• Composites Research
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• v.36 no.3
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• pp.167-172
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• 2023

The manufacturing technology of composite material is applicable with filler characteristics maintaining low cost, flexibility, and easy process to develope the various functional composite materials. To realize functional composites, various researches on the high performance of composite materials using graphene as a filler is being actively conducted. In this study, physical and chemical properties were investigated using graphene to improve high functional properties. Graphene oxide (GO) was prepared using graphane nanoplatelet (GNP), and reduced graphene oxide (R-GO) was formed by reducing GO. The physical properties of GO and R-GO were analyzed, and the reliability of the manufactured method was reviewed by comparing that of GNP results. As a result of analysis by Raman spectroscopy, in the case of R-GO, it was confirmed that the intensity of D-peak and G-peak decreased compared to GO, and an increase of 0.08 was observed through the ratio of ID/IG. For the FTIR results, GO and RGO has a repeating C-C and C=C connection structure unlike GNP. GO and R-GO show clear peaks for C-O bond, C=C bond, C=O bond, and O-H bonding. As a result of X-ray diffraction analysis, GNP showed a wide diffraction peak at 25.86° of (002) plane characteristics, whereas GO and R-GO showed peaks corresponding to (001) and (100) planes. It was also found that the interlayer distance of GO increased by about 2.6 times compared to GNP.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.34 no.3
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• pp.79-85
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• 2024

We investigated the crystal structural property and chemical bonding nature of cellulose nanocrystal extracted directly from cotton cellulose using high-pressure homogenizer. The nanowire-like cellulose nanocrystals were randomly distributed in the form of a dense mesh. Based on calculating the interplanar distance of the Bragg-diffracted crystal plane observed through X-ray diffraction (XRD) analysis, it was found that the cellulose nanocrystals formed by high-pressure homogenizer had a monoclinc crystal structure, corresponding to the cellulose Iβ sub-polymorph. Solid-state nuclear magnetic resonance (NMR) analysis for the quantitatively evaluation of the amorphous region in cellulose nanocrystals revealed that the crystallinity index of cellulose nanocrystals was calculated to be 53.06 %. The O/C ratio of the surface of cellulose nanocrystal was estimated to be 0.82. Further analysis showed that chemical bonds of C-C bond or C-H bond, C-O bond, O-C-O bond or C=O bond, and O-C=O bond were the main chemical bonding states of the cellulose nanocrystal surface.

• The Korean Journal of Ceramics
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• v.6 no.2
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• pp.138-142
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• 2000

Thin film $LiNbO_3$MFS (metal-ferroelectric-semiconductor) capacitor showed improved characteristics such as low interface trap density, low interaction with Si substrate, and large remanent polarization. This paper reports ferroelectric $LiNbO_3$thin films grown directly on p-type Si (100) substrates by 13.56 MHz RF magnetron sputtering system for FRAM (ferroelectric random access memory) applications. RTA (rapid thermal anneal) treatment was performed for as-deposited films in an oxygen atmosphere at $600^{\circ}C$ for 60sec. We learned from X-ray diffraction that the RTA treated films were changed from amorphous to poly-crystalline $LiNbO_3$which exhibited (012), (015), (022), and (023) plane. Low temperature film growth and post RTA treatments improved the leakage current of $LiNbO_3$films while keeping other properties almost as same as high substrate temperature grown samples. The leakage current density of $LiNbO_3$films decreased from $10^{-5}$ to $10^{-7}$A/$\textrm{cm}^2$ after RTA treatment. Breakdown electric field of the films exhibited higher than 500 kV/cm. C-V curves showed the clockwise hysteresis which represents ferroelectric switching characteristics. Calculated dielectric constant of thin film $LiNbO_3$illustrated as high as 27.9. From ferroelectric measurement, the remanent polarization and coercive field were achieved as 1.37 $\muC/\textrm{cm}^2$ and 170 kV/cm, respectively.

