• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.27 no.2B
• /
• pp.151-159
• /
• 2002

Frequency synthesizer is an essential part for developing high speed frequency hopping radio. A high speed synthesizer using DDS driven PLL technique is designed and implemented for a X-band portable satellite terminal. It generates transmitter and receiver frequency ranging 6600∼7100MHz and 6140∼6640MHz, respectively by using 102.4MHz local oscillator, Its lock time is below 15 $\mu$sec and Its phase noise is below -754dBc at 1KHz offset Sequency.

• Journal of Environmental Health Sciences
• /
• v.32 no.6
• /
• pp.560-565
• /
• 2006

Extract of DNA for analysis of fragile X syndrome is usually performed by blood, the researches using hair root as specimen have been gradually spread. In this study, analyze fra X gene of the patients in mentally retarded children facilities was conducted using hair root DNA with molecular biologic test (PCR). The number of total subjects was 24, boys were 12, the average age was $17({\pm}3)$, and girls were 12, the average age was $18({\pm}2)$. In girls, normal size of band of 222 bp appeared in all lanes. Also, in all lanes except control in 517 bp, micro band appeared. Moreover, with appearance of band of 1198bp in lanes 2, 3, 4, 5, it is estimated that it is the band of full mutation whose CGG repeated sequences are more than 200. But it showed the peculiarity that it appeared with normal band in all the same lanes, thus it is not reasonable to judge it is the band of full mutation and further studies are needed. These results appeared in 50%, 6 of 12 mentally retarded girls. As the result of mentally retarded boys, normal band appeared in about 222 bp in control, however in experiment group, normal band did not appear. In 43%, 7 out of 12 boys, band did not either appeared in 1198bp, which showed different patterns from that of girls.

• Proceedings of the KSRS Conference
• /
• 2008.10a
• /
• pp.332-335
• /
• 2008

Newly developing SAR (Synthetic Aperture Radar) sensors commonly include high resolution X-band those data are expected to contribute various applications. Recent few studies are presenting potential of X-band SAR data in forest related application. This study tried to investigate the relationship between forest stand parameters and multi-band SAR normalized backscattering. Multi-band SAR data was radiometric corrected to compare signal from different forest stand condition. Then correlation coefficients were estimated between attribute of forest stand map and normalized backscattering coefficients. Although overall correlation coefficients are not high, only X-band shows strong relationship with DBH class than other bands. The signal of C- and L-band is composed of a large number of discrete tree components such as leaves, stems, even background soil. In forest, strength of radar backscattering is affected by complex parameters. Further study might be considered more various forest stand parameters such as canopy density, stand height, volume, and biomass.

• Analytical Science and Technology
• /
• v.5 no.1
• /
• pp.115-120
• /
• 1992

The upper limit of solid solution of $Al_2O_3$ in $LiTaO_3$ was investigated using X-ray diffraction and Raman spectroscopy. By substituting cations in $LiTaO_3$ with $Al^{3+}$, the melting temperature was lowed and the ferroelectric properties can be improved. It is easier at lower temperature to fabricate the single crystal used for SAW filters and IR sensors. From the measured lattice constants and Raman band broadening, the solubility limit was X=0.25mol in $Li_{1-X}Al_{2X}Ta{1-X}O_3$, above which $Al_2O_3$ was obsered as a second phase. The Raman band of sintered $LiTaO_3$ was compared with that of the single crystal to see the effect of grain size on the band broadening.

• The Journal of the Korea institute of electronic communication sciences
• /
• v.12 no.5
• /
• pp.783-790
• /
• 2017

The energy band gaps and the bowing parameters of zincblende GaP1-xNx on the variation of temperature and composition are determined by using an empirical pseudopotential method with another virtual crystal approximation, which includes the disorder effect. The bowing parameter calculated is 13.1eV and the energy band gaps are decreased rapidly for GaP1-xNx ($0{\leq}x{\leq}0.05$, 300K). A refractive index n and a function of real dielectric constant ${\varepsilon}$ are calculated by the results of energy band gaps and the calculation results of energy band gaps are consistent with experimental values.

