• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.6
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• pp.1-6
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• 2011

A transparent oxide thin film transistors (Transparent Oxide-TFT) have been fabricated by RF magnetron sputtering at room temperature using amorphous indium zinc oxide (a-IZO) as both of active channel and source/drain, gate electrodes and co-sputtered $HfO_2-Al_2O_3$ (HfAIO) as gate dielectric. In spite of its high dielectric constant > 20), $HfO_2$ has some drawbacks including high leakage current and rough surface morphologies originated from small energy band gap (5.31eV) and microcrystalline structure. In this work, the incorporation of $Al_2O_3$ into $HfO_2$ was obtained by co-sputtering of $HfO_2$ and $Al_2O_3$ without any intentional substrate heating and its structural and electrical properties were investigated by x-ray diffraction (XRD), atomic force microscopy (AFM) and spectroscopic ellipsometer (SE) analyses. The XRD studies confirmed that the microcrystalline structures of $HfO_2$ were transformed to amorphous structures of HfAIO. By AFM analysis, HfAIO films (0.490nm) were considerably smoother than $HfO_2$ films (2.979nm) due to their amorphous structure. The energy band gap ($E_g$) deduced by spectroscopic ellipsometer was increased from 5.17eV ($HfO_2$) to 5.42eV (HfAIO). The electrical performances of TFTs which are made of well-controlled active/electrode IZO materials and co-sputtered HfAIO dielectric material, exhibited a field effect mobility of more than $10cm^2/V{\cdot}s$, a threshold voltage of ~2 V, an $I_{on/off}$ ratio of > $10^5$, and a max on-current of > 2 mA.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.5
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• pp.173-181
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• 2015

A stoichiometric mixture of evaporating materials for $BaIn_2S_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $BaIn_2S_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by double crystal X-ray diffraction (DCXD). The carrier density and mobility of $BaIn_2S_4$ single crystal thin films measured from Hall effect by van der Pauw method are $6.13{\times}10^{17}cm^{-3}$ and $222cm^2/v{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $BaIn_2S_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=3.0581eV-(3.9511{\times}10^{-3}eV/K)T^2/(T+536K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $BaIn_2S_4$ have been estimated to be 182.7 meV and 42.6 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $BaIn_2S_4/GaAs$ epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-exciton for n = 1 and $C_{24}$-exciton peaks for n = 24.

• Radiation Oncology Journal
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• v.9 no.1
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• pp.131-141
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• 1991

A comprehensive set of dosimetric measurements has been made on the Varian Clinac 1800 15 MV photon beam. Beam quality, percentage depth dose, dose in the build up region, output, symmetry and flatness, transmission through iead (Cerrobend), tray attenuation, isodose curves for the open and wedged fields were measured using 3 dimensional water phantom dosimetry system (including film densitometer system) and polystyrene phantoms. These dosimetric measurements sufficiently characterized the beam to permit clinical use. The depth dose characteristics of photon beam is $d_{max}$ of 3.0 cm and percentage depth dose of $76.8\%$ at 10 cm,100 cm source-surface distance, field size of $10\times10\;cm^2$ for 15 MV X-ray beam. The Output factors ranged 0.927 for $4\times4\;cm^2$ field to 1,087 for $35\times35\;cm^2$ field. The build-up level of maximum dose was at 3.0 cm and surface dose was approximately $15.5\%$ for a field size $10\times10\;cm^2$ The stability of output is $within\pm1\%$ and flatness and symmetry are $within\pm3\%$. The half value thickness (HVL) of lead is 13 mm, which corresponds to an attenuation coefficient of $0.053\;mm^{-1}$. These figures compare facorably with the manufacturesr`s specifications.

• Radiation Oncology Journal
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• v.19 no.3
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• pp.287-292
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• 2001

Prupose : We analyzed setup errors induced by using air-vacuum cushion as immobilization device in patients with rectal cancer. Materials and methods : We had treated the twenty patients with rectal cancer by 6 MV, 10 MV X-ray from Aug. 1998 to Aug. 1999 at Chungnam National University Hospital. All patients were treated at prone position. They were separated to two groups, control group, 10 patients using styrofoam, and test group, 10 patients using styrofoam and air-vacuum cushion. We measured errors of posterior field for x, y axis and lateral field for z, y axis with simulation film and EPID image using a matching technique. Results : In control group, the mean displacement values of pelvic bone landmark for x axis and y axis were 0.02 mm. 0.78 mm, respectively and the standard deviations of systematic error were 2.13 mm, 2.40 mm, respectively and the standard deviation of random error were 1.46 mm. 1.51 mm, respectively. In test group, the mean displacement values of x axis and y axis were -0.33 mm. 0.81 mm, respectively and the standard deviations of systematic error were 1.71 mm, 3.08 mm, respectively and the standard deviations of random errors were 1.40 mm. 1.88 mm, respectively. The mean displacement values of z axis and y axis were 2.98 mm. 0.74 mm, respectively and the standard deviations of systematic error were 4.75 mm, 2.65 mm, respectively and standard deviations of random error were 2.69 mm. 1.86 mm, respectively. The statistical difference of field size by using air vacuum cushion between two groups in posterior direction and lateral direction was not shown. Conclusion : We think that use of air-vacuum cushion may not be an advantage for improving setup accuracy in rectal cancer patients.

