• 제목/요약/키워드: X band

검색결과 1,825건 처리시간 0.023초

AlGaAs합금의 Al 도핑농도에 대한 효과 (Effect on Al Concentration of AlGaAs Ternary Alloy)

  • 강병섭
    • 반도체디스플레이기술학회지
    • /
    • 제20권4호
    • /
    • pp.125-129
    • /
    • 2021
  • We investigated the electronic property and atomic structure for chalcopyrite (CH) AlxGa1-xAs semiconductor by using first-principles FPLMTO method. The CH-AlxGa1-xAs exhibits a p-type semiconductor with a direct band-gap. For low Al concentration unoccupied hole-carriers are induced, but for high Al concentration it is formed a localized bonding or anti-bonding state below Fermi level. The hybridization of Al(3s)-Ga(4s, or 4p) is larger than that of Al(3s)-As(4s, or 4p). And the Al film on As-terminated surface, Al/AsGa(001), is more energetically favorable one than that on Ga-terminated (001) surface. Consequently, the band-gap of CH-AlxGa1-xAs system increases exponentially with increasing Al concentration. The change of lattice parameter is shown two different configurations with increasing Al concentration. The calculated lattice parameters for CH-AlxGa1-xAs system are compared to the experimental ones of zinc-blend GaAs and AlAs.

Dualband Shared-Aperture Microstrip Antenna for Reflectarray Feeding Structure of LEO Satellite System

  • Bagas Satriyotomo;Ji-Woong Hyun;Seongmin Pyo
    • 전기전자학회논문지
    • /
    • 제28권1호
    • /
    • pp.20-25
    • /
    • 2024
  • This paper presents a new dualband shared-aperture microstrip antenna to operate in the S-Band of 2 GHz and X-Band of 8 GHz, for a Low Earth Orbit satellite antenna system. The proposed antenna incorporates two types of patches those are a rectangular loop-shaped for the S-Band and a square patch for the X-Band. Each patch are optimized for its respective operating band with minimal interference. The proposed antenna achieves a bandwidth of 16 MHz in the S-Band and 572 MHz in the X-Band. The highest gain is measured 7.14 dBi at 1.99 GHz and 7.95 dBi at 7.88 GHz. The proposed antenna exhibits half power beamwidths of 85 degree and 80 degree at 1.99 GHz and 7.88 GHz, respectively. The proposed dualband shared-aperture microstrip antenna may be a good candidate for as a feeding system of a dualband reflectarray antenna With its unidirectional radiation pattern from excellent agreement between simulation and measurement results.

인공신경망을 이용한 X-Band 레이다 유의파고 추정 (Estimation of Significant Wave Heights from X-Band Radar Using Artificial Neural Network)

  • 박재성;안경모;오찬영;장연식
    • 한국해안·해양공학회논문집
    • /
    • 제32권6호
    • /
    • pp.561-568
    • /
    • 2020
  • 항해용 X-band 레이다를 이용한 파랑관측은 기존의 파랑관측 방법인 부이식 파고계, 압력식 파고계, 초음파식 파고계에 비해 많은 이점이 있다. 예를 들면 유실과 파손의 위험이 없고, 유지관리 비용이 적게 들며, 심해부터 천해까지 파랑의 공간적 분포를 알 수 있다. 본 논문에서는 레이다형 파고계의 유의파고 측정 정확도를 높이는 인공신경망을 이용한 알고리즘을 제시하였다. 레이다형 파고계에서 유의파고를 추정하는 전통적인 방법은 신호 대 잡음 비율(${\sqrt{SNR}}$) 또는 신호 대 잡음 비율과 첨두주기(TP)를 이용하는 방법이 있다. 본 연구에서는 신호 대 잡음 비율, 첨두주기 및 레이다 이미지 해상도 비율(Rval > k)을 입력변수로 하는 인공신경망 알고리즘을 이용하여 유의파고 추정의 정확도를 향상시켰다. 개발된 알고리즘을 울진 후정해수욕장에서 초음파식 파고계로 측정한 유의파고의 시계열과 비교하여 정확도 향상을 확인하였다.

