• Applied Chemistry for Engineering
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• v.25 no.6
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• pp.577-580
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• 2014

Indium hydroxy sulfide ($In(OH)_xS_y$) as a cadmium (Cd)-free buffer layer for $CuInGaSe_2$ (CIGS) solar cells was prepared by the chemical bath deposition (CBD) and the reaction time was optimized. The band gap energy and transmittance data alongside the thickness results from the direct observation with focused ion beam system (FIB) could be a powerful tool for optimizing the conditions. In addition, X-ray diffractometer (XRD), X-ray photoelectron microscopy (XPS), and scanning electron microscope (SEM) were also employed for the layer characterization. The results indicated that the optimum reaction time for $In(OH)_xS_y$ buffer layer deposition by CBD was 20 min at $70^{\circ}C$ under the conditions employed. At the optimum conditions, the buffer layer thickness was near 57 nm and the band gap energy was 2.7 eV. In addition, it was found that there was no XPS peak shift in between the buffer layers deposited on molybdenum (Mo)/glass and that on CIGS layer.

• Journal of Powder Materials
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• v.7 no.4
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• pp.197-204
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• 2000

Gas atomization mechanical alloying and hot pressing have successfully made high temperature Al-9.45Fe-4.45Cr alloy. The microstructure and mechanical properties of this alloy has been studied by using optical microscope, scanning electron microscope, transmission electron microscope, X-ray diffractometer and compressive tester. It contains high concentration of transition elements of Fe and Cr, which form thermally stable dispersoids in the aluminum matrix. Proper oxidation of powders during ball milling strengthens the bulk extrudates by providing the obstacle particles. The oxide particles are very chemically and thermally stable and prevent the coarsening of the intermediate compounds.

• Journal of Welding and Joining
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• v.20 no.2
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• pp.77-81
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• 2002

Many kinds of Pb-free solder have been investigated because of the environmental concerns. Sn-Ag-Cu system is well blown as most competitive Pb-free solder. However, since Sn-Ag-Cu system has relatively high melting point compared to Sn-Pb eutectic, it may a limitation, the some application. In this study, Bi and In contained solder of $Sn_3Ag_8Bi_5In$ which has relatively lower melting point, $188~204^{\circ}C$, was investigated. $Sn_3Ag_8Bi_5In$ solder ball of $500\mu\textrm{m}$ diameter was set on the Ni/Cu/Cr-UBM and reflow soldered in the range of $220~240^{\circ}C$ for 5~15s. The maximum shear strength of the solder ball was around 170mN by reflowing at $240^{\circ}C$ for 10s. Intermetallic compound formed on the UBM of Si-wafer was analysed by SEM(scanning electron microscope) and XRD(X-ray diffractometer).

• Journal of the Korean institute of surface engineering
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• v.32 no.6
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• pp.703-708
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• 1999

Silicides have been used extensively in ULSI logic device fabrication as contact materials for the active areas as well as the poly- Si gates. NiSi is a promising candidate for submicron device application due to less volume expansion, low formation temperature, little silicon consumption, and large stable processing temperature window. In this report, the microstructure of nickel silicides fabricated with a thermal evaporator has been investigated. We observed systematic transformation of Ni silicides of $Ni_2$Si, NiSi, $NiSi_2$, as annealing temperature increases. All the silicides have been identified by a X-ray diffractometer (XRD). The cross-sectional microstructure of silicides was examined by a transmission electron microscope (TEM) equipped with a energy dispersive spectrometer(EDS). The surface roughness of silicides was measured by scanning probe microscope(SPM). Although we observed thin oxide layer existed at the $Ni/NiSi_{x}$ interface, we fabricated successfully $550\AA$-thick planar Ni-monosilicide at the temperature range of$ 400~700^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.35 no.3
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• pp.239-244
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• 1998

Iron complexes were prepared using ferric nitrate and ethylene glycol as starting materials and the ul-trafine ${\alpha}-Fe_2O_3$ particles with the sizes smaller than 200nm were obtained by the pyrolysis of iron com-plexes at over $350^{\circ}C$ In addition the decomposition mechanism of the synthesized iron complexes was in-vestigated by differential scanning calorimeter X-ray diffractometer and IR spectrometer. Transmission electron microscopy and BET method were performed to analyze the effects of ferric nitrate contents and reaction temperatures on the size and shape of the particles.

