, S.;Ohkubo, M.
    • Progress in Superconductivity
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    • 제14권2호
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    • pp.99-101
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    • 2012
  • Fluorescent yield X-ray absorption fine structure (XAFS) spectroscopy is useful for analyzing local structure of specific elements in matrices. We developed an XAFS apparatus with a 100-pixel superconducting tunnel junction (STJ) detector array with a high sensitivity and a high resolution for light-element dopants in wide-gap semiconductors. An STJ detector has a pixel size of $100{\mu}m$ square, and an asymmetric layer structure of Nb(300 nm)-Al(70 nm)/AlOx/Al(70 nm)-Nb(50 nm). The 100-pixel STJ array has an effective area of $1mm^2$. The XAFS apparatus with the STJ array detector was installed in BL-11A of High Energy Accelerator Research Organization, Photon Factory (KEK PF). Fluorescent X-ray spectrum for boron nitride showed that the average energy resolution of the 100-pixels is 12 eV in full width half maximum for the N-K line, and The C-K and N-K lines are separated without peak tail overlap. We analyzed the N dopant atoms implanted into 4H-SiC substrates at a dose of 300 ppm in a 200 nm-thick surface layer. From a comparison between measured X-ray Absorption Near Edge Structure (XANES) spectra and ab initio FEFF calculations, it has been revealed that the N atoms substitute for the C site of the SiC lattice.

Fabrication, temperature-dependent local structural and electrical properties of VO2 thin films

  • Jin, Zhenlan;Hwang, In-Hui;Park, Chang-In;Han, Sang-Wook
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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    • pp.169.2-169.2
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    • 2015
  • $VO_2$ is a well-known a metal-to-insulator-transition (MIT) material, accompanied with a first order structural phase transition near room temperature. Because of the structural phase transition and the MIT occur near a same temperature, there is an ongoing argument whether the MIT is induced by the structural phase transition. $VO_2$ exhibits a relatively weak anti-oxidization ability and can be oxidized to higher-valence oxides (e.g., $V_4$ $O_7$ or $V_2$ $O_5$) when annealed at a high temperature in an oxygen-rich atmosphere. We fabricated $VO_2$ films on $Al_2$ $O_3$ (0001) substrates using a DC magnetron sputtering deposition process with carefully control the $O_2$ percentage in an atmosphere. X-ray diffraction measurements from the films showed only (0l0) peaks with no extra peaks, indicating b-oriented films. The temperature-dependent local structural properties of $VO_2$ films were investigated by using in-situ X-ray absorption fine structure (XAFS) measurements at the V K edge. XAFS revealed that the structural phase transition was occurred nearly $70^{\circ}C$ for heating process and reproducible. Resistance measurements as a function of temperature (R-T) demonstrated that the resistance of $VO_2$ films was changed by a factor of 4 near $75^{\circ}C$ which was higher than $68^{\circ}C$ reported from a $VO_2$ bulk. We will discuss the MIT of $VO_2$ films, comparing with the local structural properties determined by XAFS measurements.

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굴 패각의 전처리 조건에 따른 인산염 제거효율에 관한 연구 (A Study on Phosphate Removal Efficiency by Pre-Treatment Conditioning of Oyster Shells)

  • 우희은;김경민;이인철;김경회
    • 해양환경안전학회지
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    • 제24권2호
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    • pp.196-202
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    • 2018
  • 굴 패각과 같은 반응성 재료는 사용 목적에 적합한 전처리 조건을 선택할 필요가 있다. 본 연구에서는 인 농도 제어를 목적으로 효율적인 굴 패각 사용을 위한 전처리 조건을 제안하는데 목적을 둔다. 굴 패각의 전처리(소성 온도, 소성 시간, 입자 크기)에 따른 인산염 제거 효율을 조사하였다. 또한 XAFS 분석 및 등온 흡착 실험을 통해 굴 패각의 인산염 제거특성에 대해 조사하였다. 실험 결과 소성 온도는 $600^{\circ}C$, 소성 시간은 6 h, 입자 크기는 0.355~0.075 mm에서 우수한 제거 효율을 확인하였다. 등온 흡착 실험 결과 Langmuir 모델이 굴 패각의 흡착에 적합한 것으로 나타났다. XAFS 분석 결과 $600^{\circ}C$에서 소성시킨 굴 패각에는 인산칼슘이 생성된 것이 확인되었다. 즉 굴 패각의 칼슘 이온 용출에 의한 인산칼슘 형성이 인산염의 농도 감소에 기여하고 있음을 확인하였다.

Iron Mixed Ceramic Pellet for Arsenic Removal from Groundwater

  • Shafiquzzam, Md.;Hasan, Md. Mahmudul;Nakajima, Jun
    • Environmental Engineering Research
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    • 제18권3호
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    • pp.163-168
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    • 2013
  • In this study, an innovative media, iron mixed ceramic pellet (IMCP) has been developed for arsenic (As) removal from groundwater. A porous, solid-phase IMCP (2-3 mm) was manufactured by combining clay soil, rice bran, and Fe(0) powder at $600^{\circ}C$. Both the As(III) and As(V) adsorption characteristics of IMCP were studied in several batch experiments. Structural analysis of the IMCP was conducted using X-ray absorption fine structure (XAFS) analysis to understand the mechanism of As removal. The adsorption of As was found to be dependent on pH, and exhibited strong adsorption of both As(III) and As(V) at pH 5-7. The adsorption process was described to follow a pseudo-second-order reaction, and the adsorption rate of As(V) was greater than that of As(III). The adsorption data were fit well with both Freundlich and Langmuir isotherm models. The maximum adsorption capacities of As(III) and As(V) from the Langmuir isotherm were found to be 4.0 and 4.5 mg/g, respectively. Phosphorus in the water had an adverse effect on both As(III) and As(V) adsorption. Scanning electron microscopy results revealed that iron(III) oxides/hydroxides are aggregated on the surface of IMCP. XAFS analysis showed a partial oxidation of As(III) and adsorption of As(V) onto the iron oxide in the IMCP.