• Journal of Microbiology and Biotechnology
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• v.34 no.2
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• pp.436-456
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• 2024

Several thermostable proteases have been identified, yet only a handful have undergone the processes of cloning, comprehensive characterization, and full exploitation in various industrial applications. Our primary aim in this study was to clone a thermostable alkaline protease from a thermophilic bacterium and assess its potential for use in various industries. The research involved the amplification of the SpSKF4 protease gene, a thermostable alkaline serine protease obtained from the Geobacillus thermoglucosidasius SKF4 bacterium through polymerase chain reaction (PCR). The purified recombinant SpSKF4 protease was characterized, followed by evaluation of its possible industrial applications. The analysis of the gene sequence revealed an open reading frame (ORF) consisting of 1,206 bp, coding for a protein containing 401 amino acids. The cloned gene was expressed in Escherichia coli. The molecular weight of the enzyme was measured at 28 kDa using sodium dodecyl sulfate polyacrylamide gel electrophoresis (SDS-PAGE). The partially purified enzyme has its highest activity at a pH of 10 and a temperature of 80℃. In addition, the enzyme showed a half-life of 15 h at 80℃, and there was a 60% increase in its activity at 10 mM Ca²⁺ concentration. The activity of the protease was completely inhibited (100%) by phenylmethylsulfonyl fluoride (PMSF); however, the addition of sodium dodecyl sulfate (SDS) resulted in a 20% increase in activity. The enzyme was also stable in various organic solvents and in certain commercial detergents. Furthermore, the enzyme exhibited strong potential for industrial use, particularly as a detergent additive and for facilitating the recovery of silver from X-ray film.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.3
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• pp.99-104
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• 2011

A stoichiometric mixture of evaporating materials for $MgGa_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. The crystal structure of these compounds has a rhombohedral structure with lattice constants $a_0=3.953\;{\AA}$, $c_0=38.890\;{\AA}$. To obtain the single crystal thin films, $MgGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the double crystal X-ray rocking curve and X-ray diffraction ${\omega}-2{\theta}$ scans. The carrier density and mobility of $MgGa_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method were $6.21{\times}10^{18}\;cm^{-3}$ and 248 $cm^2/v{\cdot}s$ at 293 K, respectively. The optical absorption of $MgGa_2Se_4$ single crystal thin films was investigated in the temperature range from 10 K to 293 K. The temperature dependence of the optical energy gap of the $MgGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's equation, $E_g(T)=E_g(0)-({\alpha}T^2/T+{\beta})$. The constants of Varshni's equation had the values of $E_g(0)=2.34\;eV$, ${\alpha}=8.81{\times}10^{-4}\;eV/K$ and ${\beta}=251\;K$, respectively.

• 보존과학연구
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• s.17
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• pp.161-182
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• 1996

In natural atmosphere, copper and copper alloy have been used to make buddha statues and ornaments of historic buildings since the abovementioned metals have corrosion resistance in some extent, and the patinaformed on the surface of the metals has provided the people aesthetic satisfaction with its beauty. But in atmosphere polluted by $SO_x$and $NO_x$, the patina layer does not work as a protective film, and it allows damages of the metal. Since 1992, Tokyo National Research Institute of Cultural Properties(TNRICP)has conducted studies on the influence of atmospheric pollution on metal cultural property held under open air. The Great Buddha Image which is located in Kamakura about 50km west from Tokyo, has been selected as one of the objects to study because it is made by copper alloy and it has stood exposed in the air for about a few hundreds years. Furthermore it is also the reason to study on it that there are many cultural properties in the surroundings of it. We have analysed the components and the structure of the corrosion products formed on the surface of the Buddha, have carried out exposure tests using the alloy samples which have simulated the components of the Great Image, and have observed climated and polluted air in order to discuss the relation between corrosion of metals in open air and conditions of the atmosphere. In this paper, the authors have described the components and the structure of the corrosion product formed on the surface of the Great Image by means of X-ray fluorescence spectroscopy and X-ray diffraction. The conclusions are as follows. (1) Sulfate patina composed mainly with brochantite were detected on the all sides of the Image and the amount of the patina is found more on the back of the Image facing to north. (2) Antlerite were detected on the back and a park of the left side facing to west, and formation of it was considered to have close relation with malignant atmosphere. (3) A big amount of chloride patina which mainly composed of atacamite were observed on the front facing to south. (4) Carbonate patina mainly composed of malachite were detected on the area where brochantite was often detected as well. It suggested that malachite had been transformed into brochantite by deteriorated atmosphere. (5) On the all sides of the Image, patina were observed together with copper oxides mainly composed of cuprous oxide. It showed that the surface layer of the Image consists of two layers : inner layer of oxide and outer layer of patina. (6) Corrosion products of lead which was a component of copperalloy were detected on the all sides : the main lead product found on the front was chlorophosphate whereas the one on the back was sulfate.