• Journal of Korean Society of Coastal and Ocean Engineers
• /
• v.33 no.3
• /
• pp.101-109
• /
• 2021

Wave observations using a marine X-band radar are conducted by analyzing the backscattered radar signal from sea surfaces. Wave parameters are extracted using Modulation Transfer Function obtained from 3D wave number and frequency spectra which are calculated by 3D FFT of time series of sea surface images (42 images per minute). The accuracy of estimation of the significant wave height is, therefore, critically dependent on the quality of radar images. Wave observations during Typhoon Maysak and Haishen in the summer of 2020 show large errors in the estimation of the significant wave heights. It is because of the deteriorated radar images due to raindrops falling on the sea surface. This paper presents the algorithm developed to increase the accuracy of wave heights estimation from radar images by adopting convolution neural network(CNN) which automatically classify radar images into rain and non-rain cases. Then, an algorithm for deriving the Hs is proposed by creating different ANN models and selectively applying them according to the rain or non-rain cases. The developed algorithm applied to heavy rain cases during typhoons and showed critically improved results.

• The Journal of the Korea institute of electronic communication sciences
• /
• v.16 no.6
• /
• pp.1053-1058
• /
• 2021

This paper presents the multi-band mixer which converts a X-, K- and Ka-band adaptively by adjusting the gate-bias voltage of an active device. The proposed mixer presented a conversion loss of -10 dB at -0.8 V gate-bias voltage for X-band, a conversion loss of -9 dB at -0.3 V gate-bias voltage for K-band and for Ka-band, a conversion loss of -7 dB at -0.2 V gate-bias voltage under the LO power of +6.0 dBm. The 1dB compression point (P1dB) is +0.5 dBm for all band.

• Proceedings of the IEEK Conference
• /
• 1999.11a
• /
• pp.159-162
• /
• 1999

In this paper, we have designed and fabricated a MMIC power amplifier for X-band using AlGaAs/InGaAs/GaAs PM-HEMTs and passive devices such as Ti thin film resistors, rectangular spiral inductors and MIM capacitors. The fabricated MMIC power amplifier for X-band shows that S/ sub 21/ and S$_{11}$ are 14.804 ㏈ and -29.577 at 8.18 GHz, respectively. The chip size is 1.86$\times$1.29 $\textrm{mm}^2$.>.>.

• Journal of IKEEE
• /
• v.23 no.2
• /
• pp.425-430
• /
• 2019

This work describes the design and characterization of a X-band power amplifier (PA) monolithic microwave integrated circuit (MMIC) using a $0.25{\mu}m$ gate length gallium nitride (GaN) high electron mobility transistor (HEMT) technology. The developed X-band power amplifier MMIC has small signal gain of over 22.7 dB and saturated output power of 43.02 dBm (20.04 W) over the entire band of 9 to 10 GHz. Maximum saturated output power is a 43.84 dBm (24.21 W) at 9.5 GHz. Its power added efficiency (PAE) is 41.0~51.24% and the chip dimensions are $3.7mm{\times}2.3mm$, generating the output power density of $2.84W/mm^2$. The developed GaN power amplifier MMIC is expected to be applied in a variety of X-band radar applications.

• Journal of IKEEE
• /
• v.28 no.1
• /
• pp.33-37
• /
• 2024

In this paper, we report the design and the measurement of a X-band low noise amplifier (LNA) monolithic microwave integrated circuit (MMIC) using a 0.25 ㎛ gate length microstrip GaN-on-SiC high electron mobility transistor (HEMT) technology. The developed X-band GaN-based LNA MMIC achieves small signal gain of 22.75 dB ~ 25.14 dB and noise figure of 1.84 dB ~ 1.94 dB in the desired band of 9 GHz to 10 GHz. Input and output return loss values are -11.36 dB ~ -24.49 dB and -11.11 dB ~ -17.68 dB, respectively. The LNA MMIC can withstand 40 dBm (10 W) input power without performance degradation. The chip dimensions are 3.67 mm × 1.15 mm. The developed GaN-based LNA MMIC is applicable to various X-band applications.