A 20 W GaN-based Power Amplifier MMIC for X-band Radar Applications

  • Lee, Bok-Hyung;Park, Byung-Jun;Choi, Sun-Youl;Lim, Byeong-Ok;Go, Joo-Seoc;Kim, Sung-Chan
    • 전기전자학회논문지
    • /
    • 제23권1호
    • /
    • pp.181-187
    • /
    • 2019
  • In this paper, we demonstrated a power amplifier monolithic microwave integrated circuit (MMIC) for X-band radar applications. It utilizes commercial $0.25{\mu}m$ GaN-based high electron mobility transistor (HEMT) technology and delivers more than 20 W of output power. The developed GaN-based power amplifier MMIC has small signal gain of over 22 dB and saturated output power of over 43.3 dBm (21.38 W) in a pulse operation mode with pulse width of $200{\mu}s$ and duty cycle of 4% over the entire band of 9 to 10 GHz. The chip dimensions are $3.5mm{\times}2.3mm$, generating the output power density of $2.71W/mm^2$. Its power added efficiency (PAE) is 42.6-50.7% in the frequency bandwidth from 9 to 10 GHz. The developed GaN-based power amplifier MMIC is expected to be applied in a variety of X-band radar applications.

바랙터 다이오드를 이용한 X-밴드 전압제어 발진기 (X-band Voltage Controlled Oscillator using Varactor Diode)

  • 박동국;윤나라;최연지;김예지
    • Journal of Advanced Marine Engineering and Technology
    • /
    • 제33권5호
    • /
    • pp.756-761
    • /
    • 2009
  • In this paper, a X band voltage controlled oscillator is proposed. The oscillator uses a transistor as an oscillating element and its oscillating frequencies are controlled by the tuning voltage of varactor diode. Using the circuit simulation tools, the matching circuits between the transistor and varactor diode, its input and output matching circuits, and a feedback circuits are designed. The measured results of the fabricated oscillator show that its oscillation frequencies are from 10.50GHz to 10.88GHz according to the turning voltages of 1V to 18V, its output power levels are about 4.3dBm, and its phase noise is around -43.5dBc/Hz at 100kHz offset frequency of 10.5GHz.

저 회전강성 진동 절연기에 의한 X-밴드 안테나의 고각방향 미소진동 절연 효과 검증 (Verification of Micro-vibration Isolation Performance by using Low Rotational Stiffness Isolator under Elevation Direction Operation of the X-band Antenna)

  • 전수현;이재경;정새한솔;이명재;오현웅
    • 한국소음진동공학회논문집
    • /
    • 제25권4호
    • /
    • pp.238-246
    • /
    • 2015
  • A stepping motor is widely used to operate the elevation and azimuth stage of the X-band antenna with 2-axis gimbal system for effective image data transmission from a satellite to a ground station. However, such stepping motor also generates an undesirable micro-vibration which is one of the main disturbance sources affecting image quality of the high-resolution observation satellite. In order to improve the image quality, the micro-vibration isolation of the X-band antenna system is essential. In this study, the low rotational stiffness isolator has been proposed to reduce the micro-vibration disturbance induced by elevation direction operation of the X-band antenna. In addition, its structural safety was confirmed by the structure analysis based on the derived torque budget. The effectiveness of the design was also verified through the micro-vibration measurement test.

X-Band Radar용 도료형 전파흡수체의 실장실험 (Far Feild test on Electromagnetic Wave Absorber in Paint Type for X-babd Radar)

  • 안영섭;김동일;정세모
    • 한국전자파학회지:전자파기술
    • /
    • 제4권3호
    • /
    • pp.3-10
    • /
    • 1993
  • 전파흡수체의 전파흡수능 측정방법은 기본적으로 다양한 마이크로파 측정법이 이용될 수 있지만, 레이다용 전파흡수체의 경우, 전파의 주파수가 높기 때문에 파장이 짧아서 측정오차가 큰 문제점이 있다. 따라서, 지금까지는 $20mm\Phi$동축관 및 구형도파관을 이용한 재료정수측정법과 전파흡수능측정기법에 관하여 검토하여 왔다. 본 논문에서는 그동안 실험실적으로 설계하여 온 X-Barn Radar용 전파홉수체를 실용의 상태에 가까운 반사 전력법에 의하여 그 성능을 예비평가하고, 실제의 target를 제작하여 X-Band Radar로 실장실험한 결과에 관하여 보고한다.

