• Journal of the Korean Ceramic Society
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• v.27 no.5
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• pp.677-683
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• 1990

Melt-textured growth of the YBa2Cu3O7-x phase from a supercooled melt created locally aligned, barshaped grains of the orthorhombic 1-2-3 phase. Based on all the observed phenomena, the gross mechanism of the melt-textrued growth of YBa2Cu3O7-x on the (100) plane of MgO was delineated by three basic patterns of reactions. These are : (ⅰ) formation of the aligned 1-2-3 phase and the Y-rich 2-1-1 phase at the bulk region away from the (100) plane of MgO ; (ⅱ) formation of the Cu-richprecipitates at the interfacial region by the selective interface-induced precipitation of the liquid phase ; (ⅲ) condensation reaction of the entrapped Cu-rich vapor with Mg atoms during the initial stage of rapid cooling from 130$0^{\circ}C$ to 98$0^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.2
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• pp.153-157
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• 2006

In this work, the effects of plasma treatment on surface properties of semiconductive silicone rubber were investigated in terms of X-ray photoelectron spectroscopy (XPS) and contact angles, The adhesion characteristics of semiconductive-insulating interface layer of silicone rubber were studied by measuring the T-peel strengths, The results of the chemical analysis showed that C-H bonds were broken due to plasma discharge and Silica-like bonds(SiOx, x=3${\~}$4) increased, It is thought that semiconductive silicone rubber surfaces treated with plasma discharge led to an increase in oxygen-containing functional groups, resulting in improving the degree of adhesion of the semiconductive-insulating interface layer of silicone rubber. However, the oxygen plama for 20 minute produces a damaged oxidized semiconductive silicone rubber layer, which acts as a weak layer producing a decrease in T-peel strength, These results are probably due to the modifications of surface functional groups or polar component of surface free energy of the semiconductive silicone rubber.

• Journal of the Institute of Convergence Signal Processing
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• v.6 no.4
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• pp.169-175
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• 2005

In recent, implementation of the embedded system is gradually in the spotlight of world-wide by information technology(IT) engineers. By this time, an implementation of real time system is limited on image acquisition and processing system in practical. In this paper, the USB camera interface system based on the embedded linux OS is implemented using USB 2.0 camera with low cost. This system can obtain image signals into the memory via X-hyper255B processor from USB camera. It is need to initialize USB camera by the Video4Linux for the kernel device driver. From the system image capturing and image processing can be performed. It is confirmed that the image data can be transformed to packet of Network File System(NFS) and connected to the internetwork, then the data can be monitored from the client computer connected to the internetwork.

• Korean Journal of Materials Research
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• v.22 no.11
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• pp.591-597
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• 2012

For heat exchanger applications, 2-ply clad materials were fabricated by rolling of aluminum (Al) and mild steel sheets. Effects of annealing temperature on interface properties, especially on inter-layer formation and softening of strain hardened mild-steel, for Al/mild steel clad materials, were investigated. To obtain optimum annealing conditions for the Al/mild steel clad materials, annealing temperature was varied from room temperature to $600^{\circ}C$. At the annealing temperature about $450^{\circ}C$, an inter-layer was formed in an island-shape at the interface of the Al/mild steel clad materials; this island expanded along the interface at higher temperature. By analyzing the X-ray diffraction (XRD) peaks and the energy dispersive X-ray spectroscopy (EDX) results, it was determined that the exact chemical stoichiometry for the inter-layer was that of $Fe_2Al_5$. In some samples, an X-layer was formed between the Al and the inter-layer of $Fe_2Al_5$ at high annealing temperature of around $550^{\circ}C$. The existence of an X-layer enhanced the growth of the inter-layer, which resulted in the delamination of the Al/mild-steel clad materials. Hardness tests were also performed to examine the influence of the annealing temperature on the cold deformability, which is a very important property for the deep drawing process of clad materials. The hardness value of mild steel gradually decreased with increasing annealing temperature. Especially, the value of hardness sharply decreased in the temperature range between $525^{\circ}C$ and $550^{\circ}C$. From these results, we can conclude that the optimum annealing temperature is around $550^{\circ}C$ under condition of there being no X-layer creation.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.188.1-188.1
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• 2015

For present investigation Fe/MgO/Fe/Co multilayer stack is grown on Si substrate using e-beam evaporation in ultrahigh vacuum. This stack is irradiated perpendicularly by 120 MeV $Ag^{8+}$ at different fluences ranging from $1{\times}10^{11}$ to $1{\times}10^{13}ions/cm^2$ in high vacuum using 15UD Pelletron Accelerator at Inter University Accelerator Centre, New Delhi. Magnetic measurements carried out on pre and post irradiated stacks show significant changes in the shape of perpendicular hysteresis which is relevant with previous observation of re-orientation of magnetic moment along the direction of ion trajectory. However increase in plane squareness may be due to the modification of interface structure of stacks. X-ray reflectivity measurements show onset of interface roughness and interface mixing. X-ray diffraction measurements carried out using synchrotron radiation shows amorphous nature of MgO and Co layer in the stack. Peak corresponding body centered Fe [JCPDS-06-0696] is observed in X-ray diffraction pattern of pre and post irradiated stacks. Peak broadening shows granular nature of Fe layer. Estimated crystallite size is $22{\pm}1nm$ for pre-irradiated stack. Crystallite size first increases with irradiation then decreases. Structural quality of these stacks was further studied using transmission electron microscopic measurements. Thickness from these measurements are 54, 36, 23, 58 and 3 nm respectively for MgO, Fe, MgO, Fe+Co and Au layers in the stack. These measurements envisage poor crystallinity of different layers. Interfaces are not clear which indicate mixing at interface. With increase fluence mixing and diffusion was increased in the stack. X-ray absorption spectroscopic measurements carried out on these stacks show changes of Fe valence state after irradiation along with change of O(2p)-metal (3d) hybridized state. Valence state change predicts oxide formation at interface which causes enhanced in-plane magnetization.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.4
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• pp.25-29
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• 2008