• Journal of the Korean Vacuum Society
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• v.5 no.4
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• pp.371-376
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• 1996

Au films with a thickness around 1600 $\AA$ were deposited onto glass at room temperature by ion beam sputtering with a 5 cm cold-hollow ion gun at pressure $1\times 10^{-6}-1\times 10^{-5}$ Torr. Irradiation of the Au deposited samples was carried out at pressure of $7\times 10^{-6}$ Torr. For the sputter depositions, $Ar^+$ ion energy was 1 keV, and the current density at the substrate surface was 15 $\mu$A/$\textrm{cm}^2$. Effects of 1 keV $Ar^+$ ion dose($I_d$) between $1\times 10^{16}\; and\;2\times 10^{17}\;Ar^+\textrm{cm}^{-2}$on properties such as crystallinity, surface roughness and adhesion, etc. of the films have been investigated. The Au films sputtered by $Ar^+$ ion beam had only (111) plane and the X-ray intensity of the films decreased with increase of $I_d$. The thickness of Au films reduced with Id. $R_{ms}$ surface roughness of the films increased from 16 $\AA$ at as-deposited to 1118 $\AA$ at ion dose= $2\times 10^{17}\;Ar^+\textrm{cm}^{-2}$. Adhesion of Au film on sputtered at $I_d$= $2\times 10^{17}\;Ar^+\textrm{cm}^{-2}$ was 9 times greater than that of Au film with untreated, as determined by a scratch test.

• Journal of the Microelectronics and Packaging Society
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• v.27 no.4
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• pp.19-24
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• 2020

In this work, the electrical property of Si-doped β-Ga2O3 was investigated via a post-growth annealing process. The Ga2O3 samples were annealed under air (O-rich) or N2 (O-deficient) ambient at 800~1,200℃ for 30 mins. There was no correlation between the crystalline quality and the electrical conductivity of the films within the experimental conditions explored in this work. However, it was observed the air ambient led to severe degradation of the film's electrical conductivity while N2-annealed samples exhibited improvement in both the carrier concentration and Hall mobility measured at room temperature. Interestingly, the x-ray photoemission spectroscopy (XPS) revealed that both annealing conditions resulted in higher concentration of oxygen vacancy (VO). Although it was a slight increase for the air-annealed sample, high resistivity of the film strongly suggests that VO cannot be a shallow donor in β-Ga2O3. Therefore, the enhancement of the electrical conductivity of N2-annealed samples must be originated from something other than VO. One possibility is the activation of Si. The XPS analysis of N2-annealed samples showed increasing relative peak area of Si 2p associated with SiOx with increasing annealing temperature from 800 to 1,200℃. However, it was unclear whether or not this SiOx was responsible for the improvement as the electrical conductivity quickly degraded above 1,000℃ even under N2 ambient. Furthermore, XPS suggested the concentration of Si actually increased near the surface as opposed to the shift of the binding energy of Si from its initial chemical state to SiOx state. This study illustrates the electrical changes induced by a post-growth thermal annealing process can be utilized to probe the chemical and electrical states of vacancies and dopants for better understanding of the electrical property of Si-doped β-Ga2O3.

