• 제목/요약/키워드: X5R Temperature properties

검색결과 205건 처리시간 0.027초

소결온도에 따른 (1-x)Mg$TiO_3$-xSr$TiO_3$(x=0.02~0.08)세라믹스의 마이크로파 유전특성 (Microwave Dielectric Properties of the (1-x)Mg$TiO_3$-xSr$TiO_3$(x=0.02~0.08)Ceramics with Sintering Temperature)

  • 최의선;이성갑;배선기;이영희
    • 한국전기전자재료학회논문지
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    • 제13권12호
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    • pp.1011-1016
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    • 2000
  • The (1-x)MgTi $O_3$-xSrTi $O_3$(x=0.02~0.08) ceramics were fabricated by the conventional mixed oxide method. The sintering temperature and time were 125$0^{\circ}C$~1375$^{\circ}C$ and 2hours. The structure and microwave dielectric properties were investigated with sintering temperature and composition ratio. From the X-ray diffraction patterns, the cubic SrTi $O_3$and hexagonal MgTi $O_3$structures were coexisted in the (1-x)MgTi $O_3$-xSrTi $O_3$(x=0.02~0.08) ceramics. The dielectric constant($\varepsilon$$_{r}$) was increased and the temperature coefficient of resonant frequency($\tau$$_{f}$)was decreased with addition of SrTi $O_3$. The temperature coefficient of resonant frequency($\tau$$_{f}$) was gradually varied from negative value to positive value with increasing SrTi $O_3$. In the case of 0.96MgTi $O_3$-0.04SrTi $O_3$ceramics sintered at 130$0^{\circ}C$, the dielectric constant, quality factor and temperature coefficient of resonant frequency were 20.5, 5918(at 7.33GHz) and +10ppm/$^{\circ}C$, respectively.y.y.y.

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건조양파 제조를 위한 증숙 및 건조 조건 모니터링 (Monitoring of the Steaming and Drying Conditions for Onion Dehydration)

  • 최인학;이기동
    • 한국식품저장유통학회지
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    • 제19권5호
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    • pp.703-711
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    • 2012
  • 양파는 건강기능성이 우수한 농산물이지만 수확기가 우기와 겹쳐 비에 젖은 상태로 수확되거나 높은 수분함량으로 인하여 저장성이 낮아 양파의 저장 및 가공방법에 대한 연구가 필요하다. 본 연구는 양파의 증숙 및 건조를 위한 증숙시간($X_1$, 5~25 min), 건조온도($X_2$, $55{\sim}70^{\circ}C$) 및 건조 시간($X_3$, 4~20 hr)을 모니터링함으로서 품질이 우수한 건조양파 소재를 얻고자 하였다. 수분함량과 수분활성도에 대한 회귀식의 $R^2$는 0.9514 및 0.9455로 1% 이내에서 유의성이 인정되었으며, 건조온도와 건조시간의 영향을 받는 것으로 나타났다. 색도(Hunter's L, a & b value)에 대한 회귀식의 $R^2$가 각각 0.9419, 0.8818, 0.9360으로 5% 이내에서 유의성이 인정되었으며, 모두 건조온도와 건조시간의 영향을 주로 받았으나 b값은 증숙의 영향이 다소 있는 것으로 나타났다. 관능검사 결과 전반적인 기호도에 대한 회귀식의 $R^2$가 0.8867로 5% 이내에서 유의성이 인정되었다. 전반적인 기호도는 최적 증숙 및 건조 조건인 증숙시간 13.14 min, 건조온도 $63.11^{\circ}C$ 및 건조시간 14.49 hr에서 5.92로 나타났다.

(1-x)Mg4Ta2O9-xTiO2(x=0\sim0.9)세라믹스의 미세구조와 마이크로파 유전 특성 (Microstructure and Microwave Dielectric Properties of (1-x)Mg4Ta2O9-xTiO2(x=0\sim0.9) Ceramics)