• Asian-Australasian Journal of Animal Sciences
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• v.22 no.12
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• pp.1633-1639
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• 2009

This study investigated the effect of maternal undernutrition during late pregnancy on the growth and development of ovine fetal visceral organs. One hundred Mongolian ewes were mated at a synchronized oestrus and divided into three groups and offered 0.175 MJ ME $kgw^{-0.75}\;d^{-1}$ (Restricted Group1; RG1), 0.33 MJ ME $kgw^{-0.75}\;d^{-1}$ (Restricted Group2; RG2) and ad libitum access to feed (Control Group; CG) during late pregnancy (90 days). Selected animals in each group were slaughtered immediately at d 90 of pregnancy and after parturition (neonatal lambs), and major visceral organs were removed and weighed separately. The results indicated that the weights of lung (p<0.01), spleen (p<0.01), heart (p<0.05), liver (p<0.05) and abomasum (p<0.01) in RG1 were significantly lighter than those of CG. For RG2, only the weights of the lung (p<0.05) and spleen (p<0.01) were significantly lighter than those of CG; when expressed as a percentage of body weight, significance was retained in the spleen (p<0.01) for both restricted groups, but the percentage of brain in RG1 was significantly higher than that in CG (p<0.01). For lung and spleen, the amount of DNA was significantly lower (p<0.01) in both groups of restricted neonatal lambs compared to CG; however, there was a significant difference only between RG1 and CG for protein: DNA ratio (p<0.01). The DNA content of kidney, abomasum and jejunum were decreased (p<0.05) in RG1 neonatal lambs, but protein: DNA ratio in the liver was decreased compared with that of CG (p<0.05). The plane of maternal undernutrition during late pregnancy had a significant effect on the growth and development of fetal visceral organs, which altered ontogeny of fetal organ growth and development. These perturbations in fetal visceral development may have significant implications on postnatal growth and adult health.

• The Journal of the Korea Contents Association
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• v.12 no.8
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• pp.380-387
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• 2012

A complex seismic survey, which is nondestructive inspection, is used often recently in estimating the location of reclaimed cultural assets. Such a method is the best way to estimate the location of cultural assets most effectively in a short time at a construction site. This study estimated the reclamation location of a cultural asset by using magnetic gradient survey, earth resistivity survey, and ground penetrating radar survey (GPR) in order to figure out the distribution territory in the area with possibility of creation of reclaimed cultural assets in the past. As a result, it was located at +15m on the X axis and +90m on the Y axis on the floor plane coordinate of the study target area. It was shown that the major axis is about 20m long in the north-northeast direction and the width is about 5m. The depth of development distribution of anomaly zone was estimated as about 1.5~3.0m. Geophysical survey is expected to be used as a efficient and accurate way to excavate the reclaimed cultural assets in future.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.281.1-281.1
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• 2016

Transition metal dichalcogenides (TMDCs) are promising layered structure materials for next-generation nano electronic devices. Many investigation on the FET device using TMDCs channel material have been performed with some integrated approach. To use TMDCs for channel material of top-gate thin film transistor(TFT), the study on high-k dielectrics on TMDCs is necessary. However, uniform growth of atomic-layer-deposited high-k dielectric film on TMDCs is difficult, owing to the lack of dangling bonds and functional groups on TMDC's basal plane. We demonstrate the effect of remote oxygen plasma pretreatment of large area synthesized few-layer MoSe2 on the growth behavior of Al2O3, which were formed by atomic layer deposition (ALD) using tri-methylaluminum (TMA) metal precursors with water oxidant. We investigated uniformity of Al2O3 by Atomic force microscopy (AFM) and Scanning electron microscopy (SEM). Raman features of MoSe2 with remote plasma pretreatment time were obtained to confirm physical plasma damage. In addition, X-ray photoelectron spectroscopy (XPS) was measured to investigate the reaction between MoSe2 and oxygen atom after the remote O2 plasma pretreatment. Finally, we have uniform Al2O3 thin film on the MoSe2 by remote O2 plasma pretreatment before ALD. This study can provide interfacial engineering process to decrease the leakage current and to improve mobility of top-gate TFT much higher.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.70-73
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• 2002