• Journal of Sensor Science and Technology
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• v.10 no.1
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• pp.62-70
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• 2001

The ZnSe sample grown by chemical bath deposition (CBD) method were annealed in Ar gas at $45^{\circ}C$. Using extrapolation method of X-ray diffraction pattern, it was found to have zinc blend structure whose lattice parameter $a_o$ was $5.6687\;{\AA}$. From Hall effect, the mobility was likely to be decreased by impurity scattering at temperature range from 10 K to 150 K and by lattice scattering at temperature range from 150 K to 293 K. The band gap given by the transmission edge changed from $2.700{\underline{5}}\;eV$ at 293 K to $2.873{\underline{9}}\;eV$ at 10 K. Comparing photocurrent peak position with transmission edge, we could find that photocurrent peaks due to excition electrons from valence band, ${\Gamma}_8$ and ${\Gamma}_7$ and to conduction band ${\Gamma}_6$ were observed at photocurrent spectrum. From the photocurrent spectra by illumination of polarized light on the ZnSe thin film, we have found that values of spin orbit coupling splitting ${\Delta}so$ is $0.098{\underline{1}}\;eV$. From the PL spectra at 10K, the peaks corresponding to free bound excitons and D-A pair and a broad emission band due to SA is identified. The binding energy of the free excitons are determined to be $0.061{\underline{2}}\;eV$ and the dissipation energy of the donor -bound exciton and acceptor-bound exciton to be $0.017{\underline{2}}\;eV$, $0.031{\underline{0}}\;eV$, respectively.

• Journal of Radiation Protection and Research
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• v.25 no.1
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• pp.31-36
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• 2000

In radiotherapy, it may happen to radiate surrounding normal tissue because of inconsistent field size by changing patient position during treatment. We are going to analyze errors reduced by using immobilization device with Electonic portal imaging device(EPID) in this study. We had treated the twenty-one patients in pelvic region with 10 MV X-ray from Aug. 1998 to Aug. 1999 at Chungnam National University Hospital. All patients were treated at supine position during treatment. They were separated to two groups, 11 patients without device and 10 patients with immobilization device. We used styrofoam for immobilization device and measured the errors of anterior direction for x, y axis and lateral direction for z, y axis from simulation film to EPID image using matching technique. For no immobilization device group, the mean deviation values of x axis and y axis are 0.19 mm. 0.48 mm, respectively and the standard deviations of systematic deviation are 2.38 mm, 2.19 mm, respectively and of random deviation for x axis and y axis are 1.92 mm. 1.29 mm, respectively. The mean deviation values of z axis and y axis are -3.61 mm. 2.07 mm, respectively and the standard deviations of systematic deviation are 3.20 mm, 2.29 mm, respectively and of random deviation for z axis and y axis are 2.73 mm. 1.62 mm, respectively. For immobilization device group, the mean deviation values of x axis and y axis are 0.71 mm. -1.07 mm, respectively and the standard deviations of systematic deviation are 1.80 mm, 2.26 mm, respectively and of random deviation for x axis and y axis are 1.56 mm. 1.27 mm, respectively. The mean deviation values of z axis and y axis are -1.76 mm. 1.08 mm, respectively and the standard deviations of systematic deviation are 1.87 mm, 2.83 mm, respectively and of random deviation for x axis and y axis are 1.68 mm, 1.65 mm, respectively. Because of reducing random and systematic error using immobilization device, we had obtained good reproducibility of patient setup during treatment so that we recommend the use of immobilization device in pelvic region of radiation treatment.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.6
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• pp.244-252
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• 2004

A stoichiometric mixture of evaporating materials for $CuInSe_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $_CuInSe2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuInSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $9.62\times10^{16}/\textrm{cm}^3$, 296 $\textrm{cm}^2$/Vㆍs at 293 K, respectively. The temperature dependence of the energy band gap of the $CuInSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T) = 1.1851 eV -($8.99\times10^{-4} eV/K)T^2$(T + 153 K). The crystal field and the spin-orbit splitting energies for the valence band of the CuInSe$_2$ have been estimated to be 0.0087 eV and 0.2329 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the Δso definitely exists in the $\Gamma$6 states of the valence band of the $CuInSe_2$. The three photocurrent peaks observed at 10 K are ascribed to the $A_1-, B_1$-와 $C_1$-exciton peaks for n = 1.