  • 김재식;최의선;이문기;류기원;이영희
    • 한국전기전자재료학회논문지
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    • 제17권8호
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    • pp.840-845
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    • 2004
  • The microstructure and microwave dielectric properties of $(1-x){Mg}_4{Ta}_2{O}_9-xTi{O}_2(x=0\sim0.9)$ ceramics were investigated. The specimens were prepared by the conventional mixed oxide method with sintering temperature of 140$0^{\circ}C$∼150$0^{\circ}C$. To improve the quality factor and the temperature coefficient of resonant frequency,$ Ti{O}_2(\varepsilon\Gamma=100, Q\times f_\Gamma=40,000 GHz,\ta_f= +450 ppm\diagup^{\circ}C $ was added in ${Mg}_4{Ta}_2{O}_9$ceramics. The dielectric and structural properties were investigated. According to the XRD patterns, $(1-x){Mg}_4{Ta}_2{O}_9-xTi{O}_2(x=0\sim0.9)$ ceramics had the ${Mg}_4{Ta}_2{O}_9$ phase(hexagonal) and ${MgTi}_2{O}_5$phase(orthorhombic). The dielectric constant($\varepsilon_r$). quality($Qtimes{f}_r$${\tau}_f$) of the $(1-x){Mg}_4{Ta}_2{O}_9-xTi{O}_2(x=0\sim0.9)$ ceramics were 8.12∼18.59, 18,750∼186,410 GHz and -36.02∼+3.46 ppm/$^{\circ}C$, respectively.

저온소결형 (1-x)$ZnNb_2$$O_6$-$xPb_5$$Nb_4$$O_{15}$계 세라믹스의 유전특성과 미세구조에 관한 연구 (A Study on Microwave Dielectric Properties of Low-temperature Sintered (1-x) $ZnNb_2$$O_6$-$xPb_5$$Nb_4$$O_{15}$ and Microstructure)

  • 김현학;김경용;김병호
    • 한국전기전자재료학회논문지
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    • 제13권11호
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    • pp.926-931
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    • 2000
  • The microwave dielectric properties and the microstructures as a mole fraction of (1-x)ZnNb$_2$O$_{6}$-xPb$_{5}$Nb$_4$O$_{15}$ ceramics with CuV$_2$O$_{6}$, Sb$_2$O$_3$ and glass(ZNPN ceramics) was investigated. 0.98ZN-0.02PN ceramics containing 1.5 wt% CuV$_2$O$_{6}$ 1.0 wt% Sb$_2$O$_3$ and 1.0 wt% glass had a dielectric constant($\varepsilon$$_{r}$) of 23, Qxf$_{o}$ value of 15000 and TCF(Temperature Coefficient of resonance Frequency) of -25 ppm/$^{\circ}C$ and it is possible to be co-fired with Ag electrode at 90$0^{\circ}C$. As sintered temperature increases over 90$0^{\circ}C$ the grain size of ZNPN ceramics was increasing for growth and it has poor co-fired properties with Ag electrode.e.ctrode.e.e.

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Microstructure and Microwave Dielectric Properties of (1-x) Ba (Co1/3Nb2/3)O3-zBa(Zn1/3Nb2/3)O3 Ceramics

  • Ahn, Byung-Guk;Ahn, Cheol-Woo;Nahm, Sahn;Lee, Hwack-Joo
    • 한국세라믹학회지
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    • 제40권4호
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    • pp.333-339
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    • 2003
  • Ba (Co$_{1}$ 3/Nb$_{2}$ 3/)O$_3$(BCN) has a 1:2 ordered hexagonal structure. Q-value of BCN increased with increasing sintering temperature however, it significantly decreased when the sintering temperature exceeded 140$0^{\circ}C$ Ba (Co$_{1}$ 3/Nb$_{2}$ 3/)O$_3$(BZN) has the 1:2 ordered hexagonal structure and the degree of the 1 : 2 ordering decreased with the increase of the sintering temperature. The Q value of the BZN increased with increasing the sintering temperature and BZN sintered at 140$0^{\circ}C$ for 6h has a maximum Q-value. For (1-x) Ba (Co$_{1}$ 3/Nb$_{2}$ 3/)O$_3$-zBa(Zn$_{1}$ 3/Nb$_{2}$ 3/)O$_3$[(1-x)BCN-xBZN] ceramics the 1:2 ordered hexagonal structure was observed in the specimens with x$\leq$0.3 and the BaNb$_{6}$ O$^{16}$ second phase was found in the specimens with x$\geq$0.6. Grain Growth, which is rotated to the BaNb$_{6}$ O$^{16}$ second phase occurred in the specimens with x$\geq$ 0.5. In this work, the excellent microwave dielectric properties of $\tau$r=0.0 ppm/$^{\circ}C$$\varepsilon$r=34.5 and Q,$\times$f=97000GHz sere obtained for the 0.7BCV-0.3BZN ceramics sintered at 1400$0^{\circ}C$ for 20h.