• Tuberculosis and Respiratory Diseases
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• v.44 no.2
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• pp.241-250
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• 1997

Objective : Although the prevalence of pulmonary tuberculosis has decreased progressively after the national control program for tuberculosis began, nowadays the number of MDRTB is increasing seriously. MDRTB tends to be poor responsive to current antituberculosis regimens. It is mainly due to poor compliance, high rate of side reaction of secondary drugs, and limitation in number of available drugs. The purpose of present study is to evaluate the clinical features of pulmonary tuberculosis patients admitted in one national tuberculosis hospital and to expose the problems pertaining to current remedies, to increase the treatment efficacy for pulmonary tuberculosis including MDRTB in the end. Method : Retrospective analysis of 336 pulmonary tuberculosis patients admitted in National Masan Tuberculosis Hospital was done. Contents of analysis were patients profile, the first diagnosed time and medical institutes, family history, residence, previous treatment history, chief complaints at the time of admission, lesion site on chest X -ray film, combined deseases, side reaction to antibuberculosis drugs, used drugs before admission and the results of drug sensitivity test. Results : The ratio between male and female was 4 : 1. Age showed relatively even distribution from 3rd to 6 th decades. 64.6% of the patients was diagnosed at public health center. Weight loss was the most common complaint at admission. Bilateral lesions on chest X-ray films were 59.8%. 130patients had combined desease, of which DM was the most common(37.7%). 95patients had family history, of which parents were the most common(41.7%). According to the time of first diagnosis, 31 patients were diagnosed before 1980, and after then the number of patients was increased by degrees. Residence overwhelmed in pusan and gyung-nam province. 258 patients got previous treatment history, of which 112 patients(43.4%) had more than 3 times and only 133 patients(51.6%)got regular medication. 97 patients used more than other 3 drugs in addition to INH, EMB, RFP and PZA before admission. 154 patients were informed with the results of drug sensitivity test. of which 77 patients had resistance to more than 5 drugs. Gastrointestinal problem was the most common in side reaction to drugs. Conclusion : In the case of weight loss of unknown cause, tuberculosis should be suspected. In first treatment, sufficient and satisfactory explanation for tuberculosis is necessary and treatment period should not be stict to 6 month-short term therapy. In retreatment, new drugs should not be added to used drugs even though drug sensitivity results show sensitivity to some of them. Proper time for surgical intervention should not be delayed.

• Journal of Sensor Science and Technology
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• v.11 no.5
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• pp.309-318
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• 2002

A stoichiometric mixture of evaporating materials for $CdIn_2S_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CdIn_2S_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CdIn_2S_4$ single crystal thin films measured with Hall effect by van der Pauw method are $9.01{\times}10^{16}\;cm^{-3}$ and $219\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CdIn_2S_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=2.7116\;eV-(7.74{\times}10^{-4}\;eV)T^2/(T+434)$. The crystal field and the spin-orbit splitting energies for the valence band of the $CdIn_2S_4$ have been estimated to be 0.1291 eV and 0.0248 eV, respectively, by means of the photocurrent spectra and the Hopfield quasi cubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}5$ states of the valence band of the $AgInS_2$/GaAs epilayer. The three photocurrent peaks observed at 10K areascribed to the $A_1$-, $B_1$-, and C1-exciton peaks for n = 1.

• Korean Journal of Digital Imaging in Medicine
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• v.9 no.1
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• pp.37-43
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• 2007