  • PDF

V2X 차량 통신용 5.9 GHz 버틀러 매트릭스의 광대역화 설계 (Band-Broadening Design of the Butler Matrix for V2X - 5.9 GHz Communication)

  • 한다정;이창형;박희준;강승택
    • 한국위성정보통신학회논문지
    • /
    • 제11권4호
    • /
    • pp.107-113
    • /
    • 2016
  • 본 논문에서는 5.9 GHz에서 동작하는 광대역의 Butler Matrix에 기반한 차량 간 통신(V2X)용 안테나의 설계법이 제시된다. V2X가, 교통 시스템의 지능화, 모바일 통신 기능의 다각화, 주파수 자원의 포화문제 해소, 신호 송수신의 효율성을 극대화를 위한 빔 형성 및 빔 조향 안테나를 필요로 함에 따라, 부피가 크지 않으면서 요구사항을 충족할 수 있는 Butler Matrix 급전부와 그에 연결된 방사체를 구현한다. 기본적인 Butler Matrix를 구성하는 협대역 부품들과 방사체가 먼저 설계된 다음, 안테나 시스템의 차량 장착시에 발생될 주파수 천이에 대해 영향을 크게 받지 않기 위한 광대역용 Butler matrix의 구성품들이 설계된다. 협대역과 광대역 구조들의 성능들이 서로 비교되어, 빔 형성 및 빔 조향의 공통된 성능을 보이는 동시에, 주파수 영역에서 대역폭 관점에서의 차별성이 도시된다.

펄스 레이저 증착법을 이용한 $Zn_{1-x}Mg_xO$ 박막의 제작과 특성연구 (Preparation and Properties of $Zn_{1-x}Mg_xO$ Thin Films Prepared by Pulsed Laser Deposition Method)

  • 서광종
    • 마이크로전자및패키징학회지
    • /
    • 제12권1호
    • /
    • pp.73-76
    • /
    • 2005
  • To widen the band gap of ZnO, we have investigated $Zn_{1-x}Mg_xO(ZMO)$ thin films prepared by pulsed laser deposition on c-plane sapphire substrates at $500^{\circ}C$. From X-ray diffraction patterns, ZMO films show only the (0002) and (0004) diffraction peaks. It means that the flints have the wurtzite structure. Segregation of ZnO and MgO phases is found in the films with x=0.59. All the samples are highly transparent in the visible region and have a sharp absorption edge in the UV region. The shift of absorption edge to higher energy is observed in the films with higher Mg composition. The excitonic nature of the films is clearly appeared in the spectra for all alloy compositions. The optical band-gap ($E_g$) of ZMO films is obtained from the ${\alpha}^2$ vs Photon energy plot assuming ${\alpha}^2\;\propto$ (hv - $E_g$), where u is the absorption coefficient and hv is the photon energy. The value of $E_g$ increases up to 3.72 eV for the films with x=0.35. It is important to adjust Mg composition control for controlling the band-gap of ZMO films.

  • PDF

Preparation, Characterization and Photoluminescence Properties of Ca1-xSrxS:Eu Red-emitting Phosphors for a White LED

  • Sung, Hye-Jin;Cho, Young-Sik;Huh, Young-Duk;Do, Young-Rag
    • Bulletin of the Korean Chemical Society
    • /
    • 제28권8호
    • /
    • pp.1280-1284
    • /
    • 2007
  • A series of Ca1-xSrxS:Eu (x = 0.0, 0.2, 0.4, 0.6, 0.8, 1.0) phosphors were synthesized by solid-state reactions. The Ca1-xSrxS:Eu phosphors have a strong absorption at 455 nm, which corresponds to the emission wavelength of a blue LED. The emission peak of Ca1-xSrxS:Eu is blue shifted from 655 to 618 nm with increasing Sr content. The characteristics of Ca1-xSrxS:Eu phosphors make them suitable for use as wavelengthtunable red-emitting phosphors for three-band white LEDs pumped by a blue LED. In support of this, we fabricated a three-band white LED by coating SrGa2S4:Eu and Ca0.6Sr0.4S:Eu phosphors onto a blue LED chip, and characterized its optical properties.