Magnetic Properties of R-YIG (R = La, Nd, and Gd) Derived by a Sol-gel Method

  • Uhm, Young Rang;Lim, Jae Cheong;Choi, Sang Mu;Kim, Chul Sung
    • Journal of Magnetics
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    • 제21권3호
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    • pp.303-307
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    • 2016
  • $Y_{3-x}R_xFe_5O_{12}$ (R = La, Nd, and Gd) powder were fabricated using a sol-gel pyrolysis method. Their magnetic properties and crystalline structures were investigated using x-ray diffraction (XRD), a vibrating sample magnetometer (VSM), and $M{\ddot{o}}ssbauer$ Spectrometer. The $M{\ddot{o}}ssbauer$ spectra for the powders were taken at various temperatures ranging from 12 K to Curie temperature (Tc). The isomer shifts indicated that the valence states of Fe ions for the 16(a) and 24(d) sites have a ferric character. The saturation magnetization (Ms) increases from 32 to 34 (emu/g) for the YIG, and Nd-YIG, respectively. However, Ms decreases to 27 (emu/g) at Gd-YIG.

수분함량, 가열온도 및 가열시간에 따른 전분 반죽의 호화특성 (Gelatinization Properties of Starch Dough with Moisture Content, Heating Temperature and Heating Time)

  • 이부용;이창호;이철호
    • 한국식품과학회지
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    • 제27권3호
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    • pp.428-438
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    • 1995
  • Corn starch와 waxy corn starch를 사용하여 중간수분계의 수분함량으로 반죽을 제조하고 수분함량과 가열온도, 가열시간에 따른 전분 반죽의 호화양상을 밝혀 보고자 하였다. Corn starch와 waxy corn starch의 amylograph 호화 특성은 1% CMC를 첨가하여 측정한 호화개시 온도가 모두 약 $64^{\circ}C$로 나타났다. DSC특성은 corn starch호화 개시 온도가 $68.15^{\circ}C$, 최대호화온도가 $74.01^{\circ}C$, 호화종결 온도가 $85.65^{\circ}C$, 호화엔탈피는 3.2 cal/gram이었으며, waxy corn starch의 호화개시온도는 $68.24^{\circ}C$, 최대호화온도 $75.43^{\circ}C$, 호화종결온도 $93^{\circ}C$, 호화엔탈피는 4.2 cal/gram으로 나타났다. 수분함량$(X_1)\;36{\sim}52%)$, 가열온도$(X_2)\;60{\sim}100^{\circ}C$, 가열시간$(X_3)$ $0{\sim}2.0$분으로 가열시 corn starch와 waxy corn starch 반죽의 호화도(Y) 변화를 실험계획법으로 조사한 반응표면 회귀 방정식은 corn starch 반죽의 경우 $Y=28.659+8.638\;X_1+15.675\;X_2+7.770\;X_3-1.620\;{X_1}^2+10.790\;X_1X_2-4.220\;{X_2}^2+0.510\;X_1X_3+1.980\;X_2X_3-6.850\;{X_3}^2$ $(R^2=0.9714)$ 이었고 waxy corn starch 반죽의 경우는 $Y=32.617+12.535\;X_1+20.470\;X_2+8.608\;X_3+4.093\;{X_1}^2+13.550\;X_1X_2-4.467\;{X_2}^2+1.560\;X_1X_3+2.160\;X_2X_3-9.527\;{X_3}^2$ $(R^2=0.9621)$이었다. 즉 수분함량과 가열온도, 가열시간이 증가할수록 반죽의 호화도는 모두 증가하는 경향을 나타내었고 같은 조건에서는 waxy corn starch가 corn starch 반죽보다 $10{\sim}20%$ 정도 더 호화되는 것을 알 수 있었다. Corn starch 와 waxy corn starch 반죽의 호화 속도를 보면 가열온도 $70^{\circ}C$$80^{\circ}C$에서는 가열시간 0.5분 이내에서 비교적 빠른 속도로 반죽이 호화되고 가열시간이 그 이상으로 증가할 때도 반죽의 호화가 약간은 진행되지만 $90^{\circ}C$ 이상의 가열온도에서는 가열시간 0.5분 이내에 반죽의 호화가 급속히 일어나고 가열 시간을 증가시켜도 더이상의 호화는 일어나지 않았다. 같은 조건에서는 waxy corn starch 반죽의 호화 속도가 corn starch보다 더 빠른 것으로 나타났다. 대표적으로 52% 수분함량에서 반응속도상수(k)와 가열온도(T)사이의 관계식은 corn starch의 경우 $logk=11.1140-4.1226{\times}10^3(1/T)$, waxy corn starch의 경우 $logk=10.1195-3.7090{\times}10^3(1/T)$이었다.

