• 한국세라믹학회지
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• 제31권2호
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• pp.147-154
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• 1994

The imperfections of LiTaO3 crystals grown from the Pt-Rh and the Ir crucible were investigated with X-ray diffraction, optical and electron microscope. The growth direction was <100>h and the plane parallel to the plane connecting two main growth ridges was (012)h which would be the main cleavage plane. The dislocation density in the specimen cut parallel to (012)h plane increased with polishing time and the inverted ferroelectric microdomains were induced based on this dislocations. Such imperfections as 180$^{\circ}$ domains, microcracks, dislocations and stacking faults. could be found in the LiTaO3 crytals. The crystal contaminated with lots of Rh form Pt-Rh crucible during the crystal growing under air atmosphere contained more imperfections. The main cleavage plane and subgrain boundary parallel to its growing axis might be the main source of reducing the mechnical strength during the wafering process.

• JSTS:Journal of Semiconductor Technology and Science
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• 제5권1호
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• pp.58-66
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• 2005

Inertial-grade vertical-type and lateral-type differential resonant accelerometers (DRXLs) are designed, fabricated using one process and tested for navigational applications. The accelerometers consist of an out-of-plane (for z-axis) accelerometer and in-plane (for x, y-axes) accelerometers. The sensing principle of the accelerometer is based on gap-sensitive electrostatic stiffness changing effect. It says that the natural frequency of the accelerometer can be changed according to an electrostatic force on the proof mass of the accelerometer. The out-of-plane resonant accelerometer shows bias stability of $2.5{\mu}g$, sensitivity of 70 Hz/g and bandwidth of 100 Hz at resonant frequency of 12 kHz. The in-plane resonant accelerometer shows bias stability of $5.2{\mu}g$, sensitivity of 128 Hz/g and bandwidth of 110 Hz at resonant frequency of 23.4 kHz. The measured performances of two accelerometers are suitable for an application of inertial navigation.

• 대한기계학회논문집
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• 제12권2호
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• pp.359-372
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• 1988

본 연구에서는 두 노즐간의 거리와 분사압력을 변화시켜 하류로 전개되는 이중분무의 분무형태를 살펴보았다.

• Journal of the Korean Wood Science and Technology
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• 제50권4호
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• pp.246-255
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• 2022

The need for non-destructive testing and evaluation of Korean traditional wooden buildings is increasing because of their widespread deterioration. Among all types of deterioration, termite damage in wooden columns is the most difficult to detect with the naked eye because it starts inside the wood, and the initial deterioration is small. X-ray computed tomography (CT) is the best technology to investigate the inner state of wood that has less damage, but applying it to wooden columns between walls is challenging. Therefore, the feasibility of tomosynthesis, which is a method to reconstruct a coronal section of a subject with a few X-ray projections from a limited angle of rotation, was studied as an alternative to CT. Pine (P. densiflora) with three artificial holes was prepared as a specimen to evaluate the quality of reconstructed tomosynthesis images according to the different number of projections. The quality of the tomosynthesis images in the in-focus plane was evaluated using the contrast-to-noise ratios, while a vertical resolution between the images was assessed by determining the artificial spread function. The quality of the tomosynthesis image in the in-focus plane increased as the number of projections increased and then remained constant as the number of projections reached 21 or over. In the case of vertical resolution, there was no significant difference when 21 projections or more were used to reconstruct the images. A distinct difference between coronal section images was found when the distance was more than 10 mm from one plane to another plane.

• Nuclear Engineering and Technology
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• 제22권2호
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• pp.108-115
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• 1990

0.5~l.2-MeV 양성자빔에 대한 X-선 발생단면적의 측정을 Cu와 Au에 대해 수행하였다. 이 실험에서는 SNU 1.5-MV 탄뎀 반데그라프 가속기에서 얻은 양성자빔을 표적에 입사시켰다. 여기서 방출된 X-선과 후방산란된 양성자는 Si(Li) X-선 검출기와 SSB(Silicone Surface Barrier) 하전입자 검출기를 이용해 동시 측정하였다. 그리하여 측정된 X-선 발생단면적은 다른 실험치들 및 PWBA(Plane Wave Born Approximation)와 ECPSSR(Perturbed Stationary State corrected Energy loss, Coulomb deflection, Relativistic effects)인 이론치들과 비교하였다. 1.0-MeV근처의 양성자에너지에 대해 측정치는 PWBA 값보다는 ECPSSR(D.D. Cohen et al., 1985) 값에 더 잘 일치함을 보였다. 특히, Au의 측정치는 1.2-MeV 양성자빔에 대해 9.69$\pm$0.39 bams이었고, ECPSSR 이론치와는 5% 이내로 일치했으며, 0.5~l.2-MeV 양성자에 대한 실험치는 대부분의 다른 실험치들과 30% 이내로 일치했다.

