• Title/Summary/Keyword: Wurtzite

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Structural and Optical Properties of CdS Thin Films Deposited by R.F. Magnetron Sputtering

  • Hwang, Dong-Hyeon;An, Jeong-Hun;Son, Yeong-Guk
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.149-149
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    • 2011
  • CdS films were deposited on glass substrates by R.F. magnetron sputtering method and the films were annealed at various substrate temperatures ranging from room temperature to $300^{\circ}C$. Structural properties of the films were studied by X-ray diffraction analysis. The structural parameters as crystallite size have been evaluated. The crystallite sizes were found to increase, and the X-ray diffraction patterns were seen to sharpen by increasing substrate temperatures. X-ray diffraction patterns of these films indicated that they contain both cubic (zincblende) and hexagonal (wurtzite) structures as a mixture. Optical properties of the films were measured at room temperature by using UV/VIS spectrometer in the wavelength range of 190 to 1100nm and optical absorption coefficients were calculated using these data. The energy gap of the films was found to decrease, and the band edge sharpness of the optical absorption was seen to oscillate by annealing. The results show that heat treatments under optimal annealing condition can provide significant improvements in the properties of CdS thin films.

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Effect of Al content and heat treatment on the temperature coefficient of resistance of Cr1-xAlxN film deposited by magnetron-sputtering (마그네트론 스퍼터링에 의해 제조된 Cr1-xAlxN 박막의 Al 함량과 열처리에 따른 온도저항계수)

  • Mun, Seon-Cheol;Kim, Sang-Ho
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2012.11a
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    • pp.187-188
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    • 2012
  • magnetron-sputtering법을 사용하여 $Cr_{1-x}Al_xN$ 박막을 증착함에 있어 Al 함량의 변화를 주었다. 그 후 열처리를 통하여 thermal inkjet 방식 print head의 heater resistor 소재로서의 특성 향상을 도모하였다. Al의 함량이 증가할수록 결정구조는 NaCl에서 wurtzite HCP 구조로 변화하였으며 전기적 특성 또한 다르게 나타났다. 비열처리 시 Al 함량이 클수록 결정성은 떨어진다는 것을 확인하였고, 열처리 시 Al 함량이 적을 수 록 더 안정한 온도 저항 계수를 나타내는 것을 확인하였다.

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Effect on N Defect in Cu-doped III-nitride Semiconductors

  • Kang, Byung-Sub;Lee, Jae-Kwang;Lim, Yong-Sik;Song, Kie-Moon;Chae, Kwang-Pyo
    • Journal of Magnetics
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    • v.16 no.4
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    • pp.332-336
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    • 2011
  • We studied the effect on the electronic and magnetic properties of the N defect in clean and Cu-doped wurtzite III-nitrides by using the first-principles calculations. When it is doped two Cu atoms in the nearest neighboring sites, the system of AlN, GaN, or InN with the N vacancy is energetically more favorable than that without the N vacancy site. When the Cu concentration increases, the total magnetic moment of a supercell becomes small. The ferromagnetism of Cu atom is very low due to the weak 3d-3d coupling. It is noticeable that the spin-exchange interaction between the Cu-3d and N defect states is important.

External Feedback Effects on the Relative Intensity Noise Characteristics of InAIGaN Blue Laser Diodes

  • Cho Hyung-Uk;Yi Jong-Chang
    • Journal of the Optical Society of Korea
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    • v.10 no.2
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    • pp.86-90
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    • 2006
  • The external feedback effect on the relative intensity noise (RIN) characteristics of blue InAlGaN laser diode has been analyzed taking into account the spontaneous emission noise and the injection current for the high frequency modulation. A Langevin diffusion model was exploited to characterize its relative intensity noise. The simulation parameters were quantitatively evaluated from the optical gain properties of the InAlGaN multiple quantum well active regions by using the multiband Hamiltonian for the strained wurtzite crystals. The extracted parameters were then applied to the rate equations taking into account the external feedback and the high frequency modulation current. The RIN characteristics were investigated to optimize the low frequency laser diode noise characteristics.

A PSPICE Circuit Modeling of Strained AlGaInN Laser Diode Based on the Multilevel Rate Equations

  • Lim, Dong-Wook;Cho, Hyung-Uk;Sung, Hyuk-Kee;Yi, Jong-Chang;Jhon, Young-Min
    • Journal of the Optical Society of Korea
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    • v.13 no.3
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    • pp.386-391
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    • 2009
  • PSPICE circuit parameters of the blue laser diodes grown on wurtzite AlGaInN multiple quantum well structures were extracted directly from the three level rate equations. The relevant optical gain parameters were separately calculated from the self-consistent multiband Hamiltonian. The resulting equivalent circuit model for a blue laser diode was schematically presented, and its modulation characteristics, including the pulse response and the frequency response, have been demonstrated by using a conventional PSPICE.