• Maxillofacial Plastic and Reconstructive Surgery
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• v.23 no.2
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• pp.107-114
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• 2001

Objectives : To compare jaw bone density of young adults (control group) and post-menopausal women(experimental group) in periapical and panoramic film. Materials and Methods : The bone mineral density values of lumbar and femur were measured by dual-energy X-ray absorptiometry(DEXA) and T scores of lumbar were obtained. T scores were classified into 3 group (T<-2.5, $-2.5{\leqq}T<-1$, $-1{\leqq}T$). Radiographic densities of alveolar bones were measured from interdental bones of premolar, molar areas in the maxilla and mandible and expressed into copper step wedge thickness by Scion $Image^{(R)}$ program. We considered these values of step wedge thickness as bone density of alveolar bone. Panorama mandibular index(PMI) was calculated by the method that the height of the inferior cortex of the mandible was divided by the height from the lower border of the mandible to the superior edge of the mental foramen. Bone density of alveolar bone and PMI were analysed statistically. Results : There were significant differences in bone mineral density of lumbar and femoral neck between control and experimental groups. There were also significant differences in bone density of premolar and molar area of jaw between control and experimental groups by MANOVA test. When considered lumbar T variables, there was only difference in interdental bone density of maxillary molar area between control and experimental group, but there was interaction. Interdental bone density of experimental group was appeared higher in $-1{\leqq}T$ group and lower in T<-2.5 group than control group. There was significant difference in PMI between control and experimental groups, but there was also inter action, thus, PMI of experimental group was appeared higher in $-1{\leqq}T$ group and lower in T<-2.5 group than control group. Conclusion : There were significant differences of alveolar density and cortical bone thickness between young men and post-menopausal women in periapical and panoramic film. These differences were dependent on lumbar T.

• The Journal of Korean Academy of Prosthodontics
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• v.38 no.5
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• pp.704-723
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• 2000

This study was undertaken to evaluate the tensile bond strength of In-Ceram alumina core treat-ed by ion assisted reaction(IAR). Ion assisted reaction is a prospective surface modification technique without damage by a keV low energy ion beam irradiation in reactive gas environments or reactive ion itself. 120 In-Ceram specimens were fabricated according to manufacturer's directions and divided into six groups by surface treatment methods of In-Ceram alumina core. SD group(control group): sandblasting SL group: sandblasting + silane treatment SC group: sandblasting + Siloc treatment IAR I group: sandblasting + Ion assisted reaction with argon ion and oxygen gas IAR II group: sandblasting + Ion assisted reaction with oxygen ion and oxygen gas IAR III group: sandblasting + Ion assisted reaction with oxygen ion only For measuring of tensile bond strength, pairs of specimens within a group were bonded with Panavia 21 resin cement using special device secured that the film thickness was $80{\mu}m$. The results of tensile strength were statistically analyzed with the SPSS release version 8.0 programs. Physical change like surface roughness of In-Ceram alumina core treated by ion assistad reaction was evaluated by Contact Angle Measurement, Scanning Electron Microscopy, Atomic Force Microscopy; chemical surface change was evaluated by X-ray Photoelectron Spectroscopy. The results as follows: 1. In tensile bond strength, there were no statistically significant differences with SC group, IAR groups and SL group except control group(P<0.05). 2. Contact angle measurement showed that wettability of In-Ceram alumina core was enhanced after IAR treatment. 3. SEM and AFM showed that surface roughness of In-Ceram alumina core was not changed after IAR treatment. 4. XPS showed that IAR treatment of In-Ceram alumina core was enabled to create a new functional layer. A keV IAR treatment of In-Ceram alumina core could enhanced tensile bond strength with resin cement. In the future, this ion assisted reaction may be used effectively in various dental materials as well as in In-Ceram to promote the bond strength to natural tooth structure.