• 대한수학회보
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• 제36권4호
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• pp.629-636
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• 1999

We introduce Lipschitz algebras of differentiable functions of a perfect compact plane set X and extend the definition to Lipschitz algebras of infinitely differentiable functions of X. Then we define the subalgebras generated by polynomials, rational functions, and analytic functions in some neighbourhood of X, and determine the maximal ideal spaces of some of these algebras. We investigate the polynomial and rational approximation problems on certain compact sets X.

• Journal of the Korean Association of Oral and Maxillofacial Surgeons
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• 제36권5호
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• pp.375-379
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• 2010

Introduction: In the management of dentofacial deformities, variable movement of the maxilla can be made possible by a Le Fort I osteotomy. Posterior impaction of the maxilla necessary for rotation of the maxillomandibular complex enhances the functions and esthetic results. In cases of posterior impaction of the maxilla, an increase in the figure of the occlusal plane angle and incisor inclination can occur. This study reports the relationship between the amount of posterior impaction and the change in the occlusal plane angle and incisor inclination in a Le Fort I osteotomy by preoperative and postoperative lateral cephalograms. Materials and Methods: Twenty patients who had undergone orthognathic surgery in Dong-A University Medical Center participated in this study. Lateral cephalometrics, within 3 weeks prior to surgery and 3 days after surgery, were used for analysis. Pre and postoperative measurements of the occlusal plane angle and incisal inclination based on the Frankfort horizontal (FH) plane were performed. X and Y were defined as the amount of vertical change in the upper incisor tip and the amount of vertical change in the upper first molar mesial cup tip through the operation. The amount of final posterior maxillary impaction was determined by subtracting Y from X, which is the difference in vertical height. According to the amount of posterior maxillary impaction, the change in the occlusal plane angle and incisal inclination was measured. Results: The average posterior maxillary impaction was 2.91 mm and the average change in the occlusal plane angle and incisal inclination was $6.54^{\circ}$after surgery. As a result, each mm of posterior maxillary impaction changed the occlusal plane angle and incisal inclination by $2.25^{\circ}$. Statistically, there was high significance. Two cases were observed: one with the same amount of posterior maxillary impaction performed on both the right and left showing $2.20^{\circ}$, and the other with a different amount of posterior maxillary impaction performed showing $2.35^{\circ}$. In this case, there was no significance difference between the two cases. Conclusion: Each mm of posterior maxillary impaction changes the occlusal plane angle and incisal inclination by an average of $2.25^{\circ}$. In posterior maxillary impaction, there was no significant difference in the amount of change in the occlusal plane angle and incisal inclination regardless of whether there was an equal amount of posterior maxillary impaction on both sides. This study is expected to help in the presurgical orthodontic preparation and presurgical treatment planning.

• 정보처리학회논문지:소프트웨어 및 데이터공학
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• 제4권10호
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• pp.465-472
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• 2015

본 논문에서는 시차공간상의 평면검출 방법을 제안하고 그 성능을 평가한다. 다양한 표면을 평면으로 근사하고 검출함으로써 시차공간에 나타난 장면을 간소화하고 수식화하여 다루기 쉽도록 한다. 또한 시차공간에서 근사적으로 구한 평면은 3차원 공간상에서 실측 크기로 표현 가능하고 장애물 검출 및 카메라 위치 추정에 활용할 수 있다. 먼저 스테레오 매칭 기술을 이용해 두 개의 영상으로부터 2차원 공간상에 좌표쌍마다 시차값을 가지는 시차공간을 생성한다. x 또는 y축의 전체적인 추이를 반영하도록 돕는 선 단순화 기법을 이용하여 시차값의 접선 기울기를 추정한다. 기울기 쌍의 조합에 따라 10개의 라벨을 시차공간의 좌표쌍에 부여한다. 상하좌우 방향으로 인접하고 동일한 라벨을 가지는 좌표쌍을 연결하여 군집을 생성하고 최소자승법을 이용해 각 군집에 대한 평면식을 추정한다. 시차공간 내에서 평면식을 만족하는 점들이 가장 많은 평면을 검출하고 이를 시차공간을 가장 잘 간소화한 N개의 평면으로 선택한다. 평면검출의 성능을 정량적으로 평가하였고 그 결과는 3차원 원뿔과 원통에서 각각 97.9%, 86.6% 품질을 보였다. 스테레오 비전 알고리즘의 성능을 평가하기 위해 대표적으로 이용되는 Middlebury와 KITTI 실험데이터로부터 제안된 평면검출 방법은 훌륭하게 평면을 검출하였다.