Thin films of vanadium oxide($VO_{x}$) have been deposited by r.f. magnetron sputtering from $V_{2}O_{5}$ target in gas mixture of argon and oxygen. The oxygen/(oxygen+argon) partial pressure ratio of 0% and 8% is adopted. Crystal structure, chemical composition, molecular structure and optical properties of films sputter-deposited under different oxygen gas pressures and in-situ annealed in vacuum at $400^{\circ}C$ for 1h and 4h are characterized through XRD. RBS, FTlR and optical absorption measurements. The films as-deposited are amorphous and those annealed for time longer than 4h are polycrystalline. $V_{2}O_{5}$ and lower oxides co-exist in sputter-deposited films and as the oxygen partial pressure is increased the films become more stoichiometric $V_{2}O_{5}$. When annealed at $400^{\circ}C$, the as-deposited films are reduced to a lower oxide. It is observed that the oxygen atoms located on the V-O plane of $V_{2}O_{5}$ layer participate more readily in the oxidation and reduction process. The optical transmission of the films annealed in vacuum decreases considerably than the as-deposited films and the optical absorption of all the films increases rapidly between 400 and 550nm.

• Asian-Australasian Journal of Animal Sciences
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• v.21 no.3
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• pp.371-375
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• 2008

This study investigated the effects of maternal undernutrition during late pregnancy on lamb birth weight. 45 Mongolian ewes, synchronized for oestrus and then mated, were divided into four groups and offered 0.86 MJME/kgw-0.75d-1 (control group; CG : ad libitum access to feed), $0.44MJME/kgw^{-0.75}d^{-1}$ (Restricted Group 3; R3), $0.33MJME/kgw^{-0.75}d^{-1}$ (Restricted Group 2; R2) and $0.20MJME/kgw^{-0.75}d^{-1}$ (Restricted Group 1; R1) respectively during late pregnancy (90-150 days). During restriction, maternal net body weight loss, insulin and NEFA concentrations and lamb birth weight were measured. The results indicated that loss of maternal body weight in R3, R2 and R1 was 4.42, 7.23, 11.13 kg respectively, which was significantly (p<0.01) higher than that in CG (0.93 kg). Insulin concentrations of the ewes in R1, R2 and R3 were lower and were significantly different (p<0.05) between restricted groups and CG at 124 d of pregnancy. NEFA concentrations in all groups tended to decrease from 90d of gestation to parturition and in R1 were significantly (p<0.05) lower than in CG at 124 d of gestation. Lamb birth weight in R1 was significantly lower than in R2, R3 and CG (p<0.05). In conclusion, with decreasing supply of maternal nutrition, the retardation of fetal growth became worse. When the plane of nutrition was below $0.33MJME/kgw^{-0.75}d^{-1}$, significant effects of maternal undernutrition on lamb birth weight were observed.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.1
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• pp.63-70
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• 1994

Single crystals of the superionic conductor ${\beta}-Ag_3SI$ were prepared by thermal treatmentr from the reactant mixture of AgI and $Ag_2S$. The growing single crystals were made to spherical shape of $200{mu}m$ in diameter. The detailed structures analyses revealed that $Ag^+$ in ${\beta}-Ag_3SI$ distribute on 12h site of 4-coordination inpreference to 3c site of 6-coordination. The effective one-particle potential (o.p.p.). of $Ag^+$ along [110] direction was evaluated from the probability density function(p.d.f.) Activation energy calculated from the o.p.p. curve has been found to be 0.012 eV for the diffusion of $Ag^+$ on (001) plane in the ${\beta}-Ag_3SI$ structure.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.1
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• pp.59-69
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• 1997

The growth and microstructural characterization of epitaxial yttrium silicide ($YSi_2$) on the (100)Si substrate are investigated. The $YSi_2$ film grow epitaxilly through the solid phase reaction during vacuum annealing above $400^{\circ}C$. The epitaxial relationships between the hexagonal $YSi_2$ film and the (100)Si substrate are [0001]$YSi_2$//[011]Si and [0001]$YSi_2$//[011]Si in the (1100)$YSi_2$//(100)Si plane relation. The YSi$_2$ film consists of the two types of domains which have two different azimuthal orientations making an angle of $90^{\circ}$ to each other. The two types of domains in the $YSi_2$film are equivalent in volume fraction and crystalline quality, which has been proved from the equivalent integrated intensities of (2201) asymmetric reflection of X-ray diffraction. The formation of a double -domain structure is discussed on the basis of geometrical matching at interface between the (1100)$YSi_2$ film and the (100)Si substrate, and growth model is proposed.