• Proceedings of the Korean Institute of Building Construction Conference
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• 2015.05a
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• pp.36-37
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• 2015

The purpose of this study is to investigate pozzolanic reactivity of the rice straw ash. This study focused on rice straw ash properties at various burning temperature and duration as a mineral admixture for mortar and concrete, and provide the crystalline state and molecular structure of rice straw ash. X.R.D and N.M.R were performed on rice straw ashes to identify pozzolanic reactivity.

• Journal of Magnetics
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• v.11 no.2
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• pp.87-89
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• 2006

CoFeV thin film alloys were fabricated by electrodeposition, and the dependences of their magnetic properties on the current density were investigated using an X-ray diffractometer and a vibrating sample magnetometer. The deposited Co increased from about 45 to 60 wt.% with increasing current density until $25mA/cm^2$ whereas the deposited Fe decreased from about 55 to 40 wt.% with increasing current density until $25mA/cm^2$. The deposited V, about 2 wt.%, was independent of the current density. The current efficiencies of electrodeposition decreased linearly from about 40 to 29% with increasing current density. The X-ray diffraction measurement showed that all peaks of the CoFeV films were consistent with those of a typical Co hcp and Fe bcc mixed phase. An increase in the current density decreased the grain size and increased the lattice constant. The saturation magnetization increased from about 2.2 to 2.5 T with increasing current density. The coercivity measured in the perpendicular direction decreased from 260 to 120 Oe with increasing current density; a drastic drop of 60 Oe occurred at $5mA/cm^2$. The coercivity measured in the in-plane direction remained almost unchanged, at about 20 Oe, with increasing current density.

• Food Science and Biotechnology
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• v.17 no.1
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• pp.20-25
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• 2008

Effects of commercial and lab-generated gellan gums on the textural properties, structure, and aging of wheat and maize starch gels were investigated using a rapid visco-analyzer (RVA), rheometer, scanning electron microscope (SEM), and X-ray diffractometer. Gellan and guar gums increased the peak and final viscosities, but xanthan gum and gum arabic reduced them. The maize starch had higher breakdown viscosity than the wheat starch, regardless of the type of gum. The hardness of all starch gels increased during storage, but their cohesiveness and springiness decreased. The degree of the gel hardness showed higher in maize starch than in wheat starch and the effect of gum addition had a difference with gum type. The wheat starch-guar and -gellan gum mixed gels showed higher elasticity and cohesiveness after storage. The starch-gellan gum mixed gels had dense and stable network structures, and were well maintained even after 7 days of storage. Most of the gums had anti-aging effect on X-ray diffraction pattern of starch gels.

• Applied Chemistry for Engineering
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• v.21 no.6
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• pp.676-679
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• 2010

Nano composite particles were synthesized from a bulk ZrVFe alloy ingot by transferred DC thermal plasma. Effects of plasma gas flow rate on the characteristics of the produced nano composite particles were investigated. The characteristics of the synthesized powder were analyzed by field scanning electron microscopy (FE-SEM), light scattering particle size analyzer (PSA), energy dispersive X-ray spectroscopy (EDS), X-ray diffractometer (XRD), and Brunauer-Emmett-Teller (BET) surface area analyzer. As the flow rate of plasma gas increased from 20 L/min to 40 L/min, the average particle size decreased from 91 nm to 55 nm, the particle size distribution became narrower, the surface area increased from $200\;m^2/g$ to $255\;m^2/g$, the particle composition was nearly unaffected, and the particle crystallinity was improved.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.1 no.1
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• pp.82-91
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• 1991

Molecular beam epitaxial growth of GaAs on Si substrate and the results on its analysis are reported. Epitaxy was performed on two different types of the substrate under various grwth conditions, and was analyzed by scanning and transmission electron microscopes, X-ray diffractometer, photoluminescence and Hall measurements. GaAs epitaxial layer has better crystalline quality when it was grown on a tilt-cut substrate. The stress seems to be releaxed more easily when multi-quantum well was introduced in the buffer layer. The epilayer was doped unintentionally with Si during growth due to the diffusion of the substrate. Also observed is that the quantum efficiency of excitonic radiative recombination of the heteroepitaxy is not as good as that of the homoepitaxy in the same doping level.