• 한국재료학회지
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• 제21권10호
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• pp.563-567
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• 2011

We report the structural characterization of $Bi_xZn_{1-x}O$ thin films grown on c-plane sapphire substrates by plasma-assisted molecular beam epitaxy. By increasing the Bi flux during the growth process, $Bi_xZn_{1-x}O$ thin films with various Bi contents (x = 0~13.17 atomic %) were prepared. X-ray diffraction (XRD) measurements revealed the formation of Bi-oxide phase in (Bi)ZnO after increasing the Bi content. However, it was impossible to determine whether the formed Bi-oxide phase was the monoclinic structure ${\alpha}-Bi_2O_3$ or the tetragonal structure ${\beta}-Bi_2O_3$ by means of XRD ${\theta}-2{\theta}$ measurements, as the observed diffraction peaks of the $2{\theta}$ value at ~28 were very close to reflection of the (012) plane for the monoclinic structure ${\alpha}-Bi_2O_3$ at 28.064 and the reflection of the (201) plane for the tetragonal structure ${\beta}-Bi_2O_3$ at 27.946. By means of transmission electron microscopy (TEM) using a diffraction pattern analysis and a high-resolution lattice image, it was finally determined as the monoclinic structure ${\alpha}-Bi_2O_3$ phase. To investigate the distribution of the Bi and Bi-oxide phases in BiZnO films, elemental mapping using energy dispersive spectroscopy equipped with TEM was performed. Considering both the XRD and the elemental mapping results, it was concluded that hexagonal-structure wurtzite $Bi_xZn_{1-x}O$ thin films were grown at a low Bi content (x = ~2.37 atomic %) without the formation of ${\alpha}-Bi_2O_3$. However, the increased Bi content (x = 4.63~13.17 atomic %) resulted in the formation of the ${\alpha}-Bi_2O_3$ phase in the wurtzite (Bi)ZnO matrix.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.170-170
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• 2010

a-plane 혹은 m-plane면을 사용하는 무분극 GaN LED는 c축 방향으로 발생하는 분극의 영향을 받지 않기 때문에 분극 GaN LED에 비해 높은 내부 양자효율을 가진다. 또한 무분극 GaN는 상대적으로 고농도의 p-type 도핑이 가능하기 때문에 광효율을 높일 수 있다. 하지만 이와 같은 장점에도 불구하고 무분극 GaN는 성장모드의 비대칭으로 인해 높은 결정성과 mirror-like한 표면을 얻기가 힘들다. 본 논문에서는 Metalorganic chemical-vapor deposition (MOCVD) 장비를 사용하여 r-plane 사파이어 기판위에 a-plane GaN을 성장시켰다. 일반적으로 사용하는 저온에서의 nucleation layer 성장 대신 $1050^{\circ}$의 고온에서 성장 시킨후 일반적으로 사용하는 two-step 성장방법으로 그위에 5.5um정도의 GaN을 성장시켰다. 성장시 Trimethylgallium(TMGa)와 암모니아를 각각 Ga과 N 소스로 이용하였고 캐리어 가스는 수소를 사용하였다. 비대칭 결정성을 줄이기 위해 3D island growth mode에서의 성장조건을 바꾸어 c축과 m축 방향으로의 X-ray 결정성(FWHM) 차이가 564 arcsec에서 206 arcsec로 변화 시켰다. Normarski 현미경으로 표면을 관찰한 결과 v-defect이 없고 a-plane GaN에서 볼 수 있는 전형적인 줄무늬 패턴을 가지는 표면을 얻었으며 광학적 특성을 보기 위해 Photoluminescence (PL)을 측정하였다.