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($Ba_{1-x}Sr_{x}$)O-$Sm_2O_3$-$TiO_2$세라믹스의 마이크로파 유전특성 (Microwave Dielectric Properties of the ($Ba_{1-x}Sr_{x}$)O-$Sm_2O_3$-$TiO_2$ Ceramics.)

  • 박인길;류기원;배선기;이영희
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1995년도 추계학술대회 논문집
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    • pp.5.2-8
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    • 1995
  • 0.15($Ba_{1-x}Sr_{x}$)O-$0.15Sm_2O_3$-$0.7TiO_2$(x=0∼9[m/o]ceramics were fabricated by mixed-oxide method. Microwave dielectric properties were investigated with sintering conditions aid Sr addictive. In the specimen with x=0[m/o] sintered at 1350∼1470[$^{\circ}C$], dielectric constant, quality factor and temperature coefficient of resonant frequency were 70∼74, 2800∼3300(at 3[GHz]), -1.33∼+l.66[ppm/$^{\circ}C$, respectively. Increasing the Sr additive from 0 to 5[m/o], dielectric constant and temperature coefficient of resonant frequency were increased and quality factor was decreased. In the specimen with x=r[m/o] sintered at 1375[$^{\circ}C$], 6[hr], dielectric constant, quality factor and temperature coefficient resonant frequency were 75.62, 2785(at 3[GHz]), +8.39[ppm/$^{\circ}C$], respectively.

Sb 치환에 따른 $BiNbO_4$ 세라믹스의 고주파 유전특성의 변화 (Microwave Dielectric Properties of Sb substituted $BiNbO_4$ Ceramics)

  • 임혁;오영제;최세영
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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    • pp.646-649
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    • 2002
  • The microwave dielectric properties and the structure of $Sb_2O_5$ modified $BiNb_xSb_{1-x}O_4$ ceramics were investigated. The structure of these ceramics were orthohombic phase at all sintering temperatures and there were not the second phase. These ceramics added sintering additive such as CuO and $V_2O_5$ were sinterable at a low temperature$(880^{\circ}C{\sim}960^{\circ}C)$ by liquid phase. Dielectric properties of $BiNb_xSb_{1-x}O_4$ ceramics were also improved than these of $BiNbO_4$ ceramics. The content of modified atom controlled the microstructure, dielectric constant and quality factor. As a result, We could obtain following result; ${\varepsilon}r$=42~44, $Q{\cdot}f_0$=20,000~42,000GHz, $\tau_f=-7{\sim}-28ppm/^{\circ}C$.

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Structural and Electrical Properties of WOx Thin Films Deposited by Direct Current Reactive Sputtering for NOx Gas Sensor

  • Yoon, Young-Soo;Kim, Tae-Song;Park, Won-Kook
    • 한국세라믹학회지
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    • 제41권2호
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    • pp.97-101
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    • 2004
  • W $O_{x}$-based semiconductor type thin film gas sensor was fabricated for the detection of N $O_{x}$ by reactive d.c. sputtering method. The relative oxidation state of the deposited W $O_{x}$ films was approximately compared by the calculation of the difference of the binding energy between Ols to W4 $f_{7}$2/ core level XPS spectra in the standard W $O_3$ powder of known composition. As the annealing temperature increased from 500 to 80$0^{\circ}C$, relative oxygen contents and grain size of the sputtered films were gradually increased. As the results of sensitivity ( $R_{gas}$/ $R_{air}$) measurements for the 5 ppm N $O_2$ gas, the sensitivity was 110 and the sensor showed recovery time as fast as 200 s. The other sensor properties were examined in terms of surface microstructure, annealing temperature, and relative oxygen contents. These results indicated that the W $O_3$ thin film with well controlled structure is a good candidate for monitoring and controlling of automobile exhaust.haust.t.t.t.