The Optical Characteristics of CdS Thin Films and Powders (CdS 분말 및 박막의 광학적 특성)

  • Chang, Ki-Seog
    • Korean Journal of Crystallography
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    • v.19 no.1
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    • pp.25-30
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    • 2008
  • In order to characterize the optical properties of CdS thin films and CdS powders, the following experiments were performed: CdS wurtzite thin films were made using 99.99% CdS (Aldrich) powder and the $AlO_x$ membranes in $7{\times}10^{-6}$ torr(here, the average vacuum coating speed is $1{\AA}/sec$.). The surface states of CdS nano-particles with dimensions of 3.87 nm were studied through the fluorescence spectroscopy. From the resulting spectra exhibited, we can see a sharp fluorescence at 451 nm arising from the excitons on the CdS thin films, compared with the 448nm peak of the CdS powders.

High-temperature Oxidation of Nano-multilayered AlTiSiN Thin Films deposited on WC-based carbides

  • Hwang, Yeon Sang;Lee, Dong Bok
    • Corrosion Science and Technology
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    • v.12 no.3
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    • pp.119-124
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    • 2013
  • Nano-multilayered, crystalline AlTiSiN thin films were deposited on WC-TiC-Co substrates by the cathodic arc plasma deposition. The deposited film consisted of wurtzite-type AlN, NaCl-type TiN, and tetragonal $Ti_2N$ phases. Their oxidation characteristics were studied at 800 and $900^{\circ}C$ for up to 20 h in air. The WC-TiC-Co oxidized fast with large weight gains. By contrast, the AlTiSiN film displayed superior oxidation resistance, due mainly to formation of the ${\alpha}-Al_2O_3$-rich surface oxide layer, below which an ($Al_2O_3$, $TiO_2$, $SiO_2$)-intermixed scale existed. Their oxidation progressed primarily by the outward diffusion of nitrogen, combined with the inward transport of oxygen that gradually reacted with Al, Ti, and Si in the film.

Technical issue for growth of ZnO nano-structure by PLD

  • Kim, Se-Yun;Jo, Gwang-Min;Yu, Jae-Rok;Lee, Jun-Hyeong;Kim, Jeong-Ju;Heo, Yeong-U
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2013.05a
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    • pp.207-207
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    • 2013
  • 증착온도 $700^{\circ}C$, 산소분압30mTorr에서 c-plane 사파이어 기판위에 PLD를 이용하여 ZnO nano-rod를 합성하였다. 거리가 멀어질수록 rod의 직경과 증착율이 감소하는 것을 확인 하였다. 이는 ablated particle이 가진 kinetic energy가 감소되고, cluster ion의 형성으로 인해 고온에서 rod가 형성될 수 있는 것으로 이해된다. 고진공에서는 kinetic energy가 감소되기 어렵기 때문에 nano-rod shape 형성은 불가능 할 것이며, ZnO와 같은 wurtzite 구조를 가진 물질의 타겟을 사용하여 cluster 형성 분위기에서 증착한다면 비슷한 경향을 나타낼 것으로 예상된다.

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Semiconducting ZnO Nanofibers as Gas Sensors and Gas Response Improvement by $SnO_2$ Coating

  • Moon, Jae-Hyun;Park, Jin-Ah;Lee, Su-Jae;Zyung, Tae-Hyoung
    • ETRI Journal
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    • v.31 no.6
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    • pp.636-641
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    • 2009
  • ZnO nanofibers were electro-spun from a solution containing poly 4-vinyl phenol and Zn acetate dihydrate. The calcination process of the ZnO/PVP composite nanofibers brought forth a random network of polycrystalline wurtzite ZnO nanofibers of 30 nm to 70 nm in diameter. The electrical properties of the ZnO nanofibers were governed by the grain boundaries. To investigate possible applications of the ZnO nanofibers, their CO and $NO_2$ gas sensing responses are demonstrated. In particular, the $SnO_2$-deposited ZnO nanofibers exhibit a remarkable gas sensing response to $NO_2$ gas as low as 400 ppb. Oxide nanofibers emerge as a new proposition for oxide-based gas sensors.

Influence of SiO2 Capping and Annealing on the Luminescence Properties of Larva-Like GaS Nanostructures

  • Kim, Hyunsu;Jin, Changhyun;Park, Sunghoon;Lee, Chongmu
    • Bulletin of the Korean Chemical Society
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    • v.33 no.11
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    • pp.3576-3580
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    • 2012
  • Larva-like GaS nanostructures synthesized by the thermal evaporation of Ga metals and S powders were coated with $SiO_2$ by the sputtering technique. Transmission electron microscopy and X-ray diffraction analyses revealed that the cores and shells of the GaS-core/$SiO_2$-shell larva-like nanostructures were single crystal wurtzite-type hexagonal structured-GaS and amorphous $SiO_2$, respectively. Photoluminescence (PL) measurements at room temperature showed that the passivation of the larva-like GaS nanostructures was successfully achieved with $SiO_2$ without nearly harming the major emission from the wires. However, subsequent thermal annealing treatment was found to be undesirable owing to the degradation of their emission in intensity.