1. Purpose : This study is to present effective exposure conditions to acquire the best image of simple abdomen in Film Screen (F.S) system and Computed Radiography (C.R) system. 2. Method : In the F.S system, while an exposure condition was fixed as 70kVp, images of a patients simple abdomen were taken under the different mAs exposure conditions. Among these images, the best one was chosen by radiologists and radiological technologists. In the C.R system, the best image of the same patient was acquired with the same method from the F.S system. Both characteristic curves from F.S system and C.R system were analyzed. 3. Results : In the F.S system, the best exposure condition of simple abdomen was 70kVp and 20mAs. In the CR system, with the fixed condition at 70kVp, the image densities of human organs, such as liver, kidney, spleen, psoas muscle, lumbar spine body and iliac crest, were almost same despite different environments (3.2mAs, 8mAs, 12mAs, 16mAs and 20mAs). However, when the exposure conditions were over or under (below) 12mAs, the images between the abdominal wall and the directly exposed part became blurred because the gap of density was decreased. In the C.R system, while the volume of mAs was decreased, an artifact of quantum mottle was increased. 4. Conclusion : This study shows that the exposure condition in the C.R system can be reduced 40% than in the F.S system. This paper concluded that when the exposure conditions are set in CR environment, after the analysis of equipment character, such as image processing system(EDR : Exposure Data Recognition processing), PACS and so on, the high quality of image with maximum information can be acquired with a minimum exposure dose.

• Journal of the Korean Magnetics Society
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• v.17 no.2
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• pp.81-85
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• 2007

MnTe layers of high crystalline quality were successfully grown on Si(100) : B and Si(111) substrates by molecular beam epitaxy (MBE). Under tellurium-rich condition and the substrate temperature around $400^{\circ}C$, a layer thickness of $700{\AA}$ could be easily obtained with the growth rate of $1.1 {\AA}/s$. We investigated the structural, magnetic and transport properties of MnTe layers by using x-ray diffraction (XRD), superconducting quantum interference device (SQUID) magnetometry, and physical properties measurement system (PPMS). Characterization of MnTe layers on Si(100) : B and Si(111) substrates by XRD revealed a hexagonal structure of polycrystals with lattice parameters, ${\alpha}=4.143{\pm}0.001{\AA}\;and\;c=6.707{\pm}0.001{\AA}$. Investigation of magnetic and transport properties of MnTe films showed anomalies unlike antiferromagnetic powder MnTe. The temperature dependence of the magnetization data taken in zero-field-tooling (ZFC) and field-cooling (FC) conditions indicates three magnetic transitions at around 21, 49, and 210 K as well as the great irreversibility between ZFC and FC magnetization in the films. These anomalies are attributable to a magnetic-elastic coupling in the films. Magnetization measurements indicate ferromagnetic behaviour with hysteresis loops at 5 and 300 K for MnTe polycrystalline film. The coercivity ($H_c$) values at 5 and 300 K are 55 and 44 Oe, respectively. In electro-transport measurements, the temperature dependence of resistivity revealed a noticeable semiconducting behaviours and showed conduction via Mott variable range hopping at low temperatures.

• Journal of the Korean institute of surface engineering
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• v.41 no.5
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• pp.226-231
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• 2008

Titanium and its alloy have been widely used in dental implant and orthopedic prostheses. Electrochemical characteristics of dental implant in the various simulated body fluids have been researched by using electrochemical methods. Ti-6Al-4V alloy implant was used for corrosion test in 0.9% NaCl, artificial saliva and simulated body fluids. The surface morphology was observed using scanning electron microscopy (SEM) and energy dispersive x-ray spectroscopy (EDX). The electrochemical stability was investigated using potentiosat (EG&G Co, 263A). The corrosion surface was observed using scanning electron microscopy (SEM). From the results of potentiodynamic test in various solution, the current density of implant tested in SBF and AS solution was lower than that of implant tested in 0.9% NaCl solution. From the results of passive film stability test, the variation of current density at constant 250 mV showed the consistent with time in the case of implant tested in SBF and AS solution, whereas, the current density at constant 250mV in the case of implant tested in 0.9% NaCl solution showed higher compared to SBF and AS solution as time increased. From the results of cyclic potentiodynamic test, the pitting potential and |$E_{pit}\;-\;E_{corr}$| of implant tested in SBF and AS solution were higher than those of implant tested in 0.9% NaCl solution.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.3
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• pp.366-376
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• 1997

$CdGa_2Se_4$, epilayer of tetragonal type are grown on Si(100) substrate by hot wall epitaxy method. The source and substrate temperature is $580^{\circ}C$ and $420^{\circ}C$ respectively, and the thickness of the film is 3 $\mu \textrm{m}$. The crystallihe structure of epilayers were investigated by double crystal X-ray diffraction(DCXD). Hall effect on this sample was measured by the method of van der Pauw and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by pizoelectric scattering in the temperature range 30 K to 200 K and by polar optical scattering in the temperature range 200 K to 293 K. In order to explore of photocurrent to darkcurrent (pc/dc), maximum allowable power dissipation (MAPD), spectral response and response time. The results indicated that for the samples annealed in Se vapor the photoconductive characteristics are best. Then we obtained the sensitivity of 0.98, the value of pc/dc of $9.62{\times}10^6$, the MAPD of 321 ㎽ and the rise and decay time of 9 ㎳ and 9.5 ㎳, respectively.