Reliability and performance in metal gate/high-k device with multiple gate dielectrics were investigated. MOSFETs with a thin $HfSiO_x$ layer on a thermal Si02 dielectric as gate dielectrics exhibit excellent mobility and low interface trap density. However, the distribution of threshold voltages of $HfSiO_x/SiO_2$ stack devices were wider than those of $SiO_2$ and $HfSiO_x$ single layer devices due to the penetration of Hf and/or intermixing of $HfSiO_x$ with underlying $SiO_2$. The results of TZDB and SILC characteristics suggested that a certain portion of $HfSiO_x$ layer reacted with the underlying thick $SiO_2$ layer, which in turn affected the reliability characteristics.

• The Transactions of the Korea Information Processing Society
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• v.2 no.3
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• pp.324-334
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• 1995

Most UIMS(User Interface Management System) adopt dialogue model of user interface Implementation of UIMS influenced by adopted dialogue model of user interface strongly. While the Model-View-Controller framework has contributed to many aspects of user interface development in Smalltalk environment- user interfaces generated with MVC have highly coupled model, view, and controller classes. Such coupling impedes the reuse of software component. So In this paper, we suggest MVCD model to resolve a decline of reuse with MVC have highly coupled. User messages are not changed by Controller immediately, but sent to Dialogue object which maintains the syntatic structure of the interaction. Dialogue object invokes Model object to updates is value. Since Model objects have active values, the value change propagates to the linked Controllers. Finally, Controller object convert the new value and update the View object. User interface builder is implemented on X-window with OSF/Motif that is base on this user dialogue model.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.2
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• pp.29-37
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• 2021

The effect of Ar/N₂ two-step plasma treatment on the quantitative interfacial adhesion energy of low temperature Cu-Cu bonding interface were systematically investigated. X-ray photoelectron spectroscopy analysis showed that Ar/N₂ 2-step plasma treatment has less copper oxide due to the formation of an effective Cu4N passivation layer. Quantitative measurements of interfacial adhesion energy of Cu-Cu bonding interface with Ar/N₂ 2-step plasma treatment were performed using a double cantilever beam (DCB) and 4-point bending (4-PB) test, where the measured values were 1.63±0.24 J/m² and 2.33±0.67 J/m², respectively. This can be explained by the increased interfacial adhesion energy according phase angle due to the effect of the higher interface roughness of 4-PB test than that of DCB test.

• Journal of Electrochemical Science and Technology
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• v.9 no.3
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• pp.176-183
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• 2018

In this study, a $Li_2ZrO_3$ coated $Li[Ni_{0.8}Co_{0.15}Al_{0.05}]O_2$ (NCA) cathode was applied to an all-solid-state cell employing a sulfide-based solid electrolyte. Sulfide-based solid electrolytes are preferable for all-solid-state cells because of their high ionic conductivity and good softness and elasticity. However, sulfides are very reactive with oxide cathodes, and this reduces the stability of the cathode/electrolyte interface of all-solid-state cells. $Li_2ZrO_3$ is expected to be a suitable coating material for the cathode because it can suppress the undesirable reactions at the cathode/sulfide electrolyte interface because of its good stability and high ionic conductivity. Cells employing $Li_2ZrO_3$ coated NCA showed superior capacity to those employing pristine NCA. Analysis by X-ray photoelectron spectroscopy and electron energy loss spectroscopy confirmed that the $Li_2ZrO_3$ coating layer suppresses the propagation of S and P into the cathode and the reaction between the cathode and the sulfide solid electrolyte. These results show that $Li_2ZrO_3$ coating is promising for reducing undesirable side reactions at the cathode/electrolyte interface of all-solid-state-cells.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1051-1054
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• 2009

This paper investigates approaches for improving effective mobility of organic thin film transistors (OTFTs). We consider gate dielectric optimization, whereby we demonstrated >2x increase in mobility by using a silicon-rich silicon nitride ($SiN_x$) gate dielectric for polythiophene-based (PQT) OTFTs. We also engineer the dielectric-semiconductor ($SiN_x$-PQT) interface to attain a 27x increase in mobility (up to 0.22 $cm^2$/V-s) using an optimized combination of oxygen plasma and OTS SAM treatments. Augmentative material systems by combining 1-D nanomaterials (e.g., carbon nanotubes, zinc oxide nanowires) in an organic matrix for nanocomposite OTFTs provided a further boost in device performance.